CN204788749U - F -P pressure sensor with compound dielectric thin film - Google Patents
F -P pressure sensor with compound dielectric thin film Download PDFInfo
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- CN204788749U CN204788749U CN201520493298.4U CN201520493298U CN204788749U CN 204788749 U CN204788749 U CN 204788749U CN 201520493298 U CN201520493298 U CN 201520493298U CN 204788749 U CN204788749 U CN 204788749U
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Abstract
The utility model discloses a F -P pressure sensor with compound dielectric thin film, including making the last lock pin that has the F -P resonant cavity, connect firmly lower lock pin as an organic whole and insert with last lock pin axial the optic fibre of lower lock pin, and the cover is in the pressure diaphragm of F -P resonant cavity port. The pressure diaphragm back and it has the compound deielectric -coating of at least one deck to grow on the silicon chip of F -P resonant cavity recess bottom, compound deielectric -coating is the multilayered film of the at least a combination form among siO2Ta2O5 film, si3N4Ta2O5 film or the siO2Ta2O5Si3N4. The utility model discloses simple structure, preparation convenient and fast, it is with low costs, there is higher heat stability. The utility model discloses at the pressure diaphragm back and the compound deielectric -coating of last lock pin grooved underside growth, be connected formation F -P resonant cavity through pressure diaphragm and last lock pin, mate the reflectivity of system, not only heat stability is good for this kind of combination complex deielectric -coating, can make up the reflectivity that satisfied the system requirements according to the designing requirement simultaneously.
Description
Technical field
The present invention relates to a kind of Fabry-perot optical fiber (F-P) sensor being widely used in the physical quantities such as temperature, strain, vibration and pressure, particularly relate to a kind of F-P pressure transducer with composite dielectric film.
Background technology
Fibre Optical Sensor, using light as information carrier, using optical fiber as letter transmission medium, carries out sensing measurement to tested parameter.The electrical insulating property that it has had, strong anti-electromagnetic interference capability, also has high temperature resistant, high pressure, corrosion resistance characteristic simultaneously, and can use under the rugged surroundings such as inflammable and explosive.Optical fiber Fabry-Fa Po (F-P) sensor is the important branch of in Fibre Optical Sensor.The sensing unit of fiber F-P resonator cavity pressure transducer is fiber F-P resonator cavity, after light enters fiber F-P cavity, will reflect multiple reflections between end faces, form multiple-beam interference spectrum two.When carrying out pressure test, the change of ambient pressure causes the change of fiber F-P Resonant Intake System, thus causes multiple-beam interference spectrum to change, and utilizes outside demodulated equipment to calculate force value.It is simple that fibre-optical F-P sensor has structure, volume is little, high reliability, high sensitivity, response time is short, the advantages such as single fiber Signal transmissions receive the general concern of people, also have wide practical use in the health monitoring of the buildingss such as petrochemical complex, Aero-Space and bridge simultaneously, are one of current study hotspots.
The fundamental measurement principle of overwhelming majority F-P sensor is all measured as basis with pressure (pressure), and such as ultrasonic measurement is exactly the change of a kind of dynamic pressure measured caused by acoustical signal; Magnetic-field measurement is also first by magnetostriction materials, magnetic field is converted into stress to measure etc.The usual of optical fiber F-P pressure sensor is made up of quartz ampoule and single-mode fiber.The external diameter of single-mode fiber is 125m, the internal diameter of quartz ampoule is that 126m. two section single-mould fibers (SMF1 and SMF2) inserts in quartz ampoule, two fiber end faces are as required at a distance of the scope that can arrive hundreds of micron tens, centre is air-gap, an external cavity type F-P interference cavity is formed in quartz ampoule, two folded light beams come from the end face of SMF1 and SMF2 respectively, in SMF1, form interference fringe.At quartz ampoule two ends by quartz ampoule together with bonding fiber, if there is External Force Acting, can there is deformation in quartz ampoule, and being equivalent to the long S in chamber has a small change.For F-P fibre optic compression sensor; according to the requirement of its measurement range and resolution; need the temperature coefficient controlling sensor. in several influence factor; having the greatest impact with bonded adhesives; by controlling gluing mode, can significantly improve its temperature sensitivity, if but can not meet the demands by controlling gluing mode; then should consider by welding mode, optical fiber and quartz ampoule to be welded together, but this kind of method requires that technique is higher; Second factor is that the air in chamber expands with heat and contract with cold, certain pressure is produced in interference cavity, meeting partial offset or reinforcement outside pressure, solution adopts open cavity, can the optical fiber only playing reflex be changed into Holey optical fibres, and extend in outside air, can in holding chamber atmospheric pressure constant.
SU-8 composite pressure sensor is the pressure transducer of external a kind of comparative maturity, has had apply widely in insertion type biomedicine.But because SU-8 compound substance is not encapsulant, can introduce other error source in micro-system, material also has the problem such as sluggishness and drift, has a certain impact to the performance of sensor simultaneously.Diaphragm sluggishness, sealing problem, reflection horizon layering also likely make this sensor stability poor.
At present, Fibre Optical Sensor is towards microminiaturization, low cost, adverse environment resistant and practical future development.The research level of China and the leading level in the world also have no small gap, and most of kind is still in the laboratory development stage, can not drop into batch production and through engineering approaches application.
Diaphragm type F-P resonant cavity structural theory can obtain higher sensitivity, but still there is many defects in the technology that can make highly sensitive diaphragm at present on fiber end face, as complex process, material temperature and mechanical characteristic difference etc.At present, the sensing head of the pressure transducer of diaphragm-type optical-fiber F-P resonant cavity adopts micro electronmechanical (MEMS) technology processing and fabricating usually, this method machining precision is high, be able to batch production, as described in China Patent Publication No. CN103644987A, CN103698080A, the pressure-sensitive diaphragm glass groove of silicon materials is connected to form F-P resonant cavity by the mode of anode linkage, the reflectance spectrum of the F-P resonant cavity bottom surface of the measurement passed through and the resonator cavity of pressure-sensitive diaphragm, measures extraneous pressure.But F-P pressure transducer also also exists difficulties at present, and the pressure transducer of traditional fiber F-P resonant cavity is all grow one deck single-layer dielectric film in the bottom surface of lock pin groove (to be generally Ta
2o
5), this structure also exists the problem of two aspects:
1), single-layer dielectric film (is generally Ta
2o
5) thermal stability poor, along with the change of temperature, deielectric-coating causes its surface to occur uneven owing to expanding with heat and contract with cold, cause the pressure transducer of fiber F-P resonator cavity to produce along with the additional chamber of temperature variation is long, and then cause sensor accuracy to reduce.
2) the mass reflex rate of the F-P resonant cavity, by single deielectric-coating and the exposed silicon chip of lock pin groove formed is difficult to meet the requirement of demodulating system signal to noise ratio (S/N ratio), causes the overall accuracy of current F-P pressure transducer lower, is generally less than 0.1%FS.In order to promote the synthesis precision of sensor further, need the reflectivity at optimal design F-P resonant cavity two ends.
Summary of the invention
The object of the invention is the weak point existed for prior art, there is provided a kind of Heat stability is good, precision is high, good reliability, and with the F-P pressure transducer of composite dielectric film, bring precise decreasing problem to solve current optical fiber F-P pressure sensor by thermal stability and reflectivity.
Above-mentioned purpose of the present invention can adopt following technical scheme to realize: a kind of F-P pressure transducer with composite dielectric film, comprise the upper lock pin being shaped with F-P resonant cavity, the lower lock pin be axially fixedly connected with upper lock pin and the optical fiber inserting described lower lock pin, and cover the pressure-sensitive diaphragm of F-P resonant cavity port, it is characterized in that: have at least one deck composite dielectric film at the back side of described pressure-sensitive diaphragm and F-P resonant cavity bottom portion of groove grown above silicon, described composite dielectric film is SiO
2/ Ta
2o
5film, Si
3n
4/ Ta
2o
5film or SiO
2/ Ta
2o
5/ Si
3n
4in the multilayer film of at least one combination form.
The present invention has following beneficial effect compared to prior art.
The present invention adopts a kind of new composite dielectric film as the reflectance coating of optical fiber F-P pressure sensor resonator cavity, this composite dielectric film SiO
2/ Ta
2o
5/ Si
3n
4in at least one combined material there is the characteristic of inorganic material, hardness is high, Heat stability is good, good springiness, bond by force with glass substrate material, with existing MEMS fine process compatibility, reproducible, can manufacture in enormous quantities, be suitable for commercial production.
The present invention can promote the signal to noise ratio (S/N ratio) of optical fiber F-P pressure sensor further, improves the precision of system.At the pressure-sensitive diaphragm back side, growth has composite dielectric film and the growing mixed deielectric-coating of upper lock pin groove floor in the present invention, F-P resonant cavity is connected to form by pressure-sensitive diaphragm and upper lock pin, the reflectivity of matching system, can be met the reflectivity of system requirements simultaneously according to designing requirement combination.Employing MEMS technology processes the F-P pressure transducer with composite dielectric film, and device sensitivity and precision comparatively quartz film sheet type sensor improve about two orders of magnitude.
The present invention adopts at the growing mixed deielectric-coating of groove floor, replaces single deielectric-coating, can solve and bring precise decreasing problem by thermal stability and reflectivity with it.The present invention adopts SiO
2/ Ta
2o
5/ Si
3n
4in the multilayer film mechanical characteristic of at least one combination form good, mechanical sensitivity is high, Heat stability is good, reproducible, high with bond glass intensity, and thickness controllability is good.This sensor had both possessed higher signal to noise ratio (S/N ratio), turn avoid circuit noise and electromagnetic interference (EMI) simultaneously, medically can be used for pressure detection and oral artificial tooth pressure detection in human body, the industrial pressure detection that can be used under hot environment.
Accompanying drawing explanation
Fig. 1 is the system architecture schematic cross-sectional view of the present invention with the F-P pressure transducer of composite dielectric film.
In figure: lock pin, 4 times lock pins on 1 pressure-sensitive diaphragm, 2 composite dielectric films, 3,5 optical fiber.
Fig. 2: the reflected light spectrogram of optical fiber F-P pressure sensor under different reflectivity.
In figure: the LED light source that (a), (c) are corresponding, the wideband light source that (b), (d) are corresponding.
Embodiment
In the embodiment shown in fig. 1, F-P pressure transducer with composite dielectric film is made up of pressure-sensitive diaphragm 1, composite dielectric film 2, upper lock pin 3, lower lock pin 4 and optical fiber 5, wherein, upper lock pin 3 is interconnected into entirety with lower lock pin, optical fiber 5 part inserts lower lock pin 4, another part is positioned at outside lower lock pin, is connected with demodulated equipment as conduction optical fiber.The growth of pressure-sensitive diaphragm 1 back side has composite dielectric film (2) and has the growth of lock pin on groove (3) groove floor composite dielectric film 2.Pressure-sensitive diaphragm 1 and upper lock pin 3 are connected to form F-P resonant cavity.Upper lock pin 3 and lower lock pin 4 are interconnected into entirety.At least one deck composite dielectric film of the pressure-sensitive diaphragm back side and the growth of described F-P resonant cavity bottom portion of groove, the composite dielectric film at the described pressure-sensitive diaphragm back side is or silicon nitride Si
3n
4, tantalum pentoxide Ta
2o
5multilayer film, or SiO
2, Ta
2o
5, Si
3n
4multilayer film, groove floor composite dielectric film is SiO
2, Ta
2o
5multilayer film, or Si
3n
4, Ta
2o
5multilayer film, or SiO
2, Ta
2o
5, Si
3n
4multilayer film.
Further, using the silicon chip in 100 crystal orientation as pressure-sensitive diaphragm 1, pressure-sensitive diaphragm 1 thickness is 50-300um.
Further, at least one deck Si is grown in the sputtering of silicon chip one side
3n
4/ Ta
2o
5film, the thickness of multilayer film is 50/100nm.
Further, at least one deck SiO is grown in upper lock pin 3 groove floor sputtering
2/ Ta
2o
5/ Si
3n
4film, the thickness of multilayer film is 50/100/60nm.
Processing technology step with the method for making of the F-P pressure transducer of composite dielectric film is as follows: choose without warpage, surface smoothness good (fluctuating is less than 1nm), using the high-quality silicon chip in 100 crystal orientation as pressure-sensitive diaphragm 1, thickness is 50-300um, grows at least one deck Si in the sputtering of silicon chip one side
3n
4/ Ta
2o
5film, the thickness of multilayer film is 50/100nm; Utilize standard MEMS processes, according to designing requirement, groove is made to upper lock pin 3, sputter at least one deck SiO in upper lock pin 3 groove floor growth simultaneously
2/ Ta
2o
5/ Si
3n
4film, the thickness of multilayer film is 50/100/60nm; By anode linkage technique, pressure-sensitive diaphragm 1 and upper lock pin 3 are connected to form F-P resonant cavity; Conduction optical fiber 5 one end is fully ground smooth, and fixing with the jack of lower lock pin 4, and flush with the top of lower lock pin 4; Utilize laser bonding or glue technique to be connected with lower lock pin 4 by upper lock pin 3, complete the making of fiber F-P resonator cavity pressure transducer.The light that light source sends impinges perpendicularly on F-P resonant cavity by conduction optical fiber, part luminous power is by the composite dielectric film end face reflection of upper lock pin 3 groove floor, after all the other Transmission light, arrive pressure-sensitive diaphragm 1, by the composite dielectric film end face reflection of pressure-sensitive diaphragm 1 lower end, the composite dielectric film end face reflection light of groove floor and the composite dielectric film end face reflection light of pressure-sensitive diaphragm lower end interfere.According to thin flexible film deformation principle, deformation is there is in the pressure-sensitive diaphragm 1 as pressure sensitive film under the effect of ambient pressure, thus it is long to change F-P cavity chamber, interference spectum is caused to change, by measuring interference spectrum, demodulation is carried out to interference spectrum, the pressure change acted on pressure sensitive film can be obtained.
The principle that the present invention improves optical fiber F-P pressure sensor system signal noise ratio and precision is as follows:
The reflectivity of the composite dielectric film end face of the F-P resonant cavity pressure-sensitive diaphragm lower end of optical fiber F-P pressure sensor is
r1, the reflectivity of the composite dielectric film end face of upper lock pin 3 groove floor is
r2, because surface reflectivity is lower, multiple-beam interference can be approximated to be two-beam interference, and last total light intensity can be expressed as:
I=I
0 ,
Wherein n represents the refractive index of F-P resonant cavity, and d represents that the chamber of F-P resonant cavity is long, and I
0represent the intensity of light source, for LED light source:
, for wideband light source: I
0=C
0, wherein C
0for constant.
Fig. 2 be the total light intensity I of optical fiber F-P pressure sensor system along with
r1 and R2change sharply change, can according to the requirement of system, at the composite dielectric film of pressure-sensitive diaphragm and groove floor design different structure, make the signal to noise ratio (S/N ratio) of system reach optimal value, thus improve the precision performance of optical fiber F-P pressure sensor.
Although describe the present invention in detail with reference to above-described embodiment, should be appreciated that the present invention is not limited to the disclosed embodiments.
Claims (9)
1. the F-P pressure transducer with composite dielectric film, comprise the upper lock pin being shaped with F-P resonant cavity, the lower lock pin be axially fixedly connected with upper lock pin and the optical fiber inserting described lower lock pin, and cover the pressure-sensitive diaphragm of F-P resonant cavity port, it is characterized in that: have at least one deck composite dielectric film at the back side of described pressure-sensitive diaphragm and F-P resonant cavity bottom portion of groove grown above silicon, described composite dielectric film is SiO
2/ Ta
2o
5film, Si
3n
4/ Ta
2o
5film or SiO
2/ Ta
2o
5/ Si
3n
4in the multilayer film of at least one combination form.
2. the F-P pressure transducer with composite dielectric film according to claim 1, it is characterized in that: using the silicon chip in 100 crystal orientation as pressure-sensitive diaphragm (1), pressure-sensitive diaphragm (1) thickness is 50-300um.
3. the F-P pressure transducer with composite dielectric film according to claim 2, is characterized in that: grow at least one deck Si in the sputtering of silicon chip one side
3n
4/ Ta
2o
5film, the thickness of multilayer film is 50/100nm.
4. the F-P pressure transducer with composite dielectric film according to claim 1, is characterized in that: grow at least one deck SiO in the sputtering of upper lock pin (3) groove floor
2/ Ta
2o
5/ Si
3n
4film, the thickness of multilayer film is 50/100/60nm.
5. the F-P pressure transducer with composite dielectric film according to claim 1, is characterized in that: by anode linkage technique, pressure-sensitive diaphragm (1) and upper lock pin (3) are connected to form F-P resonant cavity; To conduct optical fiber (5) one end fully grinds smooth, fixing with the jack of lower lock pin (4), and flushes with the top of lower lock pin (4); Utilize laser bonding or glue technique to be connected with lower lock pin (4) by upper lock pin (3), complete the making of fiber F-P resonator cavity pressure transducer.
6. the F-P pressure transducer with composite dielectric film according to claim 1, it is characterized in that: the light that light source sends impinges perpendicularly on F-P resonant cavity by conduction optical fiber, part luminous power is by the composite dielectric film end face reflection of upper lock pin (3) groove floor, after all the other Transmission light, arrive pressure-sensitive diaphragm (1), by the composite dielectric film end face reflection of pressure-sensitive diaphragm (1) lower end, the composite dielectric film end face reflection light of groove floor and the composite dielectric film end face reflection light of pressure-sensitive diaphragm lower end interfere.
7. the F-P pressure transducer with composite dielectric film according to claim 1, it is characterized in that: the pressure-sensitive diaphragm (1) as pressure sensitive film, under the effect of ambient pressure, deformation occurs, change F-P cavity chamber long, interference spectum is caused to change, by measuring interference spectrum, demodulation is carried out to interference spectrum, the pressure change acted on pressure sensitive film can be obtained.
8. the F-P pressure transducer with composite dielectric film according to claim 1, is characterized in that: the reflectivity of the composite dielectric film end face of F-P resonant cavity pressure-sensitive diaphragm lower end is
r1, the reflectivity of the composite dielectric film end face of upper lock pin 3 groove floor is
r2, folding multiple-beam interference is two-beam interference, and total light intensity I is:
I=I
0 ,
Wherein, n is the refractive index of F-P resonant cavity, and d is that the chamber of F-P resonant cavity is long, I
0for the intensity of light source.
9. the F-P pressure transducer with composite dielectric film according to claim 8, is characterized in that: for LED light source:
, for wideband light source: I
0=C
0, wherein C
0for constant.
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| CN201520493298.4U CN204788749U (en) | 2015-07-10 | 2015-07-10 | F -P pressure sensor with compound dielectric thin film |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105606277A (en) * | 2016-02-23 | 2016-05-25 | 成都凯天电子股份有限公司 | Integrated fiber F-P chamber pressure sensor |
| CN106323516A (en) * | 2015-07-10 | 2017-01-11 | 成都凯天电子股份有限公司 | F-P pressure sensor with compound dielectric film |
| CN108291849A (en) * | 2015-11-29 | 2018-07-17 | 可调谐红外科技公司 | Optical pressure sensor |
| CN110487454A (en) * | 2019-09-18 | 2019-11-22 | 大连理工大学 | A kind of miniature film chip optical fiber end FP pressure sensor, production method and application |
| CN112212897A (en) * | 2019-07-12 | 2021-01-12 | 清华大学 | Photoacoustic sensor, photoacoustic detection system, method, device, and storage medium |
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2015
- 2015-07-10 CN CN201520493298.4U patent/CN204788749U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106323516A (en) * | 2015-07-10 | 2017-01-11 | 成都凯天电子股份有限公司 | F-P pressure sensor with compound dielectric film |
| CN106323516B (en) * | 2015-07-10 | 2022-04-22 | 成都凯天电子股份有限公司 | F-P pressure sensor with composite medium film |
| CN108291849A (en) * | 2015-11-29 | 2018-07-17 | 可调谐红外科技公司 | Optical pressure sensor |
| CN108291849B (en) * | 2015-11-29 | 2020-05-22 | 可调谐红外科技公司 | Optical pressure sensor |
| CN105606277A (en) * | 2016-02-23 | 2016-05-25 | 成都凯天电子股份有限公司 | Integrated fiber F-P chamber pressure sensor |
| CN112212897A (en) * | 2019-07-12 | 2021-01-12 | 清华大学 | Photoacoustic sensor, photoacoustic detection system, method, device, and storage medium |
| CN112212897B (en) * | 2019-07-12 | 2021-12-03 | 清华大学 | Photoacoustic sensor, photoacoustic detection system, method, device, and storage medium |
| CN110487454A (en) * | 2019-09-18 | 2019-11-22 | 大连理工大学 | A kind of miniature film chip optical fiber end FP pressure sensor, production method and application |
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