DE112020001697A5 - Optoelektronisches halbleiterbauelement mit dielektrischer schicht und transparenter leitfähiger schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements - Google Patents
Optoelektronisches halbleiterbauelement mit dielektrischer schicht und transparenter leitfähiger schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements Download PDFInfo
- Publication number
- DE112020001697A5 DE112020001697A5 DE112020001697.8T DE112020001697T DE112020001697A5 DE 112020001697 A5 DE112020001697 A5 DE 112020001697A5 DE 112020001697 T DE112020001697 T DE 112020001697T DE 112020001697 A5 DE112020001697 A5 DE 112020001697A5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- optoelectronic semiconductor
- manufacturing
- transparent conductive
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102019108216.1A DE102019108216A1 (de) | 2019-03-29 | 2019-03-29 | Optoelektronisches Halbleiterbauelement mit dielektrischer Schicht und transparenter leitfähiger Schicht und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
DE102019108216.1 | 2019-03-29 | ||
PCT/EP2020/057988 WO2020200881A1 (de) | 2019-03-29 | 2020-03-23 | Optoelektronisches halbleiterbauelement mit dielektrischer schicht und transparenter leitfähiger schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112020001697A5 true DE112020001697A5 (de) | 2021-12-23 |
Family
ID=69960638
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102019108216.1A Withdrawn DE102019108216A1 (de) | 2019-03-29 | 2019-03-29 | Optoelektronisches Halbleiterbauelement mit dielektrischer Schicht und transparenter leitfähiger Schicht und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
DE112020001697.8T Pending DE112020001697A5 (de) | 2019-03-29 | 2020-03-23 | Optoelektronisches halbleiterbauelement mit dielektrischer schicht und transparenter leitfähiger schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102019108216.1A Withdrawn DE102019108216A1 (de) | 2019-03-29 | 2019-03-29 | Optoelektronisches Halbleiterbauelement mit dielektrischer Schicht und transparenter leitfähiger Schicht und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220190222A1 (de) |
DE (2) | DE102019108216A1 (de) |
WO (1) | WO2020200881A1 (de) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508902B2 (en) * | 2005-02-21 | 2016-11-29 | Epistar Corporation | Optoelectronic semiconductor device |
TWI344709B (en) * | 2007-06-14 | 2011-07-01 | Epistar Corp | Light emitting device |
JP2010171376A (ja) * | 2008-12-26 | 2010-08-05 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US8987772B2 (en) * | 2010-11-18 | 2015-03-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having electrode pad |
US8686429B2 (en) * | 2011-06-24 | 2014-04-01 | Cree, Inc. | LED structure with enhanced mirror reflectivity |
WO2013077619A1 (ko) * | 2011-11-21 | 2013-05-30 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조 방법 |
JP5776535B2 (ja) * | 2011-12-16 | 2015-09-09 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
DE102012217533A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
TWI635772B (zh) * | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
US9608168B2 (en) * | 2014-06-13 | 2017-03-28 | Seoul Viosys Co., Ltd. | Light emitting diode |
JP2016149462A (ja) * | 2015-02-12 | 2016-08-18 | 豊田合成株式会社 | 発光素子およびその製造方法 |
KR102554231B1 (ko) * | 2016-06-16 | 2023-07-12 | 서울바이오시스 주식회사 | 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지 |
-
2019
- 2019-03-29 DE DE102019108216.1A patent/DE102019108216A1/de not_active Withdrawn
-
2020
- 2020-03-23 US US17/442,648 patent/US20220190222A1/en active Pending
- 2020-03-23 WO PCT/EP2020/057988 patent/WO2020200881A1/de active Application Filing
- 2020-03-23 DE DE112020001697.8T patent/DE112020001697A5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220190222A1 (en) | 2022-06-16 |
WO2020200881A1 (de) | 2020-10-08 |
DE102019108216A1 (de) | 2020-10-01 |
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