DE112010003451T8 - Selektives Züchten von Nanoröhren innerhalb von Durchgangskontakten unter Verwendung eines lonenstrahls - Google Patents
Selektives Züchten von Nanoröhren innerhalb von Durchgangskontakten unter Verwendung eines lonenstrahls Download PDFInfo
- Publication number
- DE112010003451T8 DE112010003451T8 DE112010003451T DE112010003451T DE112010003451T8 DE 112010003451 T8 DE112010003451 T8 DE 112010003451T8 DE 112010003451 T DE112010003451 T DE 112010003451T DE 112010003451 T DE112010003451 T DE 112010003451T DE 112010003451 T8 DE112010003451 T8 DE 112010003451T8
- Authority
- DE
- Germany
- Prior art keywords
- nanotubes
- ion beam
- selective growth
- via contacts
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1094—Conducting structures comprising nanotubes or nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Carbon And Carbon Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/549,929 US9099537B2 (en) | 2009-08-28 | 2009-08-28 | Selective nanotube growth inside vias using an ion beam |
US12/549,929 | 2009-08-28 | ||
PCT/EP2010/061403 WO2011023519A1 (en) | 2009-08-28 | 2010-08-05 | Selective nanotube growth inside vias using an ion beam |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112010003451T5 DE112010003451T5 (de) | 2012-10-31 |
DE112010003451T8 true DE112010003451T8 (de) | 2013-01-10 |
DE112010003451B4 DE112010003451B4 (de) | 2015-01-22 |
Family
ID=43034498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112010003451.6T Expired - Fee Related DE112010003451B4 (de) | 2009-08-28 | 2010-08-05 | Selektives Züchten einer einzelnen Nanoröhre innerhalb eines Durchgangskontaktes unter Verwendung eines lonenstrahls |
Country Status (7)
Country | Link |
---|---|
US (1) | US9099537B2 (de) |
JP (1) | JP5657001B2 (de) |
CN (1) | CN102484096B (de) |
DE (1) | DE112010003451B4 (de) |
GB (1) | GB2485486B (de) |
TW (1) | TWI474973B (de) |
WO (1) | WO2011023519A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI499553B (zh) * | 2009-09-14 | 2015-09-11 | Univ Nat Cheng Kung | 奈米碳管及其製備方法 |
JP2012186208A (ja) * | 2011-03-03 | 2012-09-27 | Ulvac Japan Ltd | 配線形成方法、及び配線形成装置 |
CN104103695B (zh) * | 2013-04-02 | 2017-01-25 | 清华大学 | 薄膜晶体管及其制备方法 |
JP6039534B2 (ja) | 2013-11-13 | 2016-12-07 | 東京エレクトロン株式会社 | カーボンナノチューブの生成方法及び配線形成方法 |
US10852542B2 (en) * | 2017-03-14 | 2020-12-01 | Magic Leap, Inc. | Waveguides with light absorbing films and processes for forming the same |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555167A (ja) | 1991-08-28 | 1993-03-05 | Nec Corp | 半導体装置の製造方法 |
EP1341184B1 (de) | 2002-02-09 | 2005-09-14 | Samsung Electronics Co., Ltd. | Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung |
DE10250834A1 (de) | 2002-10-31 | 2004-05-19 | Infineon Technologies Ag | Speicherzelle, Speicherzellen-Anordnung, Strukturier-Anordnung und Verfahren zum Herstellen einer Speicherzelle |
DE10250829B4 (de) | 2002-10-31 | 2006-11-02 | Infineon Technologies Ag | Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle |
JP4683188B2 (ja) | 2002-11-29 | 2011-05-11 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US20040182600A1 (en) | 2003-03-20 | 2004-09-23 | Fujitsu Limited | Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof |
KR100982419B1 (ko) | 2003-05-01 | 2010-09-15 | 삼성전자주식회사 | 탄소나노튜브를 이용한 반도체 소자의 배선 형성 방법 및이 방법에 의해 제조된 반도체 소자 |
US20040222082A1 (en) * | 2003-05-05 | 2004-11-11 | Applied Materials, Inc. | Oblique ion milling of via metallization |
KR100504701B1 (ko) | 2003-06-11 | 2005-08-02 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
JP4689218B2 (ja) | 2003-09-12 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4448356B2 (ja) | 2004-03-26 | 2010-04-07 | 富士通株式会社 | 半導体装置およびその製造方法 |
US20050233263A1 (en) * | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Growth of carbon nanotubes at low temperature |
KR20070028604A (ko) * | 2004-06-30 | 2007-03-12 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 나노선(nanowire)에 의해 접촉되는 전도성 있는재료로 된 층이 있는 전기 장치 및 그 제조 방법 |
KR100653701B1 (ko) * | 2004-08-20 | 2006-12-04 | 삼성전자주식회사 | 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법 |
US7129567B2 (en) | 2004-08-31 | 2006-10-31 | Micron Technology, Inc. | Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements |
US7233071B2 (en) | 2004-10-04 | 2007-06-19 | International Business Machines Corporation | Low-k dielectric layer based upon carbon nanostructures |
KR100645064B1 (ko) | 2005-05-23 | 2006-11-10 | 삼성전자주식회사 | 금속 산화물 저항 기억소자 및 그 제조방법 |
US20070148963A1 (en) | 2005-12-27 | 2007-06-28 | The Hong Kong University Of Science And Technology | Semiconductor devices incorporating carbon nanotubes and composites thereof |
JP4899703B2 (ja) | 2006-08-07 | 2012-03-21 | 富士通株式会社 | カーボン配線構造およびその製造方法、および半導体装置 |
KR100791948B1 (ko) | 2006-09-27 | 2008-01-04 | 삼성전자주식회사 | 탄소나노튜브 배선 형성방법 및 이를 이용한 반도체 소자의배선 형성방법 |
JP5181512B2 (ja) | 2007-03-30 | 2013-04-10 | 富士通セミコンダクター株式会社 | 電子デバイスの製造方法 |
JP5233147B2 (ja) | 2007-03-30 | 2013-07-10 | 富士通セミコンダクター株式会社 | 電子デバイス及びその製造方法 |
KR100827524B1 (ko) | 2007-04-06 | 2008-05-06 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
FR2917892B1 (fr) | 2007-06-22 | 2009-08-28 | Commissariat Energie Atomique | Procede de realisation d'une connexion electrique a base de nanotubes gaines individuellement |
FR2917893B1 (fr) | 2007-06-22 | 2009-08-28 | Commissariat Energie Atomique | Procede de fabrication d'une connexion electrique a base de nanotubes de carbone |
JP2009117591A (ja) | 2007-11-06 | 2009-05-28 | Panasonic Corp | 配線構造及びその形成方法 |
-
2009
- 2009-08-28 US US12/549,929 patent/US9099537B2/en not_active Expired - Fee Related
-
2010
- 2010-08-05 DE DE112010003451.6T patent/DE112010003451B4/de not_active Expired - Fee Related
- 2010-08-05 CN CN201080037482.8A patent/CN102484096B/zh not_active Expired - Fee Related
- 2010-08-05 WO PCT/EP2010/061403 patent/WO2011023519A1/en active Application Filing
- 2010-08-05 GB GB1119868.6A patent/GB2485486B/en not_active Expired - Fee Related
- 2010-08-05 JP JP2012525974A patent/JP5657001B2/ja not_active Expired - Fee Related
- 2010-08-27 TW TW099128814A patent/TWI474973B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102484096B (zh) | 2014-04-02 |
DE112010003451B4 (de) | 2015-01-22 |
JP5657001B2 (ja) | 2015-01-21 |
JP2013503465A (ja) | 2013-01-31 |
GB2485486B (en) | 2013-10-30 |
US9099537B2 (en) | 2015-08-04 |
GB2485486A (en) | 2012-05-16 |
DE112010003451T5 (de) | 2012-10-31 |
WO2011023519A1 (en) | 2011-03-03 |
TWI474973B (zh) | 2015-03-01 |
TW201124339A (en) | 2011-07-16 |
US20110048930A1 (en) | 2011-03-03 |
CN102484096A (zh) | 2012-05-30 |
GB201119868D0 (en) | 2011-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CL2016001190A1 (es) | Cultivo de células de mamífero. | |
BRPI1011886A2 (pt) | solução contendo ácido hiplocloroso e métodos do uso do mesmo. | |
DK2360943T3 (da) | Beamforming i høreapparater | |
TR201901930T4 (tr) | Topraktaki mikrobiyal aktivitenin geliştirilmesine yönelik bir yöntem. | |
BR112013013914A2 (pt) | derivados de hidantoína úteis como inibidores de kv3 | |
IL222231A0 (en) | Laser beam analysis apparatus | |
DK2574677T3 (da) | Fremgangsmåder til celledyrkning | |
BRPI1008219A2 (pt) | Biorreator para o cultivo de células de mamíferos | |
FI20096288A0 (fi) | Formulations and methods for culturing stem cells | |
EA201300074A1 (ru) | Способ получения представляющего интерес соединения | |
BRPI1008297A2 (pt) | Metodo para a criopreservacao de celulas, estruturas celulares artificiais ou montagens de tecidos complexos tridimensionais | |
DK2281053T3 (da) | Fremstilling af biobrændstof af plantevævskulturkilder | |
DE602008001624D1 (de) | Verwendung einer Elektrode zur Wasserstofferzeugung | |
EP2630706A4 (de) | Für steuerbare strahausrichtung konfiguriertes faserlasersystem | |
BRPI0913925A2 (pt) | Diferenciação de células-tronco pluripotentes | |
DE112010003451T8 (de) | Selektives Züchten von Nanoröhren innerhalb von Durchgangskontakten unter Verwendung eines lonenstrahls | |
BRPI0822744B8 (pt) | composição herbicida homogênea líquida, método de controle de erva daninha, e método de produção de composição herbicida homogênea líquida | |
BRPI0910644A2 (pt) | sistema de completação de árvore de multisseções | |
EP2252726A4 (de) | Verfahren und system zur verbesserung von chirurgischen klingen durch anwendung der gasclusterionenstrahltechnologie und verbesserte chirurgische klingen | |
DK2704741T3 (da) | Fremgangsmåder til håndtering af biologiske lægemidler indeholdende levende celler | |
BRPI1012359A2 (pt) | obras de arte de técnica mista e métodos de criação | |
BRPI1015273A2 (pt) | suspensão aquosa de carbono ativo e métodos de uso | |
FR2937857B1 (fr) | Membrane chirurgicale antiadherence | |
EE201000069A (et) | Meetod ja elektrolser desinfitseeriva vahendi saamiseks | |
BR112012000427A2 (pt) | formação de feixe utilizando livros de códigos de base e diferenciais. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R163 | Identified publications notified | ||
R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R084 | Declaration of willingness to licence | ||
R020 | Patent grant now final | ||
R081 | Change of applicant/patentee |
Owner name: ELPIS TECHNOLOGIES INC., CA Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US Owner name: ELPIS TECHNOLOGIES INC., CA Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, NY, US |
|
R082 | Change of representative |
Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |