TW201024453A - VHF assembly - Google Patents

Abstract

The invention relates to a VHF plasma electrode comprising a preferably prismatic, elongated electrode body having an electrode surface that is or can be electrically connected to at least two connecting elements for supplying electric power, at least one first connecting element being coupled to or in the vicinity of a first front face and at least one second connecting element being coupled to or in the vicinity of a second front face of the electrode body, and the electrode is preferably located in a potting compound consisting of a dielectric material that does not cover the electrode surface. Preferably a shielding element that does not cover the electrode surface and that surrounds the electrode together with the potting compound is provided. The electrode is characterised in that at least one of the connecting elements is designed as a VHF vacuum feedthrough element.

Description

201024453 六、發明說明： 【發明所屬之技術領域】 本發明關於申請專利範圍各獨立項一種特高頻（VhF ) 電漿電極、一種VHF裝置及一種作電漿處理的VHF方法。 【先前技術】 在德專利DE 10 2007 022 252.3中發表了一種用於將 大面積的扁平基材（特別是用於製造光伏特模組者）作電 漿鍵覆用的系統’其中該基材面積可在一平方米或更多的 度量級。電漿在一電極和一個對立電極之間產生，所要處 理的基材放入其間。此系統有一改變電極間距離的裝置， 其中設有一較大距離以供在具有基材的程序室中充電荷或 放電時用，並有一較小距離以在基材作處理時用，經由一 乱體蓮蓬頭（Gasdusche，英：gas shower)(它整合到電極 t )供應一種形成覆層的反應氣體或反應氣體混合物。此 氣體蓮蓮頭包含一氣體蓮蓬頭出口板，它具有多數出口開 口’藉之將反應氣體均勻分佈導入程序室。反應氣體在所 要處理的基材與氣體蓮蓬頭之間呈活化之氣體種類位在一 個具有較電子密度的電漿放電之似中性（quasi_neutral )的 電漿團（Plasmabulk )中，將所要處理的基材施以該活化之 氣體種類。基材鍍覆的速度與品質取決於多數之程序參 數’特別是反應氣體的壓力、流量及組成、功率密度及電 漿激勵作用的頻率以及基材溫度。 在用13.56百萬赫的高頻電壓作電漿激勵時，可將一大 201024453 電極面用簡單方式很均勻地供以高電壓，然而隨著功率密 度上升’基材受不想要之離子轟擊的情形也增加。當用一 種特高頻VHF (27百萬赫〜約150百萬赫）的高頻電壓作 電衆激勵時’基材受離子轟擊的情事即使在高功率密度時 也很 乂 ’例如在刊物 Journal of Applied Physics V〇i. 90，No. 11, 2001 年 i2 月的 Amanatides，Maltaras 和 Rapakoulias 的 專題所述者。然而在此’要使該VHF激發電壓經由一個大 φ 面積範圍分佈到電漿體積中，以及因此要達成均勻的電漿 處理均勻度乃是一大問題。 比起使用無線電頻率（RF )來，當VHF使用於將發層 析出以製造光伏特元件（Pv )時，其另外的優點為： •對於電極與對立電極之間距離的改變所受的影響較 小 •較佳的PV品質 •較高之析出速度 φ •經濟性改善 而比起使用RF纟，當使用VHF以將石夕層作大面積的 析出以製PV時，其缺點為有下述的困難： •功率供應到電漿總體積的均勻性 •要避免匹配電路與電聚（當作耗電器）之間的卿 反射結果造成的損失以及構件過度發熱 •泵功率要到達電漿室以及均勻分布在放電室的橫截 5 201024453 【發明内容】 本發明的目的在改善此先前技術。 體 这種目的係利用申請專利範圍各獨立項的特點達成。 在依本發明的一種特高頻電衆電極，具 該-體宜設計成電聚方式且有一電極面，該電= =二個端子元件連接或可連接，以供應電力，其中至 第端子元件在該電極體的一第一端侧之上或附近， 且至少-第二端子元件麵合在該電極體的—第二端侧之上 或附近’且該電極宜設在一個由介電材料構成的埋入元件 :’該埋入元件讓電極面露出’且宜設有一個使該電極面 露出的遮罩讀’該遮罩元件將該電極連同該埋入元件一 齊包圍住，其特徵在： 該二端子元件至少有一個設計成特高頻真空通過元件 的形式。 干 係用於及適合 通過元件 可使功率供應 在此，稱為「電漿電阻」的一種電極 於在一電漿處理裝置中產生一電漿者。 將端子元件設計成真空 (Vacuumdurchftihrungselement)的形式 到電漿的作業達成較高的均勻性。 1丨5又社1；極體的 區域中，此區域距相關的端側的距離至吝 夕兩该二端侧之 的最小距離的彡分之―’則該端子元件稱為耦合在—端 「附近」。 依本發明的 一種用於處理扁平基材 的特高頻電漿處理 201024453 裝置，其中-基材可設在—真空室中在一電極裝置與 對立電極之間，且可在至少一電漿電極裝置與-個對立電 極之間的區域中激發電裝放電，其特徵在：該電聚電 置至少有一個如前述巾_ I @ 、 JI〒叫寻利範圍任一項的電漿電極。 依本發明的一種用於將扁平基材作特高頻電漿處理 特高頻裝置，其中該基材可設在一電極裝置與-個對立電 極之間&真工室中，且在電極與對立電極之間的一區 β "激發電渡放電，其特徵在：至少有一個部分電極與至 少二個端子元件連接成導電方式以供應電力，且在二個相 鄰的部分電極之間的一縫隙之間設有一分離元件，該分離 兀件該電接地端連接或可與該接地端連接。如此，可較容 易在電極面的範圍中產生均勻灼燒的電漿。 本發明還包含一種析出或餘刻或表面改質的程序（其 中使用上述裝置）' 及一種產DO，特別是光伏特裝置產品 '使用上述程序製造該產品）。對應於此，在一種將 ❹扁平基材作特回頻電漿處理的方法中，該電漿處理為一種 =程序或㈣程序或表面改質程序，且該基材設在一真 在個具有至少一電漿電極的電漿電極裝置和一個 2立電極之間且在該電漿電極與該對立電極之間的一區域 中激發電漿放電，其中，剎田$, ^ 其中利用至〉、一個本發明的電漿電極 將電力供到該電漿。 該基材面沿縱邊的線膨脹作用宜大於在真空中的激發 …的λ/8’其中λ為真空中電漿激發的波長。 我們可參考日本專利中請案細8㈣似（申請日 7 201024453 2007年10月17日，申請人材托、 月村田氏），其公開内容可作為 本案的先别技術内容的參考。明顧沾 夸$明顯的，其他VHF的供應方 式’特別是該供給給端子元件的卿電壓的其他相位關係 的VHF供應也包含在本發明或與本發明相容無恃。 有利的實施例見於申請專利範圍附屬項。、 在以下利用實施例和圖式詳細說明本發明，由此也可 看出即使與巾料㈣圍不直接相關的本㈣其他特點和 優點。 【實施方式】 圖1顯示一本發明的裝置的剖面示圖）（與圖8相 似），具有一 VHF電漿電極設置，該電漿電極設置具有三 個在一真空室壁（19)(19a)電漿電極（部分電極） (la)(lb)(lc)，而非如圖8中的一個電極（125)。 各部分電極（la)(lb)(lc)包含一個電極體，它設計成（宜 為長形的）稜柱形式’纟由―種金屬（且宜為對電黎有抵 抗性的金屬如幻冑成。稱為長形的稜柱係指該稜柱的長 邊大於最大的橫截面直徑者。較佳者為方形截面的電極 體。電極（la)〜（ie)的電極體宜對—個垂直於電極縱抽的平 面S成鏡像對稱者。 各部分電極（la)〜（lc)與至少二個端子元件呈導電連 接，以供應電力，其中一第一端子元件（3a)〜（3c)各耦合在 電極體的-第-端側（50a)〜（50c)，而一第二端子元件（圖 1中未示）耦合在電極體的一第二端側，宜與第一端子元件 201024453 成鏡像對稱°顯，然地，端子元件（3a)〜（3e)可設計成共轴線 路形式，端子兀件（3a)〜（3c)宜設計成金屬圓柱體形式。這 —金屬圓柱體用其各一端與電極體（la)〜（lc)連接（例如用 谭接）成導電的方式。 邛刀電極（1 a)〜（丨c)宜供以相同相位的VHF電力。在一 實施例中，各部分電極（1 a)〜（1 c)與一分別的vHF產生器呈201024453 VI. Description of the Invention: [Technical Field] The present invention relates to a special high frequency (VhF) plasma electrode, a VHF device and a VHF method for plasma treatment. [Prior Art] A system for the application of a large-area flat substrate (especially for the manufacture of photovoltaic modules) as a plasma bond is disclosed in German Patent DE 10 2007 022 252.3 The area can be measured on a square meter or more. The plasma is produced between an electrode and an opposite electrode with the substrate to be treated placed therebetween. The system has a means for varying the distance between the electrodes, wherein a greater distance is provided for charging or discharging in a chamber having a substrate, and there is a small distance for use in processing the substrate. A gas shower (which is integrated into the electrode t) supplies a reaction gas or a reaction gas mixture forming a coating. The gas lotus head includes a gas showerhead outlet plate having a plurality of outlet openings 'to which the reaction gas is evenly distributed into the chamber. The gas of the reaction gas between the substrate to be treated and the gas shower head is in a quasi-neutral plasma mass (Plasmabulk) having a plasma discharge of electron density, and the base to be treated is The material is applied to the activated gas species. The speed and quality of substrate plating depends on most of the program parameters', particularly the pressure, flow and composition of the reactant gases, the power density and the frequency of the plasma excitation, and the substrate temperature. When using a high frequency voltage of 13.56 megahertz for plasma excitation, a large 201024453 electrode surface can be supplied with a high voltage in a simple manner, but as the power density increases, the substrate is bombarded with unwanted ions. The situation has also increased. When using a high-frequency VHF (27 megahertz to about 150 megahertz) high-frequency voltage for power excitation, the substrate is bombarded with ions even at high power densities. For example, in the journal Journal Of Applied Physics V〇i. 90, No. 11, 2001 The description of the Amanatides, Maltaras and Rapakoulias in February. However, it is here that the VHF excitation voltage is distributed into the plasma volume via a large φ area, and thus achieving uniform plasma processing uniformity is a problem. Compared to the use of radio frequency (RF), when VHF is used to chromatographically emit a photovoltaic element (Pv), the other advantages are: • The effect on the change in distance between the electrode and the counter electrode Smaller • Better PV quality • Higher deposition rate φ • Economical improvement Compared to the use of RF纟, when VHF is used to deposit a large area of PV layer to produce PV, the disadvantages are as follows: Difficulties: • Uniformity of power supply to total plasma volume • Avoid loss due to the reflection between the matching circuit and the electropolymer (as a consumer) and excessive heating of the components • Pump power must reach the plasma chamber And a cross section uniformly distributed in the discharge chamber 5 201024453 SUMMARY OF THE INVENTION An object of the present invention is to improve this prior art. This purpose is achieved by using the characteristics of each individual item in the scope of the patent application. In the ultra-high frequency electric electrode according to the present invention, the body is preferably designed to be electrically concentrated and has an electrode surface, and the electric== two terminal elements are connected or connectable to supply electric power, wherein to the terminal element On or near a first end side of the electrode body, and at least - the second terminal element is overlaid on or near the second end side of the electrode body ' and the electrode is preferably provided by a dielectric material The embedded component is formed: 'the embedded component exposes the electrode surface' and is preferably provided with a mask for exposing the electrode surface. The mask element surrounds the electrode together with the embedded component, and is characterized in that : The two terminal elements have at least one form designed as an ultra high frequency vacuum through element. Drying is used and suitable for passing power through components. An electrode called a "plasma resistor" produces a plasma in a plasma processing unit. The terminal element is designed in the form of a vacuum (Vacuumdurchftihrungselement) to achieve a higher uniformity in the operation of the plasma. 1丨5也社1; in the region of the polar body, the distance from the relevant end side of the region to the minimum distance of the two ends of the two sides of the eve, the terminal element is called the coupling at the end "nearby". According to the present invention, a UHF plasma treatment 201024453 apparatus for processing a flat substrate, wherein the substrate can be disposed in a vacuum chamber between an electrode device and an opposite electrode, and can be at least one plasma electrode The electrical discharge is excited in a region between the device and the opposite electrode, and is characterized in that the electropolymer has at least one plasma electrode as described in any of the above-mentioned towels _I@, JI. According to the present invention, a flat substrate is used as a UHF plasma processing ultra-high frequency device, wherein the substrate can be disposed between an electrode device and an opposite electrode in a real chamber, and at the electrode a region β "excitation electric discharge between the opposite electrodes, characterized in that at least one partial electrode is connected to at least two terminal elements in a conductive manner to supply electric power, and between two adjacent partial electrodes A separate component is disposed between a gap, and the electrical grounding end of the separating component is connected or connectable to the grounding end. Thus, it is easier to produce a uniformly burning plasma in the range of the electrode faces. The present invention also encompasses a process for precipitation or residual or surface modification (where the above apparatus is used) and a DO, particularly a photovoltaic device product, which is manufactured using the above procedure. Corresponding to this, in a method for treating a flat substrate with a special frequency-returning plasma, the plasma processing is a program or (4) program or a surface modification program, and the substrate is provided in a real a plasma discharge is excited between a plasma electrode device of at least one plasma electrode and a two vertical electrode and in a region between the plasma electrode and the opposite electrode, wherein the brake field $, ^ is utilized to > A plasma electrode of the present invention supplies electrical power to the plasma. The line expansion of the substrate face along the longitudinal side is preferably greater than the λ/8' of the excitation in vacuum, where λ is the wavelength at which the plasma is excited in the vacuum. We can refer to the Japanese patent application 8 (4) (application date 7 201024453 October 17, 2007, applicant material care, Yue Murita), the disclosure of which can be used as a reference for the prior art content of this case. It is obvious that other VHF supply methods, particularly the VHF supply of the other phase relationship of the voltage supplied to the terminal elements, are also included in or compatible with the present invention. Advantageous embodiments are found in the dependent claims. The present invention will be described in detail below using the embodiments and the drawings, and thus other features and advantages of the present invention which are not directly related to the material (four) are also seen. [Embodiment] Figure 1 shows a cross-sectional view of a device of the present invention (similar to Figure 8) having a VHF plasma electrode arrangement having three walls (19) in a vacuum chamber (19a) Plasma electrode (partial electrode) (la) (lb) (lc) instead of one electrode (125) as in FIG. Each partial electrode (1b) (lb) (lc) comprises an electrode body which is designed in the form of a (preferably elongated) prismatic column, which is a metal that is resistant to electricity, such as a phantom. A prism called an elongated shape means that the long side of the prism is larger than the largest cross-sectional diameter. Preferably, the electrode body of the square cross section is preferably the electrode body of the electrode (la)~(ie) perpendicular to The plane S of the longitudinal pumping of the electrodes is mirror-symmetrical. Each of the partial electrodes (la) to (lc) is electrically connected to at least two terminal elements for supplying electric power, wherein a first terminal element (3a) to (3c) are coupled. On the first end side (50a) to (50c) of the electrode body, and a second terminal element (not shown in FIG. 1) coupled to a second end side of the electrode body, preferably mirroring the first terminal element 201024453 Symmetrical, of course, the terminal elements (3a)~(3e) can be designed in the form of coaxial lines, and the terminal members (3a)~(3c) should be designed in the form of metal cylinders. This - the metal cylinders are each used One end is connected to the electrode bodies (1a) to (lc) (for example, by tandem) to form a conductive method. The trowel electrode (1 a) (Shu c) VHF power should be supplied at the same phase. In one embodiment, each of the partial electrodes (1 a) ~ (1 c) to form a respective generator vHF

導電連接。在另-實施例’該部分電極（la)〜（U)與-共同 的VHF產生器呈導電連接（宜並聯）。 部分電極（la)〜（le)各設在—介電式「埋人元件」⑺ 中。該埋入元件的一些部分也可由空氣形成。電極體的前 :有一個大面積的電極面1由埋人^件⑺露出，且在該 c乍時係對所要處理的基材設成對立，且-般與電漿 此外設有 遐罩元件⑺’它讓電極面露出’該遮罩元 :。…—個部分電極〇a)〜⑽的—個或數個連同該埋 入元件（7)—齊圍住。 本發明的其他特點係為以下之,丨 這些特點為： •電極(l)(la)(lb)(lc)的長度比寬度大 •該電極設成平行於其長邊 宜在氧化鋁陶瓷 •埋入到真空通過的介電質（7)中 中，或 KER 21，KER 3 30 或類似物， •二者都一齊被導電的遮罩（6)圍住 9 201024453 •具有可動的對立電極（11)，它帶有一基材（12)且具有 一遮罩元件（2)(6)， •藉著對立電極（1 1)的運動，可將此電極與遮罩（2)(6) 經由接點（13)連接成導電的方式， •含有電極（1)的氣體分配件（14)(15)，它們具有氣體供 應手段（15a)， •介質管路（16)(16a) •水冷卻手段（18) •***真空容納件〇9)中 •在相鄰的個別電極（la)(lb)之間有狹的（約i毫米寬 度）泵槽孔（20)(20a)，它們在介電質（7)和外遮罩（6)中延續。 圖未示的泵接到真空容納部（丨9)。 •介電質（7)之朝向電漿室（丨00)的那個面利用金屬板（9) 蓋住並利螺絲（9a)或類似物保持住。 •在該位於真空容納部外的VHF電路的匹配網路，由 放大器 '振盪器、組合器（K〇mbiner)等構成。 在圖2中顯示在二相鄰的部分電極（la)及（lb)之間的一 缝隙中的一區域，它具有一泵槽孔（1〇)，其中在介電質的一 遮蓋件（9)中形成一泵槽孔（20)(20a)。 在本發明的一較佳實施例（示於圖3中），該電極面 設計成氣體分配裝置的氣體出口板（15)的形式，其中該氣體 出口板（15)具有氣體出口開口（15a)，程序氣體及/或反應氣 體了、’’i 4氣體出口開引入該真空室或電極與對立電極之間 的區域中。 201024453 圖4顯示本發明另一實施例’其中該端子元件（3)設在 部分電極（1)的電極體的後側（4〇)的端面（5〇)的區域中。端子 元件（3)設計成真空通過件形式以及共軸導線的形式，且利 用密封元件（8)固定在真空室壁（19)中的一介電質（陶瓷）（7a) 中。在此，部分電極（1)被遮罩元件（6)圍住，該遮罩元件與 該共軸線路（3)的外導線的一部分連接成導電的方式。 圖6中，一第一端子元件〔它設計成一銅片形式的帶 Q形線路（24)形式〕設在電極體後側（40)上在電極（1)的電極體 的一端側（50)附近。一帛二端子元件（它設計成帶狀線路形 式，在圖中未示）耦合在電極體後側上在一第二端側附近。 此外，一帶形線路的一第一極可與至少一端子元件連 接，而該帶形線路的一第二極與該部分電極的一個對立電 極連接，其中該帶形線路接到一個對稱化元件雙帶形線 路可接到一個共軸線路（它與一 VHF產生器連接）。 該真空通過件也可特別做成對稱的雙帶形線路的形 ©式。一個極與該電極連接，另一極與對立電極連接，基材 帶有這些電才亟。在該真空通過件附近在空氣側上對稱元件 放入（它也SBalun)，該對稱元件將雙帶式線路接到共軸 一“ ％ J恤里姐，因此直流頻 平C脈波）（Gleichtakt)的千媒可.士，丨、_ , 伸☆ ^ 擾減少° ^則這類干擾就 很谷易形成，因為平行板反應 係種易化（entarten )的 線（二借路’其上可形成直流頻率。直流頻率干擾和接地 -備接地端）造成-種電流回路：從設備接地端—二Conductive connection. In the other embodiment, the partial electrodes (la) to (U) are electrically connected to the common VHF generator (preferably in parallel). The partial electrodes (la) to (le) are each disposed in a dielectric "buried component" (7). Some portions of the buried element may also be formed from air. The front side of the electrode body: a large-area electrode surface 1 is exposed by the buried member (7), and in the case of the c乍, the substrate to be treated is opposed, and the plasma is further provided with a mask member. (7) 'It makes the electrode surface exposed' the mask element:. One or several of the partial electrodes 〇a) to (10) are enclosed together with the buried component (7). Other features of the present invention are as follows: 电极 These features are: • The length of the electrode (l) (la) (lb) (lc) is greater than the width • The electrode is set parallel to its long side should be in the alumina ceramic • Buried into the vacuum through the dielectric (7), or KER 21, KER 3 30 or the like, • Both are surrounded by a conductive mask (6) 9 201024453 • With movable opposite electrodes ( 11), it has a substrate (12) and has a mask element (2) (6), • through the movement of the counter electrode (1 1), the electrode and the mask (2) (6) can be The contacts (13) are connected in a conductive manner, • the gas distribution members (14) (15) containing the electrodes (1), which have a gas supply means (15a), • the medium line (16) (16a) • water cooling Means (18) • Inserted into the vacuum containing member 〇 9) • There is a narrow (about i mm width) pump slot (20) (20a) between adjacent individual electrodes (1) (lb), which are interposed The electrical (7) and outer mask (6) continue. A pump (not shown) is connected to the vacuum housing (丨9). • The side of the dielectric (7) facing the plasma chamber (丨00) is covered with a metal plate (9) and held by a screw (9a) or the like. • The matching network of the VHF circuit outside the vacuum housing is composed of an amplifier 'oscillator, combiner (K〇mbiner), etc. An area in a gap between two adjacent partial electrodes (1a) and (lb) is shown in Fig. 2, which has a pumping slot (1〇) in which a covering member of the dielectric ( A pump slot (20) (20a) is formed in 9). In a preferred embodiment of the invention (shown in Figure 3), the electrode face is in the form of a gas outlet plate (15) of a gas distribution device, wherein the gas outlet plate (15) has a gas outlet opening (15a) , the program gas and/or the reaction gas, the ''i 4 gas outlet' is introduced into the vacuum chamber or the region between the electrode and the counter electrode. 201024453 Fig. 4 shows another embodiment of the present invention in which the terminal member (3) is provided in the region of the end face (5 〇) of the rear side (4 〇) of the electrode body of the partial electrode (1). The terminal element (3) is designed in the form of a vacuum through piece and a coaxial wire, and is fixed in a dielectric (ceramic) (7a) in the vacuum chamber wall (19) by a sealing member (8). Here, part of the electrode (1) is enclosed by a masking element (6) which is connected in a conductive manner to a part of the outer conductor of the coaxial line (3). In Fig. 6, a first terminal member (which is designed in the form of a copper strip in the form of a Q-shaped line (24)) is provided on the rear side (40) of the electrode body at one end side (50) of the electrode body of the electrode (1). nearby. A second terminal member (which is designed in the form of a strip line, not shown) is coupled to the rear side of the electrode body in the vicinity of a second end side. In addition, a first pole of the strip line may be connected to at least one terminal element, and a second pole of the strip line is connected to an opposite electrode of the partial electrode, wherein the strip line is connected to a symmetrical element The strip line can be connected to a coaxial line (which is connected to a VHF generator). The vacuum passage member can also be made in particular as a symmetrical double-belt line. One pole is connected to the electrode and the other pole is connected to the counter electrode, and the substrate has these electrodes. A symmetrical element is placed on the air side in the vicinity of the vacuum passage (it is also SBalun), which connects the double-belt line to a coaxial "% J-shirt, so DC-frequency C-pulse" (Gleichtakt) The thousand media can be used, 丨, _, 伸 ☆ ^ disturbance reduction ° ^ then this kind of interference is very easy to form, because the parallel plate reaction is easy to enter (entarten) line (two borrowed roads) Forming DC frequency. DC frequency interference and grounding - preparation grounding terminal) - Current loop: slave device ground - two

II 201024453 電極—接到這些電極的二個端子元件—接地匹配箱 (Matchbox)/產生器—回到設備接地端。這類電流回路傳輸 VHF功率，該VHF功率會造成一種寄生性電漿，此電漿在 真空谷納部（Vakuumrezipient )内非常不當地在電極之間 的空間外灼燒。 圖8以簡化圖顯示一個用於處理扁平基材的電漿 裝置〔反應器（1 00)〕。舉例而言，反應器（丨〇〇)可設計成 PECVD反應器形式。一種為RF電壓設計之類似裝置述於 DE 10 2007 022 252.3，其全部内容可供參考。但本發明之❹ 扁平基材VHF電聚處理裝置相較於de 1〇 2007 022 252.3 的習知裝置的特點在於：該電漿電極裝置至少有一電漿電 極，其中該端子元件至少有一個設計成VHF真空通過元件 的形式。 反應器（100)包含一程序室（1〇9)，該程序室具有一電極 (105)和接地的對立電極（1〇7)，該二電極設計成產生一電 衆以將-個或數個扁平基材（i 〇 3)的一要處理的表面作4 理。電極（105)可接到—RF電壓源（不詳示）以在程序室（1〇9) 中產生一電場。基材（丨〇3)就位在接地的對立電極（1〇7)正前 方其中，虽然電極也可作其他方式的配接。電極（1〇5)(1〇7) 且°又β十成用於在製造高效率薄層太陽能模組（例如用於非 曰曰質或微結晶的石夕薄層太陽電池者）時在處理或加工步驟 將面積至少-平方米的基材作處理。 電極（1〇5)(107)形成程序室（109)的二個對立的壁。程序 室（1〇9)位在—真空室（1η)中，該真空室（ιιι)有—充電及放 12 201024453 電開口（49) ’該開口可用一封閉裝置（135)封閉-封閉裝置係 為選項式者。真空室⑴”由反應器(1〇〇)的一殼體⑴3)形 成。為了對環境造成密封，設有密封件（丨15)。 真空室（111)可具有任何空間形狀，例如具有圓形或多 角形（特別是長方形）橫截面者。舉例而言程序室（丨〇9) 設計成扁平的平面六面體（Parallelepiped )形式在另一 實施例中，真空室（111)本身為程序室（1〇9)。 e 冑極（1()5)設在—真空室（⑴）的—保持構造（131)中，該 保持構造由殼體後壁（133)形成。為此，該電極（1G5)設在保 持構造(131)的一凹隙中且利用一介電質與真空室壁隔開， 一條泵通道（129)由保持構造（131)中的一槽形第二凹隙 成。 、 基材（103)利用對立電極（107)藉著一保持件（134)容納 在其朝向電極（1〇5)的那個前側上。 為了將氣態材料引入及移除，故設有習知的手段，其 ❹巾該氣態材料舉例而言可為氬㈣及，或氫（h2)。氣態材料 特別可為一可活化的氣體種類（反應氣體）的量。所用之 氣體種類宜為一種前身物（Precursor )氣體，它在電漿中形 成可產生覆層的游離基（Radikal)。該前身物宜為矽烷 (SlH4)，該矽烷在電聚中受電子義擊形成覆層的前身= S1H3在另—實施例中，所用之可活化的氣體種類為—種淨 化性氣體，例如NF3。氣態材料的加入及除去的方式 列或平行進行者。 所用之加入氣態材料的手段係為一種具有一通道幻） 13 201024453 的覆層材料源（119) ’它接到一氣體分配裝置。氣體分配裝 置整合到電極（105)中’但也可採另一實施例與電極分別形 成’氣體分配裝置宜設計成使基材（103)能均勻供以氣體種 類。該多數出口開口宜均勻分佈在氣體出口板（125)，因此 該氣態材料均勻分佈導入程序室（109)中。 當然該用於加入氣態材料的手段也可設計成與圖8所 示者不同，氣體分配裝置（125)亦然。 反應器（100)包含一裝置以改變極之間的相對距離，該 裝置在圖8中的實施例設計成移動銷〇41)形式。該移動銷 (141)可利用一支承板（143)在真空室（111)中作直線運動。移 動銷（141)與對立電極（1〇7)的後侧〔該後侧背向電極（1〇5)〕 連接。與移動銷（141)相關的驅動器在圖中未示。 圖8的示圖中’對立電極（1〇7)在作電漿處理時蓋住該 凹隙。該對立電極宜具有接點元件（138)以和「保持構造」 的相關之接點元件（1 37)接觸，因此對立電極在作電漿處理 時係處在真空室（111)的電位。 依本發明，在另一實施例中，對立電極（1〇7)有一個圖 8中未示的容納裝置以容納扁平基材，它設計成使該基材至 少在所要處理或處理過的表面在作處理時朝向下，設成對 水平方向成一角度α，其大小在〇。〜9〇。之間的範圍。在這 種基材的設置方式，基材之所要處理或處理過的（特別是 要鍍覆的或鍍覆過的）表面的污染情事可避免或至少可減 少，因為相關的粒子在重力場中向下沈且因此從受威脅的 表面除去。當然，在本發明另一實施例中，所要處理的表 14 201024453 面也可朝向上。 在具有基材（103)程序室（109)充電或放電時，電極（1〇5) 與對立電極（107)之間有較大距離，而基材（1〇3)在作處理 時’則有第二種較小的距離。 在作電漿處理時，利用一高頻電壓在電極（1〇5)與對立 電極（107)之間〔更準確地說’係在氣體出口板（125)與該保 持在對立電極（105)上的基材（1〇3)之間〕的區域激發出一電 瘳漿（圖8中未示）。此外，為了作電漿處理，另外宜將反 應氣體均勻分佈在氣體出口板（125)的範圍中導入電聚中， 反應氣體呈活化的氣體種類的方式存在所要處理的基材氣 體出口板（125)之間的電漿放電區的一彷彿中性 (quasi-neutral)的電漿團（Plasmabulk)中，此電锻團有 較高電子密度，利用這種活化氣體種類施加到基材（1〇3)之 所要處理的表面。 圖9顯示該呈圓柱形對稱形狀的共軸端子（3a)〜（3d)固 φ 定在一直角棱柱構造組上。 在圖10中所示的實施例’在二個相鄰的部分電極 (la)(lb)之間設有一金屬分離元件（1〇5)，且宜為_銘金屬 片’它宜與遮罩元件（2)及/或接地線連接成導電方式。部 分電極（105)也可設有端子元件以供應電力，該端子元件不 設在端侧之上或附近。分離元件（105)的端側宜相對於電極 面錯開設置，因此它不會突伸超出此表面，而係相對於此 表面退縮。這種錯開的距離宜相當於距下一個分離元件的 距離。 15 201024453 這種方式設在部分電極之間的縫隙中的分離元件（它 由導電材料構成）可使部分電極之間的相位關係更穩定， 特別是可減少用於激發電漿的電波或磁波（它們施在電極 上）之間的破壞性干涉，且因此可形成均句的電浆。在另 一實施例中，該數個分離元件中至少有—個分離元件設有 開口，可使流體材料較順利通過。在此情形，分離元件設II 201024453 Electrodes—The two terminal components connected to these electrodes—the grounding matchbox (Matchbox)/generator—return to the device ground. This type of current loop transmits VHF power, which causes a parasitic plasma that burns very improperly outside the space between the electrodes in the Vakuumrezipient. Figure 8 shows, in a simplified view, a plasma apparatus [reactor (100)] for processing a flat substrate. For example, the reactor (丨〇〇) can be designed in the form of a PECVD reactor. A similar device designed for RF voltage is described in DE 10 2007 022 252.3, the entire contents of which are incorporated herein by reference. However, the conventional apparatus of the flat substrate VHF electropolymerization apparatus of the present invention is characterized in that the plasma electrode apparatus has at least one plasma electrode, wherein at least one of the terminal elements is designed to be The VHF vacuum passes through the form of the component. The reactor (100) comprises a program chamber (1〇9) having an electrode (105) and a grounded counter electrode (1〇7), the two electrodes being designed to generate a group of electricity to be one or several A flat surface of the flat substrate (i 〇 3) is treated as a surface. The electrode (105) can be connected to an -RF voltage source (not shown) to generate an electric field in the program chamber (1〇9). The substrate (丨〇3) is located just in front of the grounded opposite electrode (1〇7), although the electrode can be mated in other ways. Electrode (1〇5) (1〇7) and °β10% are used in the manufacture of high-efficiency thin-film solar modules (such as those used in non-enamel or microcrystalline Shixi thin-layer solar cells) The treatment or processing step treats a substrate having an area of at least - square meters. Electrodes (1〇5) (107) form two opposing walls of the program chamber (109). The program chamber (1〇9) is located in the vacuum chamber (1η), the vacuum chamber (ιιι) has - charging and discharging 12 201024453 electric opening (49) 'The opening can be closed by a closing device (135) - the closing device system For the option. The vacuum chamber (1)" is formed by a casing (1) 3) of the reactor (1). In order to seal the environment, a seal (丨15) is provided. The vacuum chamber (111) may have any spatial shape, for example, having a circular shape. Or a polygonal (especially rectangular) cross section. For example, the program chamber (丨〇9) is designed in the form of a flat planar hexahedron (Parallelepiped). In another embodiment, the vacuum chamber (111) itself is a program room. (1〇9) e The drain (1()5) is provided in the - holding structure (131) of the vacuum chamber ((1)), which is formed by the rear wall (133) of the casing. (1G5) is disposed in a recess of the holding structure (131) and separated from the vacuum chamber wall by a dielectric, and a pump passage (129) is formed by a groove-shaped second recess in the retaining structure (131) The substrate (103) is housed on the front side of the electrode (1〇5) by a holding member (134) by means of a holding member (107). In order to introduce and remove the gaseous material, it is known. The means for the gaseous material may be, for example, argon (tetra) and or hydrogen (h2). The gaseous material may especially be The amount of activated gas (reaction gas). The type of gas used is preferably a precursor gas which forms a free radical (Radikal) in the plasma. The precursor is preferably decane (SlH4). The precursor of the decane formed by electrons in electropolymerization to form a coating = S1H3 In another embodiment, the type of activatable gas used is a purifying gas, such as NF3. The addition and removal of gaseous materials The mode of joining or paralleling. The means for adding gaseous material is a source of cladding material (119) with a channel of illusion 13 201024453 'It is connected to a gas distribution device. The gas distribution device is integrated into the electrode (105) However, another embodiment may be formed separately from the electrodes. The gas distribution device is preferably designed such that the substrate (103) can be uniformly supplied with a gas species. The plurality of outlet openings are preferably evenly distributed on the gas outlet plate (125), thus The gaseous material is uniformly distributed into the program chamber (109). Of course, the means for adding the gaseous material can also be designed to be different from that shown in Fig. 8, as is the gas distribution device (125). The reactor (100) includes a means for varying the relative distance between the poles, the embodiment of which is designed in the form of a moving pin 41). The moving pin (141) can be utilized with a support plate (143) The linear movement is performed in the vacuum chamber (111). The moving pin (141) is connected to the rear side of the counter electrode (1〇7) [the rear side back electrode (1〇5)]. The drive associated with the moving pin (141) The opposite electrode (1〇7) in the diagram of Fig. 8 covers the recess during the plasma treatment. The counter electrode preferably has a contact element (138) and a "holding structure". The associated contact element (1 37) is in contact, so that the counter electrode is at the potential of the vacuum chamber (111) during the plasma treatment. According to the invention, in another embodiment, the counter electrode (1〇7) has a receiving means, not shown in Fig. 8, for accommodating a flat substrate which is designed such that the substrate is at least on the surface to be treated or treated. When it is processed, it faces downward, and is set to an angle α to the horizontal direction, and its size is 〇. ~9〇. The range between. In the manner in which such a substrate is disposed, contamination of the surface of the substrate to be treated or treated (especially to be plated or plated) can be avoided or at least reduced because the associated particles are in the gravitational field. Sinks down and is therefore removed from the threatened surface. Of course, in another embodiment of the invention, the surface of the table 14 201024453 to be processed may also face upward. When charging or discharging the substrate (109) with the substrate (103), there is a large distance between the electrode (1〇5) and the opposite electrode (107), and the substrate (1〇3) is processed. There is a second smaller distance. In the plasma treatment, a high-frequency voltage is used between the electrode (1〇5) and the opposite electrode (107) (more precisely, the gas exit plate (125) is attached to the opposite electrode (105). The area between the upper substrate (1〇3) excites an electric mash (not shown in Figure 8). Further, in order to perform the plasma treatment, it is preferable to uniformly distribute the reaction gas in the range of the gas outlet plate (125) to introduce electropolymerization, and the reaction gas is in the form of the activated gas species, and there is a substrate gas outlet plate to be processed (125). In a quasi-neutral plasma mass (Plasmabulk) between the plasma discharge zones, the electric forging mass has a higher electron density and is applied to the substrate using the activated gas species (1〇) 3) The surface to be treated. Fig. 9 shows that the coaxial terminals (3a) to (3d) of the cylindrically symmetrical shape are fixed on the right-angle prism structure group. In the embodiment shown in Fig. 10, a metal separating element (1〇5) is provided between two adjacent partial electrodes (1b), and it is preferably a metal sheet. The component (2) and/or the ground wire are connected in a conductive manner. The partial electrode (105) may also be provided with a terminal member for supplying electric power, and the terminal member is not provided on or near the end side. The end side of the separating element (105) is preferably offset relative to the electrode face so that it does not protrude beyond the surface and is retracted relative to the surface. This staggered distance should be equivalent to the distance from the next discrete element. 15 201024453 This type of separation element, which is formed in the gap between the partial electrodes (which is made of a conductive material), makes the phase relationship between the partial electrodes more stable, in particular, reduces the electric or magnetic waves used to excite the plasma ( They exert a destructive interference between the electrodes, and thus can form a uniform plasma. In another embodiment, at least one of the plurality of discrete elements is provided with an opening to allow smooth passage of fluid material. In this case, the separation component is set

G 计成孔金屬片或金屬絲格柵的形式，如果分離元件設有貫 通開口，則較容易形成均勻的電漿。 【圖式簡單說明】 圖1係本發明之用於電漿處理的裝置的一剖面圖，它 具有二個部分電極； 圖2係'二個相鄰的部分電極之間的一區 具有一泵槽孔； =43:類似圖8之視圏之沿圖1的A-A的剖視圓； & 圖4係另-用於電漿處理的裝置的剖視圖； 系從供應線路接到-個部分電極的連線的視圖； 二係利用-帶狀導線接到一個部分電極的視圖； 栗管路具有一泵槽孔； ]的栗目路的不圖，該 2 8係具有-個部分電極的電漿裝置的視圖，· 9係—電極設置沿圖！的線B_G is in the form of a hole metal sheet or a wire grid, and if the separation member is provided with a through opening, it is easier to form a uniform plasma. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view of a device for plasma treatment of the present invention having two partial electrodes; Figure 2 is a pump having a pump between two adjacent partial electrodes Slot; =43: a cross-sectional circle similar to AA of Fig. 1 like Fig. 8; & Fig. 4 is a cross-sectional view of another apparatus for plasma processing; is connected to a partial electrode from a supply line a view of the connection; the second system utilizes a view of the strip conductor connected to a partial electrode; the chestnut pipeline has a pump slot; and the chestnut road does not, the 28 series has a partial electrode View of the slurry device, · 9 series - electrode settings along the map! Line B_

圖係-電極設置沿著平行於圖二面的剖面圖， 的平面的剖„。 科㈣…时㈣線S-S 16 201024453Figure-electrode is set along a section parallel to the cross-section of the figure, the plane of the section „. 科(四)...时时时四线 S-S 16 201024453

【主要元件符號說明】 (la)(lb)(lc)(ld) 部分電極 (2) 遮罩元件（外導線） (3a)〜（3c) 端子元件 (4) 封入板（容納侧） (5) 封入板（匹配侧） (6) 遮罩元件（外導線） (7) 介電質埋入元件 (7a)(7b)(7c) 介電質 (8) 密封元件 (9) 介電質的遮蓋件（金屬板） (9a) 固定元件 (10) 對應於遮蓋件（9)的泵槽孔 (11) 對立電極 (12) 基材 (13) 接點彈簧 (14) 氣體分配室 (15) 氣體分配板（氣體出口板） 體前側 (15a) 氣體出口開口 (16)(16a) 介質管路 (17) 氣體供應件 (18) 介質管路（水冷卻手段） ，電極 17 201024453 (19) 真空室壁（真空容納部） (19a) 真空室壁（真空容納部） (19b) 補強件 (20)(20a) 泵槽孔 (22) 棒 (23) 盤彈簧 (24) 銅片（帶形電路） (25) 膜 (29) 遮蓋件 (30) 泵通道 (35) 榫 (40) 電極體後側 (50a)〜（50c) 端侧 (100) 電漿室 (101) 電漿裝置（反應器） (103) 基材 (105) 第一電極 (1.07) 第二電極（對立電極） (109) 程序室 (HI) 真空室 (113) 殼體 (115) 密封件 (118) 真空管路 (119) 覆層材料源[Description of main component symbols] (la)(lb)(lc)(ld) Partial electrode (2) Mask element (outer wire) (3a) to (3c) Terminal component (4) Enclosure plate (accommodating side) (5 ) Enclosure plate (matching side) (6) Mask element (outer wire) (7) Dielectric embedding element (7a) (7b) (7c) Dielectric (8) Sealing element (9) Dielectric Cover (metal plate) (9a) Fixing element (10) Pump slot (11) corresponding to cover (9) Counter electrode (12) Base material (13) Contact spring (14) Gas distribution chamber (15) Gas distribution plate (gas outlet plate) Body front side (15a) Gas outlet opening (16) (16a) Media line (17) Gas supply (18) Media line (water cooling means), electrode 17 201024453 (19) Vacuum Chamber wall (vacuum housing) (19a) Vacuum chamber wall (vacuum housing) (19b) Reinforcing member (20) (20a) Pump slot (22) Rod (23) Disc spring (24) Copper plate (band circuit (25) Membrane (29) Cover (30) Pump passage (35) 榫 (40) Electrode body rear side (50a) ~ (50c) End side (100) Plasma chamber (101) Plasma unit (reactor ) (103) Substrate (105) An electrode (1.07) a second electrode (opposite electrode) (109) program chamber (HI) of the vacuum chamber (113) of the housing (115) seal (118) vacuum line (119) source of coating material

18 20102445318 201024453

(121) 表面 (123) 通道 (125) 氣體出口板 (127) 封閉裝置 (129) 泵通道 (131) 隔離壁（保持構件） (133) 殼體後壁 (134) 保持件 (135) 封閉裝置 (137) 接點位置 (138) 接點位置 (139) 雙箭頭 (141) 移動銷 (143) 支承板 (145) 殼體壁 (147) 雙箭頭 (149) 開口 (150) 隔離元件 (151) 端側 19(121) Surface (123) Channel (125) Gas outlet plate (127) Closure (129) Pump channel (131) Wall (holding member) (133) Housing rear wall (134) Holder (135) Closure (137) Contact position (138) Contact position (139) Double arrow (141) Moving pin (143) Support plate (145) Housing wall (147) Double arrow (149) Opening (150) Isolation element (151) End side 19

Claims (1)

201024453 先提申請時所送原文申請範圍內容一致的中文申請範圍 七、申請專利範圍： L種特咼頻電漿電極，具有一長形電極體，該電極體 且《•又"t成電漿方式且有一電極面，該電極面與至少二個端 子兀件連接或可連接，以供應電力，其中至少一第一端子 元件耦合在該電極體的一第一端側之上或附近，且至少一 第二端子元件耦合在該電極體的一第二端側之上或附近， 且該電極宜設在一個由介電材料構成的埋入元件中該埋201024453 First application for the scope of application of the original application scope of the original application range VII, the scope of application for patents: L kinds of special frequency electrode electrode, with a long electrode body, the electrode body and "• also " t into electricity And an electrode surface connected to or connectable with at least two terminal members for supplying electric power, wherein at least one first terminal element is coupled on or near a first end side of the electrode body, and At least one second terminal element is coupled on or near a second end side of the electrode body, and the electrode is preferably disposed in a buried component made of a dielectric material. 入元件讓電極面露出，且宜設有—個使該電極面露出的遮 罩元件，該遮罩元件將該電極連同該埋入元件一齊包圍 住，其特徵在： 知子元件至；有一個設計成特高頻真空通過元件 △如甲請專利範圍第 該二端子元件至少有一個設計成一種構件，該構件 有該電極體，該埋入元件及/或該遮罩元件。 3·如前述申請專利範圍任一項之特高頻電襞電極，The component enters the electrode surface, and is preferably provided with a masking element for exposing the electrode surface, the masking element enclosing the electrode together with the embedded component, characterized by: a sub-component to; a design The utility model has at least one of the two terminal elements designed as a component, the component having the electrode body, the embedded component and/or the mask component. 3. The special high frequency electric electrode according to any one of the preceding claims, 中： 至少一端子元件設計成一共轴導線的部分 線的部分。 # # 4·如前述申請專利範圍任一項之特高頻電 中： 該遮罩元件至少與一構成一端子元件的共轴導 外導線的一部分連接成導電的方式或該遮罩元件 /帶狀導的一部分。 V % 20 201024453 5, 如前述申請專利範圍任一項之特古 付呵頻電漿電極，其 中： -帶狀導線的-第-極與至少一個料元件連接或可 連接該帶狀導線的-第二極可與該電漿電極的一個對立電 極連接’其中該帶狀導線宜可接到一對稱化元件。 6. 如前述申請專利範圍任一項之特古 ^〜付π頻電漿電極，其 中： ©該電極至少有一氣體出口開口以蔣起 Λ將程序氣體供應作電 漿處理。 中： 7.如前述申請專利範圍任一項之特高頻電漿電極，其 至少-個真空通過元件至少包含—氣體分配裝置的一 氣體供應管路及/或-介質管路以供應流體介質或將流體 介質導離。Medium: At least one of the terminal elements is designed as part of a portion of a coaxial wire. ##4. In the special high frequency power according to any one of the preceding claims, the mask element is connected to at least a portion of the coaxial outer conductor forming a terminal element to be electrically conductive or the mask element/belt Part of the guide. V % 20 201024453 5, according to any of the preceding claims, the Teguchi frequency plasma electrode, wherein: - the - pole of the strip conductor is connected to or connectable to the strip conductor - The second pole can be coupled to an opposite electrode of the plasma electrode, wherein the ribbon conductor is preferably connectable to a symmetrical element. 6. The Tegu-fu π-frequency plasma electrode according to any one of the preceding claims, wherein: the electrode has at least one gas outlet opening for supplying the program gas as a plasma treatment. 7. The ultra high frequency plasma electrode according to any one of the preceding claims, wherein at least one vacuum passage element comprises at least a gas supply line and/or a medium line of the gas distribution device to supply the fluid medium Or direct the fluid medium away. 8.-種特高頻電漿處理裝置，用於處理扁平基材，其中 -基材可設在-真S室中在-電極裝置與—個對立電之 間，且可在至少-電锻電極裝置與—個對立電極之間的區 域中激發電漿放電，其特徵在： 該電漿電極裝置至少有一個如前述 項的電漿電極。 申請專利範圍任一 8項之特高頻電漿處理裝置，其 9.如申請專利範圍第 中： 高頻真空通過元件 至少一電聚電極利用一個設計成特 的形式的端子元件固定在一真空室壁上 21 201024453 9項之特高頻電漿處理裝 10.如申請專利範圍第8或第 置，其中： 該電㈣極裝置至少有二個如中請專利範㈣卜7項 任一項的特頻電槳電極，互相鄰接設置或可互相鄰接設 置’且該二個電漿電極的電極體 电楓遛宜具有互相共同面的電極 面及互相平行的縱側。 1 1.如申請專利範圍第10項 古 •符冋頻電漿處理裝置，豆 中： '、 在該二電極體的縱側 於1 〇毫米，且宜少於8. A special high frequency plasma processing apparatus for processing a flat substrate, wherein - the substrate can be disposed between the -electrode device and the opposite electrode in the -true S chamber, and at least - electric forging The plasma discharge is excited in a region between the electrode device and the counter electrode, characterized in that: the plasma electrode device has at least one plasma electrode as described above. Patent application No. 8 of the UHF plasma processing apparatus, 9. In the scope of the patent application: High-frequency vacuum-passing element at least one electro-converging electrode is fixed to a vacuum by a terminal element of a specially designed form 21 on the wall 21 201024453 9 items of high-frequency plasma processing equipment 10. If the scope of patent application is 8 or the first, wherein: the electric (four) pole device has at least two of the patents (four) The special-frequency electric paddle electrodes are disposed adjacent to each other or may be disposed adjacent to each other', and the electrode body of the two plasma electrodes preferably has mutually opposite electrode faces and parallel longitudinal sides. 1 1. If the patent application scope is 10th, the ancient symbol-frequency plasma processing device, the bean: ', on the longitudinal side of the two-electrode body is 1 mm, and preferably less than 該二個電漿電極設成互相間隔， 之間有一縫隙，其縫隙寬度宜為至少 5毫米。 中 12·如申請專利範圍第11項之特高頻《處理裝置，其 在該電極體之間的縫隙中凡 、T且《ot有s又计成泵縫隙的泵開 口，以將用於作電漿處理的程序氣體導離。 項之特高頻電漿處理裝 ◎ 13.如申請專利範圍第u或12 置，其中： 在該縫隙中設有一導雷沾八缺_ 導電的刀離TL件，該分離元件宜與該 電物料連接或可連接。 14· 一種特高頻裝置，用於將卮 ^ ^ 用於將扁千基材特頻電漿處理， 其中該基材可設土 一電極梦署命. €極裝置與一個對立電極之間的一真 空室中，且在電極與對立雷杌 、 電極之間的—區域中可激發電漿 放電，其特徵在： 至乂、有—個部分電極輿Φ -加山 興至V一個端子元件連接成導電 22 201024453 方式以供應電力’且在二個相鄰的部分電極之間的一縫隙 之間设有一分離元件，該分離元件該電接地端連接或可與 該接地端連接。 ⑩ 15.—種將扁平基材作特高頻電漿處理的方法，其中該 電聚處理為一種析出程序或蝕刻程序或表面改質程序，且 該基材設在一真空室中在一個具有至少—冑聚電極的電漿 電極裝置和一個對立電極之間且在該電漿電極與該對立電 極之間的一區域中激發電製放電，其特徵在： 的電漿 利用至少一個申請專利範圍第丨〜第7項任— 電極將電力供到該電漿。 1 6·—種扁平基材的特高頻電漿處理方法， ^ *7 在矛丨| 種申請專利範圍第8至第14項任一項的高裝。 17.如申請專利範圍第U至第14項中任— 其中： . $ <方法， 5亥縫隙寬度選設成小於電的暗室距離。 18.如申請專利範圍第U至第14項中任 其中： 項之方法， 聚放電 該分離元件距該縫隙邊緣的距離選設成小於 的暗室距離。 八、圖式： (如次頁） 23The two plasma electrodes are arranged to be spaced apart from each other with a gap therebetween, and the gap width is preferably at least 5 mm. In the application of the special high-frequency "processing device of the eleventh article of the patent scope, in the gap between the electrode body, T and "ot s have the pump opening of the pump gap, which will be used for The plasma treated process gas is conducted away. The special high-frequency plasma processing equipment of the item ◎ 13. If the application scope is in the range of u or 12, wherein: a guide is provided in the gap, and a conductive knife is separated from the TL, and the separating element is suitable for the electric Material connections or connections. 14. A UHF device for treating 扁 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ In a vacuum chamber, and in the region between the electrode and the opposite thunder and the electrode, the plasma discharge can be excited, and the characteristics are as follows: to 乂, a partial electrode 舆Φ - Jiashanxing to V one terminal element is connected Conductive 22 201024453 mode to supply power 'and a separation element between a gap between two adjacent partial electrodes, the separation element of which is connected or connectable to the ground. 10 15. A method for treating a flat substrate by ultra-high frequency plasma treatment, wherein the electropolymerization process is a precipitation process or an etching process or a surface modification process, and the substrate is disposed in a vacuum chamber in one At least - a discharge between the plasma electrode means of the concentrating electrode and an opposite electrode and between the plasma electrode and the counter electrode, characterized in that: the plasma utilizes at least one patent application range Dijon ~ Item 7 - The electrode supplies electricity to the plasma. 1 6·- a high-frequency plasma processing method for a flat substrate, ^ *7 in the high-loading of any of the spears of the patent application range 8 to 14. 17. As claimed in paragraphs U to 14 of the patent application - wherein: . $ < method, the width of the gap is selected to be less than the darkroom distance of electricity. 18. The method of claim U, wherein the distance of the separating element from the edge of the slit is selected to be less than the darkroom distance. Eight, the pattern: (such as the next page) 23