DE3482694D1 - Ausgangsschaltung einer integrierten halbleiterschaltung. - Google Patents
Ausgangsschaltung einer integrierten halbleiterschaltung.Info
- Publication number
- DE3482694D1 DE3482694D1 DE8484308891T DE3482694T DE3482694D1 DE 3482694 D1 DE3482694 D1 DE 3482694D1 DE 8484308891 T DE8484308891 T DE 8484308891T DE 3482694 T DE3482694 T DE 3482694T DE 3482694 D1 DE3482694 D1 DE 3482694D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- integrated semiconductor
- output circuit
- output
- semiconductor circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58243432A JP2564787B2 (ja) | 1983-12-23 | 1983-12-23 | ゲートアレー大規模集積回路装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3482694D1 true DE3482694D1 (de) | 1990-08-16 |
Family
ID=17103781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484308891T Expired - Fee Related DE3482694D1 (de) | 1983-12-23 | 1984-12-19 | Ausgangsschaltung einer integrierten halbleiterschaltung. |
Country Status (6)
Country | Link |
---|---|
US (2) | US4727266A (de) |
EP (1) | EP0147998B1 (de) |
JP (1) | JP2564787B2 (de) |
KR (1) | KR900006786B1 (de) |
DE (1) | DE3482694D1 (de) |
IE (1) | IE56987B1 (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6346748A (ja) * | 1986-08-15 | 1988-02-27 | Nec Corp | 論理回路 |
JP2557411B2 (ja) * | 1986-10-01 | 1996-11-27 | 株式会社東芝 | 半導体集積回路 |
JPH083773B2 (ja) * | 1987-02-23 | 1996-01-17 | 株式会社日立製作所 | 大規模半導体論理回路 |
US4797579A (en) * | 1987-07-27 | 1989-01-10 | Raytheon Company | CMOS VLSI output driver with controlled rise and fall times |
US4777389A (en) * | 1987-08-13 | 1988-10-11 | Advanced Micro Devices, Inc. | Output buffer circuits for reducing ground bounce noise |
JPH0744259B2 (ja) * | 1987-10-30 | 1995-05-15 | 日本電気株式会社 | 半導体集積回路 |
JPH01289138A (ja) * | 1988-05-16 | 1989-11-21 | Toshiba Corp | マスタースライス型半導体集積回路 |
US5068553A (en) * | 1988-10-31 | 1991-11-26 | Texas Instruments Incorporated | Delay stage with reduced Vdd dependence |
JPH02152254A (ja) * | 1988-12-02 | 1990-06-12 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US5010256A (en) * | 1989-02-21 | 1991-04-23 | United Technologies Corporation | Gate output driver using slew-rate control |
US4980580A (en) * | 1989-03-27 | 1990-12-25 | Microelectronics And Computer Technology Corporation | CMOS interconnection circuit |
US5594372A (en) * | 1989-06-02 | 1997-01-14 | Shibata; Tadashi | Source follower using NMOS and PMOS transistors |
FR2653952A1 (fr) * | 1989-10-31 | 1991-05-03 | Thomson Composants Microondes | Circuit integre logique prediffuse comportant au moins un amplificateur. |
JPH03231455A (ja) * | 1990-02-07 | 1991-10-15 | Toshiba Corp | 半導体集積回路 |
US5030853A (en) * | 1990-03-21 | 1991-07-09 | Thunderbird Technologies, Inc. | High speed logic and memory family using ring segment buffer |
US5105105A (en) * | 1990-03-21 | 1992-04-14 | Thunderbird Technologies, Inc. | High speed logic and memory family using ring segment buffer |
US5024993A (en) * | 1990-05-02 | 1991-06-18 | Microelectronics & Computer Technology Corporation | Superconducting-semiconducting circuits, devices and systems |
US5289021A (en) * | 1990-05-15 | 1994-02-22 | Siarc | Basic cell architecture for mask programmable gate array with 3 or more size transistors |
US5055716A (en) * | 1990-05-15 | 1991-10-08 | Siarc | Basic cell for bicmos gate array |
WO1992012575A1 (en) * | 1991-01-12 | 1992-07-23 | Tadashi Shibata | Semiconductor device |
US5296765A (en) * | 1992-03-20 | 1994-03-22 | Siliconix Incorporated | Driver circuit for sinking current to two supply voltages |
US5404056A (en) * | 1992-04-28 | 1995-04-04 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device with independently operable output buffers |
JP2759577B2 (ja) * | 1992-05-14 | 1998-05-28 | 三菱電機株式会社 | バッファ回路 |
US5345195A (en) * | 1992-10-22 | 1994-09-06 | United Memories, Inc. | Low power Vcc and temperature independent oscillator |
US5361006A (en) * | 1993-03-19 | 1994-11-01 | Gte Laboratories Incorporated | Electrical circuitry with threshold control |
US5406140A (en) * | 1993-06-07 | 1995-04-11 | National Semiconductor Corporation | Voltage translation and overvoltage protection |
US5355029A (en) * | 1993-07-12 | 1994-10-11 | Digital Equipment Corporation | Staged CMOS output buffer |
US5399923A (en) * | 1993-07-26 | 1995-03-21 | Texas Instruments Incorporated | Field programmable gate array device with antifuse overcurrent protection |
US5543736A (en) * | 1993-12-10 | 1996-08-06 | United Technologies Corporation | Gate array architecture and layout for deep space applications |
US5391943A (en) * | 1994-01-10 | 1995-02-21 | Mahant-Shetti; Shivaling S. | Gate array cell with predefined connection patterns |
US5600267A (en) * | 1994-06-24 | 1997-02-04 | Cypress Semiconductor Corporation | Apparatus for a programmable CML to CMOS translator for power/speed adjustment |
EP1045446A3 (de) * | 1994-09-30 | 2000-11-15 | Yozan Inc. | MOS-Inverter mit einer verengten Kanalbreite |
US5612636A (en) * | 1995-01-19 | 1997-03-18 | Texas Instruments Incorporated | Short circuit power optimization for CMOS circuits |
US5552721A (en) * | 1995-06-05 | 1996-09-03 | International Business Machines Corporation | Method and system for enhanced drive in programmmable gate arrays |
US5568062A (en) * | 1995-07-14 | 1996-10-22 | Kaplinsky; Cecil H. | Low noise tri-state output buffer |
US5723883A (en) * | 1995-11-14 | 1998-03-03 | In-Chip | Gate array cell architecture and routing scheme |
JP2806335B2 (ja) * | 1996-01-17 | 1998-09-30 | 日本電気株式会社 | 論理回路及びこれを用いた半導体集積回路 |
US5880607A (en) * | 1996-05-01 | 1999-03-09 | Sun Microsystems, Inc. | Clock distribution network with modular buffers |
US6028444A (en) * | 1996-06-21 | 2000-02-22 | Quicklogic Corporation | Three-statable net driver for antifuse field programmable gate array |
US5825201A (en) * | 1996-06-21 | 1998-10-20 | Quicklogic Corporation | Programming architecture for a programmable integrated circuit employing antifuses |
US5892370A (en) * | 1996-06-21 | 1999-04-06 | Quicklogic Corporation | Clock network for field programmable gate array |
US5828538A (en) * | 1996-06-21 | 1998-10-27 | Quicklogic Corporation | Power-up circuit for field programmable gate arrays |
KR100219559B1 (ko) * | 1996-10-09 | 1999-09-01 | 윤종용 | 신호라인 구동회로 및 이를 구비하는 반도체장치 |
JP2859234B2 (ja) * | 1996-12-26 | 1999-02-17 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
US6169416B1 (en) | 1998-09-01 | 2001-01-02 | Quicklogic Corporation | Programming architecture for field programmable gate array |
JP2001053155A (ja) * | 1999-06-04 | 2001-02-23 | Seiko Epson Corp | 半導体集積回路装置 |
US6552589B1 (en) * | 1999-10-21 | 2003-04-22 | International Business Machines Corporation | Method and apparatus for process independent clock signal distribution |
JP3813045B2 (ja) * | 2000-02-29 | 2006-08-23 | ローム株式会社 | Hブリッジドライバ |
JP2005514741A (ja) * | 2002-01-08 | 2005-05-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 高圧放電ランプ及びこのようなランプの電極フィードスルーの製造方法 |
US6707331B1 (en) | 2002-07-19 | 2004-03-16 | Xilinx, Inc. | High speed one-shot circuit with optional correction for process shift |
US6653873B1 (en) * | 2002-07-19 | 2003-11-25 | Xilinx, Inc. | Large loading driver circuit with high speed and low crowbar current |
US7057450B2 (en) * | 2003-07-30 | 2006-06-06 | Winbond Electronics Corp. | Noise filter for an integrated circuit |
JP4404756B2 (ja) * | 2004-12-07 | 2010-01-27 | Okiセミコンダクタ株式会社 | 半導体集積回路 |
JP4116001B2 (ja) * | 2005-01-31 | 2008-07-09 | シャープ株式会社 | レベルシフタ回路及びそれを用いた表示素子駆動回路 |
JP4602231B2 (ja) | 2005-11-08 | 2010-12-22 | 株式会社オートネットワーク技術研究所 | 発音制御装置 |
US8643418B2 (en) * | 2011-06-02 | 2014-02-04 | Micron Technology, Inc. | Apparatus and methods for altering the timing of a clock signal |
US8580635B2 (en) * | 2011-12-05 | 2013-11-12 | International Business Machines Corporation | Method of replacing silicon with metal in integrated circuit chip fabrication |
US10033359B2 (en) * | 2015-10-23 | 2018-07-24 | Qualcomm Incorporated | Area efficient flip-flop with improved scan hold-margin |
US9966953B2 (en) | 2016-06-02 | 2018-05-08 | Qualcomm Incorporated | Low clock power data-gated flip-flop |
TWI710123B (zh) * | 2019-11-27 | 2020-11-11 | 恆勁科技股份有限公司 | 感測裝置之封裝結構以及其製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3378783A (en) * | 1965-12-13 | 1968-04-16 | Rca Corp | Optimized digital amplifier utilizing insulated-gate field-effect transistors |
US3983619A (en) * | 1968-01-26 | 1976-10-05 | Hitachi, Ltd. | Large scale integrated circuit array of unit cells and method of manufacturing same |
JPS60953B2 (ja) * | 1977-12-30 | 1985-01-11 | 富士通株式会社 | 半導体集積回路装置 |
US4272830A (en) * | 1978-12-22 | 1981-06-09 | Motorola, Inc. | ROM Storage location having more than two states |
US4311925A (en) * | 1979-09-17 | 1982-01-19 | International Business Machines Corporation | Current switch emitter follower latch having output signals with reduced noise |
JPS6041364B2 (ja) * | 1980-08-29 | 1985-09-17 | 富士通株式会社 | 出力バッファ回路 |
US4394588A (en) * | 1980-12-30 | 1983-07-19 | International Business Machines Corporation | Controllable di/dt push/pull driver |
JPS57148363A (en) * | 1981-03-11 | 1982-09-13 | Toshiba Corp | Gate array |
JPS5851536A (ja) * | 1981-09-24 | 1983-03-26 | Ricoh Co Ltd | マスタスライスチツプ |
US4430583A (en) * | 1981-10-30 | 1984-02-07 | Bell Telephone Laboratories, Incorporated | Apparatus for increasing the speed of a circuit having a string of IGFETs |
JPS58190036A (ja) * | 1982-04-23 | 1983-11-05 | Fujitsu Ltd | ゲ−ト・アレイ大規模集積回路装置 |
US4504959A (en) * | 1983-02-25 | 1985-03-12 | Johnson Service Company | Noise-neutralizing digital interface circuit |
JPS59159961U (ja) * | 1983-04-13 | 1984-10-26 | 株式会社日立製作所 | 半導体回路装置 |
JPS6017932A (ja) * | 1983-07-09 | 1985-01-29 | Fujitsu Ltd | ゲ−ト・アレイ |
JPS6027145A (ja) * | 1983-07-25 | 1985-02-12 | Hitachi Ltd | 半導体集積回路装置 |
-
1983
- 1983-12-23 JP JP58243432A patent/JP2564787B2/ja not_active Expired - Lifetime
-
1984
- 1984-12-19 KR KR1019840008112A patent/KR900006786B1/ko not_active IP Right Cessation
- 1984-12-19 EP EP84308891A patent/EP0147998B1/de not_active Expired - Lifetime
- 1984-12-19 DE DE8484308891T patent/DE3482694D1/de not_active Expired - Fee Related
- 1984-12-21 IE IE3335/84A patent/IE56987B1/en not_active IP Right Cessation
-
1987
- 1987-02-24 US US07/018,846 patent/US4727266A/en not_active Expired - Lifetime
-
1991
- 1991-08-14 US US07/746,158 patent/US5132563A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
IE56987B1 (en) | 1992-02-26 |
EP0147998A3 (en) | 1987-01-14 |
EP0147998A2 (de) | 1985-07-10 |
IE843335L (en) | 1985-06-23 |
US5132563A (en) | 1992-07-21 |
JPS60136238A (ja) | 1985-07-19 |
EP0147998B1 (de) | 1990-07-11 |
KR850005059A (ko) | 1985-08-19 |
JP2564787B2 (ja) | 1996-12-18 |
US4727266A (en) | 1988-02-23 |
KR900006786B1 (ko) | 1990-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |