DE3483498D1 - Halbleiteranordnung des harzverkapselungstyps. - Google Patents
Halbleiteranordnung des harzverkapselungstyps.Info
- Publication number
- DE3483498D1 DE3483498D1 DE8484107525T DE3483498T DE3483498D1 DE 3483498 D1 DE3483498 D1 DE 3483498D1 DE 8484107525 T DE8484107525 T DE 8484107525T DE 3483498 T DE3483498 T DE 3483498T DE 3483498 D1 DE3483498 D1 DE 3483498D1
- Authority
- DE
- Germany
- Prior art keywords
- resin enclosure
- semiconductor resin
- enclosure type
- semiconductor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58118519A JPS6010645A (ja) | 1983-06-30 | 1983-06-30 | 樹脂封止型半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3483498D1 true DE3483498D1 (de) | 1990-12-06 |
Family
ID=14738627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484107525T Expired - Lifetime DE3483498D1 (de) | 1983-06-30 | 1984-06-29 | Halbleiteranordnung des harzverkapselungstyps. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4654692A (de) |
EP (1) | EP0130591B1 (de) |
JP (1) | JPS6010645A (de) |
DE (1) | DE3483498D1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61129014U (de) * | 1985-01-30 | 1986-08-13 | ||
JPS6457732A (en) * | 1987-08-28 | 1989-03-06 | Matsushita Electronics Corp | Semiconductor device |
US4835591A (en) * | 1987-12-29 | 1989-05-30 | Mitsubishi Denki Kabushiki Kaisha | Wiring arrangement for semiconductor devices |
EP0327336B1 (de) * | 1988-02-01 | 1997-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Elektronische Anordnungen mit Kohlenstoffschichten |
JPH0274039A (ja) * | 1988-09-09 | 1990-03-14 | Texas Instr Japan Ltd | 電子回路装置 |
JPH02192146A (ja) * | 1989-01-20 | 1990-07-27 | Toshiba Corp | 半導体装置 |
JPH03129738A (ja) * | 1989-07-10 | 1991-06-03 | Nec Corp | 半導体装置 |
NL8901822A (nl) * | 1989-07-14 | 1991-02-01 | Philips Nv | Geintegreerde schakeling met stroomdetectie. |
US5317194A (en) * | 1989-10-17 | 1994-05-31 | Kabushiki Kaisha Toshiba | Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink |
EP0499063B1 (de) * | 1991-01-22 | 2005-09-28 | Nec Corporation | Plastikumhüllte integrierte Halbleiterschaltung mit einer Verdrahtungschicht |
US5686356A (en) | 1994-09-30 | 1997-11-11 | Texas Instruments Incorporated | Conductor reticulation for improved device planarity |
KR0170316B1 (ko) * | 1995-07-13 | 1999-02-01 | 김광호 | 반도체 장치의 패드 설계 방법 |
JP3500308B2 (ja) | 1997-08-13 | 2004-02-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 集積回路 |
JP3826022B2 (ja) | 2000-12-15 | 2006-09-27 | キヤノン株式会社 | 配線を有する基板及び電子源及び画像表示装置 |
US20030122258A1 (en) * | 2001-12-28 | 2003-07-03 | Sudhakar Bobba | Current crowding reduction technique using slots |
US6818996B2 (en) * | 2002-12-20 | 2004-11-16 | Lsi Logic Corporation | Multi-level redistribution layer traces for reducing current crowding in flipchip solder bumps |
WO2005048314A2 (en) * | 2003-11-12 | 2005-05-26 | Silicon Pipe, Inc. | Tapered dielectric and conductor structures and applications thereof |
US7466021B2 (en) * | 2003-11-17 | 2008-12-16 | Interconnect Portfolio, Llp | Memory packages having stair step interconnection layers |
US7253528B2 (en) * | 2005-02-01 | 2007-08-07 | Avago Technologies General Ip Pte. Ltd. | Trace design to minimize electromigration damage to solder bumps |
US9177914B2 (en) * | 2012-11-15 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal pad structure over TSV to reduce shorting of upper metal layer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3766448A (en) * | 1972-02-04 | 1973-10-16 | Gen Instrument Corp | Integrated igfet circuits with increased inversion voltage under metallization runs |
US4438450A (en) * | 1979-11-30 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Solid state device with conductors having chain-shaped grain structure |
JPS56150830A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor device |
JPS5772349A (en) * | 1980-10-23 | 1982-05-06 | Nec Corp | Semiconductor integrated circuit device |
DE3115406A1 (de) * | 1981-04-16 | 1982-11-25 | Robert Bosch Gmbh, 7000 Stuttgart | Anordnung zur erhoehung des ausgangsstroms von verstaerkern |
-
1983
- 1983-06-30 JP JP58118519A patent/JPS6010645A/ja active Granted
-
1984
- 1984-06-29 DE DE8484107525T patent/DE3483498D1/de not_active Expired - Lifetime
- 1984-06-29 EP EP84107525A patent/EP0130591B1/de not_active Expired
-
1986
- 1986-08-06 US US06/894,508 patent/US4654692A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0130591A2 (de) | 1985-01-09 |
JPH0228894B2 (de) | 1990-06-27 |
JPS6010645A (ja) | 1985-01-19 |
US4654692A (en) | 1987-03-31 |
EP0130591B1 (de) | 1990-10-31 |
EP0130591A3 (en) | 1986-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3484313D1 (de) | Integrierte halbleiterschaltung. | |
DE3485409D1 (de) | Halbleiterschaltvorrichtung. | |
NL191912C (nl) | Geïntegreerd circuit. | |
DE3382212D1 (de) | Halbleiterspeicher. | |
DE3381545D1 (de) | Halbleiterspeicheranordnung. | |
DE3481880D1 (de) | Schaltkreis. | |
FI841727A0 (fi) | Vattenloeslig modifierad polyuretan. | |
DE3483769D1 (de) | Halbleiterdiode. | |
DE3485174D1 (de) | Halbleiterspeicheranordnung. | |
DE3483498D1 (de) | Halbleiteranordnung des harzverkapselungstyps. | |
DE3485625D1 (de) | Halbleiterspeicheranordnung. | |
DE3484180D1 (de) | Halbleiterspeicheranordnung. | |
DE3483959D1 (de) | Hohlleiterschalter. | |
DE3481355D1 (de) | Halbleiterspeicheranordnung. | |
DE3485592D1 (de) | Integrierte halbleiterschaltungsanordnung. | |
DE3486077D1 (de) | Integrierte halbleiterschaltungsanordnung. | |
DE3486094D1 (de) | Halbleiterspeicheranordnung. | |
DE3484630D1 (de) | Halbleiterspeicheranordnung. | |
DE3481958D1 (de) | Integrierte halbleiterschaltungsanordnung. | |
DE3486082D1 (de) | Halbleiterspeicheranordnung. | |
DE3484817D1 (de) | Halbleiteranordnung. | |
DE3481395D1 (de) | Halbleiterspeicheranordnung. | |
DE3381665D1 (de) | Halbleiteranordnung in harz-verkapselung. | |
DE3381723D1 (de) | Halbleiterspeicheranordnung. | |
DE3483576D1 (de) | Tor-schaltungsanordnung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |