CN209184563U - A kind of 5G base station power amplifier - Google Patents
A kind of 5G base station power amplifier Download PDFInfo
- Publication number
- CN209184563U CN209184563U CN201920171968.9U CN201920171968U CN209184563U CN 209184563 U CN209184563 U CN 209184563U CN 201920171968 U CN201920171968 U CN 201920171968U CN 209184563 U CN209184563 U CN 209184563U
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- pipe
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- preamplifier
- amplifier
- power
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Abstract
A kind of 5G base station power amplifier, is related to the 5th third-generation mobile communication equipment technical field.Signal is inputted by SMA input port, is divided into two paths of signals by microstrip type power splitter；First path signal is amplified by preamplifier pipe, is input to main amplifier pipe, is input to power combiner using quarter-wave transmission line；Alternate path signal is input to preamplifier pipe by quarter-wave transmission line, is input to power combiner by main amplifier pipe；Signal synthesizes signal all the way by power combiner and power combiner isolation resistance, exports by SMA output port.Power amplifier pipe in two paths is field effect transistor, and uses integrated antenna package.The utility model is configured with optimal bias voltage and peripheral circuit to meet the performance requirement of power amplifier, has the characteristics that high-gain, high linearity and high power added efficiency.
Description
Technical field
The utility model relates to the 5th third-generation mobile communication equipment technical fields, are specifically related to a kind of 5G base station power amplification
Device.
Background technique
5th third-generation mobile communication (5G) uses wideband digital modulation technique, and modulated wave is non-constant envelope signal, peak-to-average force ratio
It is higher, it means that base station transmitter should use the power amplifier of High Linear.In order to meet the linearity index in Larger Dynamic,
For power amplifier using the AB type to retract greatly, power added efficiency is very low.
In order to improve the availability of frequency spectrum of system, meet the different application scenarios such as high-speed, big bandwidth and low time delay,
The mobile base station of five third-generation mobile communications (5G) system uses the active array based on extensive multiple-input and multiple-output and Wave beam forming
Antenna.In this structure, as soon as antenna array unit or mutiple antennas array element are required to configuration power amplifier, this
Mean that active antenna array antenna configuration is multiple or even thousands of a power amplifiers.Therefore, it is used for the 5th third-generation mobile communication
The power amplifier of (5G) must satisfy requirement of the base station to heat dissipation, and antenna requires very the power added efficiency of power amplifier
It is high.
In order to meet the requirement of high efficiency and High Linear, the 5th third-generation mobile communication (5G) system use high efficiency power amplifier and
The technical route that linearization technique combines uses digital pre-distortion technology in the linearity, and high efficiency is then by power amplification
Device is realized.The method that improves efficiency of technology for improving power amplifier existing at present include small rollback AB power-like amplifier,
Qie Ruikesi, envelope eliminate the technologies such as recovery and dynamic envelope tracking.Wherein, it is easy although small rollback AB class power amplifier is realized, just
In production, but its ability improved efficiency is limited, is insufficient for requiring；Qie Ruikesi technology needs signal amplitude and phase to exist
Accurate transformation in broadband, technical difficulty are very big；Envelope, which is eliminated to restore, needs broadband and height with technologies such as dynamic envelope tracking
The power adapter of reaction speed, device technology do not reach requirement.
Although digital pre-distortion technology technology can effectively improve the linearity of the 5th third-generation mobile communication (5G), reduce to function
The requirement of the rate amplifier linearity, still, complicated digital pre-distortion technology are larger to the expense of hardware, are improving system skill
While the complexity of art, the cost of base station equipment also improved, therefore, in the linear of digital pre-distortion and power amplifier
Degree finds allocation optimum in power added efficiency, be the 5th third-generation mobile communication (5G) base station power amplifier major issue it
One.
Utility model content
It is mobile logical the purpose of the utility model is to provide a kind of 5th generation in the presence of solving the disadvantage that the prior art
Believe (5G) base station power amplifier.
The technical issues of to solve the utility model, used technical solution are as follows: a kind of 5G base station power amplifier, it is main
It to include SMA input port, microstrip type power splitter, power splitter isolation resistance, alternate path quarter-wave transmission line, first
Access preamplifier pipe, alternate path preamplifier pipe, the first access main amplifier pipe, alternate path main amplifier pipe,
First access quarter-wave transmission line, power combiner isolation resistance, power combiner, SMA output port；Signal by
The input of SMA input port is divided into two paths of signals by microstrip type power splitter, and two path signals are mutual by power splitter isolation resistance
Isolation；First path signal is amplified by the first access preamplifier pipe, is input to the first access main amplifier pipe, using
First access quarter-wave transmission line is input to power combiner；Alternate path signal passes through alternate path quarter-wave
Long transmission line is input to alternate path preamplifier pipe, is input to power combiner by alternate path main amplifier pipe；Letter
Number signal all the way is synthesized by power combiner and power combiner isolation resistance, is exported by SMA output port.
The 5G base station power amplifier of the utility model, the first access preamplifier pipe, the first access main amplifier pipe,
Alternate path preamplifier pipe, alternate path main amplifier pipe encapsulate chip package by power amplifier pipe；First access
Signal is input to the first rf inputs mouth of power amplifier pipe encapsulation chip, and alternate path signal divides by alternate path four
One of wavelength transmission line be input to power amplifier pipe encapsulation chip the second rf inputs mouth；Power amplifier pipe encapsulates core
Piece amplifies two path signals, then respectively by the first radio frequency output port and the of power amplifier pipe encapsulation chip
The output of two radio frequency output ports, the first path signal are output to power combing by the first access quarter-wave transmission line
Device, alternate path signal are directly output to power combiner 11, export finally by SMA output port.
The 5G base station power amplifier of the utility model, in the first access, the first access preamplifier tube grid voltage
VG1 is inputted by pad, is transmitted by the first access preamplifier tube grid voltage VG1 feeder line, the preposition amplification of the first access
Device tube grid first capacitor one terminates the first access preamplifier tube grid voltage VG1 feeder line, and the other end is grounded by via hole；
First the second capacitor of access preamplifier tube grid one terminates the first access preamplifier tube grid voltage VG1 feeder line, separately
One end is grounded by via hole；First access preamplifier tube grid third capacitor one terminates the first access preamplifier pipe grid
Pole tension VG1 feeder line, the other end are grounded by via hole；First access preamplifier tube grid voltage VG1 passes through the first access
Preamplifier tube grid voltage VG1 feeder line and the first access preamplifier tube grid first capacitor, the first access are preposition
The second capacitor of amplifier tube grid, the first access preamplifier tube grid third capacitor are applied to the first access preamplifier
The grid of pipe；
In first access, the first access preamplifier pipe drains pole tension VD1 by pad input, passes through the first access
The transmission of preamplifier pipe drain voltage VD1 feeder line, the first access preamplifier pipe drain electrode first capacitor one termination first are logical
Road preamplifier pipe drain voltage VD1 feeder line, the other end across the first access preamplifier tube grid voltage VG1 feeder line,
It is grounded by via hole；First access preamplifier pipe the second capacitor one of drain electrode terminates the first access preamplifier pipe drain electrode electricity
VD1 feeder line is pressed, the other end is grounded by via hole；First access preamplifier pipe drains before the first access of termination of third capacitor one
Amplifier tube drain voltage VD1 feeder line is set, the other end is grounded by via hole；First access preamplifier pipe drain electrode pole tension
VD1 by the first access preamplifier pipe drain voltage VD1 feeder line and the first access preamplifier pipe drain first capacitor,
The second capacitor of first access preamplifier pipe drain electrode, the first access preamplifier pipe drain electrode third capacitor are applied to first and lead to
The drain electrode of road preamplifier pipe.
The 5G base station power amplifier of the utility model, the grid voltage VG2 and drain electrode electricity of the first access main amplifier pipe
Press VD2, the grid voltage VG3 and drain voltage VD3 of alternate path preamplifier pipe, the grid of alternate path main amplifier pipe
Voltage VG4 and drain voltage VD4 uses the placement-and-routing of identical with the first access preamplifier pipe feeder line and partially installing capacitor
Mode is applied to grid and the drain electrode of the first access main amplifier pipe, the grid of alternate path preamplifier pipe and leakage respectively
Pole, the grid of alternate path main amplifier pipe and drain electrode.
The beneficial effect of the utility model compared with the existing technology is:
The 5G base station power amplifier of the utility model, input signal is divided into two-way using power splitter by input terminal, defeated
Two paths of signals access is synthesized signal output all the way using power combiner by outlet, in the power splitter and output end of input terminal
Combiner is all made of resistive isolation device.The input termination quarter-wave transmission of second road signal access preamplifier pipe
Line, the output of first via signal access main amplifier pipe terminate quarter-wave transmission line, and two paths of signals is hindered using ladder
Resistance changing device reaches the best match of impedance.First via signal access uses two-stage series connection power amplifier pipe structure,
Middle preamplifier pipe uses class-a amplifier structure, and main amplifier pipe uses class ab ammplifier；Second road signal access uses
Two-stage series connection power amplifier pipe structure, wherein preamplifier pipe uses class-a amplifier structure, and main amplifier pipe uses C class
Amplifier.Power amplifier pipe in two paths is field effect transistor, and uses integrated antenna package.The utility model is
Meet the performance requirement of power amplifier, while being configured with optimal bias voltage and peripheral circuit, with high-gain, height
The features such as linearity and high power added efficiency.
Detailed description of the invention
It makes and being discussed further with 5G base station power amplifier of the attached drawing to the utility model with reference to embodiments.
Fig. 1 is the signal transmission schematic diagram of 5G base station power amplifier.
Fig. 2 is the circuit diagram of 5G base station power amplifier.
In figure: 1-SMA input port；2- microstrip type power splitter；3- power splitter isolation resistance；4- alternate path a quarter
Wavelength transmission line；5- the first access preamplifier pipe；6- alternate path preamplifier pipe；7- the first access main amplifier
Pipe；8- alternate path main amplifier pipe；9- the first access quarter-wave transmission line；10- power combiner isolation resistance；
11- power combiner；12-SMA output port.
13- power amplifier pipe encapsulates chip；14- the first rf inputs mouth；15- the second rf inputs mouth；16-
One radio frequency output port；The second radio frequency output port of 17-.
18- the first access preamplifier tube grid voltage VG1；19- the first access preamplifier tube grid voltage VG1
Feeder line；20- the first access preamplifier tube grid first capacitor；21- the first access preamplifier the second capacitor of tube grid；
22- the first access preamplifier tube grid third capacitor.
23- the first access preamplifier pipe drain electrode pole tension VD1；24- the first access preamplifier pipe drain voltage
VD1 feeder line；25- the first access preamplifier pipe drain electrode first capacitor；The second electricity of 26- the first access preamplifier pipe drain electrode
Hold；27- the first access preamplifier pipe drain electrode third capacitor.
Specific embodiment
Refering to Figure 1,5G base station power amplifier mainly includes SMA input port 1, microstrip type power splitter 2, function point
It is put before device isolation resistance 3, alternate path quarter-wave transmission line 4, the first access preamplifier pipe 5, alternate path
Big device pipe 6, the first access main amplifier pipe 7, alternate path main amplifier pipe 8, the first access quarter-wave transmission line 9,
Power combiner isolation resistance 10, power combiner 11, SMA output port 12.
Signal is inputted by SMA input port 1, is divided by microstrip type power splitter 2 for two paths of signals, and two path signals pass through function
Divide device isolation resistance 3 mutually isolated；First path signal is amplified by the first access preamplifier pipe 5, and it is logical to be input to first
Road main amplifier pipe 7 is input to power combiner 11 using the first access quarter-wave transmission line 9；Alternate path letter
Number alternate path preamplifier pipe 6 is input to by alternate path quarter-wave transmission line 4, by alternate path, master is put
Big device pipe 8 is input to power combiner 11；Signal synthesizes one by power combiner 11 and power combiner isolation resistance 10
Road signal is exported by SMA output port 12.
As shown in Fig. 2, the first access preamplifier pipe, the first access main amplifier pipe, alternate path preamplifier
Pipe, alternate path main amplifier pipe encapsulate chip 13 by power amplifier pipe and encapsulate.First path signal is input to power and puts
First rf inputs mouth 14 of big device pipe encapsulation chip 13, alternate path signal are transmitted by alternate path quarter-wave
Line 4 is input to the second rf inputs mouth 15 of power amplifier pipe encapsulation chip 13.It is right that power amplifier pipe encapsulates chip 13
Two path signals amplify, then respectively by the first radio frequency output port 16 and the of power amplifier pipe encapsulation chip 13
The output of two radio frequency output ports 17, the first path signal are output to power conjunction by the first access quarter-wave transmission line 9
Grow up to be a useful person 11, alternate path signal is directly output to power combiner 11, exports finally by SMA output port 12.
Shown in referring to Figure 2 together, the first access preamplifier tube grid voltage VG118 is inputted by pad, is passed through
The transmission of first access preamplifier tube grid voltage VG1 feeder line 19, the first access preamplifier tube grid first capacitor 20
(C11) a first access preamplifier tube grid voltage VG1 feeder line 19 of termination, the other end are grounded by via hole；First access
21 (C12) one of the second capacitor of preamplifier tube grid terminates the first access preamplifier tube grid voltage VG1 feeder line 19, separately
One end is grounded by via hole；First access preamplifier tube grid third capacitor, 22 (C13) one is put before terminating the first access
Big device tube grid voltage VG1 feeder line 19, the other end is grounded by via hole.VG1 is applied to by feeder line and C11, C12, C13
The grid of one access preamplifier pipe 5.
First access preamplifier pipe drains pole tension VD123 by pad input, passes through the preposition amplification of the first access
Device pipe drain voltage VD1 feeder line 24 transmits, and the first access preamplifier pipe drain electrode first capacitor 25 (C14) one termination first is logical
Road preamplifier pipe drain voltage VD1 feeder line 24, the other end is across the first access preamplifier tube grid voltage VG1 feeder line
19, it is grounded by via hole；First access preamplifier pipe drain electrode, 26 (C15) one of the second capacitor terminates the preposition amplification of the first access
Device pipe drain voltage VD1 feeder line 24, the other end are grounded by via hole；First access preamplifier pipe drain electrode third capacitor 27
(C16) a first access preamplifier pipe drain voltage VD1 feeder line 24 of termination, the other end are grounded by via hole.VD1 passes through feedback
Line and C14, C15, C16 are applied to the drain electrode of the first access preamplifier pipe 5.
The grid voltage VG2 and drain voltage VD2 of first access main amplifier pipe, the grid of alternate path preamplifier pipe
Pole tension VG3 and drain voltage VD3, the grid voltage VG4 and drain voltage VD4 of alternate path main amplifier pipe are used and first
Placement-and-routing's mode of the identical feeder line of access preamplifier pipe and partially installing capacitor is applied to the first access main amplifier respectively
The grid of pipe and drain electrode, the grid of alternate path preamplifier pipe and drain electrode, the grid of alternate path main amplifier pipe and leakage
Pole.
Above content is only the design example and explanation to the utility model, the technologies of affiliated the art
Personnel make various modifications or additions to the described embodiments or are substituted in a similar manner, without departing from
The design of utility model or beyond the scope defined by this claim, all should belong to the protection range of the utility model.
Claims (7)
1. a kind of 5G base station power amplifier, which is characterized in that mainly include SMA input port (1), microstrip type power splitter (2),
Power splitter isolation resistance (3), alternate path quarter-wave transmission line (4), the first access preamplifier pipe (5), second
Access preamplifier pipe (6), the first access main amplifier pipe (7), alternate path main amplifier pipe (8), the first access four divide
One of wavelength transmission line (9), power combiner isolation resistance (10), power combiner (11), SMA output port (12)；Signal
It is inputted by SMA input port (1), is divided into two paths of signals by microstrip type power splitter (2), two path signals are isolated by power splitter
Resistance (3) is mutually isolated；First path signal is amplified by the first access preamplifier pipe (5), is input to the first access master
Amplifier tube (7) is input to power combiner (11) using the first access quarter-wave transmission line (9)；Alternate path
Signal is input to alternate path preamplifier pipe (6) by alternate path quarter-wave transmission line (4), logical by second
Road main amplifier pipe (8) is input to power combiner (11)；Signal is by power combiner (11) and power combiner isolation electricity
Resistance (10) synthesizes signal all the way, exports by SMA output port (12).
2. 5G base station power amplifier as described in claim 1, which is characterized in that the first access preamplifier pipe, first
Access main amplifier pipe, alternate path preamplifier pipe, alternate path main amplifier pipe encapsulate core by power amplifier pipe
Piece (13) encapsulation；First path signal is input to the first rf inputs mouth (14) of power amplifier pipe encapsulation chip (13),
Alternate path signal is input to power amplifier pipe encapsulation chip (13) by alternate path quarter-wave transmission line (4)
Second rf inputs mouth (15)；Power amplifier pipe encapsulation chip (13) amplifies two path signals, then passes through respectively
Overpower amplifier tube encapsulates the first radio frequency output port (16) and the second radio frequency output port (17) output of chip (13), the
One path signal is output to power combiner (11), alternate path signal by the first access quarter-wave transmission line (9)
It is directly output to power combiner 11, is exported finally by SMA output port (12).
3. 5G base station power amplifier as claimed in claim 2, which is characterized in that in the first access, put before the first access
Big device tube grid voltage VG1 (18) is inputted by pad, passes through the first access preamplifier tube grid voltage VG1 feeder line (19)
Transmission, the first access preamplifier tube grid first capacitor (20) one terminate the first access preamplifier tube grid voltage
VG1 feeder line (19), the other end are grounded by via hole；First the second capacitor of access preamplifier tube grid (21) one termination first
Access preamplifier tube grid voltage VG1 feeder line (19), the other end are grounded by via hole；First access preamplifier pipe grid
Pole third capacitor (22) one terminates the first access preamplifier tube grid voltage VG1 feeder line (19), and the other end connects by via hole
Ground；First access preamplifier tube grid voltage VG1 (18) passes through the first access preamplifier tube grid voltage VG1 feeder line
(19) and the first access preamplifier tube grid first capacitor (20), first access preamplifier the second capacitor of tube grid
(21), the first access preamplifier tube grid third capacitor (22) is applied to the grid of the first access preamplifier pipe (5)；
In first access, the first access preamplifier pipe drains pole tension VD1 (23) by pad input, passes through the first access
Preamplifier pipe drain voltage VD1 feeder line (24) transmission, the first access preamplifier pipe drain electrode first capacitor (25) one end
Connect the first access preamplifier pipe drain voltage VD1 feeder line (24), the other end is across the first access preamplifier tube grid
Voltage VG1 feeder line (19), is grounded by via hole；First access preamplifier pipe the second capacitor (26) one of drain electrode termination first is logical
Road preamplifier pipe drain voltage VD1 feeder line (24), the other end are grounded by via hole；The drain electrode of first access preamplifier pipe
Third capacitor (27) one terminates the first access preamplifier pipe drain voltage VD1 feeder line (24), and the other end is grounded by via hole；
First access preamplifier pipe drain electrode pole tension VD1 (23) passes through the first access preamplifier pipe drain voltage VD1 feeder line
(24) and the first access preamplifier pipe drain electrode first capacitor (25), the first access preamplifier pipe drain the second capacitor
(26), the first access preamplifier pipe drain electrode third capacitor (27) is applied to the drain electrode of the first access preamplifier pipe (5).
4. 5G base station power amplifier as claimed in claim 3, which is characterized in that the grid electricity of the first access main amplifier pipe
Press VG2 and drain voltage VD2, the grid voltage VG3 and drain voltage VD3 of alternate path preamplifier pipe, alternate path master
The grid voltage VG4 and drain voltage VD4 of amplifier tube use feeder line identical with the first access preamplifier pipe and biasing
Placement-and-routing's mode of capacitor is applied to grid and the drain electrode of the first access main amplifier pipe, alternate path preamplifier respectively
The grid of pipe and drain electrode, the grid of alternate path main amplifier pipe and drain electrode.
5. the 5G base station power amplifier as described in claim 1-4 any one, which is characterized in that first via signal access is adopted
With two-stage series connection power amplifier pipe structure, wherein preamplifier pipe uses class-a amplifier structure, and main amplifier pipe uses
Class ab ammplifier.
6. the 5G base station power amplifier as described in claim 1-4 any one, which is characterized in that second road signal access is adopted
With two-stage series connection power amplifier pipe structure, wherein preamplifier pipe uses class-a amplifier structure, and main amplifier pipe uses
C class A amplifier A.
7. the 5G base station power amplifier as described in claim 1-4 any one, which is characterized in that the power in two paths
Amplifier tube is field effect transistor, and uses integrated antenna package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920171968.9U CN209184563U (en) | 2019-01-31 | 2019-01-31 | A kind of 5G base station power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920171968.9U CN209184563U (en) | 2019-01-31 | 2019-01-31 | A kind of 5G base station power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209184563U true CN209184563U (en) | 2019-07-30 |
Family
ID=67379161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920171968.9U Withdrawn - After Issue CN209184563U (en) | 2019-01-31 | 2019-01-31 | A kind of 5G base station power amplifier |
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| Country | Link |
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| CN (1) | CN209184563U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560780A (en) * | 2019-01-31 | 2019-04-02 | 合肥立芯通信技术有限公司 | A kind of 5G base station power amplifier |
-
2019
- 2019-01-31 CN CN201920171968.9U patent/CN209184563U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560780A (en) * | 2019-01-31 | 2019-04-02 | 合肥立芯通信技术有限公司 | A kind of 5G base station power amplifier |
| CN109560780B (en) * | 2019-01-31 | 2023-09-19 | 合肥盛芯世纪信息科技有限公司 | 5G base station power amplifier |
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