DE3687540D1 - Verfahren zum niederschlagen einer schicht aus zinkoxid. - Google Patents

Verfahren zum niederschlagen einer schicht aus zinkoxid.

Info

Publication number
DE3687540D1
DE3687540D1 DE8686304269T DE3687540T DE3687540D1 DE 3687540 D1 DE3687540 D1 DE 3687540D1 DE 8686304269 T DE8686304269 T DE 8686304269T DE 3687540 T DE3687540 T DE 3687540T DE 3687540 D1 DE3687540 D1 DE 3687540D1
Authority
DE
Germany
Prior art keywords
zincoxide
depositing
layer
zincoxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304269T
Other languages
English (en)
Other versions
DE3687540T2 (de
Inventor
S Vijayakumar
Kimberly A Blaker
Robert D Wieting
Boon Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shell Solar Industries LP
Original Assignee
Siemens Solar Industries LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Solar Industries LP filed Critical Siemens Solar Industries LP
Publication of DE3687540D1 publication Critical patent/DE3687540D1/de
Application granted granted Critical
Publication of DE3687540T2 publication Critical patent/DE3687540T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
DE19863687540 1985-06-04 1986-06-04 Verfahren zum niederschlagen einer schicht aus zinkoxid. Expired - Lifetime DE3687540T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74108185A 1985-06-04 1985-06-04

Publications (2)

Publication Number Publication Date
DE3687540D1 true DE3687540D1 (de) 1993-03-04
DE3687540T2 DE3687540T2 (de) 1993-08-05

Family

ID=24979305

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863687540 Expired - Lifetime DE3687540T2 (de) 1985-06-04 1986-06-04 Verfahren zum niederschlagen einer schicht aus zinkoxid.

Country Status (4)

Country Link
US (1) US4751149A (de)
EP (1) EP0204563B1 (de)
JP (1) JPH0682625B2 (de)
DE (1) DE3687540T2 (de)

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EP1840966A1 (de) 2006-03-30 2007-10-03 Universite De Neuchatel Transparente, leitende und strukturierte Schicht sowie Verfahren zu ihrer Herstellung
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KR20140046617A (ko) * 2012-10-09 2014-04-21 삼성코닝정밀소재 주식회사 산화아연 전구체 및 이를 이용한 산화아연계 박막 증착방법
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Also Published As

Publication number Publication date
EP0204563B1 (de) 1993-01-20
JPS627123A (ja) 1987-01-14
US4751149A (en) 1988-06-14
DE3687540T2 (de) 1993-08-05
EP0204563A3 (en) 1988-09-07
JPH0682625B2 (ja) 1994-10-19
EP0204563A2 (de) 1986-12-10

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