CN206624946U - A kind of pressure furnace for being used to prepare indium phosphide single crystal - Google Patents
A kind of pressure furnace for being used to prepare indium phosphide single crystal Download PDFInfo
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- CN206624946U CN206624946U CN201720132435.0U CN201720132435U CN206624946U CN 206624946 U CN206624946 U CN 206624946U CN 201720132435 U CN201720132435 U CN 201720132435U CN 206624946 U CN206624946 U CN 206624946U
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Abstract
The utility model discloses a kind of pressure furnace for being used to prepare indium phosphide single crystal, including support frame, fixed frame, body of heater and burner hearth, heating unit is provided with the burner hearth, crucible fixed seat is provided with the heating unit, the body of heater includes hollow housing, upper end cover and bottom end cover, the fixed frame includes pressing plate, support plate, side plate, screw rod and nut, the pressing plate is located on body of heater, lower both ends, the support plate is set on housing, the side plate is fixedly connected on the both sides of support plate, the screw rod runs through pressing plate and support plate, and by furnace sealing and it is fixed on by nut on fixed frame, switching mechanism is provided between the side wall of side plate and the support frame upper end.The pressure furnace of the present utility model for being used to prepare indium phosphide single crystal, realizes that body of heater switches between vertically and horizontally by switching mechanism, is easy to shove charge and unloads stove, mitigate the workload of operating personnel, improve production efficiency.
Description
Technical field
It the utility model is related to technical field of crystal growth, and in particular to one kind prepares phosphatization using VGF
The pressure furnace of indium monocrystalline.
Background technology
With the fast development of fiber optic communication, high-speed electronic components, high performance solar batteries and laser diode, people
It is more and more urgent to the demand of major diameter, the monocrystal indium phosphide (InP) of high-purity.Monocrystal InP is particularly suitable as one kind
Structural material manufactures the substrate of the fiber optic source and detector, high speed integrated circuit and high-frequency microwave device for Lattice Matching.
The growing method of indium phosphide single crystal mainly includes two kinds of LEC methods and VGF methods.LEC methods, also referred to as liquid encapsulate Czochralski technique.This
Kind method equipment cost is higher, and crystal stress is larger, and dislocation density is high, and crystal growth technique is complicated, is unfavorable for growing high quality
Large-sized monocrystalline.
What application was more at present is VGF methods, also referred to as VGF, and this method is by equipped with indium phosphide polycrystal raw material
Pyrolytic boron nitride (PBN) crucible be encapsulated among a silica crucible, be then vertically arranged in the relevant temperature set in VGF stoves
Gradient position, red phosphorus is distributed with silica crucible, after polycrystal raw material fine melt, is slowly crystallized from lower end thereof and is extended to top
The growing method of one end.This method is because the speed of growth is slower, thermograde very little, therefore stress is smaller suffered by crystal,
So the relatively low crystalline material of dislocation density can be grown.
The existing pressure furnace for using VGF methods to prepare indium phosphide single crystal is all for long column construction fixed vertically, equipped with phosphatization
The crucible of raw material needs to be placed and taken out from the plan vertical of pressure furnace by lifting device needed for indium growth, crucible positioning and height
Press the sealing of furnace roof portion all very inconvenient.Simultaneously because need to carry out at high temperature under high pressure in indium phosphide single crystal growth, in phosphatization
After the completion of indium single crystal growth process and growth, it is required for cooling to the body of heater surface of pressure furnace, prevents high temperature scald from using
Person.
Utility model content
For above-mentioned the deficiencies in the prior art, the utility model provides a kind of pressure furnace for being used to prepare indium phosphide single crystal,
Realizing high temperature high voltage resistant, corrosion resistance, the coefficient of heat conduction is stable, while to ensure the generation quality of indium phosphide single crystal, leads to
Cross switching mechanism and realize that body of heater switches between vertically and horizontally, be easy to shove charge and unload stove, mitigate the work of operating personnel
Amount, so as to improve production efficiency.
To realize object above, the utility model adopts the technical scheme that：
A kind of pressure furnace for being used to prepare indium phosphide single crystal, including support frame, fixed frame, body of heater and burner hearth, the stove
Heating unit is provided with thorax, is provided with crucible fixed seat in the heating unit, the body of heater including hollow housing, upper end cover and
Bottom end cover, the upper end cover and bottom end cover are tightly connected to form the burner hearth, the fixed frame by sealing ring and housing
Frame includes pressing plate, support plate, side plate, screw rod and nut, and the pressing plate is located at body of heater upper/lower terminal, and the support plate is set in
On housing, the side plate is fixedly connected on the both sides of support plate, and the screw rod runs through pressing plate and support plate, and by nut by stove
Body is sealed and is fixed on fixed frame, and switching mechanism is provided between the side wall of side plate and the support frame upper end, described solid
Determine framework and support frame is rotatablely connected by switching mechanism.
Further, in order to cool to the body of heater surface of pressure furnace, prevent high temperature from scalding user, the housing
Outer surface is wound with hollow copper tubing, and the both ends of the hollow copper tubing can connect with cooling system.Body of heater is realized using recirculated water
The cooling on surface.
Further, Thermal protection unit is additionally provided with the burner hearth, the Thermal protection unit is located at heating unit and housing
Between.
Further, the switching mechanism also includes a handwheel for being arranged on support frame side.By rotating handwheel, realize
The upset of body of heater.
Further, after the completion of indium phosphide single crystal generation, due to high temperature and negative pressure be present, for convenience of upper end cover is opened,
Draw ring is provided with the top surface of the upper end cover.
Further, the body of heater is the body of heater made of stainless steel material.
The pressure furnace of the present utility model for being used to prepare indium phosphide single crystal, by the way that stainless steel body of heater is fixed on into fixed frame
In, realize the high temperature high voltage resistant and corrosion resistance of body of heater；The hollow copper tubing of cooling water can be passed through by being wound on body of heater shell,
Body of heater surface temperature is effectively reduced, prevents from scalding user；By Thermal protection unit, make the coefficient of heat conduction stable；Pass through upset
Mechanism realizes that body of heater switches between vertically and horizontally, is easy to shove charge and unloads stove, mitigates the workload of operating personnel, improves
Production efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model pressure furnace；
Fig. 2 is the principal section view of the utility model pressure furnace；
Description of reference numerals：1- support frames；2- fixed frames；3- bodies of heater；4- burner hearths；5- heating units；6- crucibles are fixed
Seat；7- switching mechanisms；8- hollow copper tubings；9- Thermal protection units；10- handwheels；11- crucibles；21- pressing plates；22- support plates；23- sides
Plate；24- screw rods；25- nuts；31- housings；32- upper end covers；33- bottom end covers；34- sealing rings；35- draw rings.
Embodiment
Content of the present utility model is described in further details with reference to the accompanying drawings and detailed description.
Embodiment：
It refer to shown in Fig. 1 and Fig. 2, a kind of pressure furnace for being used to prepare indium phosphide single crystal, including support frame 1, fixed frame
Frame 2, body of heater 3 and burner hearth 4.Support frame as described above 1 is is made up of two panels L-shaped brackets, and its underpart is fixed with connecting rod, its top shape
Into splay opening, for installing fixed frame (2).
The body of heater 3 is made of stainless steel material, including hollow housing 31, upper end cover 32 and bottom end cover 33, described
Upper end cover 32 and bottom end cover 33 are tightly connected to form the burner hearth 4 by sealing ring 34 and housing 31, are set in the burner hearth 4
There is heating unit 5, crucible fixed seat 6 is provided with the heating unit 5, the crucible 11 equipped with raw material needed for indium phosphide growth is removable
Unloading property is arranged in crucible fixed seat 6, and the crucible 11 includes the silica crucible of sealing and the pyrolysis nitrogen in silica crucible
Change boron (PBN) crucible, the raw material is seed crystal, InP polycrystalline, boron oxide and phosphorus.Thermal protection unit 9 is additionally provided with the burner hearth 4,
The Thermal protection unit 9 is between heating unit 5 and housing 31, for ensureing that temperature needed for indium phosphide single crystal growth maintains
Setting value, while prevent excessive heat transfer to body of heater 3.
The fixed frame 2 includes pressing plate 21, support plate 22, side plate 23, screw rod 24 and nut 25, the number of the pressing plate 21
Measure as two pieces, respectively positioned at the upper/lower terminal of body of heater 3, its middle part is provided with through hole, so that the various pipelines of pressure furnace can lead to
Cross, the quantity of the support plate 22 and side plate 23 is two pieces, and wherein support plate 22 is set on housing 31, and side plate 23 can pass through
Fixed screw is fixed on the both sides of support plate 22, forms the supporting structure of a rectangle, the screw rod 24 is through pressing plate 21 and supporting
Plate 22, its both ends are all provided with external screw thread, the distance of upper lower platen 21 are adjusted by nut 25, by upper end cover 32, housing 31 and lower end
Lid 33 is sealed, and supporting plate 22 is fixed on to the correct position of screw rod 24 finally by fixed screw, you can completes the He of body of heater 3
The installation of fixed frame 2.
Switching mechanism 7, the fixed frame 2 and support are provided between the side wall of side plate 23 and support frame 1 upper end
Frame 1 is rotatablely connected by switching mechanism 7.Switching mechanism 7 can use gear mechanism or other prior arts, as long as can realize solid
180 ° of upsets between framework 2 and support frame 1 are determined, herein with regard to not repeating its detailed construction.Wherein, switching mechanism
7 can be driven by external motor, be also manually operable, and be the hand by being arranged on the side of support frame 1 in the present embodiment
Wheel 10, by rotation hand wheel 10, the upset of fixed frame 2 is driven, so as to realize the upset of body of heater 3.
Further, in order to cool to the surface of body of heater 3, prevent high temperature from scalding user, in the outer of the housing 31
Surface wrap hollow copper tubing 8, the gapless of hollow copper tubing 8 is preferably wrapped in the outer surface of housing 31, then by setting cooling system
System, the both ends of hollow copper tubing 8 are connected with cooling system, the cooling on the surface of body of heater 3 is realized using recirculated water.This winding is hollow
The type of cooling of copper pipe 8, it is more flexible and changeable compared to heat dissipation channel is set inside housing 31, and be easy to safeguard.
Further, when indium phosphide single crystal preparation completion needs blow-on, rotation hand wheel 10 overturns body of heater 3 to horizontal position
Put, due to the pressure inside the high temperature and burner hearth 4 of body of heater 3, still directly can not open upper end cover 32, now with regard to needing to make
With instruments such as pull bars, the draw ring 35 on upper end cover 32 is caught on, you can easily upper end cover 32 is opened, takes out the phosphatization in burner hearth 4
Indium monocrystalline.
The pressure furnace of the present utility model for being used to prepare indium phosphide single crystal, by the way that stainless steel body of heater 3 is fixed on into fixed frame
In frame 2, the high temperature high voltage resistant and corrosion resistance of body of heater 3 are realized；The sky of cooling water can be passed through by being wound in the housing 31 of body of heater 3
Heart copper pipe 8, the surface temperature of body of heater 3 is effectively reduced, prevent from scalding user；By Thermal protection unit 9, make the coefficient of heat conduction steady
It is fixed；Switching of the body of heater 3 between vertically and horizontally position can be realized by switching mechanism 7, be easy to shove charge and unload stove, mitigate behaviour
Make the workload of personnel, improve production efficiency.
Above-listed detailed description is illustrating for the utility model possible embodiments, and the embodiment simultaneously is not used to limit
The scope of protection of the utility model, all equivalence enforcements or change without departing from carried out by the utility model, it is intended to be limited solely by this case
In protection domain.
Claims (6)
1. a kind of pressure furnace for being used to prepare indium phosphide single crystal, including support frame (1), fixed frame (2), body of heater (3) and burner hearth
(4) heating unit (5), is provided with the burner hearth (4), is provided with crucible fixed seat (6) in the heating unit (5), its feature exists
In the body of heater (3) includes hollow housing (31), upper end cover (32) and bottom end cover (33), the upper end cover (32) and lower end
Lid (33) is tightly connected to form the burner hearth (4) by sealing ring (34) and housing (31), and the fixed frame (2) includes
Pressing plate (21), support plate (22), side plate (23), screw rod (24) and nut (25), it is upper and lower that the pressing plate (21) is located at body of heater (3)
Both ends, the support plate (22) are set on housing (31), and the side plate (23) is fixedly connected on the both sides of support plate (22), institute
State screw rod (24) and run through pressing plate (21) and support plate (22), and body of heater (3) is sealed by nut (25) and is fixed on fixed frame
On frame (2), switching mechanism (7), the fixed frame are provided between the side wall of the side plate (23) and support frame (1) upper end
(2) it is rotatablely connected with support frame (1) by switching mechanism (7).
2. the pressure furnace according to claim 1 for being used to prepare indium phosphide single crystal, it is characterised in that the housing (31)
Outer surface is wound with hollow copper tubing (8), and the both ends of the hollow copper tubing (8) can connect with cooling system.
3. the pressure furnace according to claim 2 for being used to prepare indium phosphide single crystal, it is characterised in that in the burner hearth (4)
Thermal protection unit (9) is additionally provided with, the Thermal protection unit (9) is located between heating unit (5) and housing (31).
4. according to any described pressure furnaces for being used to prepare indium phosphide single crystal of claim 1-3, it is characterised in that the upset
Mechanism (7) also includes a handwheel (10) for being arranged on support frame (1) side.
5. the pressure furnace according to claim 4 for being used to prepare indium phosphide single crystal, it is characterised in that the upper end cover (32)
Top surface be provided with draw ring (35).
6. according to claim 4 be used to prepare the pressure furnace of indium phosphide single crystal, it is characterised in that the body of heater (3) is
Body of heater (3) made of stainless steel material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720132435.0U CN206624946U (en) | 2017-02-14 | 2017-02-14 | A kind of pressure furnace for being used to prepare indium phosphide single crystal |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720132435.0U CN206624946U (en) | 2017-02-14 | 2017-02-14 | A kind of pressure furnace for being used to prepare indium phosphide single crystal |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108265327A (en) * | 2018-04-06 | 2018-07-10 | 深圳市东晶体技术有限公司 | A kind of pressure furnace for being used to prepare indium phosphide single crystal |
| CN109114068A (en) * | 2018-10-23 | 2019-01-01 | 北京特种机械研究所 | A kind of slave cylinder adjustment mechanism |
| CN112195518A (en) * | 2020-09-25 | 2021-01-08 | 威科赛乐微电子股份有限公司 | Single crystal furnace for VB-method InP single crystal growth |
| CN113005426A (en) * | 2021-02-18 | 2021-06-22 | 上海韵申新能源科技有限公司 | Preparation method and equipment of pyrolytic boron nitride |
-
2017
- 2017-02-14 CN CN201720132435.0U patent/CN206624946U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108265327A (en) * | 2018-04-06 | 2018-07-10 | 深圳市东晶体技术有限公司 | A kind of pressure furnace for being used to prepare indium phosphide single crystal |
| CN109114068A (en) * | 2018-10-23 | 2019-01-01 | 北京特种机械研究所 | A kind of slave cylinder adjustment mechanism |
| CN112195518A (en) * | 2020-09-25 | 2021-01-08 | 威科赛乐微电子股份有限公司 | Single crystal furnace for VB-method InP single crystal growth |
| CN113005426A (en) * | 2021-02-18 | 2021-06-22 | 上海韵申新能源科技有限公司 | Preparation method and equipment of pyrolytic boron nitride |
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