CN106959269A - The chip bonding strength meter and method of a kind of simplification - Google Patents
The chip bonding strength meter and method of a kind of simplification Download PDFInfo
- Publication number
- CN106959269A CN106959269A CN201710198144.6A CN201710198144A CN106959269A CN 106959269 A CN106959269 A CN 106959269A CN 201710198144 A CN201710198144 A CN 201710198144A CN 106959269 A CN106959269 A CN 106959269A
- Authority
- CN
- China
- Prior art keywords
- chip
- pressure
- measured
- chip bonding
- bonding strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005259 measurement Methods 0.000 claims abstract description 28
- 239000000835 fiber Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 230000006835 compression Effects 0.000 claims abstract description 14
- 238000007906 compression Methods 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 239000000565 sealant Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 17
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 239000013307 optical fiber Substances 0.000 claims description 9
- 238000001228 spectrum Methods 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 210000005239 tubule Anatomy 0.000 claims 1
- 238000000691 measurement method Methods 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 208000010392 Bone Fractures Diseases 0.000 description 1
- 206010017076 Fracture Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N19/00—Investigating materials by mechanical methods
- G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
- G01L1/242—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet the material being an optical fibre
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Measuring Fluid Pressure (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
Abstract
The present invention proposes the chip bonding strength meter and method of a kind of simplification, and simplified chip bonding strength meter includes chip to be measured, capillary glass tube, Transmission Fibers, compression fittings, pressure entrance, base, sealing ring, shell, fluid sealant.Chip bonding strength measurement method proposed by the present invention comprises the following steps：1st, apply appropriate initial pressure to described bond strength measurement device using pressure source, and record spectral information now；2nd, suitable pressurization step-length is selected, the pressure value that pressure source para-linkage strength meter applies is improved；3rd, the pressure value that pressure source applies is reduced to 0, observation spectrometer displays whether still there is interference signal；If still there is signal, repeat the 2nd step and disappeared until falling spectrometer interference signal after pressure；If no signal, the pressure value applied in previous step is the maximum pressure value that can be born after chip bonding to be measured, directly reflects the bond strength of chip.
Description
Technical field
It is the chip bonding strength meter for being related to a kind of simplification specifically the present invention relates to sensory field of optic fibre
And method.
Background technology
Bonding is a kind of indispensable technology in semiconductor fabrication, is widely deployed special in precision manufactureing technique
In not being the machinery of electronic product and being electrically connected.Especially during MEMS (MEMS) development ＆ production, encapsulation is
The key technology of its volume, life-span and cost is finally determined, and a class technology mostly important in method for packing is exactly to be bonded skill
Art.Thus the intensity of bonding structure determines the application size and service life length of MEMS system.Just because of this, accurately
Measurement chip bonding intensity in ground is just particularly important.
Up to the present, for the measurement of chip bonding intensity, domestic and international scientific research personnel proposes some measuring methods.Such as
, (Maszara W P, the Goetz G, " Bonding of silicon wafer for silicon- such as Maszara in 1988
on-insulator”.J.Appl.Phys.1988,64(10):Crack-opening method 4943-4950.) is proposed, by by knife
Piece Intercalative binding position simultaneously measures crack length to measure bond strength.But blade insertion is typically artificial progress, blade
The factor such as insertion speed, mode, the measuring environment of insertion can all influence measurement result.Nineteen ninety, Charalambides etc.
(Charalambides P G,Cao HC,Lund J,Evans AG,“Devel-opment of a testmethod
formeasureing the mixed mode frac-ture resisance of biomaterial interfaces”
.Mech.Mater.1990,8(4):Four-point bending demixing technology 269-283.) is proposed, passes through the fulcrum support of bottom two, top two
The method of pressure spot pressure measures bond strength.This method is more accurate compared with crack-opening method, but its measurement range by
Limit, after annealing temperature reaches 900 DEG C~1000 DEG C, bond strength may lead to not beyond the measurement range of this method
Measurement.Bond strength measuring method the most frequently used at present is vertical pulling method, but its measurement range is by bonding chip and pulling force handle
Between adhesive material limitation, when bond strength be more than adhesive viscous viscosity when, pulling force handle will divide in chip to be measured
Depart from before with chip to be measured, so as to lead to not measurement.This method, as adhesive, can be measured usually using epoxy resin
Maximum bond strength be about 80MPa.Meanwhile, vertical pulling method hanging down particularly between pulling force and bonded interface to the precision of test equipment
Straight degree, the axiality of chip upper and lower surface to be measured bonding and the depth of parallelism require very high, hardly result in accurate measurement result.
The content of the invention
The invention aims to overcome deficiency of the prior art, there is provided a kind of chip bonding ionization meter of simplification
Device and method, also proposed chip bonding strength measurement system and its measuring method in addition, by accurately measure Fabry-
The variable quantity of Perot cavity, is accurately obtained pressure values when chip to be measured splits, so as to realize the measurement to chip bonding intensity.
The purpose of the present invention is achieved through the following technical solutions：
A kind of chip bonding strength meter of simplification, the device includes chip to be measured, capillary glass tube, transmission light
Fibre, compression fittings, pressure entrance, base, sealing ring, shell and fluid sealant；Wherein：
The chip to be measured is made through diaphragm and substrate sheet bonding, and wherein diaphragm experiences pressure as flexible sheet, simultaneously
It is used as second reflecting surface of Fabry-Perot-type cavity；Substrate sheet surface center erosion has a microcavity, microcavity bottom as Fabry-
First reflecting surface of Perot cavity, the corrosion depth of microcavity determines the initial length of Fabry-Perot-type cavity；
Connected between the chip to be measured and capillary glass tube by laser welding mode；The capillary glass tube and base it
Between connected by sealant sealing；It is tightly connected between the base and compression fittings by sealing ring, shell leads to compression fittings
Cross screw thread and provide support with base is merged into.
The bonding pattern of the chip to be measured include anode linkage, eutectic bonding, thermocompression bonding, stick together bonding, glass weld
Material bonding and low-temperature bonding.
The bottom shape of the chip to be measured includes circular, rectangle and polygon；The upper surface shape of the capillary glass tube
The bottom shape of shape and chip to be measured mutually agrees with；The material of capillary glass tube is Pyrex or fused silica material.
The species of Transmission Fibers includes single-mode fiber and multimode fibre.
A kind of preparation method of the chip bonding strength meter of simplification, comprises the following steps：
(1) diaphragm to be bonded, substrate sheet are cut into required shape；10~100 μm of the corrosion depth in substrate sheet
Microcavity, diaphragm, substrate sheet are bonded；
(2) capillary glass tube is bonded as one with base using fluid sealant, chip supporting structure is made；
(3) chip supporting structure is placed in laser welding apparatus, makes capillary glass tube upper surface and chip to be measured
Lower surface is overlapped and is brought into close contact, and is welding as one both using laser；
(4) Transmission Fibers of well cutting are inserted from capillary glass tube bottom, makes Transmission Fibers upper surface and chip to be measured
Lower surface is fitted；Finely tune Transmission Fibers position and interference signal is observed by spectrometer, by gluing when interference signal is most strong
Agent constant transmissions fiber position；
(5) after base side wall installs sealing ring additional, in the circular groove for being assemblied in compression fittings rear end；
(6) shell is screwed on, the making of the chip bonding strength meter is completed.
A kind of chip bonding strength measurement system of the chip bonding strength meter composition of simplification, the system includes white
Radiant, chip bonding strength meter, pressure source, three-dB coupler, spectrometer and optical fiber, wherein：
The white light source send optically coupling to optical fiber, it is strong into the chip bonding after a three-dB coupler
Degree measurement apparatus is simultaneously incident to chip to be measured；After substrate sheet and diaphragm reflection, the reflected light with chamber long message is returned to
Three-dB coupler, afterwards into spectrometer, chamber long value now can be calculated by recording the spectral information of reflected light；It is described
Chip bonding strength meter is arranged on the pressure export of pressure source.
The measuring method of the chip bonding strength measurement system, comprises the following steps：
(1) apply initial pressure to described bond strength measurement device using pressure source, and record spectrum letter now
Breath；
(2) selection pressurization step-length, improves the pressure value that pressure source para-linkage strength meter applies；
(3) pressure value that pressure source applies is reduced to 0, observation spectrometer has displayed whether interference signal：If so, repeating to walk
Suddenly (2) disappear until falling spectrometer interference signal after pressure；If nothing, the pressure value applied in previous step is chip to be measured
The maximum pressure value that can be born after bonding, reflects the bond strength of chip, while can be calculated by the spectroscopic data of record
Pressure value applied in previous step.
Compared with prior art, the beneficial effect that technical scheme is brought is：
1. chip bonding strength measurement method proposed by the present invention is surveyed by the way of fluid pressure is applied to chip
Amount, applies pressure uniformly, measurement process is controllable, and requires relatively low to the mechanical precision of system；Pass through multiple-beam interference principle pair
Small Fabry-Perot-type cavity length is measured, and further increases Measurement reliability and precision.
2. chip bonding strength measurement method proposed by the present invention can be used to measurement include anode linkage, eutectic bonding,
Thermocompression bonding, the bond strength for sticking together various bonding patterns including bonding, glass solder bonding, low-temperature bonding etc.；Tested
Chip includes variously-shaped；Short-term, long-term bond strength of the bonding chip in various media can be measured.
Brief description of the drawings
Fig. 1 is the structural representation of chip bonding strength meter of the present invention；
Fig. 2 is the structural representation of chip to be measured in the present invention；
Fig. 3 is the structural representation of chips bond strength measuring system of the present invention；
Fig. 4 is the stress diagram of chip to be measured in embodiment of the present invention measurement process；
Fig. 5 is the schematic diagram of embodiment of the present invention chips bond strength measuring system；
Fig. 6 is the reflectance spectrum figure that embodiment of the present invention chips bond strength measuring system is obtained；
Reference：1st, chip to be measured, 2, Laser Welding contact, 4, compression fittings, 6, pressure entrance, 8, pilot liquid, 9,
Transmission Fibers, 10, base, 11, sealing ring, 14, shell, 15, capillary glass tube, 16, fluid sealant, 17, diaphragm, 18, Fabry-
Perot cavity, 19, substrate sheet, 20, white light source, 21, chip bonding strength meter, 22, three-dB coupler, 23, pressure source,
24th, spectrometer, 25, optical fiber, 26, chip bonding position, 27, lateral pressure, 28, piston-type pressure source
Embodiment
The invention will be further described below in conjunction with the accompanying drawings：
Embodiment 1：A kind of embodiment of chip bonding strength meter
As depicted in figs. 1 and 2, in chip bonding strength meter of the present invention, chip 1 to be measured is through diaphragm 17 and substrate sheet
19 bondings are made, and wherein diaphragm 17 experiences pressure as flexible sheet, while being used as second reflection of Fabry-Perot-type cavity 18
Face；It is that corrosion has microcavity before bonding in substrate sheet 19, microcavity bottom is reflected as first of Fabry-Perot-type cavity 18
Face, the corrosion depth of microcavity determines the initial length of Fabry-Perot-type cavity 18.Capillary glass tube 15 passes through with chip 1 to be measured
The mode of laser welding is connected, and is formed with Laser Welding contact 2, as the compression support substrate of chip 1 to be measured, while being also transmission
The fixing device of optical fiber 9.Transmission Fibers 9 are inserted through the bottom of capillary glass tube 15, and its ends cutting is smooth and with chip 1 to be measured
Fit bottom surface.Sealed between capillary glass tube 15 and base 10 by fluid sealant 16, sealing ring is passed through between base 10 and compression fittings 4
11 sealings, the top of compression fittings 4 is provided with pressure entrance 6, and shell 14 and compression fittings 4 are matched somebody with somebody by screw thread to be merged into base 10 and provide
Support.
The light that white light source 20 is sent occurs anti-for the first time through the incident chip 1 to be measured of Transmission Fibers 9 in corrosion microcavity bottom surface
Penetrate, occur to include optical path difference information in the second secondary reflection, the formation interference of this two beams reflected light, interference signal in the bottom surface of diaphragm 17,
And the optical path difference is 2 times of corresponding cavity length.When the pressure that pressure source 23 applies is acted on by pilot liquid 8 on chip 1 to be measured
When, diaphragm 17 deforms, so as to change the bottom surface of diaphragm 17 with corroding the distance between microcavity bottom surface i.e. Fabry-Perot-type cavity
Chamber is long, and pressure value when chip 1 to be measured splits can be precisely calculated by the spectroscopic data of record.
Embodiment 2：High-precision wide-measuring range chip bonding strength measurement method is demodulated with spectrum
The chip bonding strength measurement system being made up of Fig. 1 chips bond strength measurement device 21 is as shown in figure 3, this is
System includes white light source 20, chip bonding strength meter 21, pressure source 23, three-dB coupler 22, spectrometer 24 and optical fiber
25；By the specific embodiment of chip bonding strength measurement system as shown in Figure 5, to illustrate this chip bonding strength measurement method
Embodiment.In system shown in Figure 5, pressure source 23 is using piston-type pressure source 28.
White light source 20 send optically coupling to optical fiber 25, after a three-dB coupler 22, into chip bonding intensity
Measurement apparatus 21 simultaneously incides chip 1 to be measured；After being reflected through diaphragm 17 and substrate sheet 19, the reflected light with chamber long message is again
Three-dB coupler 22 is returned to, afterwards into spectrometer 24.Scanned by spectrometer 24 and obtain the spectrum that sensor is returned, Fig. 6 is this
The spectrum that chip bonding strength meter is measured by spectrometer；By the peak for asking for spectral envelope, you can obtain
The chamber long message of fiber Fabry-Pérot cavity 18, the relational expression that Fabry-Perot-type cavity length is interfered between spectrum is：Wherein, d represents that Fabry-Perot-type cavity is long, λ1,λ2Two peaks of spectral envelope are represented respectively.
Chip bonding strength meter 21 is arranged on the pressure export in piston-type pressure source 28.When piston-type pressure source
When 28 pressure applied are acted on chip 1 to be measured by pilot liquid 8, diaphragm 17 deforms, so as to change diaphragm 17
Bottom surface is that Fabry-Perot-type cavity chamber is long with corroding the distance between microcavity bottom surface, the relational expression of Fabry-Perot-type cavity length and pressure
For：Δ d is the long variable quantity of Fabry-Perot-type cavity, and P represents pressure, and E is the Young mould of diaphragm 17
Amount, ν is the Poisson's ratio of diaphragm 17, and B is the diameter of corrosion microcavity, and C is the thickness of diaphragm 17.
When carrying out bond strength measurement, its method is：
1st, apply appropriate initial pressure to chip bonding strength meter 21 using piston-type pressure source 28, and remember
The spectral information of record now；The initial cavity that can calculate Fabry-Perot-type cavity 18 by the spectrum now recorded is long.
2nd, suitable pressurization step-length is selected, the pressure that the para-linkage strength meter 21 of piston-type pressure source 28 applies is improved
Force value；
3rd, the pressure value that piston-type pressure source 28 applies is reduced to 0, observation spectrometer 24 displays whether still have interference to believe
Number；If still there is signal, repeat the 2nd step and disappeared until falling the interference signal of spectrometer 24 after pressure；It is now to be measured if no signal
The chip bonding position 26 of chip 1 is crushed (see Fig. 4) by lateral pressure 27, and pilot liquid 8 comes into Fabry-Perot-type cavity
In 18.The pressure value then applied in previous step is the maximum pressure value that can be born after chip bonding to be measured, directly reflects core
The bond strength of piece, while the pressure applied in previous step can be precisely calculated by the spectroscopic data recorded in previous step
Value.
The present invention is not limited to embodiments described above.The description to embodiment is intended to describe and said above
Bright technical scheme, above-mentioned embodiment is only schematical, is not restricted.This is not being departed from
In the case of invention objective and scope of the claimed protection, one of ordinary skill in the art may be used also under the enlightenment of the present invention
The specific conversion of many forms is made, these are belonged within protection scope of the present invention.
Claims (7)
1. the chip bonding strength meter of a kind of simplification, it is characterised in that the device includes chip to be measured (1), glass fiber
Tubule (15), Transmission Fibers (9), compression fittings (4), pressure entrance (6), base (10), sealing ring (11), shell (14) and close
Sealing (16)；Wherein：
The chip to be measured (1) is made through diaphragm (17) and substrate sheet (19) bonding, and wherein diaphragm (17) is used as flexible sheet sense
It is stressed, while being used as second reflecting surface of Fabry-Perot-type cavity (18)；The corrosion of substrate sheet (19) centre of surface has microcavity,
Microcavity bottom is used as first reflecting surface of Fabry-Perot-type cavity (18), the corrosion depth decision Fabry-Perot-type cavity of microcavity
(10) initial length；
Connected between the chip to be measured (1) and capillary glass tube (15) by laser welding mode；The capillary glass tube (15)
It is tightly connected between base (10) by fluid sealant (16)；Pass through sealing ring between the base (10) and compression fittings (4)
(11) it is tightly connected, shell (14) provides support by screw thread with compression fittings (4) with base (10) is merged into.
2. a kind of chip bonding strength meter of simplification according to claim 1, it is characterised in that the chip to be measured
(1) bonding pattern include anode linkage, eutectic bonding, thermocompression bonding, stick together bonding, glass solder be bonded and low-temperature bonding.
3. a kind of chip bonding strength meter of simplification as claimed in claim 1 or 2, it is characterised in that the core to be measured
The bottom shape of piece (1) includes circular, rectangle and polygon；The upper surface shape of the capillary glass tube (15) and chip to be measured
(1) bottom shape mutually agrees with；The material of capillary glass tube (15) is Pyrex or fused silica material.
4. a kind of chip bonding strength meter of simplification according to claim 1, it is characterised in that Transmission Fibers (9)
Species include single-mode fiber and multimode fibre.
5. a kind of preparation method of the chip bonding strength meter of simplification according to claim 1, it is characterised in that bag
Include following steps：
(1) diaphragm (17) to be bonded, substrate sheet (19) are cut into required shape；In substrate sheet (19) corrosion depth 10~
100 μm of microcavity, diaphragm (17), substrate sheet (19) are bonded；
(2) capillary glass tube (15) is bonded as one with base (10) using fluid sealant (16), chip supporting structure is made；
(3) chip supporting structure is placed in laser welding apparatus, makes capillary glass tube (15) upper surface and chip to be measured
(1) lower surface is overlapped and is brought into close contact, and is welding as one both using laser；
(4) Transmission Fibers (9) of well cutting are inserted from capillary glass tube (15) bottom, makes Transmission Fibers (9) upper surface with treating
Survey the laminating of chip (1) lower surface；Finely tune Transmission Fibers (9) position and interference signal is observed by spectrometer (24), treat interference letter
Pass through adhesive constant transmissions optical fiber (9) position when number most strong；
(5) after base (10) side wall installs sealing ring (11) additional, in the circular groove for being assemblied in compression fittings (4) rear end；
(6) shell (14) is screwed on, the making of the chip bonding strength meter is completed.
6. a kind of chip bonding ionization meter system of the chip bonding strength meter composition of simplification according to claim 1
System, it is characterised in that the system includes white light source (20), chip bonding strength meter (21), pressure source (23), 3dB
Coupler (22), spectrometer (24) and optical fiber (25), wherein：
The white light source (20) send optically coupling to optical fiber (25), after a three-dB coupler (22), into the core
Piece bond strength measurement device (21) is simultaneously incident to chip to be measured (1)；After substrate sheet (19) and diaphragm (17) reflection, with chamber
The reflected light of long message returns to three-dB coupler (22), afterwards into spectrometer (24), is believed by the spectrum for recording reflected light
Breath can calculate chamber long value now；The pressure that the chip bonding strength meter (21) is arranged on pressure source (23) goes out
On mouth.
7. the measuring method of chip bonding strength measurement system according to claim 6, it is characterised in that including following step
Suddenly：
(1) apply initial pressure to described bond strength measurement device (21) using pressure source (23), and record light now
Spectrum information；
(2) selection pressurization step-length, improves the pressure value that pressure source (23) para-linkage strength meter (21) applies；
(3) pressure value that pressure source (23) applies is reduced to 0, observation spectrometer (24) has displayed whether interference signal：If so, weight
Multiple step (2) disappears until falling spectrometer after pressure (24) interference signal；If nothing, the pressure value applied in previous step is
The maximum pressure value that can be born after chip (1) bonding to be measured, reflects the bond strength of chip, while the spectrum number for passing through record
According to the pressure value applied in previous step can be calculated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710198144.6A CN106959269B (en) | 2017-03-29 | 2017-03-29 | Simplified chip bonding strength measuring device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710198144.6A CN106959269B (en) | 2017-03-29 | 2017-03-29 | Simplified chip bonding strength measuring device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106959269A true CN106959269A (en) | 2017-07-18 |
| CN106959269B CN106959269B (en) | 2020-07-31 |
Family
ID=59471811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710198144.6A Active CN106959269B (en) | 2017-03-29 | 2017-03-29 | Simplified chip bonding strength measuring device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106959269B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108645788A (en) * | 2018-06-27 | 2018-10-12 | 武汉船用机械有限责任公司 | A kind of coating detection device |
| CN109580056A (en) * | 2018-12-26 | 2019-04-05 | 天津大学 | A kind of flush type method amber microcavity hyperpressure fibre optical sensor and preparation method thereof |
| CN110146203A (en) * | 2018-12-11 | 2019-08-20 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of encapsulating structure and packaging method of fibre optic compression sensor resistant to high temperature |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484021A (en) * | 2003-05-15 | 2004-03-24 | 厦门大学 | Low vacunm bonding method of polydimethylsiloxane chip |
| WO2009006938A1 (en) * | 2007-07-09 | 2009-01-15 | Abb Research Ltd | Pressure sensor |
| CN103308146A (en) * | 2013-05-17 | 2013-09-18 | 武汉理工大学 | Signal demodulation system for optical fiber F-P (Fabry-Perot) acoustic emission sensor |
| CN103487200A (en) * | 2013-08-20 | 2014-01-01 | 中国科学院半导体研究所 | Fabry-perot type pressure intensity sensing cavity and optical fiber pressure intensity sensor applying same |
| EP2779127A2 (en) * | 2013-03-14 | 2014-09-17 | Kidde Technologies, Inc. | Pneumatic sensing apparatus for fire or overheat alarm |
| CN205228702U (en) * | 2015-12-17 | 2016-05-11 | 天津求实飞博科技有限公司 | Optic fibre high pressure sensor based on F -P principle of interference |
-
2017
- 2017-03-29 CN CN201710198144.6A patent/CN106959269B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484021A (en) * | 2003-05-15 | 2004-03-24 | 厦门大学 | Low vacunm bonding method of polydimethylsiloxane chip |
