WO2010049158A3 - Vhf-anordnung - Google Patents

Vhf-anordnung Download PDF

Info

Publication number
WO2010049158A3
WO2010049158A3 PCT/EP2009/007759 EP2009007759W WO2010049158A3 WO 2010049158 A3 WO2010049158 A3 WO 2010049158A3 EP 2009007759 W EP2009007759 W EP 2009007759W WO 2010049158 A3 WO2010049158 A3 WO 2010049158A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
vhf
vicinity
coupled
front face
Prior art date
Application number
PCT/EP2009/007759
Other languages
English (en)
French (fr)
Other versions
WO2010049158A2 (de
Inventor
Michael Geisler
Thomas Merz
Rudolf Beckmann
Original Assignee
Leybold Optics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics Gmbh filed Critical Leybold Optics Gmbh
Priority to EP09759655A priority Critical patent/EP2347427A2/de
Priority to JP2011533610A priority patent/JP2012507126A/ja
Publication of WO2010049158A2 publication Critical patent/WO2010049158A2/de
Publication of WO2010049158A3 publication Critical patent/WO2010049158A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die VHF-Plasmaelektrode mit einem vorzugsweise prismatisch ausgebildeten, länglichen Elektrodenkörper (1), welcher eine Elektrodenfläche aufweist, die mit zumindest zwei Anschlusselementen (3) zur Zuführung von elektrischer Leistung elektrisch verbunden ist oder verbindbar ist, wobei zumindest ein erstes Anschlusselement (3A) an oder nahe einer ersten Stirnseite (50A) und zumindest ein zweites Anschlusselement an oder nahe einer zweiten Stirnseite des Elektrodenkörpers angekoppelt und vorzugsweise die Elektrode in einer die Elektrodenfläche freilassenden Einbettungskomponente (7) aus dielektrischem Material angeordnet sowie vorzugsweise ein die Elektrodenfläche freilassendes Schirmelement (2) vorgesehen ist, das die Elektrode zusammen mit der Einbettungskomponente umschließt, zeichnet sich dadurch aus, dass zumindest eines der Anschlusselemente als VHF-Vakuumdurchführungselement ausgebildet ist.
PCT/EP2009/007759 2008-10-29 2009-10-29 Vhf-anordnung WO2010049158A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09759655A EP2347427A2 (de) 2008-10-29 2009-10-29 Vhf-anordnung
JP2011533610A JP2012507126A (ja) 2008-10-29 2009-10-29 Ｖｈｆ装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102008053703 2008-10-29
DE102008053703.9 2008-10-29
DE102008054144.3 2008-10-31
DE102008054144 2008-10-31
DE102009014414A DE102009014414A1 (de) 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren
DE102009014414.5 2009-03-26

Publications (2)

Publication Number Publication Date
WO2010049158A2 WO2010049158A2 (de) 2010-05-06
WO2010049158A3 true WO2010049158A3 (de) 2010-07-01

Family

ID=42096556

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/007759 WO2010049158A2 (de) 2008-10-29 2009-10-29 Vhf-anordnung

Country Status (5)

Country Link
EP (1) EP2347427A2 (de)
JP (1) JP2012507126A (de)
DE (1) DE102009014414A1 (de)
TW (1) TW201024453A (de)
WO (1) WO2010049158A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11126775B2 (en) * 2019-04-12 2021-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. IC layout, method, device, and system
DE102020109326A1 (de) * 2019-04-12 2020-10-15 Taiwan Semiconductor Manufacturing Co. Ltd. Ic-vorrichtung, verfahren, layout und system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
US20050022740A1 (en) * 2003-07-30 2005-02-03 Sharp Kabushiki Kaisha Plasma processing system and cleaning method for the same
EP1548150A1 (de) * 2002-10-01 2005-06-29 Mitsubishi Heavy Industries Plasmaverarbeitungssystem und dessen substratverarbeitungsverfahren, plasmaunterst tztes cvd-system und dessen filmabscheidungsverfahren
JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253122B2 (ja) * 1992-04-01 2002-02-04 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びにそれを用いた半導体デバイスの製造方法
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP3590955B2 (ja) * 2004-05-26 2004-11-17 村田 正義 平衡伝送回路と、該平衡伝送回路により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP4625397B2 (ja) * 2005-10-18 2011-02-02 三菱重工業株式会社 放電電極、薄膜製造装置及び太陽電池の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
EP1548150A1 (de) * 2002-10-01 2005-06-29 Mitsubishi Heavy Industries Plasmaverarbeitungssystem und dessen substratverarbeitungsverfahren, plasmaunterst tztes cvd-system und dessen filmabscheidungsverfahren
US20050022740A1 (en) * 2003-07-30 2005-02-03 Sharp Kabushiki Kaisha Plasma processing system and cleaning method for the same
JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Also Published As

Publication number Publication date
WO2010049158A2 (de) 2010-05-06
TW201024453A (en) 2010-07-01
DE102009014414A1 (de) 2010-05-12
JP2012507126A (ja) 2012-03-22
EP2347427A2 (de) 2011-07-27

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