DE3674067D1 - Nichtfluechtige programmierbare statische speicherzelle und ein nichtfluechtiger programmierbarer statischer speicher. - Google Patents

Nichtfluechtige programmierbare statische speicherzelle und ein nichtfluechtiger programmierbarer statischer speicher.

Info

Publication number
DE3674067D1
DE3674067D1 DE8686200976T DE3674067T DE3674067D1 DE 3674067 D1 DE3674067 D1 DE 3674067D1 DE 8686200976 T DE8686200976 T DE 8686200976T DE 3674067 T DE3674067 T DE 3674067T DE 3674067 D1 DE3674067 D1 DE 3674067D1
Authority
DE
Germany
Prior art keywords
static memory
volatile programmable
programmable static
memory cell
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686200976T
Other languages
English (en)
Inventor
Roger C O Int Octrooib Cuppens
Cornelis D C O Int O Hartgring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3674067D1 publication Critical patent/DE3674067D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE8686200976T 1985-06-06 1986-06-05 Nichtfluechtige programmierbare statische speicherzelle und ein nichtfluechtiger programmierbarer statischer speicher. Expired - Lifetime DE3674067D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8501631A NL8501631A (nl) 1985-06-06 1985-06-06 Niet vluchtige, programmeerbare, statische geheugencel en een niet vluchtig, programmeerbaar statisch geheugen.

Publications (1)

Publication Number Publication Date
DE3674067D1 true DE3674067D1 (de) 1990-10-18

Family

ID=19846096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686200976T Expired - Lifetime DE3674067D1 (de) 1985-06-06 1986-06-05 Nichtfluechtige programmierbare statische speicherzelle und ein nichtfluechtiger programmierbarer statischer speicher.

Country Status (8)

Country Link
US (1) US4707807A (de)
EP (1) EP0204385B1 (de)
JP (1) JPS61284896A (de)
KR (1) KR950004620B1 (de)
CA (1) CA1255792A (de)
DE (1) DE3674067D1 (de)
IE (1) IE57597B1 (de)
NL (1) NL8501631A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6478489A (en) * 1987-06-08 1989-03-23 Fujitsu Ltd Nonvolatile memory device
US4802124A (en) * 1987-08-03 1989-01-31 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with reduced tunnel device count for improved reliability
GB8807225D0 (en) * 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
US5353248A (en) * 1992-04-14 1994-10-04 Altera Corporation EEPROM-backed FIFO memory
US5452246A (en) * 1993-06-02 1995-09-19 Fujitsu Limited Static semiconductor memory device adapted for stabilization of low-voltage operation and reduction in cell size
DE10211337B4 (de) * 2002-03-14 2009-12-31 Infineon Technologies Ag Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung
JP2005064427A (ja) * 2003-08-20 2005-03-10 Elpida Memory Inc 不揮発性ランダムアクセスメモリおよびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
GB2063601B (en) * 1979-11-12 1984-02-29 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
US4400799A (en) * 1981-09-08 1983-08-23 Intel Corporation Non-volatile memory cell
US4420821A (en) * 1982-02-19 1983-12-13 International Business Machines Corporation Static RAM with non-volatile back-up storage and method of operation thereof

Also Published As

Publication number Publication date
IE57597B1 (en) 1993-01-13
JPH0584598B2 (de) 1993-12-02
KR950004620B1 (ko) 1995-05-03
EP0204385B1 (de) 1990-09-12
CA1255792A (en) 1989-06-13
US4707807A (en) 1987-11-17
EP0204385A1 (de) 1986-12-10
KR870000706A (ko) 1987-02-20
IE861459L (en) 1986-12-06
JPS61284896A (ja) 1986-12-15
NL8501631A (nl) 1987-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee