DE219243T1 - Verfahren zur herstellung eines bipolaren transistors. - Google Patents
Verfahren zur herstellung eines bipolaren transistors.Info
- Publication number
- DE219243T1 DE219243T1 DE1986307308 DE86307308T DE219243T1 DE 219243 T1 DE219243 T1 DE 219243T1 DE 1986307308 DE1986307308 DE 1986307308 DE 86307308 T DE86307308 T DE 86307308T DE 219243 T1 DE219243 T1 DE 219243T1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- bipolar transistor
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78690685A | 1985-10-11 | 1985-10-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE219243T1 true DE219243T1 (de) | 1987-09-24 |
Family
ID=25139910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1986307308 Pending DE219243T1 (de) | 1985-10-11 | 1986-09-23 | Verfahren zur herstellung eines bipolaren transistors. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0219243A2 (de) |
JP (1) | JPS6289357A (de) |
DE (1) | DE219243T1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0964355A (ja) * | 1995-08-25 | 1997-03-07 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
BRPI0108380B8 (pt) | 2000-02-08 | 2021-05-25 | Euro Celtique S/A | fórmulas de opióides agonistas resistentes à adulteração, método para diminuir o abuso de um opióide agonista numa fórmula de dosagem oral, método de preparação de uma fórmula de dosagem oral e método de tratamento da dor |
CN100359652C (zh) | 2002-06-26 | 2008-01-02 | 山米奎普公司 | 一种制造一半导体器件的方法 |
EP1808885A1 (de) * | 2002-06-26 | 2007-07-18 | Semequip, Inc. | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
DE102004013478B4 (de) * | 2004-03-18 | 2010-04-01 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Bipolartransistors mit verbessertem Basisanschluss |
KR101455564B1 (ko) | 2005-12-09 | 2014-10-27 | 세미이큅, 인코포레이티드 | 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를 위한 시스템 및 방법 |
US7919402B2 (en) | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
-
1986
- 1986-09-23 DE DE1986307308 patent/DE219243T1/de active Pending
- 1986-09-23 EP EP86307308A patent/EP0219243A2/de not_active Withdrawn
- 1986-10-11 JP JP24190586A patent/JPS6289357A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0219243A2 (de) | 1987-04-22 |
JPS6289357A (ja) | 1987-04-23 |
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