CN102324896B - Low-noise broadband amplifier with linearity compensation - Google Patents
Low-noise broadband amplifier with linearity compensation Download PDFInfo
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- CN102324896B CN102324896B CN201110192379.7A CN201110192379A CN102324896B CN 102324896 B CN102324896 B CN 102324896B CN 201110192379 A CN201110192379 A CN 201110192379A CN 102324896 B CN102324896 B CN 102324896B
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Abstract
The invention belongs to the design field of radio frequency integrated circuits, which in particular discloses a low-noise broadband amplifier with linearity compensation. The circuit comprises an active feedback unit, a current multiplexing transconductance unit, a direct-current feedback unit and a low-power supply voltage offset unit with the linearity compensation, wherein the direct-current feedback unit is used for stabilizing working points; the active feedback unit realizes broadband input impendence matching; the current multiplexing transconductance unit uses one transistor complementary with a main transconductance unit to serve as the other transconductance unit to improve gain under the condition of the same power consumption; a direct-current feedback loop is used for stabilizing the working points of the circuit; and the low-power supply voltage offset unit with the linearity compensation has the function of linearity compensation under the condition of providing offset to the circuit. According to the low-noise broadband amplifier, the low-noise amplifier with high linearity can be obtained by costing lower power consumption by the CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology.
Description
Technical field
The invention belongs to technical field of radio frequency integrated circuits, be specifically related to a kind of low noise amplifier.
Background technology
The receiver front end of communication system generally includes low noise amplifier (LNA), frequency mixer (Mixer), variable gain amplifier (VGA) and some filters.As the first order of active circuit in receiver, LNA need to amplify input signal, reduces the noise of whole system, complete and the impedance matching of input terminal simultaneously, its performance usually give whole receiver performance setting the limit.
It is only the signals of tens KHz to several megahertzes that traditional narrow-band receiver is processed bandwidth, is with outer mirror image, spuious and noise can the good filtering of filtered device.But the development of current multi-mode communication has but proposed different system requirements.Need to process in the system of multimode signal, receiver must all have disposal ability to the signal that works in different frequency range, different bandwidth, and with respect to single mode signal processing, its performance requirement is almost constant.A lot of systems are used multiple submodules for each self mode, and utilize and between submodule, switch to realize multimode, the great like this area that increases chip, thus reduce output, increased cost.A kind of solution of high integration is exactly the framework that uses broadband receiver.This first just requires LNA must have the characteristic of broadband signal amplification, wideband low noise and wideband impedance match.In addition, the development of high-speed data communication has proposed more and more higher requirement to the signal bandwidth of transmission data.According to Shannon-Hart example theorem, channel capacity is directly proportional to bandwidth.Use at frequency spectrum today that density is increasing, channel disturbance is serious, the method that improves transmission rate by improving the bandwidth of signal is extensively received and is put into practice, as spread spectrum communication, and ultra broadband (UWB) communication etc.The receiver front end with the disposal ability of broadband signal is the basis that guarantees that these technology are achieved.Reach in the LNA of 100,000,000 even several GHzs a bandwidth, need to the consideration different from arrowband LNA except above-mentioned gain, noise and designing impedance matching, the linearity also becomes the key factor that affects broadband LNA performance.When with roomy to making secondary, three times, when even more the harmonic wave of high order is all within signal bandwidth, filter also becomes very limited to the improvement effect that improves the linearity.Now, need LNA self to there is the higher linearity, or use the method for extra linearity compensation.
Shown in Fig. 1 is the example of a traditional low noise amplifier based on active feedback.In this example, a pressure drop that is greater than the gate source voltage of transistor M2 has been forced in active feedback unit 110 between the input and output node of amplifier, makes this circuit be difficult to be applied to low supply voltage occasion.And the active feedback that this circuit adopts belongs to nonlinear feedback, although the use of feedback resistance 102 can this circuit of Partial Linear, the further raising of the linearity also need to be by other method.
Summary of the invention
The object of the present invention is to provide a kind of self have linearity compensation function, be applicable to the low noise amplifier of broadband application, and keep gain and the noise characteristic of traditional low noise amplifier.
Wideband low noise amplifier provided by the invention, comprising:
(1) main transconductance cell, converts input voltage to electric current;
(2) current multiplexing type transconductance cell, multiplexing main span is led the electric current of branch road, and Voltage-current conversion gain is provided;
(3) active feedback unit, for feeding back to described amplifier in, provides wideband impedance match function;
(4) DC feedback unit, for stabilizing amplifier working point;
(5) the low supply voltage bias unit with linearity compensation, improves the linearity of described amplifier.
In wideband low noise amplifier of the present invention, further comprise:
First end is connected to the capacitance of amplifier in;
First end is connected to the first inductor of input capacitance the second end;
The resistor in parallel with current multiplexing type transconductance cell;
Be connected in the second inductor between power supply and current multiplexing type transconductance cell.
In the present invention, described main transconductance cell, comprises that grid is connected to the first transistor of first inductor the second end, with the transistor seconds that source electrode is connected with the first transistor drain electrode, grid is connected bias voltage source.
In the present invention, described active feedback unit, comprise that the 4th transistor and one end are connected to the resistor of its source electrode, this feedback adopts source follower structure, the 4th transistorized grid is connected with the output of amplifier, and its source electrode is connected with the grid of the first transistor of main transconductance cell by a source-electrode degradation resistance.
In the present invention, described current multiplexing type transconductance cell, the 3rd transistor of transistor types complementation in use and main transconductance cell, its grid is connected to the grid of the first transistor, and source electrode is connected to the first end of the second inductor.
In the present invention, described DC feedback unit, comprises at least one low pass filter and a comparator.
In the present invention, the described low supply voltage bias unit with linearity compensation, in providing proper operation point for low noise amplifier, comprises that at least one can injecting voltage harmonic wave or the node of current harmonics.
In the present invention, the described low supply voltage bias unit with linearity compensation, is further included as its voltage source that bias voltage is provided and the harmonic wave injection unit that produces harmonic wave.
Be connected to the first inductor between input capacitance and main transconductance cell and be connected to power supply and current multiplexing type transconductance cell between the second inductor, they have participated in the optimization of noise-frequency response characteristic; The resistor in parallel with the mutual conductance of current multiplexing type, for the mutual conductance of current multiplexing type arranges rational working point, and the while is as the load of main transconductance cell.
The invention provides a kind of wideband impedance match and noise optimization method, comprise: use active feedback technology to realize wideband impedance match, recycling realizes arrowband coupling with the transconductance cell of source-electrode degradation inductance, thereby the two combination is completed to the optimization of noise-frequency response characteristic.
Wherein, arrowband mates and comprises the first inductor, the second inductor and be connected to the electric capacity between the 3rd transistorized grid and source electrode, and this electric capacity can be capacitor or parasitic capacitance.
The present invention also provides a kind of linearity compensation method that uses harmonic wave to inject, and comprising: use biasing circuit and the corresponding humorous wave generation circuit with harmonic wave injection node.
Humorous wave generation circuit wherein comprises two kinds of methods of the required harmonic wave of output signal feedback generation of utilizing the input signal of low noise amplifier to produce required harmonic wave and utilizing low noise amplifier.
The invention has the advantages that and kept arrowband LNA low noise, advantage that impedance matching property is good, take minimum extra power consumption as cost, obtain a LNA who is suitable for broadband application, and provided the method for its corresponding noise optimization and linearity compensation, improve the integrated level of communication system receiver front end.
Accompanying drawing explanation
Fig. 1 is depicted as traditional active feedback LNA circuit diagram.
Fig. 2 is broadband according to an embodiment of the invention LNA circuit diagram.
Fig. 3 is according to a kind of embodiment schematic diagram that adopts input signal to produce the method for harmonic of the present invention.
Fig. 4 is according to the embodiment schematic diagram of a kind of method that adopts output signal feedback generation harmonic of the present invention.
Embodiment
Now with reference to the more concrete description the present invention of accompanying drawing.In order to contribute to understand the present invention, will relate in the following description very multicircuit details, but the present invention can realize according to multiple different form, is not limited to details described herein and accompanying drawing.
Be illustrated in figure 2 according to the schematic diagram of an example of the present invention wideband low noise amplifier 200.Low noise amplifier 200 comprises main transconductance cell 210, current multiplexing type transconductance cell 220, active feedback unit 230, DC feedback unit 240, low supply voltage bias unit 250, harmonic wave injection unit 260 and input block capacitor C with linearity compensation
0, the first inductor L
0, the second inductor L
1with resistor R
l.Wherein main transconductance cell 210 comprises nmos pass transistor M1 and the M2 that cascade connects, and current multiplexing type transconductance cell 220 comprises PMOS transistor M3, and active feedback unit 230 comprises transistor M4 and resistor R
f, DC feedback unit 240 comprises the reference voltage source V of low pass filter 204, comparator 205 and comparator
ref, comprise transistor M5 and M6, feedback resistance R with the low supply voltage bias unit 250 of linearity compensation
f, and block capacitor C
1.
Input signal (V
in) through block capacitor C
0with inductor L
0the grid (nodes X) that is added to afterwards transistor M1 and M3 amplifies, the output signal (V after being exaggerated
out) pass through again transistor M4 and resistor R
ffeed back to nodes X.This electric current-current feedback has reduced the input resistance that X is ordered, and can carry out impedance matching with signal source internal resistance.The input resistance R of nodes X
xcan be expressed as:
(1)
But for the consideration of the aspect such as noise and gain, the size of transistor M1 and M3 is conventionally all larger, this makes nodes X have very large parasitic capacitance over the ground, and in the time of high frequency, impedance diminishes.Inductor L
0the reduction of input impedance while just in time having compensated this high frequency, has expanded the bandwidth of impedance matching.Except the wideband impedance match that active feedback is introduced, L
0-M3-L
1the utilization that has formed normal use in traditional narrow LNA produces the matching network of resonance with the transconductance cell of source-electrode degradation inductance, the contribution for impedance matching in the LNA of broadband of this matching network is little, but its existence can change the noise transfer function of broadband LNA, for the frequency response characteristic of optimizing noise factor provides the more degree of freedom.About the noise factor of optimizing arrowband LNA, D. Shadffer and T. Lee are at JSSC 1997, in " A 1.5-V; 1.5-GHz CMOS Low Noise Amplifier " in 745-759 page, provided detailed elaboration, can use here similar method obtain its on the impact of broadband LNA noise.
Except noise optimization function is provided, inductor L
1as the load of cascode stage M1-M2, provide bandwidth expansion function simultaneously, now, R
lalso as M1-M2, load provides the function that current conversion is become to voltage.R
lanother one effect be the flow through electric current of M3 of splitter section, make M3 have rational mutual conductance, guarantee that working point is correct.
Active feedback scheme shown in Fig. 1 is not suitable for the application of low supply voltage, in Fig. 2, adopted the bias unit 250 that is applicable to low supply voltage occasion, the method use from nodes X and Y respectively the mode of Injection Current reduced the voltage margin of active feedback circuitry consumes.In order to stablize the voltage of X node, make circuit there is suitable working point, current source M6 uses automatic biasing mode, utilizes DC feedback unit 240 that its grid voltage is provided.DC feedback unit 240 obtains the quiescent voltage value of output by amplifier output signal is carried out to filtering, make it and reference level (V
ref) relatively, by the output control M6 grid level of comparator, complete FEEDBACK CONTROL.In addition, the grid of M6 is also connected to a harmonic wave injection unit by capacitance, and this harmonic wave injection unit plays the effect of linearity compensation by injecting the mode of a harmonic wave.Carry out linearity compensation about using harmonic wave to inject, S. Lou and H. Luong are at JSSC 2008, " A Linearization Technique for RF Receiver Front-End Using Second-Order-Intermodulation Injection " in 2404-2412 page had comparatively detailed elaboration, and used herein is identical principle.
In the present invention, harmonic wave injects can have two kinds of modes to carry out, and the first is the input signal that directly uses LNA, also produces required harmonic signal, as shown in Figure 3 in producing input.For the consideration of succinct and readability, only draw here to harmonic wave and produced and inject relevant circuit part, other parts physical circuit is same as shown in Figure 2.In Fig. 3, signal source 310 is unit that input signal is provided to LNA, can be the equipment such as tester or antenna.Signal source is except being directly added to signal input capacitance C
0outside upper, also make signal pass through a harmonious wave generation circuit 330 of filter 320, then pass through capacitance C
1be added to the grid of M6, complete harmonic wave and inject.The method of the second generation harmonic wave as shown in Figure 4.Here output signal (the V of low noise amplifier,
out) after filtering after the harmonious wave generation circuit 430 of device 420, by capacitance C
1feed back to the grid of M6, complete the injection of harmonic wave.These two kinds of methods are for the requirement difference of humorous wave generation circuit, but have identical effect for the parameter such as third order intermodulation point that improves circuit.
Although described the present invention in conjunction with example of the present invention, those skilled in the art will recognize that the present invention is not limited to described example, can modify and change in the spirit and scope that do not depart from claims.Therefore, this specification should be regarded as indicative and nonrestrictive.
Claims (2)
1. a wideband low noise amplifier, is characterized in that comprising:
(1) main transconductance cell, converts input voltage to electric current;
(2) current multiplexing type transconductance cell, multiplexing main span is led the electric current of branch road, and Voltage-current conversion gain is provided;
(3) active feedback unit, for feeding back to described amplifier in, provides wideband impedance match function;
(4) DC feedback unit, for stabilizing amplifier working point;
(5) the low supply voltage bias unit with linearity compensation, improves the linearity of described amplifier;
Also comprise:
Capacitance, the first end of this capacitance is connected to amplifier in;
The first inductor, the first end of this first inductor is connected to input capacitance the second end;
The resistor in parallel with current multiplexing type transconductance cell;
Be connected in the second inductor between power supply and current multiplexing type transconductance cell;
Wherein, described main transconductance cell, comprises that grid is connected to the first transistor of first inductor the second end, with the transistor seconds that source electrode is connected with the first transistor drain electrode, grid is connected bias voltage source;
Described active feedback unit, comprise that the 4th transistor and one end are connected to the resistor of its source electrode, this feedback adopts source follower structure, the 4th transistorized grid is connected with the output of amplifier, and its source electrode is connected with the grid of the first transistor of main transconductance cell by a source-electrode degradation resistance;
Described current multiplexing type transconductance cell, the 3rd transistor of transistor types complementation in use and main transconductance cell, its grid is connected to the grid of the first transistor, and source electrode is connected to the first end of the second inductor;
Described DC feedback unit, comprises at least one low pass filter and a comparator;
The described low supply voltage bias unit with linearity compensation, in providing proper operation point for low noise amplifier, comprises that at least one can injecting voltage harmonic wave or the node of current harmonics.
2. wideband low noise amplifier as claimed in claim 1, is characterized in that the described low supply voltage bias unit with linearity compensation, is further included as the harmonic wave injection unit of its voltage source that bias voltage is provided and generation harmonic wave.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110192379.7A CN102324896B (en) | 2011-07-11 | 2011-07-11 | Low-noise broadband amplifier with linearity compensation |
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|---|---|---|---|
| CN201110192379.7A CN102324896B (en) | 2011-07-11 | 2011-07-11 | Low-noise broadband amplifier with linearity compensation |
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| CN102324896A CN102324896A (en) | 2012-01-18 |
| CN102324896B true CN102324896B (en) | 2014-07-09 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2869465B1 (en) * | 2013-11-01 | 2016-05-25 | Nxp B.V. | RF amplifier |
| CN105305981B (en) * | 2015-11-30 | 2017-12-01 | 电子科技大学 | One kind linearisation wideband low noise amplifier |
| CN106788324B (en) * | 2016-12-28 | 2020-05-15 | 上海集成电路研发中心有限公司 | Loop feedback active resistor |
| CN109743024A (en) * | 2018-10-31 | 2019-05-10 | 西安电子科技大学 | A kind of integrated circuit of current multiplexing type gm-boost low-noise amplifier |
| CN114553158A (en) * | 2021-12-28 | 2022-05-27 | 广州润芯信息技术有限公司 | Low-noise amplifier and down-conversion system of receiver |
| CN114844473B (en) * | 2022-04-11 | 2023-06-02 | 电子科技大学 | Double-control-bit type variable gain amplifier adopting compensation capacitance technology |
| CN114793093B (en) * | 2022-04-28 | 2024-04-12 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
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| CN1524340A (en) * | 2001-05-25 | 2004-08-25 | �����ɷ� | High-bandwidth low-voltage gain cell and voltage follower having an enhanced transconductance |
| US20050001687A1 (en) * | 2001-11-07 | 2005-01-06 | Versteegen Marius Gerardus Jacobus | Power amplifier module with distortion compensation |
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2011
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1524340A (en) * | 2001-05-25 | 2004-08-25 | �����ɷ� | High-bandwidth low-voltage gain cell and voltage follower having an enhanced transconductance |
| US20050001687A1 (en) * | 2001-11-07 | 2005-01-06 | Versteegen Marius Gerardus Jacobus | Power amplifier module with distortion compensation |
Non-Patent Citations (1)
| Title |
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| 谢江滨，秦希，方飞，林楠，洪志良.基于0. 18 Lm SiGe BiCMOS 工艺的带宽为.《复旦学报》.复旦大学,2010,第49卷(第3期), * |
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