CN202530196U - Seed rod for growing single crystal and single crystal growing equipment comprising seed rod - Google Patents
Seed rod for growing single crystal and single crystal growing equipment comprising seed rod Download PDFInfo
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- CN202530196U CN202530196U CN2012200278704U CN201220027870U CN202530196U CN 202530196 U CN202530196 U CN 202530196U CN 2012200278704 U CN2012200278704 U CN 2012200278704U CN 201220027870 U CN201220027870 U CN 201220027870U CN 202530196 U CN202530196 U CN 202530196U
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Abstract
The utility model provides a seed rod for growing single crystal. The seed rod comprises a pipe body, a rotary joint (12), a rotating piece (13), a weighing sensor (14) and a peripheral sheath (6), wherein the pipe body consists of inner pipes (7 and 9) and outer pipes (8 and 10), and certain distance is formed between each inner pipe and each outer pipe; the rotary joint (12) is arranged on the top of the pipe body, and the rotary joint (12) is provided with a cooling gas inlet (1) and a cooling gas outlet (2); the rotating piece (13), the weighing sensor (14) and the peripheral sheath (6) are arranged below the rotary joint (12); the rotating piece (13) is matched with a rotating driver (5) connected to the pipe body to realize rotation of the seed rod; the peripheral sheath (6) covers the outer pipes (8 and 10), and the peripheral sheath (6) is respectively provided with a cooling liquid inlet (3) and a cooling liquid outlet (4); the tail end of the pipe body is provided with a clamping groove (11); and the whole seed rod is sealed.
Description
Technical field
The utility model relates to a kind of single crystal growth apparatus, particularly a kind of seed rod that growing single-crystal is used from melt.
Background technology
Because many crystal have excellent optical property, mechanical property and chemicalstability, thereby are applied to fields such as military project, window material and substrate material.For example, sapphire crystal washes away because of its intensity is high, hardness is big, anti-, and can under near 2000 ℃ of pyritous mal-conditions, work, and is widely used.In recent years, along with development of modern science and technology, sapphire demand in the international market is more and more big, and is simultaneously also more and more high for the requirement of its crystal mass and size.
At present, the growing technology of suitable growing large-size, high quality sapphire crystal mainly contains kyropoulos and heat-exchanging method.Kyropoulos is similar with crystal pulling method, installs seed crystal at one on catching a cold (adopting water-cooled) seed rod more, and it is contacted with melt, if the temperature at interface is lower than zero pour, then carries out crystal growth along the seed crystal crystal orientation.For crystal is constantly grown up, just need reduce the temperature of melt gradually, rotating crystal simultaneously to improve the temperature distribution of melt, is carried crystal on also can be slowly, and to enlarge radiating surface, crystal does not contact with sidewall of crucible in the process of growth all the time.The advantage of kyropoulos is: in process of growth, can observe the crystalline growing state easily; Crystal is at the free surface outgrowth of melt, and do not contact with crucible, can significantly reduce crystalline stress like this and prevent the parasitic growth of pot wall; Use oriented seed that can be more convenient with wash crystalline substance, necking down technology, to obtain the more complete seed crystal and the crystal of required orientation; Growth interface is in melt inside, and the temperature field of solid-liquid interface is relatively stable.But there is following shortcoming simultaneously in kyropoulos: because the crystalline growth is to realize that through the temperature field of the formed temperature distribution of control heater be difficult to accomplish accurate control, error is bigger, and the hysteresis quality on the lifetime; And,, be difficult for realizing the control of seeding and crystalline growth velocity because the seeding process is very big to operator's experience dependency.
Heat-exchanging method is that polycrystal raw material is placed in the crucible, and a seed crystal is placed by the bottom centre of crucible, and the heat exchanger top contacts with crucible bottom center, with helium as heat exchange medium.In the crystal growing process, need in heat exchanger, lead to a certain amount of helium, with the cooling seed crystal, seed crystal can not be melted, but seed crystal face will with melt welding mutually.Simultaneously, keep well heater constant temperature.Behind temperature-stable, begin to increase helium gas flow, lead away heat from seed crystal, solid-liquid interface moves up, and crystal is grown on seed crystal.Heater power is constant in crystal growing process, has just arrived the suitable reduction temperature of final stage ability solid-liquid interface is upwards passed with stable speed, up to the whole crystallizations of melt.The great advantage of heat-exchanging method is: the thermograde in the melt is by the power control of well heater; Thermograde in the crystal has helium gas flow control in the heat exchanger; The two is separate, and the seeding process is become simply, help the temperature and crystalline growth velocity accurate control.But there is following shortcoming equally in heat-exchanging method: in the process of seeding or growth, can not observe, sidewall of crucible is close on its surface in the crystal growing process, is easy to occur heterogeneous forming core, and stress is bigger, is prone to cause crystal cleavage.
The utility model content
In order to address the above problem, the utility model provides a kind of growing single-crystal that is used for to use seed rod, and it comprises: body, this body have interior pipe (7,9) and outer tube (8,10) to constitute, and be spaced apart between above-mentioned interior pipe and the outer tube; Be installed in the vertical swivel joint 12 of above-mentioned body, this rotating head 12 is provided with cooling gas inlet 1 and cooling gas outlet 2; Tumbler 13 below above-mentioned rotating head 12, LOAD CELLS 14 and peripheral sheath 6; Wherein, this tumbler 13 cooperatively interacts to realize the rotation of seed rod with the rotating driver 5 that is connected on the above-mentioned body; This periphery sheath 6 covers on above-mentioned outer tube 8,10 outsides, is respectively equipped with quench liquid inlet 3 and cooling liquid outlet 4 on this periphery sheath 6; The end of above-mentioned body offers draw-in groove 11; And said seed rod integral sealing is provided with.
Can satisfy the lifting of seed rod, rotation and function of weighing through above-mentioned seed rod, and the seeding process can be observed; Simplified seeding process, adjustable thermograde and crystalline growth velocity, it is controlled to reach crystal growing process.In addition, reduce crystal stress and the heterogeneous forming core that prevents pot wall effectively, avoided crystal cleavage, crystal mass is significantly improved.This seed rod is simple in structure, easy to use, technology is flexible, can effectively shorten the crystal growth cycle, satisfies the industrialization demand.
In a kind of embodiment of the utility model, adopt helium as cooling gas.
Because the helium chemical property is stable, has bigger specific heat capacity and thermal conductivity, and can directly act on high temperature section, and is stronger to the control action kou of crystal growing process.
Description of drawings
Fig. 1 shows the sectional view of the seed rod of the utility model;
Fig. 2 shows the synoptic diagram of the molybdenum sheet that is used with seed rod shown in Figure 1.
Embodiment
Specify below in conjunction with a kind of preferred implementation of accompanying drawing 1,2 for the seed rod of the utility model.As shown in Figure 1, the columniform body of the whole one-tenth of this seed rod, it comprises through managing 9 in pipe 7 and the miramint in the stainless steel that welds together after being threaded; And stainless steel outer tube 8 and miramint outer tube 10 through welding together after being threaded.In the stainless steel between pipe 7 and the stainless steel outer tube 8, setting all spaced apart between the outer tube 10 of the interior pipe 9 of miramint and miramint.
Be provided with cooling gas inlet 1 and the cooling gas outlet 2 that is installed on the swivel joint 12 on the top of above-mentioned body.Cooling gas, through the 1 entering body that enters the mouth, the cooling seed crystal is taken heat away, carries out crystal growth control, and the cooling gas after the heat exchange is through outlet 2 outflow bodys.
The below of above-mentioned rotating head 12 is provided with tumbler 13 and LOAD CELLS 14 successively.This tumbler 13 cooperatively interacts realizing the spinfunction of seed rod with being connected rotating machine 5 on the body, and, can rely on transmission mechanism on the body of heater to keep the function that lifts of seed rod.This LOAD CELLS 14 is used for the monitoring to crystal weight.
The below of said LOAD CELLS 14 is provided with peripheral stainless steel water jacket 6 covers that cover on stainless steel outer tube 8 outsides, and peripheral stainless steel water jacket 6 passes through magnetic current sealing.This periphery stainless steel water jacket 6 puts and is respectively equipped with quench liquid inlet 3 and cooling liquid outlet 4.Circulating cooling liquid gets in the peripheral stainless steel water jacket 6 to reduce seed rod upper end temperature through inlet 3, and subsequently, circulating cooling liquid flows out seed rods through outlet 4.
The end of seed rod has a draw-in groove 11, with molybdenum sheet 15 (see figure 2)s through on its circular arc, having groove and tungsten silk install, fixing seed crystal.
Whole seed rod and all welds all adopt and are tightly connected, air tight, leakage, thus the circulation gas of realization seed rod, liquid cooling are but under the situation that guarantees better sealing effectiveness.And, after seed rod processes, have certain weight capacity.
In the optimal way of the utility model seed rod, with helium as cooling gas, with water as cooling liqs.Through accuracy controlling for helium gas flow, make helium get into seed rod with the cooling seed crystal, take away heat through carrying out heat exchange, realize crystal growth.Simultaneously, cool off seed rod top, to reduce seed rod upper end temperature through recirculated cooling water.
Below, describe for the method for carrying out crystal growth through the utility model seed rod.At first, at the terminal seed crystal of installing of seed rod, adopt ratio-frequency heating or resistive heating so that the raw material fusing is controlled melt temperature simultaneously to guarantee that seed crystal is not melted.As heat exchange medium, a certain amount of helium is fed seed rod with helium, with the cooling seed crystal.When seeding, keep melt temperature constant, the control helium gas flow descends and rotary seed crystal rod, makes seed crystal and melt that good welding interface arranged.Beginning increases helium gas flow gradually behind temperature-stable, leads away heat from seed crystal, and crystal is grown along the seed crystal crystal orientation.In crystal growing process, can change the heater-combining power regulation by helium gas flow, the control crystalline growth velocity.
More than, with reference to illustrated embodiment the utility model is illustrated, but this is an example, those skilled in the art know that and from then on can carry out various distortion and other impartial embodiment.For example; Though the utility model embodiment only shows parts such as tumbler 13, LOAD CELLS 14 and peripheral stainless steel water jacket 6 along seed rod specific setting order longitudinally; But, can carry out corresponding conversion for the order of above-mentioned parts according to design demand.Therefore, scope of the present invention should be confirmed by appended claim scope and impartial therewith scope.
Claims (6)
1. one kind is used for growing single-crystal and uses seed rod, it is characterized in that, comprising:
Body, this body have interior pipe (7,9) and outer tube (8,10) to constitute, and be spaced apart between above-mentioned interior pipe and the outer tube;
Be installed in the vertical swivel joint of above-mentioned body (12), this rotating head (12) is provided with cooling gas inlet (1) and cooling gas outlet (2);
Be arranged on tumbler (13), LOAD CELLS (14) and the peripheral sheath (6) of above-mentioned rotating head (12) below; Wherein, above-mentioned tumbler (13) cooperatively interacts to realize the rotation of seed rod with the rotating driver (5) that is connected on the above-mentioned body; This periphery sheath (6) covers on the outside of above-mentioned outer tube (8,10), and is respectively equipped with quench liquid inlet (3) and cooling liquid outlet (4) on it;
The end of above-mentioned body offers draw-in groove (11); And,
Said seed rod integral sealing is provided with.
2. according to claim 1ly be used for growing single-crystal and use seed rod, it is characterized in that:
Pipe (7,9) is made up of pipe (7) in the stainless steel and the interior pipe of miramint (9) in said, and/or said outer tube (8,10) is made up of stainless steel outer tube (8) and miramint outer tube (10).
3. according to claim 2ly be used for growing single-crystal and use seed rod, it is characterized in that:
Pipe (7) is welded to each other through after being threaded with the interior pipe of miramint (9) in the said stainless steel, and/or said stainless steel outer tube (8) is welded to each other through after being threaded with miramint outer tube (10).
4. according to claim 1ly be used for growing single-crystal and use seed rod, it is characterized in that:
Above-mentioned cooling gas is a helium.
5. according to claim 1ly be used for growing single-crystal and use seed rod, it is characterized in that:
Above-mentioned quench liquid is a water.
6. equipment that is used for growing single-crystal, it comprises like any described seed rod among the claim 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200278704U CN202530196U (en) | 2012-01-21 | 2012-01-21 | Seed rod for growing single crystal and single crystal growing equipment comprising seed rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200278704U CN202530196U (en) | 2012-01-21 | 2012-01-21 | Seed rod for growing single crystal and single crystal growing equipment comprising seed rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202530196U true CN202530196U (en) | 2012-11-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200278704U Expired - Fee Related CN202530196U (en) | 2012-01-21 | 2012-01-21 | Seed rod for growing single crystal and single crystal growing equipment comprising seed rod |
Country Status (1)
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| CN (1) | CN202530196U (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103924299A (en) * | 2014-05-12 | 2014-07-16 | 深圳晶蓝地光电科技有限公司 | Ventilation method for sapphire crystal growth furnace |
| CN103938267A (en) * | 2014-05-12 | 2014-07-23 | 深圳晶蓝地光电科技有限公司 | Cooling method of seed crystal clamping rod |
| CN104264230A (en) * | 2014-09-30 | 2015-01-07 | 深圳市盛世智能装备有限公司 | Cooling pull rod for high temperature furnace for crystal growth and manufacturing method of cooling pull rod |
| CN104562202A (en) * | 2015-01-28 | 2015-04-29 | 杭州晶一智能科技有限公司 | Crystal transformation mechanism for sapphire crystal growth equipment |
| CN105506732A (en) * | 2014-09-23 | 2016-04-20 | 上海朗兆机电设备有限公司 | Stretching seed crystal rod |
| CN105803521A (en) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | Single crystal furnace for Kyropoulos method, seed crystal protection structure and crystal growth control method |
| CN105803529A (en) * | 2015-01-16 | 2016-07-27 | 丰田自动车株式会社 | Method for producing SiC single crystal |
| CN105970294A (en) * | 2016-06-23 | 2016-09-28 | 山东天岳晶体材料有限公司 | Liquid-phase growing silicon carbide seed crystal shaft device |
| CN106987903A (en) * | 2017-03-27 | 2017-07-28 | 宁夏佳晶科技有限公司 | A kind of improved large scale synthetic sapphire production technology |
| CN110565166A (en) * | 2019-10-30 | 2019-12-13 | 浙江昀丰新材料科技股份有限公司 | Temperature gradient adjusting device for crystal growth |
| CN112647124A (en) * | 2020-11-26 | 2021-04-13 | 徐州晶睿半导体装备科技有限公司 | Pulling system of crystal growth equipment and crystal growth equipment |
-
2012
- 2012-01-21 CN CN2012200278704U patent/CN202530196U/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938267A (en) * | 2014-05-12 | 2014-07-23 | 深圳晶蓝地光电科技有限公司 | Cooling method of seed crystal clamping rod |
| CN103924299A (en) * | 2014-05-12 | 2014-07-16 | 深圳晶蓝地光电科技有限公司 | Ventilation method for sapphire crystal growth furnace |
| CN105506732A (en) * | 2014-09-23 | 2016-04-20 | 上海朗兆机电设备有限公司 | Stretching seed crystal rod |
| CN104264230A (en) * | 2014-09-30 | 2015-01-07 | 深圳市盛世智能装备有限公司 | Cooling pull rod for high temperature furnace for crystal growth and manufacturing method of cooling pull rod |
| CN105803521A (en) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | Single crystal furnace for Kyropoulos method, seed crystal protection structure and crystal growth control method |
| US10023975B2 (en) | 2015-01-16 | 2018-07-17 | Toyota Jidosha Kabushiki Kaisha | Method for producing SiC single crystal |
| CN105803529A (en) * | 2015-01-16 | 2016-07-27 | 丰田自动车株式会社 | Method for producing SiC single crystal |
| CN104562202A (en) * | 2015-01-28 | 2015-04-29 | 杭州晶一智能科技有限公司 | Crystal transformation mechanism for sapphire crystal growth equipment |
| CN105970294A (en) * | 2016-06-23 | 2016-09-28 | 山东天岳晶体材料有限公司 | Liquid-phase growing silicon carbide seed crystal shaft device |
| CN105970294B (en) * | 2016-06-23 | 2018-10-19 | 山东天岳晶体材料有限公司 | A kind of liquid growth silicon carbide seed shaft device |
| CN106987903A (en) * | 2017-03-27 | 2017-07-28 | 宁夏佳晶科技有限公司 | A kind of improved large scale synthetic sapphire production technology |
| CN110565166A (en) * | 2019-10-30 | 2019-12-13 | 浙江昀丰新材料科技股份有限公司 | Temperature gradient adjusting device for crystal growth |
| CN112647124A (en) * | 2020-11-26 | 2021-04-13 | 徐州晶睿半导体装备科技有限公司 | Pulling system of crystal growth equipment and crystal growth equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20130121 |