DE3688064T2 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE3688064T2
DE3688064T2 DE8686905398T DE3688064T DE3688064T2 DE 3688064 T2 DE3688064 T2 DE 3688064T2 DE 8686905398 T DE8686905398 T DE 8686905398T DE 3688064 T DE3688064 T DE 3688064T DE 3688064 T2 DE3688064 T2 DE 3688064T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686905398T
Other languages
English (en)
Other versions
DE3688064D1 (de
Inventor
Takao Kuroda
Akiyoshi Watanabe
Shinji Tsuji
Akio Ohishi
Hiroyoshi Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3688064D1 publication Critical patent/DE3688064D1/de
Application granted granted Critical
Publication of DE3688064T2 publication Critical patent/DE3688064T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8686905398T 1985-09-04 1986-08-29 Halbleitervorrichtung. Expired - Fee Related DE3688064T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60193739A JPH0821748B2 (ja) 1985-09-04 1985-09-04 半導体レ−ザ装置
PCT/JP1986/000443 WO1987001522A1 (en) 1985-09-04 1986-08-29 Semiconductor device

Publications (2)

Publication Number Publication Date
DE3688064D1 DE3688064D1 (de) 1993-04-22
DE3688064T2 true DE3688064T2 (de) 1993-06-24

Family

ID=16313004

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686905398T Expired - Fee Related DE3688064T2 (de) 1985-09-04 1986-08-29 Halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US4819036A (de)
EP (1) EP0232431B1 (de)
JP (1) JPH0821748B2 (de)
DE (1) DE3688064T2 (de)
WO (1) WO1987001522A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914488A (en) * 1987-06-11 1990-04-03 Hitachi, Ltd. Compound semiconductor structure and process for making same
JP2724827B2 (ja) * 1987-07-02 1998-03-09 国際電信電話株式会社 赤外発光素子
JPS6488518A (en) * 1987-09-30 1989-04-03 Hitachi Ltd Semiconductor device for controlling beam of light
JPH01264286A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 半導体量子井戸レーザ
DE3838016A1 (de) * 1988-11-09 1990-05-10 Siemens Ag Halbleiterlaser im system gaa1inas
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5160993A (en) * 1990-06-06 1992-11-03 Fujitsu Limited High speed optosemiconductor device having multiple quantum wells
US5965899A (en) * 1990-10-31 1999-10-12 Lockheed Martin Corp. Miniband transport quantum well detector
JPH06502743A (ja) * 1990-10-31 1994-03-24 マーチン・マリエッタ・コーポレーション ミニバンド移送量子ウェル赤外線検知器
US5224114A (en) * 1990-11-11 1993-06-29 Canon Kabushiki Kaisha Semiconductor laser devices with a plurality of light emitting layers having different bands gaps and methods for driving the same
US5132763A (en) * 1991-02-07 1992-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration InAs hole-immobilized doping superlattice long-wave-infrared detector
DE69211737T2 (de) * 1991-03-27 1996-10-31 Fujitsu Ltd Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis
US5160982A (en) * 1991-07-01 1992-11-03 Motorola, Inc. Phonon suppression in quantum wells
FR2678774B1 (fr) * 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
US5202896A (en) * 1991-07-16 1993-04-13 The United States Of America As Represented By The Secretary Of The Air Force Bipolar inversion channel field effect transistor laser
AU2401792A (en) * 1991-08-01 1993-03-02 Optronics Ireland A laser structure
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
BE1007251A3 (nl) * 1993-06-28 1995-05-02 Philips Electronics Nv Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
US5591407A (en) * 1995-04-21 1997-01-07 American Research Corporation Of Virginia Laser diode sensor
US6277651B1 (en) 1998-07-09 2001-08-21 Calspan Srl Corporation Diode laser electrochemical sensor for detecting chemical and biological analytes
US6900467B2 (en) * 2001-05-21 2005-05-31 Stanley Electric Co., Ltd. Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
JP2004146498A (ja) * 2002-10-23 2004-05-20 Stanley Electric Co Ltd 半導体発光装置
IL220675B (en) * 2012-06-28 2019-10-31 Elta Systems Ltd phototransistor
US9640716B2 (en) 2015-07-28 2017-05-02 Genesis Photonics Inc. Multiple quantum well structure and method for manufacturing the same
CN114481088B (zh) * 2022-04-18 2022-07-01 苏州长光华芯光电技术股份有限公司 一种超晶格有源层及半导体发光结构的制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250515A (en) * 1978-06-09 1981-02-10 The United States Of America As Represented By The Secretary Of The Army Heterojunction superlattice with potential well depth greater than half the bandgap
DE3276979D1 (en) * 1981-05-06 1987-09-17 Univ Illinois Method of forming wide bandgap region within multilayer semiconductors
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
JPS58207684A (ja) * 1982-05-28 1983-12-03 Nippon Telegr & Teleph Corp <Ntt> ダブルヘテロ接合型半導体発光装置
JPS5944797B2 (ja) * 1982-07-28 1984-11-01 工業技術院長 半導体レ−ザ装置の製造方法
JPS5931086A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 電流狭窄型半導体レ−ザ
JPS607121A (ja) * 1983-06-24 1985-01-14 Nec Corp 超格子の構造
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4679061A (en) * 1985-06-14 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Superlattice photoconductor

Also Published As

Publication number Publication date
EP0232431A1 (de) 1987-08-19
US4819036A (en) 1989-04-04
JPH0821748B2 (ja) 1996-03-04
EP0232431A4 (de) 1988-01-26
WO1987001522A1 (en) 1987-03-12
DE3688064D1 (de) 1993-04-22
JPS6254988A (ja) 1987-03-10
EP0232431B1 (de) 1993-03-17

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee