DE3366468D1 - Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process - Google Patents

Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process

Info

Publication number
DE3366468D1
DE3366468D1 DE8383201243T DE3366468T DE3366468D1 DE 3366468 D1 DE3366468 D1 DE 3366468D1 DE 8383201243 T DE8383201243 T DE 8383201243T DE 3366468 T DE3366468 T DE 3366468T DE 3366468 D1 DE3366468 D1 DE 3366468D1
Authority
DE
Germany
Prior art keywords
making
transistors
self
small dimensions
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383201243T
Other languages
English (en)
Inventor
Didier Serge Meignant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3366468D1 publication Critical patent/DE3366468D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
DE8383201243T 1982-09-01 1983-08-31 Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process Expired DE3366468D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8214944A FR2532471A1 (fr) 1982-09-01 1982-09-01 Procede de realisation d'ouverture de faible dimension, utilisation de ce procede pour la fabrication de transistors a effet de champ, a grille alignee submicronique, et transistors ainsi obtenus

Publications (1)

Publication Number Publication Date
DE3366468D1 true DE3366468D1 (en) 1986-10-30

Family

ID=9277171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383201243T Expired DE3366468D1 (en) 1982-09-01 1983-08-31 Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process

Country Status (5)

Country Link
US (1) US4517730A (de)
EP (1) EP0104686B1 (de)
JP (1) JPH0644577B2 (de)
DE (1) DE3366468D1 (de)
FR (1) FR2532471A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652793B2 (ja) * 1984-10-29 1994-07-06 新技術事業団 静電誘導トランジスタの製造方法
US4774555A (en) * 1987-08-07 1988-09-27 Siemens Corporate Research And Support, Inc. Power hemt structure
JPH023938A (ja) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp 電界効果トランジスタ
US5112763A (en) * 1988-11-01 1992-05-12 Hewlett-Packard Company Process for forming a Schottky barrier gate
DE4202652C2 (de) * 1992-01-30 1996-03-28 Fraunhofer Ges Forschung Verfahren zum Aufbringen einer UV- und/oder elektronenstrahlempfindlichen Lackschicht
KR970000538B1 (ko) * 1993-04-27 1997-01-13 엘지전자 주식회사 게이트 리세스 구조를 갖는 전계효과트랜지스터의 제조방법
US6514805B2 (en) * 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
US6898941B2 (en) * 2003-06-16 2005-05-31 Carrier Corporation Supercritical pressure regulation of vapor compression system by regulation of expansion machine flowrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898353A (en) * 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor
US4077111A (en) * 1976-07-14 1978-03-07 Westinghouse Electric Corporation Self-aligned gate field effect transistor and method for making same
JPS5364481A (en) * 1976-11-20 1978-06-08 Sony Corp Production of schottky type field effect transistor
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
JPS54146974A (en) * 1978-05-10 1979-11-16 Toshiba Corp Production of schottky field effect transistor
US4194285A (en) * 1978-06-15 1980-03-25 Rca Corporation Method of making a field effect transistor
JPS5591833A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Method of forming submicron pattern
JPS55163860A (en) * 1979-06-06 1980-12-20 Toshiba Corp Manufacture of semiconductor device
JPS5764975A (en) * 1980-10-07 1982-04-20 Mitsubishi Electric Corp Constructing method of narrow line
FR2496982A1 (fr) * 1980-12-24 1982-06-25 Labo Electronique Physique Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus
ZA818633B (en) * 1980-12-30 1983-06-29 Max Factor & Co Combination cosmetic container and support arrangement and method of assembly
US4414738A (en) * 1981-02-02 1983-11-15 The United States Of America As Represented By The Secretary Of The Navy Optical lithographic technique for fabricating submicron-sized Josephson microbridges

Also Published As

Publication number Publication date
JPS5961074A (ja) 1984-04-07
US4517730A (en) 1985-05-21
EP0104686A1 (de) 1984-04-04
FR2532471A1 (fr) 1984-03-02
FR2532471B1 (de) 1984-12-07
JPH0644577B2 (ja) 1994-06-08
EP0104686B1 (de) 1986-09-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee