DE3585173D1 - Halbleiterbauelement mit versenktem kondensator. - Google Patents
Halbleiterbauelement mit versenktem kondensator.Info
- Publication number
- DE3585173D1 DE3585173D1 DE8585302109T DE3585173T DE3585173D1 DE 3585173 D1 DE3585173 D1 DE 3585173D1 DE 8585302109 T DE8585302109 T DE 8585302109T DE 3585173 T DE3585173 T DE 3585173T DE 3585173 D1 DE3585173 D1 DE 3585173D1
- Authority
- DE
- Germany
- Prior art keywords
- sunk
- condenser
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59062728A JPS60206163A (ja) | 1984-03-30 | 1984-03-30 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3585173D1 true DE3585173D1 (de) | 1992-02-27 |
Family
ID=13208712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585302109T Expired - Lifetime DE3585173D1 (de) | 1984-03-30 | 1985-03-26 | Halbleiterbauelement mit versenktem kondensator. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0159824B1 (de) |
JP (1) | JPS60206163A (de) |
KR (1) | KR900005664B1 (de) |
DE (1) | DE3585173D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930007522B1 (ko) * | 1985-03-08 | 1993-08-12 | 가부시끼 가이샤 히다찌세이사꾸쇼 | 종형 커패시터를 사용한 반도체메모리 |
US4751558A (en) * | 1985-10-31 | 1988-06-14 | International Business Machines Corporation | High density memory with field shield |
JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
JPS63122261A (ja) * | 1986-11-12 | 1988-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
DE3855945T2 (de) * | 1987-07-10 | 1997-11-13 | Toshiba Kawasaki Kk | Halbleiterbauelement mit Bereichen unterschiedlicher Störstellenkonzentration |
US5260226A (en) * | 1987-07-10 | 1993-11-09 | Kabushiki Kaisha Toshiba | Semiconductor device having different impurity concentration wells |
US5726475A (en) * | 1987-07-10 | 1998-03-10 | Kabushiki Kaisha Toshiba | Semiconductor device having different impurity concentration wells |
KR910000246B1 (ko) * | 1988-02-15 | 1991-01-23 | 삼성전자 주식회사 | 반도체 메모리장치 |
US5208597A (en) * | 1988-10-13 | 1993-05-04 | Crystal Semiconductor | Compensated capacitors for switched capacitor input of an analog-to-digital converter |
US4918454A (en) * | 1988-10-13 | 1990-04-17 | Crystal Semiconductor Corporation | Compensated capacitors for switched capacitor input of an analog-to-digital converter |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186354A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory storage and manufacture thereof |
JPS583261A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | 竪型埋め込みキヤパシタの製造方法 |
JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
-
1984
- 1984-03-30 JP JP59062728A patent/JPS60206163A/ja active Pending
- 1984-10-19 KR KR1019840006508A patent/KR900005664B1/ko not_active IP Right Cessation
-
1985
- 1985-03-26 DE DE8585302109T patent/DE3585173D1/de not_active Expired - Lifetime
- 1985-03-26 EP EP85302109A patent/EP0159824B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0159824B1 (de) | 1992-01-15 |
EP0159824A2 (de) | 1985-10-30 |
KR900005664B1 (ko) | 1990-08-03 |
EP0159824A3 (en) | 1987-04-01 |
KR850006981A (ko) | 1985-10-25 |
JPS60206163A (ja) | 1985-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |