DE3585173D1 - Halbleiterbauelement mit versenktem kondensator. - Google Patents

Halbleiterbauelement mit versenktem kondensator.

Info

Publication number
DE3585173D1
DE3585173D1 DE8585302109T DE3585173T DE3585173D1 DE 3585173 D1 DE3585173 D1 DE 3585173D1 DE 8585302109 T DE8585302109 T DE 8585302109T DE 3585173 T DE3585173 T DE 3585173T DE 3585173 D1 DE3585173 D1 DE 3585173D1
Authority
DE
Germany
Prior art keywords
sunk
condenser
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585302109T
Other languages
English (en)
Inventor
Yukihito C O Patent Div Oowaki
Fumio C O Patent Div Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3585173D1 publication Critical patent/DE3585173D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
DE8585302109T 1984-03-30 1985-03-26 Halbleiterbauelement mit versenktem kondensator. Expired - Lifetime DE3585173D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59062728A JPS60206163A (ja) 1984-03-30 1984-03-30 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3585173D1 true DE3585173D1 (de) 1992-02-27

Family

ID=13208712

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585302109T Expired - Lifetime DE3585173D1 (de) 1984-03-30 1985-03-26 Halbleiterbauelement mit versenktem kondensator.

Country Status (4)

Country Link
EP (1) EP0159824B1 (de)
JP (1) JPS60206163A (de)
KR (1) KR900005664B1 (de)
DE (1) DE3585173D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930007522B1 (ko) * 1985-03-08 1993-08-12 가부시끼 가이샤 히다찌세이사꾸쇼 종형 커패시터를 사용한 반도체메모리
US4751558A (en) * 1985-10-31 1988-06-14 International Business Machines Corporation High density memory with field shield
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
DE3855945T2 (de) * 1987-07-10 1997-11-13 Toshiba Kawasaki Kk Halbleiterbauelement mit Bereichen unterschiedlicher Störstellenkonzentration
US5260226A (en) * 1987-07-10 1993-11-09 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US5726475A (en) * 1987-07-10 1998-03-10 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
US5208597A (en) * 1988-10-13 1993-05-04 Crystal Semiconductor Compensated capacitors for switched capacitor input of an analog-to-digital converter
US4918454A (en) * 1988-10-13 1990-04-17 Crystal Semiconductor Corporation Compensated capacitors for switched capacitor input of an analog-to-digital converter

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186354A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory storage and manufacture thereof
JPS583261A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタの製造方法
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ

Also Published As

Publication number Publication date
EP0159824B1 (de) 1992-01-15
EP0159824A2 (de) 1985-10-30
KR900005664B1 (ko) 1990-08-03
EP0159824A3 (en) 1987-04-01
KR850006981A (ko) 1985-10-25
JPS60206163A (ja) 1985-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)