CN207869072U - A kind of quasi- multi-chip power amplifier - Google Patents
A kind of quasi- multi-chip power amplifier Download PDFInfo
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- CN207869072U CN207869072U CN201721920610.9U CN201721920610U CN207869072U CN 207869072 U CN207869072 U CN 207869072U CN 201721920610 U CN201721920610 U CN 201721920610U CN 207869072 U CN207869072 U CN 207869072U
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Abstract
The utility model is related to electronic communication fields, more particularly to a kind of quasi- multi-chip power amplifier of cascade connection type, it provides a kind of quasi- multi-chip power amplifier, the composite module of composite module, amplifier tube core and output matching circuit and drain electrode biasing circuit including input matching circuit and gate bias circuit, the composite module of input matching circuit and gate bias circuit is connected to the grid of the amplifier tube core, and the drain electrode of the amplifier tube core is connected to the composite module of output matching circuit and the biasing circuit that drains；The amplifier tube core is for being amplified input signal；The biasing circuit is used to carry out chokes to radiofrequency signal and provides grid voltage for amplifier tube core.On the one hand using GaAs material while cost-effective, be conducive to amplifier miniaturization.On the other hand active power amplifier tube core is made using gallium nitride material, meets power amplifier and the high frequency of material, high-power and high heat conductance is required.
Description
Technical field
The utility model is related to electronic communication fields, and in particular to a kind of quasi- multi-chip power amplifier of cascade connection type.
Background technology
Power amplifier is as one of component part important in all kinds of radio systems such as communication, radar, and performance is very
The quality of overall performance is determined in big degree.With the development of active phased array technology and wireless communication technique, system is to work(
The demand of rate amplifier is increasing, while requiring its volume, cost, efficiency and linearity etc. also higher and higher.
The realization method of conventional power amplifier is generally divided into two kinds, and one is mixed based on integrated circuit and discrete component
Integrated circuit is closed, advantage is flexible design, at low cost, the disadvantage is that volume is big, debugging amount is big；Another is that microwave chip is integrated
Circuit (MMIC), all components are integrated on a single die, and advantage is that consistency is good, stability is good, small, the disadvantage is that
Development cost is high, it is more to be limited by special process.MMIC advantages such as good, small with stability, are widely used in power and put
In the design and use of big device.The main substrate material for making MMIC has GaAs (GaAs) material and gallium nitride (GaN) material.
Relative to GaAs materials, the main advantage of GaN power amplifier chip shows active GaN power tubes：Using GaN works
It puts and guarantees adequate food and electron velocity is high, breakdown voltage is big, thermal conductivity is high, these advantages are not available for GaAs power tubes.But
In the design and use of GaN power amplifier chip, often passive device especially inductance area occupied is more so that chip face
Product is larger, and GaN material is due to its dielectric constant etc., and the area of match circuit is more than GaAs, in addition material
Intrinsic cost is higher than GaAs so that the cost of GaN chip amplifiers is higher.Power amplifier is to realize required high power,
Multi-stage power amplifier cascade is generally required, this relates to the connection between preceding stage power amplifier and rear class and matching.Often
The method seen be separately design amplification and the match circuit of front and back stage power amplifier, then by the output of preceding stage power amplifier with
The input of final-stage power amplifier cascades.Export powerful quasi- multi-chip power amplifiers of GaN as rear class, input matching and
Biasing circuit can still be made using GaAs materials, then be connect with pre-amplifier.Preceding stage power amplifier does not often need
Prodigious power is exported, the making of GaAs materials disclosure satisfy that requirement, and stage power amplifier cannot play completely before being made of GaN
The advantage of GaN, while cost being caused to increase.
Utility model content
Technical problem to be solved in the utility model is to overcome the power amplifier of previous hydrid integrated circuit design not
The problem for using GaN material cost of manufacture high completely conducive to miniaturization and power amplifier.
Technical solution adopted by the utility model to solve its technical problems is：A kind of quasi- multi-chip power amplifier is provided,
Composite module, amplifier tube core and output matching circuit including input matching circuit and gate bias circuit are biased with drain electrode
The composite module of the composite module of circuit, the input matching circuit and gate bias circuit is connected to the amplifier tube core
Grid, the drain electrode of the amplifier tube core are connected to the composite module of output matching circuit and the biasing circuit that drains；The amplification
Device tube core is for being amplified input signal；The input/output match circuit is used for amplifier tube core input/output impedance
With input/output end port ohms impedance match；The gate/drain biasing circuit is used to carry out chokes to radiofrequency signal.
Further, the input matching circuit include T-type mating structure, at least two-way micro-strip mating structure and with it is micro-
With the spun gold of way, the T-type mating structure, at least two-way micro-strip mating structure and spun gold are sequentially connected band structure.
Further, the T-type mating structure is made of micro-strip TL1, TL2 shunt capacitance C2.
Further, the gate bias circuit is made of shunt capacitance after resistance and micro-strip series connection, gate bias electricity
Road is for inhibiting radio-frequency input signals to provide grid from the feed power end leakage of amplifier tube core grid and for the amplifier tube core
Pole tension；The drain electrode biasing circuit is made of micro-strip shunt capacitance, for inhibiting output signal to be let out to drain electrode feed power end
Leakage, while providing drain voltage for amplifier tube core.
Further, input unit of the composite module of the input matching circuit and gate bias circuit as amplifier
Point, the grid of amplifier tube core is connected to by spun gold or gold ribbon.
Further, output section of the composite module of the output matching circuit and drain electrode biasing circuit as amplifier
Point, the drain electrode of amplifier tube core is connected to by spun gold or gold ribbon.
Further, further include preceding stage power amplifier, the preceding stage power amplifier and the input matching circuit with
The input terminal of the composite module of gate bias circuit connects.
Further, driving stage GaAs Power amplification tube core, the arsenic are integrated on the preceding stage power amplifier
The drain electrode of gallium power amplification tube core is connected with the feed circuit composed in parallel by capacitance and micro-strip；Grid is connected with prime power and puts
The big prime input matching circuit of device and the composite module of biasing circuit.
Further, the amplifier tube core is active gallium nitride chip.
Further, the input/output match circuit, gate/drain biasing circuit manufacture material include GeSi materials
Material, SiC material, diamond and high resistant silicon materials.
The utility model has the beneficial effects that：On the one hand the input of stage power amplifier is defeated before being made of GaAs material
Go out the passive circuits such as matching, biasing circuit and feedback circuit, it can be while cost-effective, by material rear class quasi core piece of the same race
The input matching circuit of power amplifier is integrated on prime power amplifier chip, breaks through original breakthrough hydrid integrated circuit point
Vertical element design method is more conducive to amplifier miniaturization again.On the other hand active power amplification is made using gallium nitride material
Device tube core, anti-breakdown voltage is big, and saturated electrons rates is high, thermal conductivity is high, meets power amplifier to the high frequency of material, high-power
With high heat conductance requirement.
Description of the drawings
Fig. 1 is a kind of two-way combiner circuit figure of quasi- multi-chip power amplifier embodiment of the utility model one；
Fig. 2 is a kind of four road combiner circuit figures of quasi- multi-chip power amplifier embodiment of the utility model one；
Fig. 3 is a kind of eight road combiner circuit figures of quasi- multi-chip power amplifier embodiment of the utility model one；
Fig. 4 is a kind of two-way combiner circuit figure of quasi- multi-chip power amplifier embodiment of the utility model two；
Fig. 5 is a kind of four road combiner circuit figures of quasi- multi-chip power amplifier embodiment of the utility model two；
Fig. 6 is a kind of eight road combiner circuit figures of quasi- multi-chip power amplifier embodiment of the utility model two.
Specific implementation mode
The utility model is described in further detail with reference to specific embodiment, but the embodiment party of the utility model
Formula is without being limited thereto.
The utility model embodiment one is as shown in Figs. 1-3, provides a kind of quasi- multi-chip power amplifier, including input matching electricity
The combination die of the composite module of road and gate bias circuit, amplifier tube core and output matching circuit and drain electrode biasing circuit
Importation of the composite module of block, the input matching circuit and gate bias circuit as amplifier, by spun gold or gold
Grid of the band connection to amplifier tube core；The composite module of the output matching circuit and drain electrode biasing circuit is as amplifier
Output par, c is connected to the drain electrode of amplifier tube core by spun gold or gold ribbon；The amplifier tube core be used for input signal into
Row amplification；The input/output match circuit is hindered for amplifier tube core input/output impedance and input/output end port ohm
Anti- matching；The gate/drain biasing circuit is used to carry out chokes to radiofrequency signal.
It is highly preferred that input matching circuit include T-type mating structure, at least two-way micro-strip mating structure and with micro-strip knot
With the spun gold of way, the T-type mating structure, at least two-way micro-strip mating structure and spun gold are sequentially connected structure.The wherein described T
Type mating structure is made of micro-strip TL1, TL2 shunt capacitance C2.
It is highly preferred that shunt capacitance is constituted after gate bias circuit is connected by resistance and micro-strip, which uses
In inhibiting radio-frequency input signals grid electricity is provided from the feed power end leakage of amplifier tube core grid and for the amplifier tube core
Pressure；Drain electrode biasing circuit is made of micro-strip shunt capacitance, for inhibiting output signal to drain electrode feed power end leakage, is simultaneously
Amplifier tube core provides drain voltage.
It is as Figure 4-Figure 6 that the utility model also provides another embodiment, and front stage circuits are not unlike embodiment one
It is single input matching biasing circuit again, but by the input of GaAs Power amplifier and gallium nitride power amplifier tube core
Match circuit combines to form preceding stage power amplifier, and the amplification of driving stage GaAs Power is integrated on the preceding stage power amplifier
The drain electrode of tube core, the GaAs Power amplification tube core is connected with the feed circuit composed in parallel by capacitance and micro-strip；Grid connects
The prime input matching circuit of stage power amplifier and the composite module of biasing circuit before being connected to.Wherein the amplifier passes through gold again
The connection of front stage circuits and gallium nitride power amplifier tube core is realized in silk or gold ribbon interconnection.
It is highly preferred that amplifier tube core is active GaN (gallium nitride) chip.Active power is made using gallium nitride material to put
Big device tube core meets power amplifier and requires the high frequency of material, high-power and high heat conductance；It is made of GaAs material defeated
Enter the passive circuits such as output matching, biasing circuit and feedback circuit, reduces chip cost.Alternative way includes by front stage electricity
Road chip uses GeSi materials (silicon based hetero-junction structure material), SiC material (carbofrax material), diamond and High Resistivity Si material
Expect to realize.
The circuit that driving stage is only first stage amplifier is only gived in figure, can also use multistage amplification form.Embodiment
One two-way synthesizes quasi- power amplifier as shown in Figure 1, the quasi- power amplifier of two-way synthesis is put primarily directed to single GaN power
Big device die power scarce capacity, and two same dies is used to carry out power combing.Rf inputs are by input matching network
It is constituted with gate bias circuit, capacitance C1, microstrip line TL1, TL2 and C2, microstrip line TL3, TL4, TL5, TL6 and spun gold (band) resistance
Anti- matching network realizes that GaN amplifier tube core grid impedances are conjugated to 50 ohm of matching features of input impedance (such as amplifier tube
Core grid optimum impedance is R1+j*X1, then matching network realizes that impedance R1-j*X1 is converted into 50 ohm), it is completed at the same time input and swashs
It encourages signal power to divide equally, by inputting TL5, TL6 and TL3, two paths of TL4 are respectively fed into amplifier tube core gate input.Grid
Pole biasing circuit is made of series resistance TL7, R1, microstrip line TL7, shunt capacitance C4, is carried out chokes to radiofrequency signal, is inhibited to penetrate
Frequency input signal provides grid voltage to grid feed power end leakage for GaN amplifier tube cores.Match circuit and grid are inclined
Circuits collectively form the importation of amplifier, by spun gold or gold ribbon access power amplifier chip grid (spun gold or gold ribbon
Influence need to incorporate matching network).GaN amplifier tube core source electrodes are grounded, and drain electrode is connected to rear end output by spun gold or gold ribbon
The composite module of match circuit and drain electrode biasing circuit.Late-class circuit structure is similar with prime, by microstrip line TL8, TL9, TL10,
TL11, TL12, C5 constitute matching network, realize the best conjugate impedance of GaN amplifier tube cores drain electrode to 50 ohm of resistances of output port
Anti- mapping function (such as amplifier tube core grid optimum impedance is R2+j*X2, then matching network realizes impedance R2-j*X2 transformation
To 50 ohm), it is completed at the same time two-way output signal power synthesis (being exported by TL8, TL9 and TL10, TL10 two-way).Microstrip line
TL12, C5 constitute GaN amplifier tube cores drain electrode biasing circuit, inhibit output signal to drain electrode feed power end leakage, are simultaneously
Amplifier tube core provides drain voltage and electric current.
Four tunnels of embodiment one synthesize schematic diagram such as Fig. 2 designed by quasi- power amplifier, and four tunnels synthesize quasi- power amplifier
It is still insufficient primarily directed to two GaN power amplifier tube core synthesis power capabilities, and four same dies is used to carry out power
Synthesis.Four tube core cascade forms are not drawn all in Fig. 2, and such as Fig. 1 form cascade structures, rf inputs are by input pair net
Network and gate bias network are constituted.The T-type mating structure of TL1, TL2 and C2 composition is connected after rf inputs capacitance C1,
The two-way T-type work(separation structure in parallel being made of respectively TL3, TL4, C4 and TL18, TL19 and C8 later, while realizing that impedance becomes
It changes, two groups of parallel connection TL6, TL7 and TL8, TL9 series connection microstrip lines again after TL3, TL4, C4, composition two-way power divider structure, simultaneously
Two groups of TL21, TL22 and TL23, TL24 series connection microstrip line parallel connections access TL18, TL19 and C8, form other two-way power splitter.Four
Lu Gongfen is connected by spun gold or gold ribbon with GaN power amplifier tube core grid respectively.It includes resistance to input biasing networks major function
Resistance changes and carries out power distribution to input signal.Gate bias circuit is made of (another connect TL5 and R1, parallel connection C6
Routing series connection TL20 and R2, parallel connection C9 are constituted), provide grid voltage to radiofrequency signal chokes and for GaN amplifier tube cores.GaN
Power amplifier tube core source electrode is directly grounded, and drain electrode is connected in parallel TL10, TL11 by spun gold or gold ribbon respectively, TL12, TL13,
TL25, TL26, tetra- groups of series connection microstrip line networks of TL27, TL28, TL10, TL11, TL12, TL13 concatenate TL14 and constitute power later
Synthesis, is completed at the same time the function of 50 ohmages transformation, TL25, TL26, and TL27, TL28 then concatenate TL29 and constitute another way later
Power combing, the matching network structure that access TL16, TL17 and C12 are constituted after the synthesis of TL14 and TL19 two-way, realizes power
Synthesis and impedance matching are exported eventually by capacitance C13.GaN power amplifier tube core drain biasing circuit by TL15 and
C10 is constituted, and another way is made of TL30 and C11, plays the effect of chokes feed.
Eight tunnels of embodiment one synthesize quasi- power amplifier schematic diagram such as Fig. 3, and eight tunnels synthesize quasi- power amplifier and are mainly
It is still insufficient for four GaN power amplifier tube core synthesis power capabilities, and eight same dies is used to carry out power combing.Figure
Eight pipe cascade forms are not drawn all in 3, and such as Fig. 1 form cascade structures, rear figure is similarly.Rf inputs capacitance C1
The T-type mating structure of connection TL1, TL2 and C2 compositions afterwards, parallel connection is respectively by TL3, TL4, C4 and TL19, TL20 and C15 groups later
At two-way T-type work(separation structure, while realize 50 ohmages transformation.After TL3, TL4, C4 two-way in parallel respectively by TL6,
The two-way T-type structure of TL7, C7 and TL8, TL9 and C9 compositions.TL6, TL7, C7 in parallel two-way TL11, TL12 and TL13, TL14 again
Work(separation structure completes impedance matching and power distribution.Two-way TL15, TL16 in parallel after the T-type structure of TL8, TL9 and C9 composition
With TL17, TL18 work(separation structure.And parallel connection two-way is respectively by TL22, TL23, C13 and TL24, TL25 after TL19, TL20, C15
With the two-way T-type structure of C17 compositions.Parallel connection two-way TL27, TL28 and TL29, TL30 work(separation structures after TL22, TL23, C13,
Complete impedance matching and power distribution.TL24, TL25 and C17 composition T-type structure after parallel connection two-way TL31, TL32 and
TL33, TL34 work(separation structure.Four groups of identical structures of gate bias circuit, respectively by TL5 and R1, the parallel connection C5 of connecting；Series connection
TL10 and R2, parallel connection C11；Series connection TL21 and R3, parallel connection C12 and series connection TL26 and R4, parallel connection C19 are constituted, and are gripped radiofrequency signal
It flows and provides grid voltage for GaN amplifier tube cores.Eight road work(separation structures are connected to GaN power amplifications by spun gold or gold ribbon respectively
Device tube core grid.GaN power amplifier tube core source electrode is directly grounded.Drain electrode connects TL36, TL37 by spun gold or gold ribbon respectively,
TL38, TL39, TL40, TL41, TL42, TL43, TL44, TL45, TL46, TL47, TL48, TL49, eight groups of micro-strips of TL50, TL51
Gauze network constitutes the output of GaN power amplifier tube core.TL52, TL40, TL41 are concatenated after TL36, TL37 and TL38, TL39
TL53 is concatenated later with TL42, TL43, realizes power combing and impedance transformation.TL52 and TL53 again with TL59, TL60 and C21 group
At T-type network collectively constitute power combining structures, be completed at the same time impedance transformation.It is concatenated after TL44, TL45 and TL46, TL47
TL57 is concatenated after TL56, TL48, TL49 and TL50, TL51, realizes power combing and impedance transformation.TL56 and TL57 again with
The T-type network of TL61, TL62 and C24 composition collectively constitutes power combining structures, is completed at the same time impedance transformation.TL59, TL60 and
The T-type of TL63, TL64 and C26 composition is accessed after the T-type network of C21 compositions and the T-type network of TL61, TL62 and C24 composition
Network is exported after realizing impedance transformation and final power combing by capacitance C27.GaN power amplifier tube core leaks
Pole biasing circuit constitutes (another three tunnel is made of TL54 and C22, TL55 and C23, TL58 and C25 respectively) by TL35 and C20, plays
The effect of chokes feed.
The two-way of embodiment two synthesizes as shown in figure 4, prime chip is inputted by prime GaAs power amplifiers and GaN tube cores
Matching and biasing circuit two parts are constituted.Wherein prime GaAs power amplifiers are by input matching (TL1, TL2 and C2 are formed), defeated
Go out matching (TL3, TL4, C5 and C4 are formed), the prime output matching can also be the input matching of rear class, biasing circuit (string
Join TL5 and R1, parallel connection C3 is constituted) and feed circuit (series connection TL6 and parallel connection C6 are constituted)；GaN tube cores input mating structure by two
Road TL7 series connection TL8 and TL9 series connection TL10 is constituted, and plays the function of power distribution and impedance transformation；GaN tube cores biasing circuit by
The TL11 and parallel connection C8 that connects is constituted, and access GaN tube core grids by spun gold or gold ribbon provides bias voltage for tube core.GaN tube cores
Source electrode is directly grounded, and drain electrode is connected in parallel by spun gold or gold ribbon and exports knot by the two-way that TL12, TL13 and TL14, TL15 are constituted
Structure concatenates TL17, TL18 and parallel connection C9 later, common to complete output impedance matching and power combing, eventually by capacitance
C10 is exported.
Four tunnels of embodiment two synthesize as shown in figure 5, prime chip is inputted by prime GaAs power amplifiers and GaN tube cores
Matching and gate bias circuit two parts are constituted.Wherein prime GaAs power amplifiers match (TL1, TL2 and C2 group by input
At), output matching (TL3, TL4, C5 and C4 form), biasing circuit (series connection TL5 and R1, parallel connection C3 compositions) and feed circuit
(series connection TL6 and parallel connection C6 are constituted)；The input matching of GaN amplifier tube cores is by TL7, TL8, C7 and TL14 in parallel, TL15 and C8
The two-way T-type work(separation structure of composition is constituted, and realizes the transformation of 50 ohmages, after TL7, TL8, C7 again parallel connection TL10, TL11 and
Two groups of series connection microstrip lines of TL12, TL13 form two-way power divider structure, while two groups of TL17, TL18 and TL19, TL20 series connection are micro-
Band line parallel connection accesses TL14, TL15 and C8, forms other two-way power splitter.Four road work(point are respectively by spun gold or gold ribbon and GaN work(
Rate amplifier tube core grid is connected.Biasing circuit be made of connect TL9 and R3, parallel connection C16 (another way by series connection TL16 and R2,
C9 in parallel is constituted), provide grid voltage to radiofrequency signal chokes and for GaN amplifier tube cores.GaN power amplifier tube core source electrode
It is directly grounded, drain electrode is connected in parallel TL22, TL23, TL24, TL25, TL26, TL27 and TL28, TL29 by spun gold or gold ribbon respectively
Four groups of series connection microstrip line networks, TL26, TL27 and TL28, TL29 concatenate TL31 and constitute power combing later, are completed at the same time 50 Europe
TL25, TL26 and TL27, the function of nurse impedance transformation then concatenates TL32 after TL28 and constitutes another way power combing, TL31 and
The matching network structure that access TL33, TL34 and C14 are constituted after the synthesis of TL32 two-way, realizes power combing and impedance matching,
It is exported eventually by capacitance C15.GaN power amplifier tube core drain feeding network be made of TL21 and C12 (another way by
TL30 and C13 is constituted), play the effect of chokes feed.
Eight tunnels of embodiment two synthesize as shown in fig. 6, prime chip is inputted by prime GaAs power amplifiers and GaN tube cores
Matching and biasing circuit two parts are constituted.Wherein prime GaAs power amplifiers are by input matching (TL1, TL2 and C2 are formed), defeated
Go out matching (TL3, TL4, C5 and C4 are formed), biasing circuit (series connection TL5 and R1, parallel connection C3 are constituted) and feed circuit (series connection TL6
It is constituted with C6 in parallel)；The input matching of GaN amplifier tube cores is made of two-way TL7, TL8, C7 and TL23 in parallel, TL24 and C14
T-type work(separation structure, while realize 50 ohmages transformation.Parallel connection two-way is respectively by TL9, TL10, C9 after TL7, TL8, C7
With the two-way T-type structure of TL11, TL12 and C10 composition.TL11, TL12 and C10 then in parallel two-way TL19, TL20 and TL21,
TL22 work(separation structures complete impedance matching and power distribution.In parallel two-way TL15 after the T-type structure of TL9, TL10, C9 composition,
TL16 and TL17, TL18 series connection work(separation structure.And after TL23, TL24, C14 in parallel two-way respectively by TL25, TL26, C13 and
The two-way T-type structure of TL27, TL28 and C16 composition.Parallel connection two-way TL31, TL32 and TL33, TL34 after TL25, TL26, C13
Series connection work(separation structure, completes impedance matching and power distribution.Two-way in parallel after the T-type structure of TL27, TL28 and C16 composition
TL35, TL36 and TL37, TL38 series connection work(separation structures.Eight road work(separation structures are connected to GaN power by spun gold or gold ribbon respectively and put
Big device tube core grid.Biasing circuit is four groups of identical structures, respectively by TL13 and R2, the parallel connection C8 of connecting；Series connection TL14 and R3,
C11 in parallel；Series connection TL29 and R4, parallel connection C12 and series connection TL30 and R5, parallel connection C17 are constituted, and to radiofrequency signal chokes and are GaN
Amplifier tube core provides grid voltage.GaN power amplifier tube core source electrode is directly grounded.Drain electrode is in parallel by spun gold or gold ribbon respectively
Connect TL40, TL41, TL42, TL43, TL44, TL45, TL46, TL47, TL48, TL49, TL50, TL51, TL52, TL53,
Eight groups of series connection microstrip line networks of TL54, TL55 constitute the output of GaN power amplifier tube core.TL40, TL41 and TL42, TL43
TL57 is concatenated later, TL58 is concatenated after TL45, TL44 and TL46, TL47, realizes power combing and impedance transformation.TL57 and
T-type networks of the TL58 again with TL65, TL66 and C24 composition collectively constitutes power combining structures, is completed at the same time impedance transformation.
TL60 is concatenated after TL48, TL49 and TL50, TL51, TL61 is concatenated after TL52, TL53 and TL54, TL55, realizes that power closes
It is converted at impedance.T-type networks of the TL60 and TL61 again with TL63, TL64 and C23 composition collectively constitutes power combining structures, together
When complete impedance transformation.The T-type network that the T-type network of TL65, TL66 and C24 composition is formed with TL63, TL64 and C23 is followed by
Enter the T-type network of TL67, TL68 and C25 composition, after realizing impedance transformation and final power combing, passes through capacitance
C27 is exported.GaN power amplifier tube core drain feeding network be made of TL39 and C19 (another three tunnel respectively by TL59 and C20,
TL69 and C21, TL62 and C22 are constituted), play the effect of chokes feed.
Though the utility model is disclosed with preferred embodiment, such as above-mentioned two-way, four tunnels, eight tunnels synthesize quasi- power amplifier, so
It is not intended to limit the scope of the utility model, and can also be realized by other ways.In the utility model technical field
Those of ordinary skill, without departing from the spirit and scope of the utility model, when various change and retouch can be done.Therefore, originally
The protection domain of utility model is subject to the those as defined in claim before regarding.
Claims (10)
1. a kind of quasi- multi-chip power amplifier, it is characterised in that：Combination die including input matching circuit and gate bias circuit
The composite module of block, amplifier tube core and output matching circuit and drain electrode biasing circuit, the input matching circuit and grid
The composite module of biasing circuit is connected to the grid of the amplifier tube core, and the drain electrode of the amplifier tube core is connected to output
Composite module with circuit with drain electrode biasing circuit；The amplifier tube core is for being amplified input signal；The input
Match circuit is for the input impedance of amplifier tube core and input port ohms impedance match；The output matching circuit is for amplifying
Device tube core output impedance and output port ohms impedance match；The gate bias circuit or drain electrode biasing circuit are used for radio frequency
Signal carries out chokes.
2. quasi- multi-chip power amplifier as described in claim 1, it is characterised in that：The input matching circuit includes T-type
Distribution structure, at least two-way micro-strip mating structure and with microstrip structure with the spun gold of way, the T-type mating structure, at least two
Road micro-strip mating structure and spun gold are sequentially connected.
3. quasi- multi-chip power amplifier as claimed in claim 2, it is characterised in that：The T-type mating structure by micro-strip TL1,
TL2 shunt capacitances C2 is constituted.
4. quasi- multi-chip power amplifier as described in claim 1, it is characterised in that：The gate bias circuit is by resistance and micro-
Shunt capacitance is constituted after band series connection, and the gate bias circuit is for inhibiting radio-frequency input signals to feed electricity from amplifier tube core grid
Source leaks and provides grid voltage for the amplifier tube core；The drain electrode biasing circuit is made of micro-strip shunt capacitance, is used
It is leaked in inhibiting output signal to feed power end to drain electrode, while drain voltage is provided for amplifier tube core.
5. quasi- multi-chip power amplifier as described in claim 1, it is characterised in that：The input matching circuit and gate bias
Importation of the composite module of circuit as amplifier, the grid of amplifier tube core is connected to by spun gold or gold ribbon.
6. quasi- multi-chip power amplifier as described in claim 1, it is characterised in that：The output matching circuit and drain electrode bias
Output par, c of the composite module of circuit as amplifier, the drain electrode of amplifier tube core is connected to by spun gold or gold ribbon.
7. quasi- multi-chip power amplifier as described in claim 1, it is characterised in that：Further include preceding stage power amplifier, it is described
Preceding stage power amplifier is connect with the input terminal of the input matching circuit and the composite module of gate bias circuit.
8. quasi- multi-chip power amplifier as claimed in claim 7, it is characterised in that：It is integrated on the preceding stage power amplifier
Driving stage GaAs Power amplifies tube core, and the drain electrode of the GaAs Power amplification tube core is connected with by capacitance and micro-strip parallel connection group
At feed circuit；The prime input matching circuit of stage power amplifier and the composite module of biasing circuit before grid is connected with.
9. the quasi- multi-chip power amplifier as described in any claim in claim 1-8, it is characterised in that：The amplifier
Tube core is active gallium nitride chip.
10. the quasi- multi-chip power amplifier as described in any claim in claim 1-8, it is characterised in that：The input
Match circuit, output matching circuit, gate bias circuit and drain biasing circuit manufacture material include GeSi materials, SiC
Material, diamond and high resistant silicon materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721920610.9U CN207869072U (en) | 2017-12-29 | 2017-12-29 | A kind of quasi- multi-chip power amplifier |
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| CN201721920610.9U CN207869072U (en) | 2017-12-29 | 2017-12-29 | A kind of quasi- multi-chip power amplifier |
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| CN207869072U true CN207869072U (en) | 2018-09-14 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860166A (en) * | 2019-03-08 | 2019-06-07 | 成都嘉晨科技有限公司 | Interior matching gallium nitride multi-chip integrated power amplification module |
| CN109995338A (en) * | 2017-12-29 | 2019-07-09 | 成都华光瑞芯微电子股份有限公司 | A kind of quasi- multi-chip power amplifier |
| CN116073774A (en) * | 2022-12-12 | 2023-05-05 | 苏州科技大学 | GaN HEMT-based high-linearity microwave power amplifier |
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2017
- 2017-12-29 CN CN201721920610.9U patent/CN207869072U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109995338A (en) * | 2017-12-29 | 2019-07-09 | 成都华光瑞芯微电子股份有限公司 | A kind of quasi- multi-chip power amplifier |
| CN109860166A (en) * | 2019-03-08 | 2019-06-07 | 成都嘉晨科技有限公司 | Interior matching gallium nitride multi-chip integrated power amplification module |
| CN116073774A (en) * | 2022-12-12 | 2023-05-05 | 苏州科技大学 | GaN HEMT-based high-linearity microwave power amplifier |
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