| WO2009006938A1 (en) * | 2007-07-09 | 2009-01-15 | Abb Research Ltd | Pressure sensor |
| EP2779127A2 (en) * | 2013-03-14 | 2014-09-17 | Kidde Technologies, Inc. | Pneumatic sensing apparatus for fire or overheat alarm |
| CN103308146A (en) * | 2013-05-17 | 2013-09-18 | 武汉理工大学 | Signal demodulation system for optical fiber F-P (Fabry-Perot) acoustic emission sensor |
| CN103487200A (en) * | 2013-08-20 | 2014-01-01 | 中国科学院半导体研究所 | Fabry-perot type pressure intensity sensing cavity and optical fiber pressure intensity sensor applying same |
| CN205228702U (en) * | 2015-12-17 | 2016-05-11 | 天津求实飞博科技有限公司 | Optic fibre high pressure sensor based on F -P principle of interference |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108645788A (en) * | 2018-06-27 | 2018-10-12 | 武汉船用机械有限责任公司 | A kind of coating detection device |
| CN110146203A (en) * | 2018-12-11 | 2019-08-20 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of encapsulating structure and packaging method of fibre optic compression sensor resistant to high temperature |
| CN109580056A (en) * | 2018-12-26 | 2019-04-05 | 天津大学 | A kind of flush type method amber microcavity hyperpressure fibre optical sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106959269B (en) | 2020-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103557929B (en) | A kind of Fabry-perot optical fiber sound pressure sensor method for making based on graphene film and measuring method, device | |
| EP3163340B1 (en) | Method of fabrication of an optical waveguide sensor and such optical waveguide sensor | |
| JP4134499B2 (en) | Optical device | |
| CN104502016B (en) | A kind of chamber based on MEMS technology adjustable F P pressure sensors long and forming method | |
| US20140208858A1 (en) | High stable fiber fabry-perot pressure sensor with glue-free packing and its fabrication method | |
| CN106959269A (en) | The chip bonding strength meter and method of a kind of simplification | |
| CN102865900B (en) | Fiber Grating Liquid Depth Sensor and preparation method thereof | |
| CN103644987A (en) | Optical fiber F-P (Fabry-Perot) cavity pressure sensor with temperature self compensation | |
| US11262267B2 (en) | Hermeticity testing of an optical assembly | |
| CN107843291A (en) | A kind of fiber optic temperature pressure compound sensor | |
| CN107014691A (en) | A kind of chip bonding strength meter and method | |
| CN208155479U (en) | The fiber optic temperature and pressure sensor of double cavity structure | |
| CN101655353A (en) | Miniature extrinsic Fabry-Perot type optical fiber pressure transducer and manufacturing method thereof | |
| CN104515621A (en) | Fiber optic temperature sensor based on sealed micro cavity gas thermal effect and manufacturing method of fiber optic temperature sensor | |
| CN108572047A (en) | A kind of optical fiber air pressure sensing device based on multiple Fabry-Perot micro chambers | |
| CN107861192A (en) | Cone is drawn to combine the method that chemical attack prepares optical fiber F P sensors based on optical fiber | |
| CN108020248A (en) | The method that large mode field fibre-optical F-P sensor is prepared based on chemical corrosion method | |
| CN106197782B (en) | Miniature extrinsic Fabry-perot optical fiber pressure sensor | |
| CN101303300A (en) | Minitype optical fiber F-P sensor, manufacturing method and liquid tester based on sensor | |
| CN109431481B (en) | Micro optical fiber pressure sensor, manufacturing method thereof and pressure sensing system | |
| CN109029519A (en) | A kind of preparation method of the fiber F-P cavity sensor of fiber optic tip increasing plating UV glue film | |
| CN108731840A (en) | Fiber optic temperature and pressure sensor of double cavity structure and preparation method thereof | |
| CN114137273B (en) | Temperature-sensitive current eliminating sensing device of FBG cascade optical fiber composite structure | |
| US11340131B2 (en) | Multi-hole probe pressure sensors | |
| CN109029797B (en) | High-sensitivity optical fiber probe type diaphragm structure for measuring pressure load |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |