CN104836532B - A kind of voltage is converted to the mutual conductance amplifying circuit of electric current - Google Patents
A kind of voltage is converted to the mutual conductance amplifying circuit of electric current Download PDFInfo
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- CN104836532B CN104836532B CN201510237364.6A CN201510237364A CN104836532B CN 104836532 B CN104836532 B CN 104836532B CN 201510237364 A CN201510237364 A CN 201510237364A CN 104836532 B CN104836532 B CN 104836532B
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Abstract
The mutual conductance amplifying circuit of electric current is converted to this application discloses a kind of voltage more particularly to one kind using the pairs of N type of transistor of multilayer with P type of transistor to substitute single N type of transistor (NMOS transistor) and P type of transistor (PMOS transistor).Pairs of N type of transistor after replacement has same mutual conductance with P type of transistor, but the electric current and power consumption that consume reduce, and belong to technical field of integrated circuits.The present invention have it is low in energy consumption, can be widely applied in the mutual conductance generation circuit of radio frequency analog circuit.
Description
Technical field
The present invention relates to the mutual conductances that IC design and field of signal processing more particularly to a kind of voltage are converted to electric current
Amplifying circuit.
Background technology
In frequency microwave communication, for the radiofrequency signal of input, need to carry out radio frequency amplification by low-noise amplifier,
Then it after being mixed to low frequency under local oscillation signal, is amplified using low-frequency amplifier, filtered device carries out frequency-selecting, then passes through
Base-Band Processing is given after analog-digital converter (ADC).Therefore, low-noise amplifier is the Key Circuit of radio-frequency receiving system.Low noise
The power consumption and performance strong influence of the acoustic amplifier power consumption and performance of radio-frequency receiving system.
In existing IC design, it is desirable that the lower the electric current and power consumption of chip consumption the better, for mobile radio system
System is especially true with equipment, such as mobile phone.The usage time of equipment can be improved in this way.The device needs outside chip slapper are got over simultaneously
It is few better, the area of system occupancy had both been greatly reduced, cost is also reduced.
In current transceiver, amplifier circuit in low noise (is divided into common source low noise to put usually as illustrated in figs. 1A and ib
Two kinds of big device and common-gate low noise amplifier), the voltage signal of input is by transistor M1, usually N type of transistor
(NMOS) or P type of transistor (PMOS) is converted into electric current.
Since current multiplexing can ensure to reduce the electric current and power consumption of circuit on the basis of same noiseproof feature,
The amplifier circuit in low noise of current multiplexing is widely used in practice at present.By using a pair of NMOS and PMOS crystal
Pipe substitutes an individual NMOS or PMOS transistor.A pair of NMOS and PMOS transistor can provide individually in this way
The mutual conductance that NMOS or PMOS transistor provide, but approximately half electric current is only needed, principle such as Fig. 2 a and Fig. 2 b and Fig. 3 a
Shown in Fig. 3 b.Fig. 2 b illustrate that replacement, single tube MN are substituted by a pair of of MN and MP by taking single NMOS tube as an example.Fig. 3 b are with single
Illustrate that replacement, single tube MP are substituted by a pair of of MN and MP for PMOS tube.
Invention content
The purpose of the present invention is to provide the mutual conductance amplifying circuits that a kind of voltage is converted to electric current, to overcome in the prior art
Deficiency.
To achieve the above object, the present invention provides the following technical solutions：
The embodiment of the present application discloses the mutual conductance amplifying circuit that a kind of voltage is converted to electric current, including concatenated multiple intersections
Couple current is multiplexed basic unit, and each cross-coupled current multiplexing basic unit includes：
One difference channel, including the first transistor and second transistor；
One difference cross-coupled circuit, including third transistor and the 4th transistor, the third transistor and described the
One transistor current is multiplexed into pair, and the 4th transistor and the second transistor current multiplexing are pairs of.
Preferably, in the mutual conductance amplifying circuit that above-mentioned voltage is converted to electric current, the first transistor and third are brilliant
It is directly connected between the source of body pipe together or is to be coupled with power supply or ground, or exist by capacitance connection
Together；It is directly connected to together between the first transistor and the drain terminal of third transistor, or passes through capacitance connection
Together；It is directly connected to together between the second transistor and the source of the 4th transistor or is to be coupled with electricity
Source or ground, or together by capacitance connection；It is direct between the second transistor and the drain terminal of the 4th transistor
It links together, or together by capacitance connection.
Preferably, in the mutual conductance amplifying circuit that above-mentioned voltage is converted to electric current, the first transistor and the second crystalline substance
Body pipe is P-type transistor, and the third transistor and the 4th transistor are N-type transistor, the first transistor and the second crystalline substance
2 capacitances, the source electrode and grid of the third transistor and the 4th transistor are connected separately between the source electrode and grid of body pipe
Between be connected separately with 2 capacitances.
Preferably, in the mutual conductance amplifying circuit that above-mentioned voltage is converted to electric current, the voltage be converted to electric current across
It is common source amplifying circuit or total grid amplifying circuit to lead amplifying circuit.
Disclosed herein as well is the noise reduction methods that a kind of voltage is converted to the mutual conductance amplifying circuit of electric current, by amplification electricity
At least one of road transistor carries out n times iteration, and n >=2, iteration refers to that a transistor is substituted for current multiplexing each time
Pairs of NMOS transistor and PMOS tube.
Preferably, in the noise reduction method of mutual conductance amplifying circuit that above-mentioned voltage is converted to electric current, the amplification
Circuit includes concatenated 2 cross-coupled currents multiplexing basic unit, and each cross-coupled current is multiplexed basic unit packet
2 pairs of NMOS transistors and PMOS transistor are included, are passed through between described 2 pairs of NMOS transistors and PMOS transistor
Capacitive cross couples.
Compared with the prior art, the advantages of the present invention are as follows：Compared with prior art, as a result of current multiplexing technology
And capacitive cross coupling technique, the present invention reduce the electricity of circuit on the basis of realizing mutual conductance of the same voltage to electric current
Stream and power consumption.
Description of the drawings
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments described in application, for those of ordinary skill in the art, without creative efforts,
Other drawings may also be obtained based on these drawings.
Fig. 1 a show the circuit diagram of common source low-noise amplifier in the prior art；
Fig. 1 b show the circuit diagram of common-gate low noise amplifier in the prior art；
Fig. 2 a show the schematic diagram of single NMOS tube；
Fig. 2 b show two pairs of transistors；
Fig. 3 a show the schematic diagram of single PMOS tube；
Fig. 3 b show two pairs of transistors；
Fig. 4 a show the structure chart of single transistor in common source circuit；
Pairs of transistor shown in Fig. 4 b；
Fig. 4 c show the pairs of transistor of an iteration；
Fig. 5 show the circuit structure diagram of cross-coupled current multiplexing basic unit in the embodiment of the present invention；
Fig. 6 show the current multiplexing capacitive cross termination power figure of n times iteration in the embodiment of the present invention；
Fig. 7 show the schematic diagram that voltage in preferred embodiment is converted to the mutual conductance amplifying circuit of electric current.
Specific implementation mode
The principle of the present embodiment is to propose multi-stage iteration at pair nmos transistor to further decrease the power consumption of amplifier
Single NMOS transistor or the new circuit structure of PMOS transistor are substituted with PMOS transistor.
The circuit thinking of the present embodiment is exactly the first step, and single NMOS transistor or PMOS transistor are used in pairs
NMOS transistor is substituted with PMOS transistor, shown in ginseng Fig. 4 a and Fig. 4 b.
The NMOS transistor or PMOS transistor of pairs of the inside are regarded as single transistor by second step.With pairs of
NMOS transistor and PMOS transistor substitute, shown in ginseng Fig. 4 c.
