TWI635772B - 發光元件 - Google Patents
發光元件 Download PDFInfo
- Publication number
- TWI635772B TWI635772B TW102137244A TW102137244A TWI635772B TW I635772 B TWI635772 B TW I635772B TW 102137244 A TW102137244 A TW 102137244A TW 102137244 A TW102137244 A TW 102137244A TW I635772 B TWI635772 B TW I635772B
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- Taiwan
- Prior art keywords
- light
- layer
- insulating layer
- transparent insulating
- electrode
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- 239000000463 material Substances 0.000 claims description 26
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 6
- 230000035515 penetration Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 10
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 3
- -1 arsenic Aluminum Chemical compound 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QTPKWWJYDWYXOT-UHFFFAOYSA-N [W+4].[O-2].[In+3] Chemical compound [W+4].[O-2].[In+3] QTPKWWJYDWYXOT-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000011153 ceramic matrix composite Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- LYYBDUVEZRFROU-UHFFFAOYSA-N [W].[In] Chemical compound [W].[In] LYYBDUVEZRFROU-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
本發明揭露一發光元件,包含:一發光疊層,至少包含一活性層;一透明絕緣層位於發光疊層之上,透明絕緣層具有一邊緣;及一電極區,係包含一第一電極位於透明絕緣層之上,且第一電極具有一邊緣;其中第一電極遠離透明絕緣層的表面之表面積小於透明絕緣層遠離發光疊層之表面的表面積,且透明絕緣層之折射率係介於1至3.4之間,穿透率(T%)係大於80%。
Description
本發明揭露一發光元件及其製造方法,特別是關於一具有一透明絕緣層之發光元件。
發光二極體(light-emitting diode,LED)的發光原理是利用電子在n型半導體與p型半導體間移動的能量差,以光的形式將能量釋放,這樣的發光原理係有別於白熾燈發熱的發光原理,因此發光二極體被稱為冷光源。此外,發光二極體具有高耐久性、壽命長、輕巧、耗電量低等優點,因此現今的照明市場對於發光二極體寄予厚望,將其視為新一代的照明工具,已逐漸取代傳統光源,並且應用於各種領域,如交通號誌、背光模組、路燈照明、醫療設備等。
第1A圖係習知之發光元件結構示意圖。如第1A圖所示,習知之發光元件100包含有一透明基板11、一位於透明基板11上之半導體疊層12,以及至少一電極14位於上述半導體疊層12上,其中上述之半導體疊層12由上而下至少包含一第一導電型半導體層120、一活性層122,以及一第二導電型半導體層124。
此外,上述之發光元件100更可以進一步地與其他元件組合連接以形成一發光裝置(light-emitting apparatus)。第1B圖為習知之發光裝置結構示意圖,如第1B圖所示,一發光裝置200包含一具有至少一電路150之次載體(sub-mount)15;至少一焊料(solder)13位於上述次載體15上,藉由此焊料13將上述發光元件100黏結固定於次載體15上並使發光元件100之基板11與次載體15上之電路150形成電連接;一電性連接結構16,以電性連接發光元件100之電極14與次載體15上之電路150;其中,上述之次載體15可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate),以方便發光裝置200之電路規劃並提高其散熱效果。
本發明提供一發光元件,包含:一發光疊層,至少包含一活性層;一透明絕緣層位於發光疊層之上,透明絕緣層具有一邊緣;及一電極區,係包含一第一電極位於透明絕緣層之上,且第一電極具有一邊緣;其中第一電極遠離透明絕緣層的表面之表面積小於透明絕緣層遠離發光疊層之表面的表面積,且透明絕緣層之折射率係介於1至3.4之間,穿透率(T%)係大於80%。
1‧‧‧發光元件
2‧‧‧燈泡
11‧‧‧透明基板
12‧‧‧半導體疊層
13‧‧‧焊料
14‧‧‧電極
15‧‧‧次載體
16‧‧‧電性連接結構
20‧‧‧基板
21‧‧‧黏結層
22‧‧‧反射層
23‧‧‧透明導電層
24‧‧‧絕緣層
25‧‧‧發光疊層
26‧‧‧電接觸層
27‧‧‧電極區
28‧‧‧透明絕緣層
30‧‧‧第二電極
41‧‧‧燈罩
42‧‧‧透鏡
43‧‧‧載板
44‧‧‧發光模組
45‧‧‧燈座
46‧‧‧散熱鰭片
47‧‧‧結合部
48‧‧‧電連接器
100‧‧‧發光元件
120‧‧‧第一導電型半導體層
122‧‧‧活性層
124‧‧‧第二導電型半導體層
150‧‧‧電路
200‧‧‧發光裝置
251‧‧‧窗戶層
252‧‧‧第一導電型半導體層
253‧‧‧活性層
254‧‧‧第二導電型半導體層
271‧‧‧第一電極
272‧‧‧延伸電極
281‧‧‧邊緣
2711‧‧‧邊緣
2721‧‧‧第一支線
2722‧‧‧第二支線
C‧‧‧中心
第1A圖為習知之發光元件結構示意圖,第1B圖為習知之發光裝置結構示意圖。
第2A為本發明第一實施例之發光元件之上視圖,第2B圖為第2A圖沿剖面線AA’之剖面圖。
第3圖為本發明第二實施例之燈泡分解示意圖。
為了使本發明之敘述更加詳盡與完備,請參照下列描述並配合第2-3圖之圖式。
第2A圖為本發明第一實施例之發光元件上視圖,第2B圖為第2A圖沿剖面線AA’之剖面圖。如第2B圖所示,一發光元件1具有一基板20;一黏結層21,位於基板20之上;一反射層22,位於黏結層21之上;一透明導電層23,位於反射層22之上;一發光疊層25,位於透明導電層23之上;一絕緣層24,位於透明導電層23與發光疊層25之間;一電接觸層26,位於發光疊層25之上;一透明絕緣層28位於發光疊層25之上且接觸電接觸層26;一電極區27位於透明絕緣層28以及電接觸層26之上且包含一第一電極271和一延伸電極272,其中第一電極271位於透明絕緣層28之上且延伸電極272位於電接觸層26之上,其中第一電極271遠離透明絕緣層28的表面之表面積小於透明絕緣層28遠離發光疊層25之表面的表面積,透明絕緣層之折射率係介於1至3.4之間且穿透率(T%)係大於80%;以及一第二電極30,位於基板20之下。發光疊層25具有一窗戶層251,位於透明導電層23與電極區27之間;一第一導電型半導體層252,位於窗戶層251與電極
區27之間;一活性層253,位於第一導電型半導體層252與電極區27之間;以及一第二導電型半導體層254,位於活性層253與電極區27之間,其中第二導電型半導體層254裸露且未與電接觸層26、延伸電極272以及透明絕緣層28接觸的表面係為粗化的表面。
電極區27及/或第二電極30用以接受外部電壓,可由透明導電材料或金屬材料所構成。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(GaAsP)、氧化銦鋅(IZO)或類鑽碳薄膜(DLC)。金屬材料包含但不限於鋁(Al)、鉻(Cr)、銅(Cu)、錫(Sn)、金(Au)、鎳(Ni)、鈦(Ti)、鉑(Pt)、鉛(Pb)、鋅(Zn)、鎘(Cd)、銻(Sb)、鈷(Co)或上述材料之合金等。如第2A圖所示,第一電極271大致位於第二導電型半導體層254之中心區域之上,延伸電極272具有一第一支線2721以及一第二支線2722,第一支線2721自第一電極271向發光元件1之邊界延伸,第二支線2722的兩端分別自第一支線2721之兩側向遠離第一支線之方向延伸,延伸方向大致與其最接近的發光元件1之邊界平行。如第2B圖所示,延伸電極272位於電接觸層26之上,且包覆電接觸層26至少一表面。
電接觸層26位於延伸電極272與發光疊層25之間,以形成延伸電極272與發光疊層25之間的歐姆接觸。電接觸層26
之電性與第二導電型半導體層254相同,其材料可為半導體材料,包含一種以上之元素,此元素可選自(Ga)、鋁(Al)、銦(In)、砷(As)、磷(P)、氮(N)以及矽(Si)所構成之群組。
透明絕緣層28位於第一電極271與發光疊層25之間,於此實施例中,部分透明絕緣層28覆蓋部分電接觸層26使第一電極271遠離基板的表面較平整,以避免當透明絕緣層28未覆蓋電接觸層26時,其銜接處之高度差導致第一電極271遠離基板的表面產生凹陷。透明絕緣層28之折射率係介於1至3.4之間,更佳的,透明絕緣層28之折射率係介於1.6至3.4之間,又更佳的,透明絕緣層28之折射率係介於2至3.4之間。透明絕緣層28對於發光疊層25所發出之光的波長有大於80%之穿透率(T%),較佳的,穿透率(T%)係大於90%,又更佳的,穿透率(T%)係大於95%。於此實施例中,穿透率(T%)係大於98%。如第2A圖所示,透明絕緣層28具有一邊緣281,透明絕緣層28的邊緣281遠離第二導電型半導體層254之中心C,第一電極271具有一邊緣2711,第一電極271的邊緣2711遠離第二導電型半導體層254之中心C,透明絕緣層28的部分邊緣281係凸出於第一電極271之邊緣2711。此外,電極271遠離透明絕緣層28的表面之表面積小於透明絕緣層28遠離發光疊層25之表面的表面積,因此可提高發光元件1之出光效率且可提高發光元件1之軸向亮度。較佳的,透明絕緣層28之表面積係介於活性層253之表面積的5%至97%之間。於此實施例中,透明絕緣層28之表面積係為活性層253之表面積的7.7%。
透明絕緣層28包含氧化物材料,其中氧化物材料例如但不限於包含氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、磷化鎵(GaP)、氧化銦鈰(ICO)、氧化銦鎢(IWO)、氧化銦鈦(ITiO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化鎵鋁鋅(GAZO)或上述材料之組合。於本實施例中,透明絕緣層28係為氧化鋁鋅(AZO),且在發光疊層25之上形成透明絕緣層28的過程中係通入氧氣,藉由調整氧氣通入量調變氧化鋁鋅(AZO)薄膜之薄膜電阻值以及穿透率,使其具有大於80%之穿透率而具有較低的電子傳導能力。較佳的,透明絕緣層28之厚度不小於800埃(Å)時,透明絕緣層28之薄膜電阻係大於10Ω/□(Ohm/Sq),又更佳的,係大於103Ω/□。於本實施例中,透明絕緣層28之薄膜電阻係大於106Ω/□。透明絕緣層28之厚度係例如但不限於不小於800埃(Å)。於本實施例中,透明絕緣層28之厚度係為0.5微米(μm)。
發光疊層25之材料可為半導體材料,包含一種以上之元素,此元素可選自鎵(Ga)、鋁(Al)、銦(In)、砷(As)、磷(P)、氮(N)以及矽(Si)所構成之群組。常用之材料係如磷化鋁鎵銦(AlGaInP)系列、氮化鋁鎵銦(AlGaInN)系列等III族氮化物、氧化鋅(ZnO)系列等。上述第一導電型半導體層252與第二導電型半導體層254係電性、極性或摻雜物相異,分別用以提供電子與電洞之半導體材料單層或多層結構(「多層」係指二層或二層以上,
以下同)。其電性選擇可以為p型、n型、及i型中之任意二者之組合。活性層253係位於上述二個部分之電性、極性或摻雜物相異、或者係分別用以提供電子與電洞之半導體材料之間,為電能與光能可能發生轉換或被誘發轉換之區域。活性層253之結構係如:單異質結構(single heterostructure;SH)、雙異質結構(double heterostructure;DH)、雙側雙異質結構(double-side double heterostructure;DDH)、或多層量子井(multi-quantum well;MQW)。再者,調整量子井之對數亦可改變發光波長。
窗戶層251對於活性層253所發之光為透明,其材料可為透明導電材料,包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、氧化鎂(MgO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)或氧化銦鋅(IZO)。
透明導電層23之材料對於發光疊層25所發之光為透明,可增加窗戶層251與反射層22之間的歐姆接觸以及電流傳導與擴散,並與反射層22形成全方向反射鏡(Omni-Directional Reflector,ODR)。其材料可為透明導電材料,包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、磷化鎵(GaP)、氧化銦鈰(ICO)、氧化銦鎢(IWO)、氧化銦鈦(ITiO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化
鎵鋁鋅(GAZO)或上述材料之組合。
絕緣層24對於發光疊層25所發之光之穿透率大於90%,折射率小於1.4,較佳為介於1.3與1.4之間。絕緣層24之材料可包括但不限於非氧化物絕緣材料,例如為苯并環丁烯(BCB)、環烯烴聚合物(COC)、氟碳聚合物(Fluorocarbon Polymer)、氮化矽(SiNx)、氟化鈣(CaF2)或氟化鎂(MgF2);絕緣層24之材料可包含鹵化物或IIA族及VII族之化合物,例如氟化鈣(CaF2)或氟化鎂(MgF2)。於此實施例中,絕緣層24之材料係為氟化鎂(MgF2)。絕緣層24之折射率小於窗戶層251與透明導電層23之折射率,因此窗戶層251與絕緣層24間介面之臨界角小於窗戶層251與透明導電層23間介面的臨界角,所以發光疊層25所發之光射向絕緣層24後,在窗戶層251與絕緣層24之間的介面形成全反射的機率增加。
反射層22可反射來自發光疊層25之光,其材料可為金屬材料,包含但不限於銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鉛(Pb)、鈦(Ti)、鎳(Ni)、鉑(Pt)、鎢(W)或上述材料之合金等。黏結層21可連接基板20與反射層22,可具有複數個從屬層(未顯示)。黏結層21之材料可為透明導電材料或金屬材料,透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、磷化鎵(GaP)、氧化銦鈰(ICO)、氧化銦鎢(IWO)、氧化銦鈦(ITiO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化
鎵鋁鋅(GAZO)或上述材料之組合。金屬材料包含但不限於銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鉛(Pb)、鈦(Ti)、鎳(Ni)、鉑(Pt)、鎢(W)或上述材料之合金等。
基板20可用以支持位於其上之發光疊層25與其它層或結構,其材料可為透明材料或導電材料。透明材料包含但不限於藍寶石(Sapphire)、鑽石(Diamond)、玻璃(Glass)、環氧樹脂(Epoxy)、石英(Quartz)、壓克力(Acryl)、氧化鋁(Al2O3)、氧化鋅(ZnO)或氮化鋁(AlN)等。導電材料包含但不限於銅(Cu)、鋁(Al)、鉬(Mo)、錫(Sn)、鋅(Zn)、鎘(Cd)、鎳(Ni)、鈷(Co)、類鑽碳薄膜(Diamond Like Carbon;DLC)、石墨(Graphite)、碳纖維(Carbon fiber)、金屬基複合材料(Metal Matrix Composite;MMC)、陶瓷基複合材料(Ceramic Matrix Composite;CMC)、矽(Si)、磷化碘(IP)、硒化鋅(ZnSe)、砷化鎵(GaAs)、碳化矽(SiC)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、硒化鋅(ZnSe)、磷化銦(InP)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2)。
與一未包含有透明絕緣層28,其他結構均相同的發光元件相較,本實施例之發光元件1的電流高出約6至7%,故出光效率提高。於另一實施例中,透明絕緣層28之厚度係為1μm,相較於透明絕緣層28之厚度為0.5μm之發光元件,其電流又更高。於又一實施例中,透明絕緣層28之厚度係為2μm,相較於透明絕緣層28之厚度為1μm之發光元件,其電流又高出約5%,因此出光效率又更高。
第3圖為本發明第二實施例揭露一燈泡分解示意
圖。燈泡2包含一燈罩41,一透鏡42,一發光模組44,一燈座45,一散熱鰭片46,一結合部47及一電連接器48。其中發光模組44係包含一載板43,並在載板43上包含至少一個上述實施例中的發光元件1。
以上各圖式與說明雖僅分別對應特定實施例,然而,各個實施例中所說明或揭露之元件、實施方式、設計準則、及技術原理除在彼此顯相衝突、矛盾、或難以共同實施之外,吾人當可依其所需任意參照、交換、搭配、協調、或合併。
雖然本發明已說明如上,然其並非用以限制本發明之範圍、實施順序、或使用之材料與製程方法。對於本發明所作之各種修飾與變更,皆不脫本發明之精神與範圍。
Claims (10)
- 一發光元件,包含:一發光疊層,包含一活性層;一透明絕緣層位於該發光疊層之上,該透明絕緣層具有一邊緣;及一電極區,係包含一第一電極位於該透明絕緣層之上,且該第一電極具有一邊緣;其中於該發光元件之上視圖中,該第一電極遠離該透明絕緣層的表面之表面積小於該透明絕緣層遠離該發光疊層之表面的表面積,且該透明絕緣層之折射率係介於1至3.4之間,穿透率(T%)係大於80%;以及一電接觸層,位於該發光疊層之上且接觸該透明絕緣層;其中該電極區更包含一延伸電極包覆該電接觸層,且部分該透明絕緣層覆蓋於部分該電接觸層之上。
- 如申請專利範圍第1項所述的發光元件,其中於該發光元件的一剖面圖中,該透明絕緣層的部分該邊緣係凸出於該第一電極之該邊緣。
- 如申請專利範圍第1項所述的發光元件,其中該透明絕緣層之面積大致為該活性層之面積的5%至97%之間。
- 如申請專利範圍第1項所述的發光元件,其中該透明絕緣層之厚度係不小於800埃(Å)。
- 如申請專利範圍第1項所述的發光元件,其中該透明絕緣層包含一氧化物材料。
- 如申請專利範圍第5項所述的發光元件,其中該氧化物材料包含氧化鋁鋅。
- 如申請專利範圍第1項所述的發光元件,其中該透明絕緣層之折射率係介於2至3.4之間。
- 如申請專利範圍第1項所述的發光元件,更包括一絕緣層位於該發光疊層之下。
- 如申請專利範圍第8項所述的發光元件,其中該絕緣層的折射率小於1.4。
- 如申請專利範圍第8項所述的發光元件,期更包含一位於該絕緣層下的反射層。
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TW102137244A TWI635772B (zh) | 2013-10-15 | 2013-10-15 | 發光元件 |
DE201410114923 DE102014114923A1 (de) | 2013-10-15 | 2014-10-14 | Licht emittierende Vorrichtung |
US14/515,147 US9276176B2 (en) | 2013-10-15 | 2014-10-15 | Light-emitting device |
US15/004,450 US9601667B2 (en) | 2013-10-15 | 2016-01-22 | Light-emitting device |
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TWI635772B (zh) * | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
KR20170075291A (ko) * | 2015-12-23 | 2017-07-03 | 엘지이노텍 주식회사 | 발광소자 |
JP2017204640A (ja) * | 2016-05-11 | 2017-11-16 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 発光デバイス及びその製造方法 |
TWI784652B (zh) * | 2016-05-11 | 2022-11-21 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
DE102017114467A1 (de) * | 2017-06-29 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip mit transparenter Stromaufweitungsschicht |
US20210074880A1 (en) * | 2018-12-18 | 2021-03-11 | Bolb Inc. | Light-output-power self-awareness light-emitting device |
DE102019108216A1 (de) * | 2019-03-29 | 2020-10-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement mit dielektrischer Schicht und transparenter leitfähiger Schicht und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
US20200365767A1 (en) * | 2019-05-17 | 2020-11-19 | Shin-Etsu Opto Electronic Co., Ltd. | Light-emitting diode structure and method for forming the same |
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US6180960B1 (en) * | 1995-04-12 | 2001-01-30 | Nippon Sheet Glass Co., Ltd. | Surface light-emitting element and self-scanning type light-emitting device |
TWI291243B (en) * | 2005-06-24 | 2007-12-11 | Epistar Corp | A semiconductor light-emitting device |
US20110108879A1 (en) * | 2009-05-08 | 2011-05-12 | Chien-Fu Huang | Light-emitting device |
TW201135969A (en) * | 2010-03-22 | 2011-10-16 | Lg Innotek Co Ltd | Light emitting device |
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US4864370A (en) * | 1987-11-16 | 1989-09-05 | Motorola, Inc. | Electrical contact for an LED |
DE19517697A1 (de) * | 1995-05-13 | 1996-11-14 | Telefunken Microelectron | Strahlungsemittierende Diode |
TWI635772B (zh) * | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
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Patent Citations (4)
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US6180960B1 (en) * | 1995-04-12 | 2001-01-30 | Nippon Sheet Glass Co., Ltd. | Surface light-emitting element and self-scanning type light-emitting device |
TWI291243B (en) * | 2005-06-24 | 2007-12-11 | Epistar Corp | A semiconductor light-emitting device |
US20110108879A1 (en) * | 2009-05-08 | 2011-05-12 | Chien-Fu Huang | Light-emitting device |
TW201135969A (en) * | 2010-03-22 | 2011-10-16 | Lg Innotek Co Ltd | Light emitting device |
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US20150102285A1 (en) | 2015-04-16 |
DE102014114923A1 (de) | 2015-04-16 |
US9601667B2 (en) | 2017-03-21 |
US20160141459A1 (en) | 2016-05-19 |
US9276176B2 (en) | 2016-03-01 |
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