DE102009014414A1 - VHF-Elektrodenanordnung, Vorrichtung und Verfahren - Google Patents

VHF-Elektrodenanordnung, Vorrichtung und Verfahren Download PDF

Info

Publication number
DE102009014414A1
DE102009014414A1 DE102009014414A DE102009014414A DE102009014414A1 DE 102009014414 A1 DE102009014414 A1 DE 102009014414A1 DE 102009014414 A DE102009014414 A DE 102009014414A DE 102009014414 A DE102009014414 A DE 102009014414A DE 102009014414 A1 DE102009014414 A1 DE 102009014414A1
Authority
DE
Germany
Prior art keywords
electrode
substrate
electrodes
partial
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009014414A
Other languages
German (de)
English (en)
Inventor
Michael Dr. Geisler
Rudolf Beckmann
Thomas Merz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Buehler Alzenau GmbH
Original Assignee
Leybold Optics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics GmbH filed Critical Leybold Optics GmbH
Priority to DE102009014414A priority Critical patent/DE102009014414A1/de
Priority to PCT/EP2009/007759 priority patent/WO2010049158A2/de
Priority to EP09759655A priority patent/EP2347427A2/de
Priority to JP2011533610A priority patent/JP2012507126A/ja
Priority to TW98137045A priority patent/TW201024453A/zh
Publication of DE102009014414A1 publication Critical patent/DE102009014414A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
DE102009014414A 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren Withdrawn DE102009014414A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102009014414A DE102009014414A1 (de) 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren
PCT/EP2009/007759 WO2010049158A2 (de) 2008-10-29 2009-10-29 Vhf-anordnung
EP09759655A EP2347427A2 (de) 2008-10-29 2009-10-29 Vhf-anordnung
JP2011533610A JP2012507126A (ja) 2008-10-29 2009-10-29 Ｖｈｆ装置
TW98137045A TW201024453A (en) 2008-10-29 2009-10-29 VHF assembly

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008053703 2008-10-29
DE102008053703.9 2008-10-29
DE102008054144.3 2008-10-31
DE102008054144 2008-10-31
DE102009014414A DE102009014414A1 (de) 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren

Publications (1)

Publication Number Publication Date
DE102009014414A1 true DE102009014414A1 (de) 2010-05-12

Family

ID=42096556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009014414A Withdrawn DE102009014414A1 (de) 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren

Country Status (5)

Country Link
EP (1) EP2347427A2 (ja)
JP (1) JP2012507126A (ja)
DE (1) DE102009014414A1 (ja)
TW (1) TW201024453A (ja)
WO (1) WO2010049158A2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11126775B2 (en) * 2019-04-12 2021-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. IC layout, method, device, and system
DE102020109326A1 (de) * 2019-04-12 2020-10-15 Taiwan Semiconductor Manufacturing Co. Ltd. Ic-vorrichtung, verfahren, layout und system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008047938A (ja) 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253122B2 (ja) * 1992-04-01 2002-02-04 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びにそれを用いた半導体デバイスの製造方法
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP3872741B2 (ja) 2002-10-01 2007-01-24 三菱重工業株式会社 プラズマ化学蒸着装置
JP4413084B2 (ja) 2003-07-30 2010-02-10 シャープ株式会社 プラズマプロセス装置及びそのクリーニング方法
JP3590955B2 (ja) * 2004-05-26 2004-11-17 村田 正義 平衡伝送回路と、該平衡伝送回路により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP4625397B2 (ja) * 2005-10-18 2011-02-02 三菱重工業株式会社 放電電極、薄膜製造装置及び太陽電池の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008047938A (ja) 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Artikel von Amanatides, Mataras und Rapakoulias, Journal of Applied Physics Volume 90, Number 11, Dezember 2001

Also Published As

Publication number Publication date
WO2010049158A3 (de) 2010-07-01
WO2010049158A2 (de) 2010-05-06
TW201024453A (en) 2010-07-01
JP2012507126A (ja) 2012-03-22
EP2347427A2 (de) 2011-07-27

Similar Documents

Publication Publication Date Title
EP2839500B1 (de) Mikrowellenplasmaerzeugungsvorrichtung und verfahren zu deren betrieb
DE20122901U1 (de) RF Plasma Reaktor
EP3309815B1 (de) Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
DE102009020436A1 (de) Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats
EP1290926B1 (de) Hochfrequenz-plasmaquelle
DE102009014414A1 (de) VHF-Elektrodenanordnung, Vorrichtung und Verfahren
DE102005049266B4 (de) Vorrichtung und Verfahren zur Plasmabehandlung von Objekten
DE102013107659B4 (de) Plasmachemische Beschichtungsvorrichtung
DE102009044496A1 (de) Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen
WO2012119700A1 (de) Vorrichtung und verfahren zum plasmaunterstützten behandeln zumindest zweier substrate
WO2019233750A1 (de) Lineare mikrowellen-plasmaquelle mit getrennten plasmaräumen
DE10201992B4 (de) Vorrichtung zur plasmagestützten Bearbeitung von Oberflächen planarer Substrate
CH686254A5 (de) Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
DE102004043967A1 (de) Anordnung zur Plasmabehandlung eines Substrates und Verfahren zum Betreiben der Anordnung
DE102012111186B4 (de) Verfahren und Vorrichtung zum Erzeugen einer Magnetron-Entladung
WO2012156062A1 (de) Verfahren zur plasmabehandlung eines substrats in einer plasmavorrichtung
DE102006022799A1 (de) Vorrichtung zur plasmagestützten chemischen Oberflächenbehandlung von Substraten im Vakuum
DE102012219667A1 (de) Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat
DE102011009347B4 (de) Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
DE10123583B4 (de) Vorrichtung und Verfahren zur Beschichtung und/oder Oberflächenbehandlung von Substraten mittels Niederdruck-Plasma sowie Verwendung der Vorrichtung
EP2558609B1 (de) Verfahren zum beschichten eines substrates innerhalb einer vakuumkammer mittels plasmaunterstützer chemischer dampfabscheidung
WO2017077106A1 (de) Vorrichtung und verfahren zur vakuumbeschichtung
WO2019002262A1 (de) Vorrichtung zur hochtemperatur-cvd mit einer stapelanordnung aus gasverteilern und aufnahmeplatten
DE102015115329A1 (de) Verfahren zur plasmaunterstützten Abscheidung von Aluminiumoxiddünnschichten auf Halbleiterwafern für die Herstellung von Wafersolarzellen und Inline-PECVD-Anlage

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20141001