DE4442067B8 - Programmierbare Permanentspeicherzelle - Google Patents
Programmierbare Permanentspeicherzelle Download PDFInfo
- Publication number
- DE4442067B8 DE4442067B8 DE4442067A DE4442067A DE4442067B8 DE 4442067 B8 DE4442067 B8 DE 4442067B8 DE 4442067 A DE4442067 A DE 4442067A DE 4442067 A DE4442067 A DE 4442067A DE 4442067 B8 DE4442067 B8 DE 4442067B8
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- permanent memory
- programmable permanent
- programmable
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29547593A JP3344598B2 (ja) | 1993-11-25 | 1993-11-25 | 半導体不揮発メモリ装置 |
JPP5-295475 | 1993-11-25 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE4442067A1 DE4442067A1 (de) | 1995-06-01 |
DE4442067B4 DE4442067B4 (de) | 2008-01-10 |
DE4442067B8 true DE4442067B8 (de) | 2008-04-17 |
Family
ID=17821086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4442067A Expired - Fee Related DE4442067B8 (de) | 1993-11-25 | 1994-11-25 | Programmierbare Permanentspeicherzelle |
Country Status (3)
Country | Link |
---|---|
US (1) | US5747846A (de) |
JP (1) | JP3344598B2 (de) |
DE (1) | DE4442067B8 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5877054A (en) * | 1995-06-29 | 1999-03-02 | Sharp Kabushiki Kaisha | Method of making nonvolatile semiconductor memory |
EP0752721B1 (de) | 1995-06-29 | 2009-04-29 | Sharp Kabushiki Kaisha | Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung |
JP4659662B2 (ja) * | 1997-04-28 | 2011-03-30 | ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
US7602007B2 (en) | 1997-04-28 | 2009-10-13 | Yoshihiro Kumazaki | Semiconductor device having controllable transistor threshold voltage |
JPH1187664A (ja) | 1997-04-28 | 1999-03-30 | Nippon Steel Corp | 半導体装置及びその製造方法 |
JP4032454B2 (ja) * | 1997-06-27 | 2008-01-16 | ソニー株式会社 | 三次元回路素子の製造方法 |
US5929478A (en) * | 1997-07-02 | 1999-07-27 | Motorola, Inc. | Single level gate nonvolatile memory device and method for accessing the same |
US6180492B1 (en) * | 1999-01-25 | 2001-01-30 | United Microelectronics Corp. | Method of forming a liner for shallow trench isolation |
US6627954B1 (en) * | 1999-03-19 | 2003-09-30 | Silicon Wave, Inc. | Integrated circuit capacitor in a silicon-on-insulator integrated circuit |
WO2001022493A1 (en) * | 1999-09-23 | 2001-03-29 | C.P. Clare Corporation | Integrated high voltage capacitive coupling circuit using bonded and trenched isolated wafer technology |
KR100358068B1 (ko) * | 1999-12-28 | 2002-10-25 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
JP2001339071A (ja) * | 2000-03-22 | 2001-12-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6888750B2 (en) * | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
JP4281331B2 (ja) | 2002-01-21 | 2009-06-17 | 株式会社デンソー | 不揮発性半導体記憶装置 |
JP4262933B2 (ja) * | 2002-05-30 | 2009-05-13 | Necエレクトロニクス株式会社 | 高周波回路素子 |
US7052959B2 (en) * | 2004-01-08 | 2006-05-30 | Semiconductor Components Industries, Llc | Method of forming an EPROM cell and structure therefor |
JP4908901B2 (ja) * | 2006-04-11 | 2012-04-04 | ラピスセミコンダクタ株式会社 | 不揮発性メモリの製造方法 |
JP2007287795A (ja) * | 2006-04-13 | 2007-11-01 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US20080108212A1 (en) * | 2006-10-19 | 2008-05-08 | Atmel Corporation | High voltage vertically oriented eeprom device |
JP5068057B2 (ja) * | 2006-10-19 | 2012-11-07 | 三菱電機株式会社 | 半導体装置 |
US7863709B1 (en) * | 2007-04-16 | 2011-01-04 | Marvell International Ltd. | Low base resistance bipolar junction transistor array |
US20100006912A1 (en) * | 2008-07-14 | 2010-01-14 | Honeywell International Inc. | Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same |
US20100200918A1 (en) * | 2009-02-10 | 2010-08-12 | Honeywell International Inc. | Heavy Ion Upset Hardened Floating Body SRAM Cells |
JP7242285B2 (ja) * | 2018-12-19 | 2023-03-20 | キオクシア株式会社 | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4019197A (en) * | 1975-01-17 | 1977-04-19 | U.S. Philips Corporation | Semiconductor floating gate storage device with lateral electrode system |
US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
US4924278A (en) * | 1987-06-19 | 1990-05-08 | Advanced Micro Devices, Inc. | EEPROM using a merged source and control gate |
US4970565A (en) * | 1988-09-01 | 1990-11-13 | Atmel Corporation | Sealed charge storage structure |
JPH04212471A (ja) * | 1990-07-12 | 1992-08-04 | Hitachi Ltd | 半導体集積回路装置 |
US5223731A (en) * | 1988-06-30 | 1993-06-29 | Goldstar Electron Co., Ltd. | EPROM cell using trench isolation to provide leak current immunity |
US5307312A (en) * | 1990-07-24 | 1994-04-26 | Sgs-Thomson Microelectronics S.R.L. | Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223731A (en) * | 1978-11-24 | 1980-09-23 | Texaco Inc. | Method for enhanced recovery of petroleum |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
JP2788269B2 (ja) * | 1988-02-08 | 1998-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPH0297056A (ja) * | 1988-10-03 | 1990-04-09 | Ricoh Co Ltd | 半導体装置 |
US5078498A (en) * | 1990-06-29 | 1992-01-07 | Texas Instruments Incorporated | Two-transistor programmable memory cell with a vertical floating gate transistor |
US5086325A (en) * | 1990-11-21 | 1992-02-04 | Atmel Corporation | Narrow width EEPROM with single diffusion electrode formation |
US5355330A (en) * | 1991-08-29 | 1994-10-11 | Hitachi, Ltd. | Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode |
JPH05211307A (ja) * | 1991-12-12 | 1993-08-20 | Tdk Corp | 不揮発性メモリセル |
-
1993
- 1993-11-25 JP JP29547593A patent/JP3344598B2/ja not_active Expired - Lifetime
-
1994
- 1994-11-23 US US08/346,287 patent/US5747846A/en not_active Expired - Lifetime
- 1994-11-25 DE DE4442067A patent/DE4442067B8/de not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4019197A (en) * | 1975-01-17 | 1977-04-19 | U.S. Philips Corporation | Semiconductor floating gate storage device with lateral electrode system |
US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
US4924278A (en) * | 1987-06-19 | 1990-05-08 | Advanced Micro Devices, Inc. | EEPROM using a merged source and control gate |
US5223731A (en) * | 1988-06-30 | 1993-06-29 | Goldstar Electron Co., Ltd. | EPROM cell using trench isolation to provide leak current immunity |
US4970565A (en) * | 1988-09-01 | 1990-11-13 | Atmel Corporation | Sealed charge storage structure |
JPH04212471A (ja) * | 1990-07-12 | 1992-08-04 | Hitachi Ltd | 半導体集積回路装置 |
US5457335A (en) * | 1990-07-12 | 1995-10-10 | Hitachi, Ltd. | Floating gate FET with hydrogen barrier shield |
US5307312A (en) * | 1990-07-24 | 1994-04-26 | Sgs-Thomson Microelectronics S.R.L. | Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process |
Also Published As
Publication number | Publication date |
---|---|
JPH07147340A (ja) | 1995-06-06 |
DE4442067B4 (de) | 2008-01-10 |
DE4442067A1 (de) | 1995-06-01 |
US5747846A (en) | 1998-05-05 |
JP3344598B2 (ja) | 2002-11-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8127 | New person/name/address of the applicant |
Owner name: DENSO CORP., KARIYA, AICHI, JP |
|
8110 | Request for examination paragraph 44 | ||
8128 | New person/name/address of the agent |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAISER, |
|
8396 | Reprint of erroneous front page | ||
8364 | No opposition during term of opposition | ||
R084 | Declaration of willingness to licence | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20140603 |