CN105207644A - On-chip active phase shifter based on vector synthesis - Google Patents

On-chip active phase shifter based on vector synthesis Download PDF

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CN105207644A
CN105207644A CN201510591781.0A CN201510591781A CN105207644A CN 105207644 A CN105207644 A CN 105207644A CN 201510591781 A CN201510591781 A CN 201510591781A CN 105207644 A CN105207644 A CN 105207644A
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signal
phase shifter
active phase
lun
input
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CN105207644B (en
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康凯
余益明
赵�怡
李锦豪
郑清友
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University of Electronic Science and Technology of China
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Abstract

The invention relates to an active phase shifter, and provides an on-chip active phase shifter based on a vector synthesis technology. The on-chip active phase shifter is used for solving the problems that an active phase shifter is high in power consumption and large in phase error and amplitude error. The on-chip active phase shifter based on the vector synthesis technology comprises a power distribution unit, an orthogonal signal generation unit, two differential signal generation units, a signal synthesis unit and an output balun; a single-ended input signal is input to the input end of the power distribution unit, the power distribution unit divides the input signal into two paths of in-phase signals to be output to the orthogonal signal generation unit which produces a group of orthogonal signals to be input to the two differential signal generation units respectively, each differential signal generation unit produces a group of differential signals to be input to the signal synthesis unit, and the signal synthesis unit synthesizes the two groups of the differential signals into one group of differential signal to be input to the output balun. The active phase shifter is simple in structure, capable of effectively improving signal power gain on the condition that the low circuit power consumption and high phase accuracy are guaranteed and suitable for large-scale application and promotion.

Description

A kind of on-chip active phase shifter based on Vector modulation
Technical field
The present invention relates to active phase shifter, be specifically related to a kind of on-chip active phase shifter based on Vector modulation technology.
Background technology
Along with the development of society and the progress of technology, the demand of people to two-forty, great Rong radio communication is more and more stronger, and some current wireless communication technologys are limited to limited bandwidth and channel resource, be difficult to the demand meeting people, millimeter wave frequency band has and enriches frequency spectrum resource, can meet the demand of high-speed radiocommunication application, but the performance that front ends of millimeter waves product is poor at present and fancy price cost seriously hinder applying of millimetre-wave attenuator technology.The technical advantage of phased-array technique uniqueness significantly can promote the performance of millimeter-wave communication system, and utilize CMOS technology to carry out millimetre integrated circuit design can to reduce the cost of system significantly, so silicon base CMOS millimeter wave phased-array technique becomes a hot technology solution of high-speed radiocommunication system.
Phase shifter, as phased array system core component, plays critical effect to the quality of whole system performance.At present, although phase shifter can adopt passive device to build, the control circuit relative complex that their physical size is larger, supporting, is not suitable for large-scale integrated; Active phase shifter structure is simple, control is convenient, integrated level is high and loss is lower, is applicable to very much adopting commercial IC technique to carry out design and produces, be conducive to the popularization that phased array system business is applied.For CMOS millimeter phase-shifter, adopt active structure to improve gain, but the power consumption of active phase shifter is comparatively large, phase accuracy is not high, phase error and range error comparatively large, be not well positioned to meet systematic difference demand.Therefore, design the active phase shifter that a kind of precision is high, error is little, low in energy consumption is the direction that CMOS phase shifter is made great efforts always.
Summary of the invention
The object of the present invention is to provide a kind of on-chip active phase shifter based on Vector modulation, for solve high, the phase error of on-chip active phase shifter power consumption that prior art exists and range error large, the problem of system requirements can not be met.
To achieve these goals, the technical solution used in the present invention is as follows:
A kind of on-chip active phase shifter based on Vector modulation, comprise power distributing unit, orthogonal signalling generation unit, two differential signal generation units, signal synthesis unit and output Ba Lun, wherein, the input of single ended signal input Power Distribution unit, input signal is divided into two-way homophase (amplitude-controllable) signal to output to orthogonal signalling generation unit by power distributing unit, orthogonal signalling generation unit produces one group of (two-way) orthogonal signalling and inputs two differential signal generation units respectively, each differential signal generation unit produces one group of differential signal input signal synthesis unit, two groups of differential signals are synthesized one group of differential signal input and output Ba Lun by signal synthesis unit, export Ba Lun and this differential signal is converted to Single-end output signal.
In the present invention, described differential signal generation unit comprises input matching circuit, field effect transistor and inter-stage Ba Lun, described input matching circuit is made up of two inductance, described fet gate matching connection circuit, source class connect grounded inductor, drain electrode connects inter-stage Ba Lun, and single-ended signal is converted into differential signal by described inter-stage Ba Lun.
Further, described inter-stage Ba Lun comprises about two the octagon coils be coupled, and wherein, the drain electrode of subordinate's coil one termination field effect transistor, other end ground connection, higher level's coil two ends export and the centre cap of higher level's coil is connected with the earth terminal of subordinate coil.
In the present invention, described orthogonal signalling generation unit is made up of a Π type low-pass network and a T-shaped high pass network, described Π type low-pass network is by series inductance and be connected in parallel on two, these inductance two ends electric capacity and form, and the inductance that described T-shaped high pass network is connected between two electric capacity by two series capacitances and one end forms.
In the present invention, described signal synthesis unit comprises the Gilbert cell circuit be made up of eight field effect transistor, and each fet gate is connected with ON-OFF control circuit and decoupling capacitor.
In the present invention, described output Ba Lun comprises about two the octagon coils be coupled, wherein, the centre cap of higher level's coil connects the differential signal outputs mouth of signal synthesis unit and this centre cap is parallel with short-circuit micro-band line, and subordinate's coil one end exports, other end ground connection; The tap of higher level's hub of a spool is as direct current distributing point.
Compared with prior art, the present invention has following beneficial effect:
(1) in the present invention, power distributing unit is positioned over the first order of circuit, can reduce power distributing unit quantity compared with traditional vector compounding phase shifter, greatly reduces power consumption and the structure complexity of integrated circuit; In addition, adopt this structure only to need single port input signal, the direct current biasing condition of late-class circuit under different phase-shift states is remained unchanged, and the design of circuit is more prone to;
(2) the present invention is to the innovation of phase shifter structure on sheet, the two-way in-phase signal of power distributing unit is converted to one group of orthogonal signalling by orthogonal signalling generation unit, i.e. phase 90 °, by power distributing unit, the phase place that the amplitude of two-way in-phase signal controls just can realize 360 ° of scopes is covered, the use of passive device in effective minimizing circuit, the area of phase shifter in reducing tab; Quadrature network adopts the T-shaped high pass open network of inductance and electric capacity composition and Π type low-pass network to realize in addition, compares, significantly can reduce Insertion Loss, the noise decrease of circuit, thus promote the overall performance of circuit with traditional RC network;
(3) in the present invention, power distributing unit adopts the working method of discrete control, transistor in this cellular construction in field-effect transistor and signal synthesis unit all adopts the form of switch, there is the transistor of half to be in closed condition under operating state, greatly can reduce the power consumption of active phase shifter;
(4) the inter-stage Ba Lun in the present invention in differential signal generation unit structure adopts current multiplexing technology, the power consumption of further reduction circuit, in inter-stage Ba Lun, the centre cap of higher level's coil and subordinate's coil earth terminal link together, ensure the single-ended AC signal transistor that direct current can be connected with Ba Lun by the direct feed-in of Ba Lun while the mode of coil coupling is converted to differential signal, namely achieve current multiplexing.
(5) on-chip active phase shifter provided by the invention have employed multistage active circuit structure to improve the power gain of signal at low, the phase accuracy of guarantee circuit power consumption high, effectively overcome the shortcoming that millimeter wave frequency band has phase shifter power gain deficiency, smart structural design, realistic application.In order to reduce area, inductance in circuit all adopts microstrip structure to realize, in order to convenient test difference output end is connected with Ba Lun, output signal is converted to single-ended signal, and be parallel with two sections of stubs at the centre cap of Ba Lun and complete impedance matching simultaneously, the actual circuit structure completed is simple, power consumption is lower, is applicable to large-scale promotion application.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the on-chip active phase shifter that the present invention is based on Vector modulation.
Fig. 2 is the schematic diagram of power distributing unit in the on-chip active phase shifter that the present invention is based on Vector modulation.
Fig. 3 is inter-stage barron structure schematic diagram in the on-chip active phase shifter that the present invention is based on Vector modulation.
Fig. 4 is the principal diagram intention exporting Ba Lun in the on-chip active phase shifter that the present invention is based on Vector modulation.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described, and embodiments of the present invention include but not limited to the following example.
Be illustrated in figure 1 a kind of on-chip active phase shifter based on Vector modulation in the present embodiment, it is by improving circuit structure and being similar to the employing of current multiplexing technology, the reduction of realizing circuit power consumption and the lifting of signal gain, their main compositions are with lower part:
Power distributing unit U1, be formed by stacking by the common-source amplifier of one-level high-gain and two-stage field-effect transistor, its effect carries out gain-adjusted and power division to input signal, single ended signal is amplified, and under the effect of control signal, exports two-way amplitude-controllable but the identical signal of phase place;
Orthogonal signal generator U2, produces orthogonal I, Q two paths of signals; It is made up of a Π type low-pass network and a T-shaped high pass network, and two-way in-phase signal phase place after these two networks that power distributing unit exports can differ 90 °, is one group of orthogonal signalling I, Q signal; Export the needs of phase place according to circuit, controlled thus control I, Q vector signal amplitude by power distributing unit U1 to the amplitude of two-way In-phase output signal, the phase place of realizing circuit 360 ° of scopes covers;
Differential signal generation unit U3, U4, two differential signal generation unit structures are identical, be made up of input matching circuit, field effect transistor and inter-stage Ba Lun, described fet gate matching connection circuit, source class connect grounded inductor, drain electrode connects inter-stage Ba Lun single-ended signal being converted into differential signal, and each road orthogonal signalling is converted into one group of differential signal;
Signal synthesis unit U5, comprises the gilbert circuit element circuit be made up of eight field effect transistor, has signal amplification, polarity selects the function with signal syntheses;
The output of circuit forms primarily of a Ba Lun with impedance transformation effect, and the Single-end output signal of Ba Lun is as the output signal of whole phase shifter, and circuit reaches output matching simultaneously.
In order to set forth the present invention better, carry out Detailed Description below, as shown in Figure 1, this phase shifter comprises: Input matching level, gain control and power distributing unit U1, orthogonal signalling generation unit U2, differential signal generation unit U3, U4, signal synthesis unit U5 and output Ba Lun;
When specific works, as shown in Figure 2, power distributing unit U1 as the first order of circuit, single-ended input signal through the matching network input circuit first order, transistor M athe common-source amplifier of composition carries out pre-amplification to signal, and the signal after amplification is divided into two-way to enter by transistor M after an inductance s1~ M s4the control unit of composition, this inductance can also improve the gain of whole circuit; M s1~ M s4open under the effect of control signal or turn off, being changed the size of signal gain on each branch road by the mode of this discrete control; Transistor M b1~ M b2composition isolated location, makes the output impedance of first order circuit also remain unchanged under different on off states, and last first order circuit exports two-way amplitude-controllable but the identical signal V of phase place 1, V 2; The two-way output signal of first order circuit (power distributing unit U1) is converted into the orthogonal signalling V of one group of phase 90 ° after orthogonal signalling generation unit U2 i, V q, adopt the orthogonal signalling of L-C height low-pass network to produce structure and can not only reduce the Insertion Loss of signal but also be conducive to reducing the chip area of circuit; The two-way output signal V of quadrature network i, V qinput differential signal generation unit U3, U4 respectively, every road signal is converted to one group of differential signal through inter-stage Ba Lun again after one-level common source amplifies, and is respectively V i -, V i +and V q -, V q +; Four tunnel orthogonal signalling V i -, V i +and V q -, V q +(meeting the phase place coverage that side circuit realizes 360 °) is input to signal synthesis unit U5 from transistor source class and combines under the effect of control signal, the polarity of rational selection composite signal and their size just can obtain the output signal of arbitrary phase, finally utilize output Ba Lun differential signal to be converted to single-ended signal and export.
Be illustrated in figure 3 the structural representation of inter-stage Ba Lun in the present embodiment, the present embodiment select up and down be coupled octagon loop construction and utilize the superiors in technology library double layer of metal design realize, in order to reduce power consumption, the simplification circuit structure of whole circuit, the ingenious technology adopting current multiplexing at inter-stage Ba Lun place of the present invention.As can be seen from Figure 3, subordinate's coil one termination input signal other end is through electric capacity AC earth, in order to give the direct voltage of common source transistors feed-in below, the centre cap of higher level's coil and the AC ground of subordinate's coil link together, whole like this Ba Lun just defines a DC channel, and the direct current (DC) bias of common source transistors drain electrode just no longer needs independent supply; The bulky capacitor of subordinate's coil ensures that the earth terminal of subordinate's coil is desirable ground connection to AC signal, and such AC signal would not flow into output by DC channel.
In order to carry out performance test easily, as shown in Figure 4, the present embodiment adopts and differential signal is converted to single-ended signal and with the output Ba Lun of impedance matching function, the main part exporting Ba Lun adopts the coil of two-stage up and down of octagon to realize equally, increases two-way parallel connection short circuit microstrip line simultaneously and realizes impedance adjustment.The balance of Ba Lun can be regulated by the size of centre tapped seat and upper and lower two-stage coil, and the impedance then by regulating the short-circuit micro-band line of input to regulate Ba Lun, realizes the matched well of Ba Lun and signal synthesis unit.
According to above-described embodiment, just can realize the present invention well, it is simple, low in energy consumption that above-described embodiment design obtains on-chip active phase shifter structure, and power gain is 2dB, effectively can overcome the shortcoming that millimeter wave frequency band has phase shifter power gain deficiency.
The above, be only the specific embodiment of the present invention, arbitrary feature disclosed in this specification, unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object; Step in disclosed all features or all methods or process, except mutually exclusive feature and/or step, all can be combined in any way.

Claims (6)

1. the on-chip active phase shifter based on Vector modulation, comprise power distributing unit, orthogonal signalling generation unit, two differential signal generation units, signal synthesis unit and output Ba Lun, wherein, the input of single ended signal input Power Distribution unit, input signal is divided into two-way in-phase signal to output to orthogonal signalling generation unit by power distributing unit, orthogonal signalling generation unit produces one group of orthogonal signalling and inputs two differential signal generation units respectively, each differential signal generation unit produces one group of differential signal input signal synthesis unit, two groups of differential signals are synthesized one group of differential signal input and output Ba Lun by signal synthesis unit, export Ba Lun and this differential signal is converted to Single-end output signal.
2. by the on-chip active phase shifter based on Vector modulation described in claim 1, it is characterized in that, described differential signal generation unit comprises input matching circuit, field effect transistor and inter-stage Ba Lun, described input matching circuit is made up of two inductance, described fet gate matching connection circuit, source class connect grounded inductor, drain electrode connects inter-stage Ba Lun, and single-ended signal is converted into differential signal by described inter-stage Ba Lun.
3. by the on-chip active phase shifter based on Vector modulation described in claim 2, it is characterized in that, described inter-stage Ba Lun comprises about two the octagon coils be coupled, wherein, the drain electrode of subordinate's coil one termination field effect transistor, other end ground connection, higher level's coil two ends export and the centre cap of higher level's coil is connected with the earth terminal of subordinate coil.
4. by the on-chip active phase shifter based on Vector modulation described in claim 1, it is characterized in that, described orthogonal signalling generation unit is made up of a Π type low-pass network and a T-shaped high pass network, described Π type low-pass network is by series inductance and be connected in parallel on two, these inductance two ends electric capacity and form, and the inductance that described T-shaped high pass network is connected between two electric capacity by two series capacitances and one end forms.
5. by the on-chip active phase shifter based on Vector modulation described in claim 1, it is characterized in that, described signal synthesis unit comprises the Gilbert cell circuit be made up of eight field effect transistor, and each fet gate is connected with ON-OFF control circuit and decoupling capacitor.
6. by the on-chip active phase shifter based on Vector modulation described in claim 1, it is characterized in that, described output Ba Lun comprises about two the octagon coils be coupled, wherein, the centre cap of higher level's coil connects the output port of signal synthesis unit and this centre cap is parallel with short-circuit micro-band line, and subordinate's coil one end exports, other end ground connection; The tap of higher level's hub of a spool is as direct current distributing point.
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CN109802652A (en) * 2019-01-10 2019-05-24 复旦大学 A kind of phase shifter of 5G phased array
CN110022165A (en) * 2018-01-05 2019-07-16 博通集成电路(上海)股份有限公司 Radio-frequency transceiver circuitry and its method with distributed inductance
CN110380707A (en) * 2019-06-14 2019-10-25 浙江大学 A kind of on piece Vector Modulation phase shifter
CN111884623A (en) * 2020-07-03 2020-11-03 中国电子科技集团公司第三十六研究所 Radio frequency difference phase shift quadrature circuit
CN113328728A (en) * 2021-06-02 2021-08-31 南京理工大学 High-precision active phase shifter based on time-varying vector synthesis
CN113572454A (en) * 2021-09-27 2021-10-29 广州慧智微电子有限公司 Multiphase phase shifter and multiphase phase shifting method
CN113572453A (en) * 2021-09-23 2021-10-29 广州慧智微电子有限公司 Multiphase phase shifter and multiphase phase shifting method
CN114499456A (en) * 2021-12-31 2022-05-13 电子科技大学 Broadband orthogonal signal generator based on two-stage hybrid
CN115833798A (en) * 2023-02-15 2023-03-21 南京沁恒微电子股份有限公司 High-linearity multi-bit phase interpolator

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CN105915196A (en) * 2016-05-17 2016-08-31 中国电子科技集团公司第三十八研究所 CMOS width active phase shifter circuit
CN105915196B (en) * 2016-05-17 2018-09-04 中国电子科技集团公司第三十八研究所 A kind of CMOS broadband actives phase shifter circuit
CN110022165B (en) * 2018-01-05 2021-02-26 博通集成电路(上海)股份有限公司 Radio frequency transceiver circuit with distributed inductance and method thereof
CN110022165A (en) * 2018-01-05 2019-07-16 博通集成电路(上海)股份有限公司 Radio-frequency transceiver circuitry and its method with distributed inductance
CN109802652A (en) * 2019-01-10 2019-05-24 复旦大学 A kind of phase shifter of 5G phased array
CN110380707A (en) * 2019-06-14 2019-10-25 浙江大学 A kind of on piece Vector Modulation phase shifter
CN111884623A (en) * 2020-07-03 2020-11-03 中国电子科技集团公司第三十六研究所 Radio frequency difference phase shift quadrature circuit
CN111884623B (en) * 2020-07-03 2024-03-22 中国电子科技集团公司第三十六研究所 Radio frequency difference phase shift quadrature circuit
CN113328728A (en) * 2021-06-02 2021-08-31 南京理工大学 High-precision active phase shifter based on time-varying vector synthesis
CN113328728B (en) * 2021-06-02 2022-09-27 南京理工大学 High-precision active phase shifter based on time-varying vector synthesis
CN113572453A (en) * 2021-09-23 2021-10-29 广州慧智微电子有限公司 Multiphase phase shifter and multiphase phase shifting method
CN113572454A (en) * 2021-09-27 2021-10-29 广州慧智微电子有限公司 Multiphase phase shifter and multiphase phase shifting method
CN114499456A (en) * 2021-12-31 2022-05-13 电子科技大学 Broadband orthogonal signal generator based on two-stage hybrid
CN114499456B (en) * 2021-12-31 2023-11-10 电子科技大学 Broadband orthogonal signal generator based on two-stage hybrid
CN115833798A (en) * 2023-02-15 2023-03-21 南京沁恒微电子股份有限公司 High-linearity multi-bit phase interpolator

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