JP7198178B2 - セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール - Google Patents
セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール Download PDFInfo
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- JP7198178B2 JP7198178B2 JP2019149319A JP2019149319A JP7198178B2 JP 7198178 B2 JP7198178 B2 JP 7198178B2 JP 2019149319 A JP2019149319 A JP 2019149319A JP 2019149319 A JP2019149319 A JP 2019149319A JP 7198178 B2 JP7198178 B2 JP 7198178B2
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Description
<窒化ケイ素焼結体の作製>
窒化ケイ素粉末と、焼結助剤として、酸化マグネシウム粉末、及び酸化イットリウム粉末を準備した。これらを、Si3N4:Y2O3:MgO=94.0:3.0:3.0(質量比)で配合して原料粉末を得た。この原料粉末を、一軸加圧成形し、成形体を作製した。この成形体を、カーボンヒータを備える電気炉中に配置し、窒素ガスの雰囲気下、1800℃で12時間焼成して、平板形状の窒化ケイ素焼結体を得た。
窒化ケイ素焼結体の一部を、テープでマスキングした後、市販のエッチング液(塩化第二銅水溶液)に60分間浸漬した。エッチング液から窒化ケイ素焼結体を取り出した後、再度同じエッチング液に窒化ケイ素焼結体を60分間浸漬した。このように2回エッチング処理を行ってセラミックス基板を得た。テープを取り外して、得られたセラミックス基板の外観を光学顕微鏡で観察した。
図4は、セラミックス基板の光学顕微鏡写真である。図4に示すように、セラミックス基板の主面には、濃淡が互いに異なる第1領域10と第2領域20が形成されていた。それぞれの領域における表面粗さを、小型表面粗さ測定機(株式会社ミツトヨ製、商品名:サーフテスト SJ-310)を用いて測定した。その結果、第1領域10の表面粗さRa1は0.25μmであり、第2領域20の表面粗さRa2は0.50μmであった。
セラミックス基板を厚さ方向に切断し、主面近傍の断面を、走査型電子顕微鏡(SEN)を用いて観察した。図5は、実施例1のセラミックス基板の第2領域における主面近傍の断面を示すSEM写真である。図5に示すように、第2領域では表面が粗面化されていることが確認された。
<窒化ケイ素焼結体の作製>
窒化ケイ素粉末と、焼結助剤として、酸化マグネシウム粉末、酸化イットリウム粉末及び二酸化珪素粉末を準備した。これらを、Si3N4:Y2O3:MgO:SiO2=91.35:6.0:1.58:1.07(質量比)で配合して原料粉末を得た。この原料粉末を用いたこと以外は実施例1と同じ手順で、平板形状の窒化ケイ素焼結体を得た。そして実施例1と同じ手順でエッチングを行ってセラミックス基板を得た。テープを取り外して、得られたセラミックス基板の外観を光学顕微鏡で観察した。
図6は、セラミックス基板の光学顕微鏡写真である。図6に示すように、セラミックス基板の主面には、濃淡が互いに異なる第1領域10と第2領域が形成されていた。ただし、実施例1に比べると、濃淡の差が小さかった。第1領域10の表面粗さRa1は0.30μmであり、第2領域20の表面粗さRa2は0.31μmであった。
実施例1と同様に、主面近傍の断面を、走査型電子顕微鏡(SEN)を用いて観察した。図7は、実施例2のセラミックス基板の第2領域における主面近傍の断面を示すSEM写真である。図7に示すように、第2領域では表面が粗面化されていることが確認された。ただし、図5に示されるほど粗面化されていなかった。
焼結助剤として、Mgに対するYの質量比が、それぞれMgO及びY2O3に換算したときに0.1である金属酸化物粉末を準備した。これと窒化ケイ素粉末と配合して原料粉末を得た。この原料粉末を用いたこと以外は、実施例1と同じ手順で、平板形状の窒化ケイ素焼結体を得た。実施例1と同様にエッチング処理を行ったが、主面の粗化が十分に進行せず、主面の表面粗さを調整することができなかった。ただし、エッチング以外の方法(例えば、サンドブラスト)を用いれば、主面の一部を粗化して、実施例1,2と同様の第1領域及び第2領域を形成することは可能である。
焼結助剤として、Mgに対するYの質量比が、それぞれMgO及びY2O3に換算したときに5.0である金属酸化物粉末を準備した。これと窒化ケイ素粉末と配合して原料粉末を得た。この原料粉末を用いたこと以外は、実施例1と同じ手順で、平板形状の窒化ケイ素焼結体を得た。実施例1と同様にエッチング処理を行ったが、主面の粗化が十分に進行せず、主面の表面粗さを調整することができなかった。ただし、参考例1と同様に、エッチング以外の方法(例えば、サンドブラスト)を用いれば、主面の一部を粗化して、実施例1,2と同様の第1領域及び第2領域を形成することは可能である。
Claims (12)
- セラミックス成分と、当該セラミックス成分とは異なる、構成元素としてY及びMgを有する金属酸化物とを含有し、
少なくとも一つの主面において、表面粗さが互いに異なる第1領域と第2領域とを有し、前記第1領域と前記第2領域における、前記セラミックス成分に対する前記金属酸化物の割合は互いに異なる、セラミックス基板。 - 前記第1領域における表面粗さRa1に対する、前記第2領域における表面粗さRa2の比が、1.5以上である、請求項1に記載のセラミックス基板。
- 前記第2領域は、第1領域よりも大きい表面粗さRa2を有しており、
前記第2領域の少なくとも一部は樹脂と接着する、請求項1又は2に記載のセラミックス基板。 - 前記第1領域は、第2領域よりも小さい表面粗さRa1を有しており、
前記第1領域の少なくとも一部には導体部が接合される、請求項1~3のいずれか一項に記載のセラミックス基板。 - 前記セラミックス成分は窒化ケイ素を含有し、
前記金属酸化物におけるMgに対するYの質量比が、それぞれMgO及びY2O3に換算したときに0.3~3である、請求項1~4のいずれか一項に記載のセラミックス基板。 - 前記主面における前記第1領域の面積比率が30~90%であり、前記主面における前記第2領域の面積比率が10~70%である、請求項1~5のいずれか一項に記載のセラミックス基板。
- 請求項1~6のいずれか一項に記載のセラミックス基板と、
前記第1領域の少なくとも一部に接合される導体部と、を備え、
前記第1領域は、前記第2領域よりも小さい表面粗さRa1を有する、回路基板。 - 前記第2領域の少なくとも一部と樹脂とが接着しており、
前記第2領域は、第1領域よりも大きい表面粗さRa2を有する、請求項7に記載の回路基板。 - 請求項7又は8に記載の回路基板と、
前記回路基板を封止する樹脂と、を備え、
前記第2領域の少なくとも一部と前記樹脂とが接着している、パワーモジュール。 - 前記回路基板の前記導体部と、前記導体部と電気的に接続される半導体素子と、を備え、
前記半導体素子は前記回路基板とともに前記樹脂によって封止されている、請求項9に記載のパワーモジュール。 - セラミックス成分と、当該セラミックス成分とは異なる、構成元素としてY及びMgを有する金属酸化物とを含有するとともに、表面粗さRa1を有するセラミックス基板の主面に金属基板を接合して複合基板を得る工程と、
前記複合基板における前記金属基板の一部をエッチングによって除去して、導体部を形成する工程と、を有し、
前記エッチングによって、前記セラミックス基板の前記主面に、前記表面粗さRa1 を有する第1領域と、前記表面粗さRa 1 よりも大きい表面粗さRa2を有する第2領域と、を形成し、前記第1領域と前記第2領域における、前記セラミックス成分に対する前記金属酸化物の割合は互いに異なる、回路基板の製造方法。 - 前記セラミックス成分は窒化ケイ素を含有し、
前記金属酸化物におけるMgに対するYの質量比が、それぞれMgO及びY 2 O 3 に換算したときに0.3~3である、請求項11に記載の回路基板の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019149319A JP7198178B2 (ja) | 2019-08-16 | 2019-08-16 | セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール |
EP20854862.8A EP4015486B1 (en) | 2019-08-16 | 2020-08-05 | Ceramic substrate, circuit board and method for producing same, and power module |
CN202080049815.2A CN114097075A (zh) | 2019-08-16 | 2020-08-05 | 陶瓷基板、电路基板及其制造方法、以及功率模块 |
KR1020227002844A KR20220047260A (ko) | 2019-08-16 | 2020-08-05 | 세라믹스 기판, 회로 기판 및 그 제조 방법, 그리고 파워 모듈 |
PCT/JP2020/030060 WO2021033553A1 (ja) | 2019-08-16 | 2020-08-05 | セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール |
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JP2008172172A (ja) | 2007-01-15 | 2008-07-24 | Denso Corp | 電子制御装置及びその製造方法 |
JP2009239041A (ja) | 2008-03-27 | 2009-10-15 | Tdk Corp | 高周波モジュール及びその製造方法 |
JP2011187511A (ja) | 2010-03-04 | 2011-09-22 | Toshiba Corp | 窒化珪素基板およびそれを用いた半導体モジュール |
WO2018037842A1 (ja) | 2016-08-22 | 2018-03-01 | 株式会社村田製作所 | セラミック基板及び電子部品内蔵モジュール |
JP2019052072A (ja) | 2017-09-19 | 2019-04-04 | 株式会社Maruwa | 窒化ケイ素焼結体基板、電子装置、及び、窒化ケイ素焼結体基板の製造方法 |
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DE10165107B3 (de) * | 2000-09-20 | 2015-06-18 | Hitachi Metals, Ltd. | Substrat mit Siliciumnitrid-Sinterkörper und Leiterplatte |
US9057569B2 (en) | 2010-11-22 | 2015-06-16 | Kabushiki Kaisha Toshiba | Ceramic heat sink material for pressure contact structure and semiconductor module using the same |
JP2017123316A (ja) | 2016-01-08 | 2017-07-13 | 日本製紙株式会社 | 透明導電性フィルムの製造方法及びそれを用いたタッチパネル、ディスプレイ、太陽電池、照明 |
KR20180131072A (ko) * | 2017-05-31 | 2018-12-10 | 주식회사 코스텍시스 | 방열회로기판의 제조방법 |
JP7083256B2 (ja) * | 2018-02-19 | 2022-06-10 | 富士電機株式会社 | 半導体モジュール及びその製造方法 |
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JP2008172172A (ja) | 2007-01-15 | 2008-07-24 | Denso Corp | 電子制御装置及びその製造方法 |
JP2009239041A (ja) | 2008-03-27 | 2009-10-15 | Tdk Corp | 高周波モジュール及びその製造方法 |
JP2011187511A (ja) | 2010-03-04 | 2011-09-22 | Toshiba Corp | 窒化珪素基板およびそれを用いた半導体モジュール |
WO2018037842A1 (ja) | 2016-08-22 | 2018-03-01 | 株式会社村田製作所 | セラミック基板及び電子部品内蔵モジュール |
JP2019052072A (ja) | 2017-09-19 | 2019-04-04 | 株式会社Maruwa | 窒化ケイ素焼結体基板、電子装置、及び、窒化ケイ素焼結体基板の製造方法 |
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EP4015486A1 (en) | 2022-06-22 |
EP4015486B1 (en) | 2024-01-17 |
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WO2021033553A1 (ja) | 2021-02-25 |
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