DE3485409D1 - Halbleiterschaltvorrichtung. - Google Patents

Halbleiterschaltvorrichtung.

Info

Publication number
DE3485409D1
DE3485409D1 DE8484112922T DE3485409T DE3485409D1 DE 3485409 D1 DE3485409 D1 DE 3485409D1 DE 8484112922 T DE8484112922 T DE 8484112922T DE 3485409 T DE3485409 T DE 3485409T DE 3485409 D1 DE3485409 D1 DE 3485409D1
Authority
DE
Germany
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484112922T
Other languages
English (en)
Inventor
Norikazu Tokunaga
Hiroshi Fukui
Kouzou Watanabe
Hisao Amano
Masayoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Healthcare Manufacturing Ltd
Original Assignee
Hitachi Ltd
Hitachi Medical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20089283A external-priority patent/JPS6093820A/ja
Priority claimed from JP20469683A external-priority patent/JPS6097718A/ja
Priority claimed from JP2710684A external-priority patent/JPS60172819A/ja
Priority claimed from JP3024384A external-priority patent/JPS60176327A/ja
Priority claimed from JP8183484A external-priority patent/JPS60226211A/ja
Priority claimed from JP10258284A external-priority patent/JPS60247325A/ja
Application filed by Hitachi Ltd, Hitachi Medical Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3485409D1 publication Critical patent/DE3485409D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
DE8484112922T 1983-10-28 1984-10-26 Halbleiterschaltvorrichtung. Expired - Lifetime DE3485409D1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP20089283A JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路
JP20469683A JPS6097718A (ja) 1983-11-02 1983-11-02 スイツチ回路
JP2710684A JPS60172819A (ja) 1984-02-17 1984-02-17 スイツチ回路
JP3024384A JPS60176327A (ja) 1984-02-22 1984-02-22 スイツチ回路
JP8183484A JPS60226211A (ja) 1984-04-25 1984-04-25 スイツチ
JP10258284A JPS60247325A (ja) 1984-05-23 1984-05-23 スイツチ回路

Publications (1)

Publication Number Publication Date
DE3485409D1 true DE3485409D1 (de) 1992-02-13

Family

ID=27549328

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484112922T Expired - Lifetime DE3485409D1 (de) 1983-10-28 1984-10-26 Halbleiterschaltvorrichtung.

Country Status (3)

Country Link
US (1) US4692643A (de)
EP (1) EP0140349B1 (de)
DE (1) DE3485409D1 (de)

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DE3714173A1 (de) * 1987-04-24 1988-11-10 Licentia Gmbh Vergleichmaessigung der spannungsaufteilung beim abschalten einer reihenschaltung gategesteuerter halbleiter
DE3822958A1 (de) * 1988-07-07 1990-01-11 Olympia Aeg Modulationsverstaerker fuer hohe spannungen
DE3822991A1 (de) * 1988-07-07 1990-01-11 Olympia Aeg Hochspannungsschalter
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JP2664219B2 (ja) * 1988-09-20 1997-10-15 株式会社日立製作所 駆動回路
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SE515004C2 (sv) * 1998-09-01 2001-05-28 Klas Haakan Eklund Seriekoppling av aktiva halvledarkomponenter och förfarande för att seriekoppla aktiva halvledarkomponenter
US6664842B1 (en) * 2001-12-28 2003-12-16 Inphi Corporation FET active load and current source
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US7071763B2 (en) * 2002-12-27 2006-07-04 Emosyn America, Inc. Transistor circuits for switching high voltages and currents without causing snapback or breakdown
US20040228056A1 (en) * 2003-05-15 2004-11-18 Vice Michael W. Switching circuit with equity voltage division
US7215739B2 (en) * 2004-07-20 2007-05-08 Communications & Power Industries Canada Inc. Active dose reduction device and method
CN100452653C (zh) * 2005-12-27 2009-01-14 中国科学院上海光学精密机械研究所 高速高压开关电路
DE102007014268A1 (de) * 2007-03-21 2008-10-02 Ltb Lasertechnik Berlin Gmbh Schaltanordnung mit zumindest zwei ausgangsseitig elektrisch in Reihe geschalteten Schaltstufen
US8687325B2 (en) * 2008-09-11 2014-04-01 General Electric Company Micro-electromechanical switch protection in series parallel topology
US8455948B2 (en) 2011-01-07 2013-06-04 Infineon Technologies Austria Ag Transistor arrangement with a first transistor and with a plurality of second transistors
US8569842B2 (en) * 2011-01-07 2013-10-29 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
US8575990B2 (en) 2011-10-14 2013-11-05 Silicon Power Corporation Matrix-stages solid state ultrafast switch
CN102497088B (zh) 2011-12-15 2014-06-25 矽力杰半导体技术(杭州)有限公司 一种mos管的自适应串联电路
US8866253B2 (en) * 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
FR2988931B1 (fr) * 2012-03-30 2015-10-16 Schneider Toshiba Inverter Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage
US8971080B2 (en) 2012-07-11 2015-03-03 Infineon Technologies Dresden Gmbh Circuit arrangement with a rectifier circuit
US9859274B2 (en) * 2012-07-11 2018-01-02 Infineon Technologies Dresden Gmbh Integrated circuit with at least two switches
US8995158B2 (en) 2012-07-11 2015-03-31 Infineon Technologies Dresden Gmbh Circuit arrangement with a rectifier circuit
US9035690B2 (en) * 2012-08-30 2015-05-19 Infineon Technologies Dresden Gmbh Circuit arrangement with a first semiconductor device and with a plurality of second semiconductor devices
FR3002703B1 (fr) * 2013-02-25 2017-07-21 Schneider Toshiba Inverter Europe Sas Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage
US9269711B2 (en) * 2013-07-01 2016-02-23 Infineon Technologies Austria Ag Semiconductor device
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9755641B1 (en) 2014-01-10 2017-09-05 Reno Technologies, Inc. High speed high voltage switching circuit
US9865432B1 (en) 2014-01-10 2018-01-09 Reno Technologies, Inc. RF impedance matching network
US10455729B2 (en) 2014-01-10 2019-10-22 Reno Technologies, Inc. Enclosure cooling system
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US9196459B2 (en) 2014-01-10 2015-11-24 Reno Technologies, Inc. RF impedance matching network
US9697991B2 (en) 2014-01-10 2017-07-04 Reno Technologies, Inc. RF impedance matching network
US9496122B1 (en) 2014-01-10 2016-11-15 Reno Technologies, Inc. Electronically variable capacitor and RF matching network incorporating same
US20150249448A1 (en) * 2014-02-28 2015-09-03 Infineon Technologies Austria Ag Electronic Circuit Operable as an Electronic Switch
US9400513B2 (en) 2014-06-30 2016-07-26 Infineon Technologies Austria Ag Cascode circuit
US9190993B1 (en) * 2015-01-08 2015-11-17 United Silicon Carbide, Inc. High voltage switch
US9525412B2 (en) 2015-02-18 2016-12-20 Reno Technologies, Inc. Switching circuit
US9306533B1 (en) 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US9729122B2 (en) 2015-02-18 2017-08-08 Reno Technologies, Inc. Switching circuit
US11017983B2 (en) 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
JP6639103B2 (ja) * 2015-04-15 2020-02-05 株式会社東芝 スイッチングユニット及び電源回路
US11081316B2 (en) 2015-06-29 2021-08-03 Reno Technologies, Inc. Impedance matching network and method
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US10984986B2 (en) 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
US11342161B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Switching circuit with voltage bias
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US11342160B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Filter for impedance matching
US11150283B2 (en) 2015-06-29 2021-10-19 Reno Technologies, Inc. Amplitude and phase detection circuit
JP6443558B2 (ja) 2015-09-18 2018-12-26 アイシン・エィ・ダブリュ株式会社 電動車両用インバータ装置
JP6356718B2 (ja) * 2016-03-14 2018-07-11 株式会社東芝 半導体装置
US11315758B2 (en) 2017-07-10 2022-04-26 Reno Technologies, Inc. Impedance matching using electronically variable capacitance and frequency considerations
US10483090B2 (en) 2017-07-10 2019-11-19 Reno Technologies, Inc. Restricted capacitor switching
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US11114280B2 (en) 2017-07-10 2021-09-07 Reno Technologies, Inc. Impedance matching with multi-level power setpoint
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US10727029B2 (en) 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
EP3719997A1 (de) * 2019-04-01 2020-10-07 Siemens Aktiengesellschaft Beschaltung eines halbleiterschalters
US11521831B2 (en) 2019-05-21 2022-12-06 Reno Technologies, Inc. Impedance matching network and method with reduced memory requirements

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US3287576A (en) * 1964-07-23 1966-11-22 Westinghouse Electric Corp Semiconductor switching circuit comprising series-connected gate controlled switches to provide slave control of switches
JPS5629458B2 (de) * 1973-07-02 1981-07-08
JPS5639631A (en) * 1979-09-10 1981-04-15 Hitachi Ltd Solid-state relay
AU6180580A (en) * 1979-09-11 1981-03-19 Borg-Warner Corporation Switching system
DE2967520D1 (en) * 1979-12-28 1985-10-31 Int Rectifier Corp Field effect transistor circuit configuration
DE3026040C2 (de) * 1980-07-09 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Schalter mit in Serie geschalteten MOS-FET
WO1983001157A1 (en) * 1981-09-16 1983-03-31 Gould Inc Efficient current modulator useful with inductive loads
JPS6051321A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd 高電圧スイツチ装置

Also Published As

Publication number Publication date
EP0140349B1 (de) 1992-01-02
US4692643A (en) 1987-09-08
EP0140349A2 (de) 1985-05-08
EP0140349A3 (en) 1987-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee