DE3575814D1 - Halbleiteranordnung mit grosser geschwindigkeit. - Google Patents
Halbleiteranordnung mit grosser geschwindigkeit.Info
- Publication number
- DE3575814D1 DE3575814D1 DE8585308371T DE3575814T DE3575814D1 DE 3575814 D1 DE3575814 D1 DE 3575814D1 DE 8585308371 T DE8585308371 T DE 8585308371T DE 3575814 T DE3575814 T DE 3575814T DE 3575814 D1 DE3575814 D1 DE 3575814D1
- Authority
- DE
- Germany
- Prior art keywords
- high speed
- semiconductor arrangement
- semiconductor
- arrangement
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59242412A JPS61121358A (ja) | 1984-11-19 | 1984-11-19 | 高速半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3575814D1 true DE3575814D1 (de) | 1990-03-08 |
Family
ID=17088741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585308371T Expired - Fee Related DE3575814D1 (de) | 1984-11-19 | 1985-11-18 | Halbleiteranordnung mit grosser geschwindigkeit. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0186301B1 (de) |
JP (1) | JPS61121358A (de) |
KR (1) | KR920002670B1 (de) |
DE (1) | DE3575814D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6158268A (ja) * | 1984-08-30 | 1986-03-25 | Fujitsu Ltd | 高速半導体装置 |
US4691215A (en) * | 1985-01-09 | 1987-09-01 | American Telephone And Telegraph Company | Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter |
US4912539A (en) * | 1988-08-05 | 1990-03-27 | The University Of Michigan | Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier |
JPH02210878A (ja) * | 1989-02-10 | 1990-08-22 | Yokogawa Electric Corp | ホットエレクトロントランジスタ |
JP2731089B2 (ja) * | 1991-10-02 | 1998-03-25 | 三菱電機株式会社 | 高速動作半導体装置およびその製造方法 |
KR0170181B1 (ko) * | 1994-12-19 | 1999-02-01 | 정선종 | 공진 터널링 핫 전자 트랜지스터 |
DE19824111A1 (de) * | 1998-05-29 | 1999-12-02 | Daimler Chrysler Ag | Resonanz Phasen Transistor mit gegenphasiger Ladungsträgerinjektion |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4353081A (en) * | 1980-01-29 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Graded bandgap rectifying semiconductor devices |
-
1984
- 1984-11-19 JP JP59242412A patent/JPS61121358A/ja active Granted
-
1985
- 1985-11-18 DE DE8585308371T patent/DE3575814D1/de not_active Expired - Fee Related
- 1985-11-18 KR KR1019850008603A patent/KR920002670B1/ko not_active IP Right Cessation
- 1985-11-18 EP EP85308371A patent/EP0186301B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0186301A1 (de) | 1986-07-02 |
EP0186301B1 (de) | 1990-01-31 |
JPS61121358A (ja) | 1986-06-09 |
KR920002670B1 (ko) | 1992-03-31 |
KR860004468A (ko) | 1986-06-23 |
JPH0458707B2 (de) | 1992-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |