DE10146227A1 - Siliciumnitrid-Produkt - Google Patents
Siliciumnitrid-ProduktInfo
- Publication number
- DE10146227A1 DE10146227A1 DE10146227A DE10146227A DE10146227A1 DE 10146227 A1 DE10146227 A1 DE 10146227A1 DE 10146227 A DE10146227 A DE 10146227A DE 10146227 A DE10146227 A DE 10146227A DE 10146227 A1 DE10146227 A1 DE 10146227A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon nitride
- substrate
- sintered body
- weight
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 416
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 399
- 239000000843 powder Substances 0.000 claims abstract description 120
- 238000005245 sintering Methods 0.000 claims abstract description 62
- 239000002245 particle Substances 0.000 claims abstract description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 39
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 14
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 12
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 11
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 10
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 190
- 238000000034 method Methods 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000003746 surface roughness Effects 0.000 claims description 23
- 239000002105 nanoparticle Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 17
- 239000002344 surface layer Substances 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000007858 starting material Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 238000013001 point bending Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 238000003917 TEM image Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000010949 copper Substances 0.000 description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 32
- 239000000463 material Substances 0.000 description 31
- 239000012071 phase Substances 0.000 description 27
- 238000005219 brazing Methods 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 239000011812 mixed powder Substances 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 239000011148 porous material Substances 0.000 description 10
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 230000035939 shock Effects 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000005452 bending Methods 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 9
- 238000000227 grinding Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005336 cracking Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005488 sandblasting Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005422 blasting Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000009661 fatigue test Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 238000004873 anchoring Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 3
- 229960001826 dimethylphthalate Drugs 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 208000025599 Heat Stress disease Diseases 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007719 peel strength test Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- -1 silicon imide Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910018516 Al—O Inorganic materials 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 241000589614 Pseudomonas stutzeri Species 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000003763 resistance to breakage Effects 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000009628 steelmaking Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
- C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
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Abstract
Description
Vermischen von 1-50 Gew.-teilen eines ersten Siliciumnitrid- Pulvers, das einen Anteil an β-Teilchen von 30-100%, einen Sauerstoffgehalt von 0,5 Gew.-% oder weniger, eine durchschnittliche Teilchengröße von 0,2-10 µm und ein Seitenverhältnis von 10 oder weniger aufweist, mit 99-50 Gew.-teilen eines α-Siliciumnitrid-Pulvers mit einer durchschnittlichen Teilchengröße von 0,2-4 µm; und das Sintern des erhaltenen Gemisches bei einer Temperatur von 1800°C oder mehr und einem Druck von 5 atm oder mehr in einer Stickstoffatmosphäre.
Iβ (210): Beugungspeakintensität von β-Si3N4 in der (210)- Ebene,
Iα (102): Beugungspeakintensität von β-Si3N4 in der (102)-Ebene, und
Iα (210): Beugungspeakintensität von β-Si3N4 in der (210)-Ebene.
(1) Siliciumnitrid-Ausgangspulver mit einem Gehalt an 550 ppm Fe
(2) Siliciumnitrid-Ausgangspulver mit einem Gehalt an 600 ppm Al
(1) Beim ersten Pulver handelt es sich um das Siliciumnitrid-Pulver gemäß Tabelle 1.
(2) Beim zweiten Pulver handelt es sich um ein α-Siliciumnitrid-Pulver.
- 1. Der Siliciumnitrid-Sinterkörper, der durch Zugabe von 1-50 Gew.-% Siliciumnitrid-Pulver (β-Teilchen-Anteil 30% oder mehr, Sauerstoffgehalt 0,5 Gew.-% oder weniger, Fe- Gehalt 100 ppm oder weniger, Al-Gehalt 100 ppm oder weniger, durchschnittliche Teilchengröße 0,2-10 µm und Seitenverhältnis 10 oder weniger) als kernbildende Teilchen gebildet worden war, wies eine Wärmeleitfähigkeit von 100 W/mK oder mehr und eine Dreipunkt-Biegefestigkeit von 600 MPa oder mehr bei Raumtemperatur auf.
- 2. Während ein herkömmlicher Siliciumnitrid- Sinterkörper eine Wärmeleitfähigkeit von etwa 40 W/mK aufwies, zeigte der erfindungsgemäße Siliciumnitrid- Sinterkörper eine erheblich höhere Wärmeleitfähigkeit.
- 3. Der Siliciumnitrid-Sinterkörper mit einem Gesamtgehalt an Sinterungshilfsmitteln von 0,6-7,0 Gew.-% und einem MgO/RExOy-Gewichtsverhältnis von 1-70 (Mg in MgO umgerechnet und Y, La, Ce, Dy, Gd und Yb in Seltenerdoxide RexOy umgerechnet) weist eine Wärmeleitfähigkeit von 100 W/mK oder mehr und eine Biegefestigkeit von 600 MPa oder mehr auf.
- 1. Bei der Probe Nr. 31, bei der der β-Teilchen-Anteil der Siliciumnitrid-Körner weniger als 30% beträgt, weist der erhaltene Siliciumnitrid-Sinterkörper eine bemerkenswert geringe Biegefestigkeit von etwa 500 MPa auf.
- 2. Bei der Probe Nr. 32, bei der der Gehalt an unvermeidlicherweise im Siliciumnitrid-Pulver enthaltenem Sauerstoff mehr als 0,5 Gew.-% beträgt, weist der erhaltene Siliciumnitrid-Sinterkörper eine geringe Wärmeleitfähigkeit von nur 70 W/mK oder weniger auf.
- 3. Bei den Proben Nr. 33 und 34, bei denen die Anteile an als Verunreinigungen im Siliciumnitrid-Pulver enthaltenem Fe und Al jeweils mehr als 100 ppm betragen, weist der erhaltene Siliciumnitrid-Sinterkörper eine auf 65 W/mK oder weniger verringerte Wärmeleitfähigkeit auf.
- 4. Bei den Proben Nr. 35 und 36, bei denen die durchschnittliche Teilchengröße des Siliciumnitrid-Pulvers weniger als 0,2 µm beträgt, weist der erhaltene Siliciumnitrid-Sinterkörper eine Wärmeleitfähigkeit von 60 W/mK oder weniger auf. Wenn die durchschnittliche Teilchengröße mehr als 10 µm beträgt, so zeigt der erhaltene Siliciumnitrid-Sinterkörper keine dichte Beschaffenheit und weist somit eine geringe Wärmeleitfähigkeit von 60 W/mK oder weniger und eine geringe Biegefestigkeit von weniger als 600 MPa auf.
- 5. Bei der Probe Nr. 37, bei der das Seitenverhältnis des Siliciumnitrid-Pulvers mehr als 10 beträgt, zeigt der erhaltene Siliciumnitrid-Sinterkörper keine dichte Beschaffenheit und besitzt somit eine geringe Biegefestigkeit von weniger als 600 MPa.
- 6. Bei den Proben Nr. 38 und 39 beträgt die Menge des zugesetzten Siliciumnitrid-Pulvers weniger als 1,0 Gew.-%. Der erhaltene Siliciumnitrid-Sinterkörper weist eine geringe Biegefestigkeit von weniger als 600 MPa auf. Bei einem Anteil von mehr als 50 Gew.-% zeigt der erhaltene Siliciumnitrid- Sinterkörper eine geringe Wärmeleitfähigkeit von 70 W/mK oder weniger.
- 7. Bei den Proben Nr. 40 und 41 beträgt die Gesamtmenge der Sinterungshilfsmittel weniger als 0,6 Gew.-%. Der erhaltene Siliciumnitrid-Sinterkörper weist eine geringe Dichte und somit eine äußerst geringe Wärmeleitfähigkeit und Biegefestigkeit auf. Wenn andererseits die Gesamtmenge der Sinterungshilfsmittel 7,0 Gew.-% übersteigt, so entsteht beim Sinterungsprozess eine ausreichende Glasphase, so dass ein dichter Siliciumnitrid-Sinterkörper entsteht. Der Siliciumnitrid-Sinterkörper weist eine auf 60 W/mK oder weniger verringerte Wärmeleitfähigkeit auf, was auf die Zunahme der Korngrenzflächen mit geringer Wärmeleitfähigkeit zurückzuführen ist.
Vorschubgeschwindigkeit des Substrats: 20 cm/min
Länge der Behandlungszone: 80 cm
Anzahl der Düsen: 4
Strahldruck der Düsen: 0,35 MPa
Strahlwinkel zur Substratoberfläche: 30°
Schleifmittelteilchen: Aluminiumoxid #240.
- 1. Die Probe Nr. 91 wies eine durchschnittliche Mittellinien-Oberflächenrauhigkeit Ra von weniger als 0,2 µm und eine geringe Ablösefestigkeit von 8,5 kN/m auf, so dass an der Bindungsgrenzfläche Risse (Brüche) auftraten.
- 2. Die Probe Nr. 92 wies eine durchschnittliche Mittellinien-Oberflächenrauhigkeit Ra von mehr als 20 µm und eine geringe Ablösefestigkeit von 9,5 kN/m auf, so dass Risse an der Bindungsgrenzfläche auftraten.
- 3. Die Probe Nr. 93 wies ein Flächenverhältnis der Siliciumnitrid-Körner von weniger als 70%, ein Flächenverhältnis der Korngrenzflächen von mehr als 30% und eine geringe Ablösefestigkeit von 5,5 kN/m auf, so dass Risse an der Bindungsgrenzfläche auftraten.
- 4. Die Probe Nr. 94 wie einen Gipfel-Tal-Abstand L von weniger als 1 µm und eine geringe Ablösefestigkeit von 7,0 kN/m auf, so dass Risse an der Bindungsgrenzfläche auftraten.
- 5. Die Probe Nr. 95 wies an der Oberfläche einen Gipfel-Tal-Abstand L von 45 µm und eine auf 6,5 kN/m verringerte Ablösefestigkeit auf, so dass Risse an der Bindungsgrenzfläche auftraten.
- 6. Bei der Probe Nr. 96 lag der gleiche Sachverhalt wie bei der Probe Nr. 92 vor, mit der Ausnahme, dass als Bindungsverfahren anstelle einer Hartlötung eine Direktbindung vorgenommen wurde. Es ergab sich eine geringe Ablösefestigkeit von 7,0 kN/m, so dass Risse an der Bindungsgrenzfläche auftraten.
- 7. Bei der Probe Nr. 97 lag der gleiche Sachverhalt wie bei der Probe Nr. 92 vor, mit der Ausnahme, dass man bei der metallischen Leiterplatte von einer Kupferplatte zu einer Aluminiumplatte überging. Es ergab sich eine geringe Ablösefestigkeit von 6,5 kN/m, so dass Risse an der Bindungsgrenzfläche auftraten.
- 8. Bei der Probe Nr. 98 lag der gleiche Sachverhalt wie bei der Probe Nr. 97 vor, mit der Ausnahme, dass man beim Bindungsverfahren eine Änderung von einer Hartlötung zu einer direkten Bindung vornahm. Es ergab sich eine geringe Ablösefestigkeit von 6,2 kN/m, so dass Risse an der Bindungsgrenzfläche auftraten.
Claims (19)
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JP2000284957A JP3565425B2 (ja) | 2000-09-20 | 2000-09-20 | 窒化ケイ素質粉末の製造方法および窒化ケイ素質焼結体の製造方法 |
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DE10165107.4A Expired - Lifetime DE10165107B3 (de) | 2000-09-20 | 2001-09-19 | Substrat mit Siliciumnitrid-Sinterkörper und Leiterplatte |
DE2001165080 Expired - Lifetime DE10165080B4 (de) | 2000-09-20 | 2001-09-19 | Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit |
DE10146227.1A Expired - Lifetime DE10146227B4 (de) | 2000-09-20 | 2001-09-19 | Siliciumnitrid-Sinterkörper, Leiterplatte und thermoelektrisches Modul |
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DE2001165080 Expired - Lifetime DE10165080B4 (de) | 2000-09-20 | 2001-09-19 | Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit |
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- 2001-09-19 DE DE10146227.1A patent/DE10146227B4/de not_active Expired - Lifetime
- 2001-09-20 US US09/956,033 patent/US6846765B2/en not_active Expired - Lifetime
- 2001-09-20 KR KR1020010058380A patent/KR100833962B1/ko active IP Right Grant
- 2001-09-20 CN CNB011379634A patent/CN1192989C/zh not_active Expired - Lifetime
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US7915533B2 (en) | 2005-04-28 | 2011-03-29 | Hitachi Metals, Ltd. | Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module |
DE112006000992B4 (de) * | 2005-04-28 | 2014-03-27 | Hitachi Metals, Ltd. | Siliziumnitridsubstrat, Herstellungsverfahren des Siliziumnitridsubstrats, Siliziumnitridleiterplatte unter Verwendung des Siliziumnitridsubstrats und Halbleitermodul, das diese verwendet |
EP2387071A3 (de) * | 2006-03-23 | 2014-04-23 | CeramTec GmbH | Trägerkörper für Bauelemente oder Schaltungen |
EP1967503A1 (de) * | 2007-02-23 | 2008-09-10 | Kyocera Corporation | Gesintertes Produkt aus Siliciumnitrid, Schneidewerkzeug, Schneidevorrichtung und Schneideverfahren |
WO2008128947A1 (de) * | 2007-04-24 | 2008-10-30 | Ceramtec Ag | Verfahren zur herstellung eines metallisierten bauteils, bauteil sowie einen träger zur auflage des bauteils bei der metallisierung |
EP2484957A4 (de) * | 2009-07-06 | 2015-09-30 | Toshiba Kk | Elementmontierendes keramisches substrat, led-montierendes keramisches substrat, led-lampe, scheinwerfer und elektronische komponente |
WO2012136713A1 (de) * | 2011-04-04 | 2012-10-11 | H.C. Starck Ceramics Gmbh | Stabrolleneinheit für schmelztauchverfahren |
CN110423122A (zh) * | 2019-08-06 | 2019-11-08 | 中国科学院上海硅酸盐研究所 | 一种低损耗、高导热氮化硅陶瓷的制备方法 |
Also Published As
Publication number | Publication date |
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US7031166B2 (en) | 2006-04-18 |
DE10165107B3 (de) | 2015-06-18 |
KR100836150B1 (ko) | 2008-06-09 |
US20020164475A1 (en) | 2002-11-07 |
US6846765B2 (en) | 2005-01-25 |
DE10146227B4 (de) | 2015-01-29 |
CN1356292A (zh) | 2002-07-03 |
DE10165080B4 (de) | 2015-05-13 |
CN1192989C (zh) | 2005-03-16 |
KR20070103330A (ko) | 2007-10-23 |
KR100833962B1 (ko) | 2008-05-30 |
KR20020024534A (ko) | 2002-03-30 |
US20050094381A1 (en) | 2005-05-05 |
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