Third walks, can be further each NMOS transistor or PMOS crystalline substances in the circuit after an iteration
Body pipe regards single transistor as, is replaced with pairs of NMOS transistor and PMOS transistor.
4th step repeats third step, and until circuit, other limitations stop, such as supply voltage limitation or linearity limit
System.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out detailed retouch
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, the every other implementation that those of ordinary skill in the art are obtained without making creative work
Example, shall fall within the protection scope of the present invention.
The embodiment of the present invention using iteration at pair nmos transistor and PMOS transistor substitute single NMOS transistor or
The voltage of single PMOS transistor is converted to the trsanscondutance amplifier of electric current, including common-source amplifier, cathode-input amplifier, low noise are total
Source amplifier, low noise cathode-input amplifier etc., mainly by multiple iteration at pair nmos transistor and PMOS transistor iteration, after
The load of level-one.
The connection relation at pair nmos transistor and PMOS transistor of these iteration is all crystal under exchange status
The grid end of pipe is to be shorted together, and source is to be shorted together, and drain terminal is also to be shorted together.Between the grid end of transistor or
It is directly connected to together, or together by capacitance connection.Between the source of transistor or it is directly connected to one
It rises, or is coupled with power supply or ground, or together by capacitance connection.It is either straight between the drain terminal of transistor
It is connected together in succession, or together by capacitance connection.Voltage signal passes through the input pair of amplifier, by multiple pairs of
NMOS transistor and PMOS transistor are to being converted to electric current, and then electric current is superimposed in drain terminal and is sent into next stage load,
Join shown in Fig. 4 c.
Using above-mentioned circuit, difference channel is converted to, and pairs of NMOS transistor and PMOS transistor are utilized
Capacitive cross coupling is connected the source of corresponding transistor with grid end, constitutes capacitive cross couple current and is multiplexed basic unit
Circuit CRCC.In Figure 5, with the circuit in Fig. 3 b and 4b, differential-input differential output circuit is formed.Then utilize capacitance CC1,
CC12, CC2 and CC22 connect the source of NMOS transistor MN1 and MN2 and grid, utilize capacitance CC3, CC32, CC4 and CC42
The source of PMOS transistor MP1 and MP2 are connected with grid.
Using circuit in Fig. 5 as basic unit, 2 basic units are then used, are connected together up and down, and gone here and there
Connection, can further decrease power consumption needed for circuit in this way.As shown in Figure 6.In the source of transistor MN1, MN12, MP1 and MP12
In addition inductance, can also add NMOS transistor or the current source of PMOS transistor, it is multiple twice to constitute electric current shown in Fig. 7
With the cross-linked low-noise amplifier of capacitance.
It N number of basic unit, connects together, connects up and down, constitute n times iteration current multiplexing capacitance shown in fig. 6
Cross-coupled circuit figure
Other voltages that circuit in the present embodiment can also be applied to other than low-noise amplifier turn current amplifier unit.
In a preferred embodiment, circuit structure is as shown in Figure 7.
In overall structure, circuit uses common-gate low noise amplifier structure, compared with traditional structure, in the present embodiment
Circuit uses two-stage current multiplexing iteration structure, and for the mutual conductance also needed, electric current can reduce 4 times, by using
It inputs between positive and negative anodes through capacitive cross coupling, one times of electric current can be further decreased, in this way, needed for whole circuit
Quiescent current can reduce by 8 times compared with traditional circuit.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above is only the specific implementation mode of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection domain of the application.
Claims (4)
1. a kind of voltage is converted to the mutual conductance amplifying circuit of electric current, which is characterized in that including concatenated multiple cross-coupled currents
It is multiplexed basic unit, each cross-coupled current multiplexing basic unit includes：
One difference channel, including the first transistor and second transistor；
One difference cross-coupled circuit, including third transistor and the 4th transistor, the third transistor are brilliant with described first
Body tube current is multiplexed into pair, and the 4th transistor and the second transistor current multiplexing are pairs of,
It is straight between the drain electrode of the first transistor and the drain electrode of third transistor in the same cross-coupled current multiplexing basic unit
It is connected together, is directly linked together between the drain electrode of second transistor and the drain electrode of the 4th transistor in succession,
In adjacent two cross-coupled currents multiplexing basic unit, the source electrode of third transistor and adjacent cross-coupled current
The source electrode of the first transistor in multiplexing basic unit is directly linked together, and source electrode and adjacent of the 4th transistor intersect coupling
The source electrode for closing the second transistor in current multiplexing basic unit is directly linked together.
2. voltage according to claim 1 is converted to the mutual conductance amplifying circuit of electric current, it is characterised in that：The first crystal
Pipe and second transistor are P-type transistor, and the third transistor and the 4th transistor are N-type transistor, the first crystal
2 capacitances, the grid and second transistor of the first transistor are connected between the source electrode of pipe and the grid of second transistor
Source electrode between be connected with 2 capacitances, 2 electricity are connected between the source electrode of the third transistor and the grid of the 4th transistor
Hold, 2 capacitances are connected between the grid of the third transistor and the source electrode of the 4th transistor.
3. voltage according to claim 1 is converted to the mutual conductance amplifying circuit of electric current, it is characterised in that：The voltage conversion
Mutual conductance amplifying circuit for electric current is common source amplifying circuit or total grid amplifying circuit.
4. a kind of voltage is converted to the noise reduction method of the mutual conductance amplifying circuit of electric current, it is characterised in that：It will be in amplifying circuit
At least one transistor carry out n times iteration, n >=2, iteration refers to that a transistor is substituted for current multiplexing is pairs of each time
NMOS transistor and PMOS tube, the amplifying circuit includes concatenated 2 cross-coupled currents multiplexing basic unit, described every
A cross-coupled current multiplexing basic unit includes 2 pairs of NMOS transistors and PMOS transistor, and described 2 pairs of
It is coupled by capacitive cross between NMOS transistor and PMOS transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510237364.6A CN104836532B (en) | 2015-05-12 | 2015-05-12 | A kind of voltage is converted to the mutual conductance amplifying circuit of electric current |
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| CN201510237364.6A CN104836532B (en) | 2015-05-12 | 2015-05-12 | A kind of voltage is converted to the mutual conductance amplifying circuit of electric current |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101217282A (en) * | 2008-01-11 | 2008-07-09 | 复旦大学 | An A/D converter adopting mixed type dual-layer folding circuit |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
| CN204681318U (en) * | 2015-05-12 | 2015-09-30 | 苏州沿芯微电子科技有限公司 | A kind of voltage transitions is the mutual conductance amplifying circuit of electric current |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7936217B2 (en) * | 2007-11-29 | 2011-05-03 | Qualcomm, Incorporated | High-linearity complementary amplifier |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101217282A (en) * | 2008-01-11 | 2008-07-09 | 复旦大学 | An A/D converter adopting mixed type dual-layer folding circuit |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
| CN204681318U (en) * | 2015-05-12 | 2015-09-30 | 苏州沿芯微电子科技有限公司 | A kind of voltage transitions is the mutual conductance amplifying circuit of electric current |
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Address after: 215600 Zhangjiagang Economic Development Zone, Suzhou City, Jiangsu Province (City High-tech Entrepreneurship Service Center) Suzhou Zhongke Yanxin Microelectronics Technology Co., Ltd. Patentee after: Suzhou Zhongke Yanxin Microelectronics Technology Co.,Ltd. Address before: 215600 High-tech Venture Service Center B Block 307 Suzhou Yanxin Microelectronics Technology Co., Ltd. No. 1 Guotai North Road, Zhangjiagang City, Jiangsu Province Patentee before: SUZHOU ESIIC TECHNOLOGY CO.,LTD. |
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