CN204681318U - A kind of voltage transitions is the mutual conductance amplifying circuit of electric current - Google Patents
A kind of voltage transitions is the mutual conductance amplifying circuit of electric current Download PDFInfo
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- CN204681318U CN204681318U CN201520301261.7U CN201520301261U CN204681318U CN 204681318 U CN204681318 U CN 204681318U CN 201520301261 U CN201520301261 U CN 201520301261U CN 204681318 U CN204681318 U CN 204681318U
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Abstract
This application discloses the mutual conductance amplifying circuit that a kind of voltage transitions is electric current, particularly relate to one and have employed multilayer paired N type of transistor and P type of transistor comes alternative single N type of transistor (nmos pass transistor) and P type of transistor (PMOS transistor).Paired N type of transistor after substituting has same mutual conductance with P type of transistor, but the electric current consumed and power consumption decrease, and belong to technical field of integrated circuits.The utility model has low in energy consumption, and the mutual conductance that can be widely used in radio frequency analog circuit produces in circuit.
Description
Technical field
The utility model relates to integrated circuit (IC) design and signal transacting field, particularly relates to the mutual conductance amplifying circuit that a kind of voltage transitions is electric current.
Background technology
In frequency microwave communication, for the radiofrequency signal of input, need to carry out radio frequency amplification by low noise amplifier, then after being mixed to low frequency under local oscillation signal, amplify through low frequency amplifier again, device carries out frequency-selecting after filtering, then gives Base-Band Processing after analog to digital converter (ADC).Therefore, low noise amplifier is the Key Circuit of radio-frequency receiving system.The power consumption of low noise amplifier and performance have impact on power consumption and the performance of radio-frequency receiving system greatly.
In existing integrated circuit (IC) design, the electric current requiring chip to consume and power consumption are more low better, for mobile radio system and equipment especially true, such as mobile phone.The service time of equipment can be improved like this.It is more few better that device simultaneously outside chip slapper needs, and both greatly reduced the area that system takies, and also reduced cost.
In current transceiver, amplifier circuit in low noise (is divided into common source low noise amplifier and is total to grid low noise amplifier two kinds) usually as illustrated in figs. ia and ib, the voltage signal of input by transistor M1, is generally N type of transistor (NMOS) or P type of transistor (PMOS) is converted into electric current.
Because current multiplexing can ensure on the basis of same noiseproof feature, reduce electric current and the power consumption of circuit, the amplifier circuit in low noise of current multiplexing is widely used at present in practice.An alternative independent NMOS or PMOS transistor is come by using a pair NMOS and PMOS transistor.The mutual conductance that such a pair NMOS and PMOS transistor can provide single NMOS or PMOS transistor to provide, but only need approximately half electric current, principle is as shown in Fig. 2 a and Fig. 2 b and Fig. 3 a and Fig. 3 b.Fig. 2 b illustrates replacement for single NMOS tube, and single tube MN is substituted by a pair MN and MP.Fig. 3 b illustrates replacement for single PMOS, and single tube MP is substituted by a pair MN and MP.
Utility model content
The purpose of this utility model is to provide a kind of voltage transitions to be the mutual conductance amplifying circuit of electric current, to overcome deficiency of the prior art.
For achieving the above object, the utility model provides following technical scheme:
The embodiment of the present application discloses the mutual conductance amplifying circuit that a kind of voltage transitions is electric current, comprises the multiplexing elementary cell of multiple cross-coupled current of series connection, and the multiplexing elementary cell of described each cross-coupled current comprises:
One difference channel, comprises the first transistor and transistor seconds;
One difference cross-coupled circuit, comprises third transistor and the 4th transistor, and in pairs, described in described 4th transistor AND gate, transistor seconds current multiplexing is paired for described third transistor and described the first transistor current multiplexing.
Preferably, be in the mutual conductance amplifying circuit of electric current in above-mentioned voltage transitions, be connected directly between together or receive respectively power supply or ground between described the first transistor and the source of third transistor, or linked together by electric capacity; Be be connected directly between together between described the first transistor and the drain terminal of third transistor, or linked together by electric capacity; Be be connected directly between together or receive respectively power supply or ground between the source of described transistor seconds and the 4th transistor, or linked together by electric capacity; Be be connected directly between together between the drain terminal of described transistor seconds and the 4th transistor, or linked together by electric capacity.
Preferably, be in the mutual conductance amplifying circuit of electric current in above-mentioned voltage transitions, described the first transistor and transistor seconds are P-type crystal pipe, described third transistor and the 4th transistor are N-type transistor, be connected to 2 electric capacity between the source electrode of described the first transistor and transistor seconds and grid, between the source electrode of described third transistor and the 4th transistor and grid, be connected to 2 electric capacity.
Preferably, be in the mutual conductance amplifying circuit of electric current in above-mentioned voltage transitions, described voltage transitions is that the mutual conductance amplifying circuit of electric current is common source amplifying circuit or is total to grid amplifying circuit.
Disclosed herein as well is the noise reduction method that a kind of voltage transitions is the mutual conductance amplifying circuit of electric current, at least one transistor in amplifying circuit is carried out n iteration, n >=2, iteration refers to and a transistor is replaced to the paired nmos pass transistor of current multiplexing and PMOS each time.
Preferably, be in the noise reduction method of mutual conductance amplifying circuit of electric current in above-mentioned voltage transitions, described amplifying circuit comprises 2 multiplexing elementary cells of cross-coupled current of series connection, the multiplexing elementary cell of described each cross-coupled current comprises 2 paired nmos pass transistors and PMOS transistor, and described 2 paired nmos pass transistors are coupled by capacitive cross with between PMOS transistor.
Compared with prior art, the utility model has the advantage of: compared with prior art, owing to have employed current multiplexing technology and capacitive cross coupling technique, the utility model, realizing same voltage on the mutual conductance basis of electric current, reduces electric current and the power consumption of circuit.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 a is depicted as the circuit diagram of common source low noise amplifier in prior art;
Fig. 1 b is depicted as the circuit diagram of grid low noise amplifier altogether in prior art;
Fig. 2 a is depicted as the schematic diagram of single NMOS tube;
Fig. 2 b is depicted as two paired transistors;
Fig. 3 a is depicted as the schematic diagram of single PMOS;
Fig. 3 b is depicted as two paired transistors;
Fig. 4 a is depicted as the structure chart of single transistor in common source circuit;
Transistor paired shown in Fig. 4 b;
Fig. 4 c is depicted as the paired transistor of iteration;
Figure 5 shows that the circuit structure diagram of the multiplexing elementary cell of cross-coupled current in the utility model embodiment;
Figure 6 shows that the current multiplexing capacitive cross coupling circuit figure of N iteration in the utility model embodiment;
Figure 7 shows that in the utility model most preferred embodiment, voltage transitions is the schematic diagram of the mutual conductance amplifying circuit of electric current.
Embodiment
The principle of the present embodiment is the power consumption in order to further step-down amplifier, proposes multi-stage iteration and becomes pair nmos transistor and PMOS transistor to carry out the new circuit structure of alternative single nmos pass transistor or PMOS transistor.
The circuit thinking of the present embodiment is exactly the first step, and single nmos pass transistor or PMOS transistor paired nmos pass transistor and PMOS transistor are substituted, shown in ginseng Fig. 4 a and Fig. 4 b.
Second step, regards single transistor as the nmos pass transistor of paired the inside or PMOS transistor.Substitute by paired nmos pass transistor and PMOS transistor, shown in ginseng Fig. 4 c.
3rd step, can regard single transistor as each nmos pass transistor in the circuit after an iteration or PMOS transistor further, replace by paired nmos pass transistor and PMOS transistor.
4th step, repeats the 3rd step, until other restrictions of circuit stop, and such as supply voltage restriction or linearity restriction.
Below in conjunction with the accompanying drawing in the utility model embodiment, be described in detail the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of the utility model protection.
The voltage transitions that the utility model embodiment adopts iteration to become pair nmos transistor and PMOS transistor to substitute single nmos pass transistor or single PMOS transistor is the trsanscondutance amplifier of electric current, comprise common-source amplifier, cathode-input amplifier, low noise common-source amplifier, low noise cathode-input amplifier etc., multiple iteration is mainly become pair nmos transistor and PMOS transistor iteration by it, the load of rear stage.
The one-tenth pair nmos transistor of these iteration and the annexation of PMOS transistor are under exchange status, and the grid end of all crystals pipe is shorted together, and source is shorted together, and drain terminal is also shorted together.Between the grid end of transistor or be connected directly between together, or linked together by electric capacity.Between the source of transistor or be connected directly between together, or receive power supply or ground respectively, or linked together by electric capacity.Between the drain terminal of transistor or be connected directly between together, or linked together by electric capacity.Voltage signal is right through the input of amplifier, and by multiple one-tenth pair nmos transistor and PMOS transistor to being converted to electric current, then electric current is superimposed at drain terminal and sends into next stage load, shown in ginseng Fig. 4 c.
Adopt above-mentioned circuit, be converted to difference channel, and utilize capacitive cross to be coupled paired nmos pass transistor and PMOS transistor the source of corresponding transistor to be connected with grid end, to form the multiplexing basic element circuit CRCC of capacitive cross couple current.In Figure 5, with the circuit in Fig. 3 b and 4b, composition differential-input differential output circuit.Then utilize electric capacity CC1, CC12, CC2 and CC22 that the source of nmos pass transistor MN1 and MN2 and grid are coupled together, utilize electric capacity CC3, CC32, CC4 and CC42 that the source of PMOS transistor MP1 and MP2 and grid are coupled together.
Using circuit in Fig. 5 as elementary cell, then adopt 2 elementary cells, connect together up and down, and connect, power consumption needed for circuit can be reduced further like this.As shown in Figure 6.Add inductance in the source of transistor MN1, MN12, MP1 and MP12, also can add the current source of nmos pass transistor or PMOS transistor, carry out the low noise amplifier of the twice multiplexing capacitive cross coupling of the electric current shown in pie graph 7.
N number of elementary cell, connect together up and down, connect, N iteration current multiplexing capacitive cross coupling circuit figure shown in pie graph 6
Other voltages that circuit in the present embodiment also can be applicable to beyond low noise amplifier turn current amplifier unit.
In a preferred embodiment, circuit structure as shown in Figure 7.
In overall structure, circuit adopts grid low noise amplifier structure altogether, compared with traditional structure, in the present embodiment, circuit have employed two-stage current multiplexing iteration structure, for the same mutual conductance needed, electric current can reduce 4 times, be coupled by capacitive cross between input both positive and negative polarity by employing, one times, electric current can be reduced further, like this, the overall quiescent current needed for circuit, compared with traditional circuit, can reduce by 8 times.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of the application.
Claims (4)
1. voltage transitions is a mutual conductance amplifying circuit for electric current, it is characterized in that, comprises the multiplexing elementary cell of multiple cross-coupled current of series connection, and the multiplexing elementary cell of described each cross-coupled current comprises:
One difference channel, comprises the first transistor and transistor seconds;
One difference cross-coupled circuit, comprises third transistor and the 4th transistor, and in pairs, described in described 4th transistor AND gate, transistor seconds current multiplexing is paired for described third transistor and described the first transistor current multiplexing.
2. voltage transitions according to claim 1 is the mutual conductance amplifying circuit of electric current, it is characterized in that: be connected directly between together or receive respectively power supply or ground between described the first transistor and the source of third transistor, or linked together by electric capacity; Be be connected directly between together between described the first transistor and the drain terminal of third transistor, or linked together by electric capacity; Be be connected directly between together or receive respectively power supply or ground between the source of described transistor seconds and the 4th transistor, or linked together by electric capacity; Be be connected directly between together between the drain terminal of described transistor seconds and the 4th transistor, or linked together by electric capacity.
3. voltage transitions according to claim 1 is the mutual conductance amplifying circuit of electric current, it is characterized in that: described the first transistor and transistor seconds are P-type crystal pipe, described third transistor and the 4th transistor are N-type transistor, be connected to 2 electric capacity between the source electrode of described the first transistor and transistor seconds and grid, between the source electrode of described third transistor and the 4th transistor and grid, be connected to 2 electric capacity.
4. voltage transitions according to claim 1 is the mutual conductance amplifying circuit of electric current, it is characterized in that: described voltage transitions is that the mutual conductance amplifying circuit of electric current is common source amplifying circuit or is total to grid amplifying circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520301261.7U CN204681318U (en) | 2015-05-12 | 2015-05-12 | A kind of voltage transitions is the mutual conductance amplifying circuit of electric current |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520301261.7U CN204681318U (en) | 2015-05-12 | 2015-05-12 | A kind of voltage transitions is the mutual conductance amplifying circuit of electric current |
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| CN201520301261.7U Expired - Fee Related CN204681318U (en) | 2015-05-12 | 2015-05-12 | A kind of voltage transitions is the mutual conductance amplifying circuit of electric current |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836532A (en) * | 2015-05-12 | 2015-08-12 | 苏州沿芯微电子科技有限公司 | Transconductance amplifying circuit capable of converting voltage to current |
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2015
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836532A (en) * | 2015-05-12 | 2015-08-12 | 苏州沿芯微电子科技有限公司 | Transconductance amplifying circuit capable of converting voltage to current |
| CN104836532B (en) * | 2015-05-12 | 2018-07-31 | 苏州沿芯微电子科技有限公司 | A kind of voltage is converted to the mutual conductance amplifying circuit of electric current |
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Effective date of registration: 20180211 Address after: 200120 Pudong New Area Nanhui new town, Nanhui new town round two road, No. 888, 2 1 District 3069 Shanghai along core Microelectronic Technology Co., Ltd. Patentee after: SHANGHAI ESIIC TECHNOLOGY CO.,LTD. Address before: 215600 Jiangsu Suzhou Jiangsu province Zhangjiagang City Guotai North Road No. 1 high-tech enterprise service center B 307 Suzhou along core Microelectronic Technology Co., Ltd. Patentee before: SUZHOU ESIIC TECHNOLOGY CO.,LTD. |
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