CN207603578U - Ka frequency range GaN power amplifier linearization devices based on analog predistortion - Google Patents
Ka frequency range GaN power amplifier linearization devices based on analog predistortion Download PDFInfo
- Publication number
- CN207603578U CN207603578U CN201721827378.4U CN201721827378U CN207603578U CN 207603578 U CN207603578 U CN 207603578U CN 201721827378 U CN201721827378 U CN 201721827378U CN 207603578 U CN207603578 U CN 207603578U
- Authority
- CN
- China
- Prior art keywords
- driving
- power amplifier
- amplifier
- predistortion
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Amplifiers (AREA)
Abstract
The utility model discloses the Ka frequency range GaN power amplifier linearization devices based on analog predistortion, it is related to the power amplifier in the communications field.It is made of attenuator, driving amplifier, predistortion module etc..It is generated by the simulated pre-distortion circuit in predistortion module and the reciprocal pre-distorted signals of power amplifier distorted signal, for compensating the distorted signal of power amplifier.The power of power amplifier is adjusted by the cascade-connected attenuator before and after predistortion module and driving amplifier, directly grade linearization function of the amplifier front-end realization to solid-state power amplifier can be associated in practical applications.Improve traditional closed-loop it is consistent degree it is poor, it is complicated, it is of high cost the shortcomings that.Stability higher, bandwidth characteristic is good, can cope with the needs of multi-carrier signal modulation, and it is few to tune position, and debugging is simple, simple in structure to be easily integrated and install, of low cost, is particularly suitable for applying in GaN solid-state power amplifiers.
Description
Technical field
The utility model is related to the pre-distortion technology of communications field intermediate power amplifier, especially suitable for improving Ka frequency ranges
The non-linearization problem of dtmf distortion DTMF of the GaN solid-state power amplifiers of 29GHz~31GHz.
Background technology
GaN is the defect semiconductor material of high frequency, high pressure, high temperature and high-power applications as third generation semi-conducting material,
Gradually it is applied in power amplifier.Simultaneously for meeting higher rate transmission of large capacity data the needs of, modulation technique is normal
Using orthogonal frequency division multiplexi OFDM and orthogonal amplitude modulation technique such as 16QAM, 64QAM etc., this kind of efficient modulation techniques exist
In practical application, the amplitude and phase of overloading wave voltage often generate very high peak-to-average force ratio, this can cause millimeter wave power to put
Big device enters saturation workspace, so as to generate strong nonlinearity, causes the distortion of signal and the deterioration of spuious index, serious to restrict
The performance of Millimeter-wave Wireless Communication System, higher requirement all is proposed to the linearity of power amplifier.
Utility model content
The purpose of this utility model is that improve power amplifier band in existing non-linear and above-mentioned background technology in itself
The non-linear distortion of the power amplifier come, to improve the efficiency of power amplifier.It provides a kind of based on analog predistortion
Ka frequency range GaN power amplifier linearization devices, the utility model is wide with frequency range, and bandwidth characteristic is good, and stability higher can cope with overloading
The needs of wave signal modulation, and tuning position is few, debugging is simple.It is simple in structure to be easily integrated and install, it is of low cost.
What the purpose of this utility model was realized in：Ka frequency range GaN power amplifier linearization devices based on analog predistortion,
Including the driving of linearizer prime and the driving of linearizer rear class, predistortion module 5 is further included, the linearizer prime is driven
Dynamic, predistortion module and the driving of linearizer rear class cascade successively；
The predistortion module includes, input capacitance 6 and output capacitance 8, microstrip line 7, biasing resistor 10,
Pass through microstrip line 7 between first diode 12 and the second diode 18, the input capacitance 6 and output capacitance 8
It is connected, all respectively parallel connection is overlapped to microstrip line 7 for the first diode 12 and the second diode 18, and the biasing resistor 10 is logical
It crosses biasing high resistant line 9 to overlap to microstrip line 7, the overlapped points of biasing resistor 10 are located at the first diode 12 and the second diode 18
Between, biasing resistor 10 is connected with bias voltage 11.
Further, shunt capacitance 13 is further included, the shunt capacitance 13 is overlapped to microstrip line 7.
Further, linearizer prime driving is including cascade first wave guide microstrip transition 1, first can successively
Driving amplifier 4, the receiver port of predistortion module and second before driving amplifier 3, second before controlled attenuator 2, first
The signal sending end mouth of preceding driving amplifier 4 is connected.
Further, the driving of linearizer rear class is put including being driven after cascade second adjustable attenuator 14, first successively
Driving amplifier 16, second waveguide microstrip transition 17 after big device 15, second, the signal sending end mouth of predistortion module and second can
14 receiver port of controlled attenuator is connected.
The utility model has the following advantages compared with background technology：
1. the utility model applies a kind of new simulated pre-distortion circuit, use component composition open-loop chain few as possible
Road by two Schottky diode parallel connections, by changing bias voltage, biasing resistor, changes the electricity by Schottky diode
Stream, adjusts the nonlinear characteristic of diode, obtains the linearization curve of different degree of compensation, improve the non-linear of power amplifier
Distortion.At 30GHz, gain range compensation reaches 6.4dB, and gain-phase compensation reaches 28 °.
2. the utility model is improved traditional closed loop predistortion circuit, using open loop technique, stability higher, band
Wide characteristic is good, can cope with the needs of multi-carrier signal modulation, and it is poor to improve closed loop predistortion circuit stability, complicated,
The characteristics of of high cost.
3. the utility model is compact-sized, it is easily integrated and installs.It is small, it is at low cost, there is application value.
Description of the drawings
Fig. 1 is the functional-block diagram of the utility model.
Fig. 2 is the electrical schematic diagram of the utility model predistortion module circuit 4.
Reference sign：Driving amplifier 3, second before first wave guide microstrip transition 1, the first adjustable attenuator 2, first
Preceding driving amplifier 4, input capacitance 6, microstrip line 7, output capacitance 8, biases high resistant line 9, is inclined predistortion module 5
Put driving amplifier after resistance 10, bias voltage 11, the first diode 12, shunt capacitance 13, the second adjustable attenuator 14, first
15th, driving amplifier 16, second waveguide microstrip transition 17, the second diode 18 after second；
Two ports of 1 and 2 all acute pyogenic infection of finger tip modules in figure, the signal input of A, B, C acute pyogenic infection of finger tip.
Specific embodiment
Referring to figs. 1 to Fig. 2, the utility model before first wave guide microstrip transition 1, the first adjustable attenuator 2, first by driving
Driving amplifier 15, after driving amplifier 4, predistortion module 5, the second adjustable attenuator 14, first before amplifier 3, second
Driving amplifier 16, second waveguide microstrip transition 17 form after two.Fig. 1 is the functional-block diagram of the utility model embodiment, real
Example is applied by Fig. 1 connection circuits.Driving amplifier 4, before driving amplifier 3, second before wherein the first adjustable attenuator 2, first
Driving amplifier 16 after driving amplifier 15, second after two adjustable attenuators 14, first, adjustment input signal power is to suitable for work(
The input power of rate amplifier.First wave guide microstrip transition 1 is made of standard waveguide WR28.Second adjustable attenuator 14 uses
UMS companies MMIC attenuator chips CHT4694 drives before driving amplifier 3, second after driving amplifier 4 and first before first
Driving amplifier 16 uses the wideband low power chip AMMC-5040 of Agilent companies after amplifier 15, second.
As shown in the figure, Ka frequency range GaN power amplifier of the utility model core circuit predistortion module 5 based on analog predistortion
Linearizer including the driving of linearizer prime and the driving of linearizer rear class, further includes predistortion module 5, described is linear
Change the driving of device prime, predistortion module and the driving of linearizer rear class to cascade successively；
The linearizer prime driving includes cascade first wave guide microstrip transition 1, the first adjustable attenuator successively
2nd, driving amplifier 4 before driving amplifier 3, second before first drives before the receiver port of predistortion module and second and puts
The signal sending end mouth of big device 4 is connected.After the driving of linearizer rear class includes cascade second adjustable attenuator 14, first successively
Driving amplifier 16, second waveguide microstrip transition 17 after driving amplifier 15, second, the signal sending end mouth of predistortion module with
Second adjustable attenuator, 14 receiver port is connected.
The predistortion module includes, input capacitance 6 and output capacitance 8, microstrip line 7, biasing resistor 10,
Between first diode 12,13 and second diode 18 of shunt capacitance, the input capacitance 6 and output capacitance 8
It is connected by microstrip line 7, all respectively parallel connection is overlapped to microstrip line 7 for the first diode 12 and the second diode 18, and described is inclined
It puts resistance 10 and is overlapped by biasing high resistant line 9 to microstrip line 7, the overlapped points of biasing resistor 10 are located at the first diode 12 and
Between two diodes 18, biasing resistor 10 is connected with bias voltage 11, and the shunt capacitance 13 is overlapped to microstrip line 7.
Wherein medium substrate is made of RT/Duroid5880, and first/second diode generates non-linear distortion signal,
First/second diode uses the MA4E2037 of MA-COM companies, is integrated in circuit using co-planar waveguide.Input capacitance
6 and output capacitance 8 play blocking matching effect.The power for generating nonlinear properties can be changed by changing the value of shunt capacitance 13
Range.It can change the shape of non-linear distortion curve by adjusting the electrical length of microstrip line 7.Biasing high resistant line 9 can prevent
Radiofrequency signal is coupled into DC power supply terminal.Biasing resistor 10, bias voltage 11 control the bias current of two diodes, implement
Example biasing resistor 10 is replaceable when debugging, and bias voltage 11 uses 3.5V, and when debugging can more change.
The brief operation principle of the utility model is as follows：Signal is inputted by 1 first port of Waveguide-microbelt transition structure, from
Second port is exported to adjustable attenuator 2, and adjustable attenuator 2 connects the external reference a reference source of input port A, by portion's signal power
Attenuation adjustable is exported to preceding driving amplifier 3；Driving amplifier 3 is low-noise amplifier before first, the same second drive amplification
Device 4, adjustment receive the power of signal to suitable value, export to predistortion module 5；The letter that predistortion module 5 will receive
Number, by internal nonlinearity circuit, generate and the reciprocal nonlinear properties of solid-state power amplifier nonlinear distortion characteristics, output
To adjustable attenuator 14；Adjustable attenuator 14 adjusts power bracket by carrying out Attenuation adjustable to the signal power received
To suitable range, driving amplifier 16 after exporting to driving amplifier after first 15 and second；Driving amplifier 15 after first
With second after the signal that receives of driving amplifier 16 loss is produced during linearisation, two driving amplifiers are to being lost
It compensates, power is made to reach the power input range of power amplifier, finally exported by Waveguide-microbelt transition 17.
Claims (4)
1. the Ka frequency range GaN power amplifier linearization devices based on analog predistortion, after the driving of linearizer prime and linearizer
Grade driving, it is characterised in that：Further include predistortion module (5), linearizer prime driving, predistortion module and linear
Change the driving of device rear class to cascade successively；
The predistortion module includes, input capacitance (6) and output capacitance (8), microstrip line (7), biasing resistor
(10), the first diode (12) and the second diode (18), the input capacitance (6) and output capacitance (8) it
Between be connected by microstrip line (7), the first diode (12) and the second diode (18) are all respectively in parallel to be overlapped to microstrip line (7)
On, the biasing resistor (10) is by biasing on high resistant line (9) overlap joint to microstrip line (7), the overlapped points of biasing resistor (10)
Between the first diode (12) and the second diode (18), biasing resistor (10) is connected with bias voltage (11).
2. the Ka frequency range GaN power amplifier linearization devices according to claim 1 based on analog predistortion, it is characterised in that：Also
Including shunt capacitance (13), the shunt capacitance (13) is overlapped to microstrip line (7).
3. the Ka frequency range GaN power amplifier linearization devices according to claim 1 based on analog predistortion, it is characterised in that：Institute
The linearizer prime driving stated includes cascade first wave guide microstrip transition (1), the first adjustable attenuator (2), first successively
Driving amplifier (4) before preceding driving amplifier (3), second, drive amplification before the receiver port of predistortion module and second
The signal sending end mouth of device (4) is connected.
4. the Ka frequency range GaN power amplifier linearization devices according to claim 3 based on analog predistortion, it is characterised in that：Line
Property the driving of device rear class include driving amplifier (15), the second rear-guard after cascade second adjustable attenuator (14), first successively
Dynamic amplifier (16), second waveguide microstrip transition (17), the signal sending end mouth and the second adjustable attenuator of predistortion module
(14) receiver port is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721827378.4U CN207603578U (en) | 2017-12-25 | 2017-12-25 | Ka frequency range GaN power amplifier linearization devices based on analog predistortion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721827378.4U CN207603578U (en) | 2017-12-25 | 2017-12-25 | Ka frequency range GaN power amplifier linearization devices based on analog predistortion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207603578U true CN207603578U (en) | 2018-07-10 |
Family
ID=62766530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721827378.4U Active CN207603578U (en) | 2017-12-25 | 2017-12-25 | Ka frequency range GaN power amplifier linearization devices based on analog predistortion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207603578U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649896A (en) * | 2019-10-25 | 2020-01-03 | 电子科技大学 | Multi-band analog predistortion circuit applied to wireless communication |
| CN110752162A (en) * | 2018-07-23 | 2020-02-04 | 西安电子科技大学 | Pre-distortion integrated circuit based on X-band gallium nitride and manufacturing method |
| CN111064438A (en) * | 2019-12-25 | 2020-04-24 | 北京普能微电子科技有限公司 | Analog predistortion circuit, power amplifier and radio frequency module |
| CN112968675A (en) * | 2021-01-28 | 2021-06-15 | 重庆邮电大学 | Pre-distortion Doherty power amplifier based on variable capacitance diode loading composite left-right-hand transmission line |
-
2017
- 2017-12-25 CN CN201721827378.4U patent/CN207603578U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752162A (en) * | 2018-07-23 | 2020-02-04 | 西安电子科技大学 | Pre-distortion integrated circuit based on X-band gallium nitride and manufacturing method |
| CN110649896A (en) * | 2019-10-25 | 2020-01-03 | 电子科技大学 | Multi-band analog predistortion circuit applied to wireless communication |
| CN110649896B (en) * | 2019-10-25 | 2023-06-27 | 电子科技大学 | Multi-band analog predistortion circuit applied to wireless communication |
| CN111064438A (en) * | 2019-12-25 | 2020-04-24 | 北京普能微电子科技有限公司 | Analog predistortion circuit, power amplifier and radio frequency module |
| CN111064438B (en) * | 2019-12-25 | 2023-12-08 | 北京普能微电子科技有限公司 | Analog predistortion circuit, power amplifier and radio frequency module |
| CN112968675A (en) * | 2021-01-28 | 2021-06-15 | 重庆邮电大学 | Pre-distortion Doherty power amplifier based on variable capacitance diode loading composite left-right-hand transmission line |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207603578U (en) | Ka frequency range GaN power amplifier linearization devices based on analog predistortion | |
| Lavrador et al. | The linearity-efficiency compromise | |
| US8254854B2 (en) | Pulsed load modulation amplifier and method | |
| CN100555843C (en) | Linear power amplification circuit and method based on analog predistortion | |
| CN107517039B (en) | Millimeter wave GaN power amplifier radio frequency predistortion linearizer | |
| KR20150039240A (en) | Envelope tracking power transmitter using common-gate voltage modulation linearizer | |
| CN107231131B (en) | Doherty power amplifier capable of enlarging power back-off range | |
| EP2067253B1 (en) | Amplifier architecture for polar modulation | |
| CN102710222B (en) | Linear signal conditioning driving device for traveling wave tube | |
| CN105515539A (en) | Method for improving linearity of radio frequency power amplifier, compensating circuit and communication terminal | |
| US10122334B2 (en) | High efficiency ultra-wideband amplifier | |
| Martin et al. | Inphasing signal component separation for an X-band outphasing power amplifier | |
| Sano et al. | A 40W GaN HEMT Doherty power amplifier with 48% efficiency for WiMAX applications | |
| Viswanathan | Efficiency enhancement of base station power amplifiers using Doherty technique | |
| CN208572042U (en) | A kind of spaceborne miniaturization analog predistortion device | |
| CN113630092B (en) | Reflection type adjustable predistorter | |
| Haskins | Diode predistortion linearization for power amplifier RFICs in digital radios | |
| CN109150118A (en) | A kind of linearizer for travelling-wave tubes power amplifier pre-distortion | |
| CN113242023B (en) | Analog predistorter of field effect transistor series connection reflection type Schottky diode | |
| Choi et al. | 28.8 dBm, high efficiency, linear GaN power amplifier with in-phase power combining for IEEE 802.11 p applications | |
| Agah et al. | High-speed, high-efficiency millimeter-wave transmitters at 45 GHz in CMOS | |
| Roychowdhury et al. | 3.3-3.6 ghz phase exploited doherty power amplifier with parallel load combining network | |
| Dalwadi et al. | Efficient Doherty feed-forward linear power amplifier for CDMA 2000 base-station applications | |
| CN206712750U (en) | Linear predistortion circuit | |
| Sarbishaei | Concurrent multi-band envelope tracking power amplifiers for emerging wireless communications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |