DE3482694D1 - Ausgangsschaltung einer integrierten halbleiterschaltung. - Google Patents

Ausgangsschaltung einer integrierten halbleiterschaltung.

Info

Publication number
DE3482694D1
DE3482694D1 DE8484308891T DE3482694T DE3482694D1 DE 3482694 D1 DE3482694 D1 DE 3482694D1 DE 8484308891 T DE8484308891 T DE 8484308891T DE 3482694 T DE3482694 T DE 3482694T DE 3482694 D1 DE3482694 D1 DE 3482694D1
Authority
DE
Germany
Prior art keywords
circuit
integrated semiconductor
output circuit
output
semiconductor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484308891T
Other languages
English (en)
Inventor
Shigeru C O Fujitsu Limi Fujii
Kouichi C O Fujitsu Yamashita
Tomoaki C O Fujitsu Lim Tanabe
Yoshio C O Fujitsu Li Kuniyasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3482694D1 publication Critical patent/DE3482694D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00346Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • H01L27/11807CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8484308891T 1983-12-23 1984-12-19 Ausgangsschaltung einer integrierten halbleiterschaltung. Expired - Fee Related DE3482694D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243432A JP2564787B2 (ja) 1983-12-23 1983-12-23 ゲートアレー大規模集積回路装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE3482694D1 true DE3482694D1 (de) 1990-08-16

Family

ID=17103781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484308891T Expired - Fee Related DE3482694D1 (de) 1983-12-23 1984-12-19 Ausgangsschaltung einer integrierten halbleiterschaltung.

Country Status (6)

Country Link
US (2) US4727266A (de)
EP (1) EP0147998B1 (de)
JP (1) JP2564787B2 (de)
KR (1) KR900006786B1 (de)
DE (1) DE3482694D1 (de)
IE (1) IE56987B1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6346748A (ja) * 1986-08-15 1988-02-27 Nec Corp 論理回路
JP2557411B2 (ja) * 1986-10-01 1996-11-27 株式会社東芝 半導体集積回路
JPH083773B2 (ja) * 1987-02-23 1996-01-17 株式会社日立製作所 大規模半導体論理回路
US4797579A (en) * 1987-07-27 1989-01-10 Raytheon Company CMOS VLSI output driver with controlled rise and fall times
US4777389A (en) * 1987-08-13 1988-10-11 Advanced Micro Devices, Inc. Output buffer circuits for reducing ground bounce noise
JPH0744259B2 (ja) * 1987-10-30 1995-05-15 日本電気株式会社 半導体集積回路
JPH01289138A (ja) * 1988-05-16 1989-11-21 Toshiba Corp マスタースライス型半導体集積回路
US5068553A (en) * 1988-10-31 1991-11-26 Texas Instruments Incorporated Delay stage with reduced Vdd dependence
JPH02152254A (ja) * 1988-12-02 1990-06-12 Mitsubishi Electric Corp 半導体集積回路装置
US5010256A (en) * 1989-02-21 1991-04-23 United Technologies Corporation Gate output driver using slew-rate control
US4980580A (en) * 1989-03-27 1990-12-25 Microelectronics And Computer Technology Corporation CMOS interconnection circuit
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors
FR2653952A1 (fr) * 1989-10-31 1991-05-03 Thomson Composants Microondes Circuit integre logique prediffuse comportant au moins un amplificateur.
JPH03231455A (ja) * 1990-02-07 1991-10-15 Toshiba Corp 半導体集積回路
US5030853A (en) * 1990-03-21 1991-07-09 Thunderbird Technologies, Inc. High speed logic and memory family using ring segment buffer
US5105105A (en) * 1990-03-21 1992-04-14 Thunderbird Technologies, Inc. High speed logic and memory family using ring segment buffer
US5024993A (en) * 1990-05-02 1991-06-18 Microelectronics & Computer Technology Corporation Superconducting-semiconducting circuits, devices and systems
US5289021A (en) * 1990-05-15 1994-02-22 Siarc Basic cell architecture for mask programmable gate array with 3 or more size transistors
US5055716A (en) * 1990-05-15 1991-10-08 Siarc Basic cell for bicmos gate array
WO1992012575A1 (en) * 1991-01-12 1992-07-23 Tadashi Shibata Semiconductor device
US5296765A (en) * 1992-03-20 1994-03-22 Siliconix Incorporated Driver circuit for sinking current to two supply voltages
US5404056A (en) * 1992-04-28 1995-04-04 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device with independently operable output buffers
JP2759577B2 (ja) * 1992-05-14 1998-05-28 三菱電機株式会社 バッファ回路
US5345195A (en) * 1992-10-22 1994-09-06 United Memories, Inc. Low power Vcc and temperature independent oscillator
US5361006A (en) * 1993-03-19 1994-11-01 Gte Laboratories Incorporated Electrical circuitry with threshold control
US5406140A (en) * 1993-06-07 1995-04-11 National Semiconductor Corporation Voltage translation and overvoltage protection
US5355029A (en) * 1993-07-12 1994-10-11 Digital Equipment Corporation Staged CMOS output buffer
US5399923A (en) * 1993-07-26 1995-03-21 Texas Instruments Incorporated Field programmable gate array device with antifuse overcurrent protection
US5543736A (en) * 1993-12-10 1996-08-06 United Technologies Corporation Gate array architecture and layout for deep space applications
US5391943A (en) * 1994-01-10 1995-02-21 Mahant-Shetti; Shivaling S. Gate array cell with predefined connection patterns
US5600267A (en) * 1994-06-24 1997-02-04 Cypress Semiconductor Corporation Apparatus for a programmable CML to CMOS translator for power/speed adjustment
EP1045446A3 (de) * 1994-09-30 2000-11-15 Yozan Inc. MOS-Inverter mit einer verengten Kanalbreite
US5612636A (en) * 1995-01-19 1997-03-18 Texas Instruments Incorporated Short circuit power optimization for CMOS circuits
US5552721A (en) * 1995-06-05 1996-09-03 International Business Machines Corporation Method and system for enhanced drive in programmmable gate arrays
US5568062A (en) * 1995-07-14 1996-10-22 Kaplinsky; Cecil H. Low noise tri-state output buffer
US5723883A (en) * 1995-11-14 1998-03-03 In-Chip Gate array cell architecture and routing scheme
JP2806335B2 (ja) * 1996-01-17 1998-09-30 日本電気株式会社 論理回路及びこれを用いた半導体集積回路
US5880607A (en) * 1996-05-01 1999-03-09 Sun Microsystems, Inc. Clock distribution network with modular buffers
US6028444A (en) * 1996-06-21 2000-02-22 Quicklogic Corporation Three-statable net driver for antifuse field programmable gate array
US5825201A (en) * 1996-06-21 1998-10-20 Quicklogic Corporation Programming architecture for a programmable integrated circuit employing antifuses
US5892370A (en) * 1996-06-21 1999-04-06 Quicklogic Corporation Clock network for field programmable gate array
US5828538A (en) * 1996-06-21 1998-10-27 Quicklogic Corporation Power-up circuit for field programmable gate arrays
KR100219559B1 (ko) * 1996-10-09 1999-09-01 윤종용 신호라인 구동회로 및 이를 구비하는 반도체장치
JP2859234B2 (ja) * 1996-12-26 1999-02-17 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
US6169416B1 (en) 1998-09-01 2001-01-02 Quicklogic Corporation Programming architecture for field programmable gate array
JP2001053155A (ja) * 1999-06-04 2001-02-23 Seiko Epson Corp 半導体集積回路装置
US6552589B1 (en) * 1999-10-21 2003-04-22 International Business Machines Corporation Method and apparatus for process independent clock signal distribution
JP3813045B2 (ja) * 2000-02-29 2006-08-23 ローム株式会社 Hブリッジドライバ
JP2005514741A (ja) * 2002-01-08 2005-05-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高圧放電ランプ及びこのようなランプの電極フィードスルーの製造方法
US6707331B1 (en) 2002-07-19 2004-03-16 Xilinx, Inc. High speed one-shot circuit with optional correction for process shift
US6653873B1 (en) * 2002-07-19 2003-11-25 Xilinx, Inc. Large loading driver circuit with high speed and low crowbar current
US7057450B2 (en) * 2003-07-30 2006-06-06 Winbond Electronics Corp. Noise filter for an integrated circuit
JP4404756B2 (ja) * 2004-12-07 2010-01-27 Okiセミコンダクタ株式会社 半導体集積回路
JP4116001B2 (ja) * 2005-01-31 2008-07-09 シャープ株式会社 レベルシフタ回路及びそれを用いた表示素子駆動回路
JP4602231B2 (ja) 2005-11-08 2010-12-22 株式会社オートネットワーク技術研究所 発音制御装置
US8643418B2 (en) * 2011-06-02 2014-02-04 Micron Technology, Inc. Apparatus and methods for altering the timing of a clock signal
US8580635B2 (en) * 2011-12-05 2013-11-12 International Business Machines Corporation Method of replacing silicon with metal in integrated circuit chip fabrication
US10033359B2 (en) * 2015-10-23 2018-07-24 Qualcomm Incorporated Area efficient flip-flop with improved scan hold-margin
US9966953B2 (en) 2016-06-02 2018-05-08 Qualcomm Incorporated Low clock power data-gated flip-flop
TWI710123B (zh) * 2019-11-27 2020-11-11 恆勁科技股份有限公司 感測裝置之封裝結構以及其製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378783A (en) * 1965-12-13 1968-04-16 Rca Corp Optimized digital amplifier utilizing insulated-gate field-effect transistors
US3983619A (en) * 1968-01-26 1976-10-05 Hitachi, Ltd. Large scale integrated circuit array of unit cells and method of manufacturing same
JPS60953B2 (ja) * 1977-12-30 1985-01-11 富士通株式会社 半導体集積回路装置
US4272830A (en) * 1978-12-22 1981-06-09 Motorola, Inc. ROM Storage location having more than two states
US4311925A (en) * 1979-09-17 1982-01-19 International Business Machines Corporation Current switch emitter follower latch having output signals with reduced noise
JPS6041364B2 (ja) * 1980-08-29 1985-09-17 富士通株式会社 出力バッファ回路
US4394588A (en) * 1980-12-30 1983-07-19 International Business Machines Corporation Controllable di/dt push/pull driver
JPS57148363A (en) * 1981-03-11 1982-09-13 Toshiba Corp Gate array
JPS5851536A (ja) * 1981-09-24 1983-03-26 Ricoh Co Ltd マスタスライスチツプ
US4430583A (en) * 1981-10-30 1984-02-07 Bell Telephone Laboratories, Incorporated Apparatus for increasing the speed of a circuit having a string of IGFETs
JPS58190036A (ja) * 1982-04-23 1983-11-05 Fujitsu Ltd ゲ−ト・アレイ大規模集積回路装置
US4504959A (en) * 1983-02-25 1985-03-12 Johnson Service Company Noise-neutralizing digital interface circuit
JPS59159961U (ja) * 1983-04-13 1984-10-26 株式会社日立製作所 半導体回路装置
JPS6017932A (ja) * 1983-07-09 1985-01-29 Fujitsu Ltd ゲ−ト・アレイ
JPS6027145A (ja) * 1983-07-25 1985-02-12 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
IE56987B1 (en) 1992-02-26
EP0147998A3 (en) 1987-01-14
EP0147998A2 (de) 1985-07-10
IE843335L (en) 1985-06-23
US5132563A (en) 1992-07-21
JPS60136238A (ja) 1985-07-19
EP0147998B1 (de) 1990-07-11
KR850005059A (ko) 1985-08-19
JP2564787B2 (ja) 1996-12-18
US4727266A (en) 1988-02-23
KR900006786B1 (ko) 1990-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee