DE112010003451T8 - Selektives Züchten von Nanoröhren innerhalb von Durchgangskontakten unter Verwendung eines lonenstrahls - Google Patents

Selektives Züchten von Nanoröhren innerhalb von Durchgangskontakten unter Verwendung eines lonenstrahls Download PDF

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Publication number
DE112010003451T8
DE112010003451T8 DE112010003451T DE112010003451T DE112010003451T8 DE 112010003451 T8 DE112010003451 T8 DE 112010003451T8 DE 112010003451 T DE112010003451 T DE 112010003451T DE 112010003451 T DE112010003451 T DE 112010003451T DE 112010003451 T8 DE112010003451 T8 DE 112010003451T8
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DE
Germany
Prior art keywords
nanotubes
ion beam
selective growth
via contacts
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112010003451T
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English (en)
Other versions
DE112010003451B4 (de
DE112010003451T5 (de
Inventor
Alessandro Callegari
Katherina Babich
Eugene O'Sullivan
John Connolly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elpis Technologies Inc Ca
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE112010003451T5 publication Critical patent/DE112010003451T5/de
Application granted granted Critical
Publication of DE112010003451T8 publication Critical patent/DE112010003451T8/de
Publication of DE112010003451B4 publication Critical patent/DE112010003451B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045Object or beam position registration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53276Conductive materials containing carbon, e.g. fullerenes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068Formation and after-treatment of conductors
    • H01L2221/1094Conducting structures comprising nanotubes or nanowires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112010003451.6T 2009-08-28 2010-08-05 Selektives Züchten einer einzelnen Nanoröhre innerhalb eines Durchgangskontaktes unter Verwendung eines lonenstrahls Expired - Fee Related DE112010003451B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/549,929 US9099537B2 (en) 2009-08-28 2009-08-28 Selective nanotube growth inside vias using an ion beam
US12/549,929 2009-08-28
PCT/EP2010/061403 WO2011023519A1 (en) 2009-08-28 2010-08-05 Selective nanotube growth inside vias using an ion beam

Publications (3)

Publication Number Publication Date
DE112010003451T5 DE112010003451T5 (de) 2012-10-31
DE112010003451T8 true DE112010003451T8 (de) 2013-01-10
DE112010003451B4 DE112010003451B4 (de) 2015-01-22

Family

ID=43034498

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010003451.6T Expired - Fee Related DE112010003451B4 (de) 2009-08-28 2010-08-05 Selektives Züchten einer einzelnen Nanoröhre innerhalb eines Durchgangskontaktes unter Verwendung eines lonenstrahls

Country Status (7)

Country Link
US (1) US9099537B2 (de)
JP (1) JP5657001B2 (de)
CN (1) CN102484096B (de)
DE (1) DE112010003451B4 (de)
GB (1) GB2485486B (de)
TW (1) TWI474973B (de)
WO (1) WO2011023519A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499553B (zh) * 2009-09-14 2015-09-11 Univ Nat Cheng Kung 奈米碳管及其製備方法
JP2012186208A (ja) * 2011-03-03 2012-09-27 Ulvac Japan Ltd 配線形成方法、及び配線形成装置
CN104103695B (zh) * 2013-04-02 2017-01-25 清华大学 薄膜晶体管及其制备方法
JP6039534B2 (ja) 2013-11-13 2016-12-07 東京エレクトロン株式会社 カーボンナノチューブの生成方法及び配線形成方法
US10852542B2 (en) * 2017-03-14 2020-12-01 Magic Leap, Inc. Waveguides with light absorbing films and processes for forming the same

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JPH0555167A (ja) 1991-08-28 1993-03-05 Nec Corp 半導体装置の製造方法
EP1341184B1 (de) 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung
DE10250834A1 (de) 2002-10-31 2004-05-19 Infineon Technologies Ag Speicherzelle, Speicherzellen-Anordnung, Strukturier-Anordnung und Verfahren zum Herstellen einer Speicherzelle
DE10250829B4 (de) 2002-10-31 2006-11-02 Infineon Technologies Ag Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle
JP4683188B2 (ja) 2002-11-29 2011-05-11 日本電気株式会社 半導体装置およびその製造方法
US20040182600A1 (en) 2003-03-20 2004-09-23 Fujitsu Limited Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
KR100982419B1 (ko) 2003-05-01 2010-09-15 삼성전자주식회사 탄소나노튜브를 이용한 반도체 소자의 배선 형성 방법 및이 방법에 의해 제조된 반도체 소자
US20040222082A1 (en) * 2003-05-05 2004-11-11 Applied Materials, Inc. Oblique ion milling of via metallization
KR100504701B1 (ko) 2003-06-11 2005-08-02 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
JP4689218B2 (ja) 2003-09-12 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4448356B2 (ja) 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
US20050233263A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Growth of carbon nanotubes at low temperature
KR20070028604A (ko) * 2004-06-30 2007-03-12 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 나노선(nanowire)에 의해 접촉되는 전도성 있는재료로 된 층이 있는 전기 장치 및 그 제조 방법
KR100653701B1 (ko) * 2004-08-20 2006-12-04 삼성전자주식회사 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법
US7129567B2 (en) 2004-08-31 2006-10-31 Micron Technology, Inc. Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
KR100645064B1 (ko) 2005-05-23 2006-11-10 삼성전자주식회사 금속 산화물 저항 기억소자 및 그 제조방법
US20070148963A1 (en) 2005-12-27 2007-06-28 The Hong Kong University Of Science And Technology Semiconductor devices incorporating carbon nanotubes and composites thereof
JP4899703B2 (ja) 2006-08-07 2012-03-21 富士通株式会社 カーボン配線構造およびその製造方法、および半導体装置
KR100791948B1 (ko) 2006-09-27 2008-01-04 삼성전자주식회사 탄소나노튜브 배선 형성방법 및 이를 이용한 반도체 소자의배선 형성방법
JP5181512B2 (ja) 2007-03-30 2013-04-10 富士通セミコンダクター株式会社 電子デバイスの製造方法
JP5233147B2 (ja) 2007-03-30 2013-07-10 富士通セミコンダクター株式会社 電子デバイス及びその製造方法
KR100827524B1 (ko) 2007-04-06 2008-05-06 주식회사 하이닉스반도체 반도체 소자의 제조 방법
FR2917892B1 (fr) 2007-06-22 2009-08-28 Commissariat Energie Atomique Procede de realisation d'une connexion electrique a base de nanotubes gaines individuellement
FR2917893B1 (fr) 2007-06-22 2009-08-28 Commissariat Energie Atomique Procede de fabrication d'une connexion electrique a base de nanotubes de carbone
JP2009117591A (ja) 2007-11-06 2009-05-28 Panasonic Corp 配線構造及びその形成方法

Also Published As

Publication number Publication date
CN102484096B (zh) 2014-04-02
DE112010003451B4 (de) 2015-01-22
JP5657001B2 (ja) 2015-01-21
JP2013503465A (ja) 2013-01-31
GB2485486B (en) 2013-10-30
US9099537B2 (en) 2015-08-04
GB2485486A (en) 2012-05-16
DE112010003451T5 (de) 2012-10-31
WO2011023519A1 (en) 2011-03-03
TWI474973B (zh) 2015-03-01
TW201124339A (en) 2011-07-16
US20110048930A1 (en) 2011-03-03
CN102484096A (zh) 2012-05-30
GB201119868D0 (en) 2011-12-28

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R016 Response to examination communication
R018 Grant decision by examination section/examining division
R084 Declaration of willingness to licence
R020 Patent grant now final
R081 Change of applicant/patentee

Owner name: ELPIS TECHNOLOGIES INC., CA

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

Owner name: ELPIS TECHNOLOGIES INC., CA

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, NY, US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee