CN206591201U - Crystal silicon ingot furnace - Google Patents
Crystal silicon ingot furnace Download PDFInfo
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- CN206591201U CN206591201U CN201720212243.0U CN201720212243U CN206591201U CN 206591201 U CN206591201 U CN 206591201U CN 201720212243 U CN201720212243 U CN 201720212243U CN 206591201 U CN206591201 U CN 206591201U
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Abstract
The utility model is related to a kind of crystal silicon ingot furnace, including：Body of heater；Heat-insulation cage；Heat exchange platform；Aqueous cold plate, including the heat-conducting plate contacted with heat exchange platform bottom, the cooling water pipe being in contact with the surface of heat-conducting plate, wherein cooling water pipe is extended in the way of constant speed spiral to the periphery on the surface of heat-conducting plate from the center of heat-conducting plate, the water filling port of cooling water pipe corresponds to the center of heat-conducting plate, projection of the delivery port in heat conduction plate surface is close to the edge of heat-conducting plate, the center of heat-conducting plate is corresponding with heat exchange platform bottom centre, and the edge of heat-conducting plate is overlapped with heat exchange platform bottom edge.Central region of the cooling water first to heat exchange platform bottom radiates, take away more heat transfer, water temperature has raised therefore has only taken away a small amount of heat when cooling water passes through surrounding, so that heat is mainly radiated by the central region of heat exchange platform, surrounding auxiliary heat dissipation, and cooling water pipe is uniformly distributed, the solid liquid interface of opposed flattened, middle dimpling can be obtained, beneficial to ingot casting impurities removal.
Description
Technical field
The utility model is related to solar energy crystal silicon growth field, and in particular to a kind of crystal silicon ingot furnace.
Background technology
Ingot casting efficient polycrystalline silicon/quasi- monocrystalline is to use induction type method casting crystalline to obtain on ingot furnace, then is passed through
Evolution, cut into slices link, the silicon chip with high-conversion rate that can be produced.Its main technique is by ingot furnace silica crucible
Bottom increase seed crystal (polycrystalline broken material or single crystal ingot), and under vacuum and protective atmosphere state, using accurate segmentation temperature control, protect
Demonstrate,prove seed portion when silicon material is melted to melt, thus grow high-efficiency polycrystalline or mono-like silicon ingot.Traditional ingot furnace, solid-liquid when long brilliant
Interface is in W types, is unfavorable for the impurities removal of edge ingot casting.And it is generally believed that the solid liquid interface of opposed flattened, middle dimpling is beneficial to edge
The impurities removal of ingot casting.
Utility model content
Based on this, it is necessary to provide a kind of crystal silicon ingot furnace for the solid liquid interface for resulting in opposed flattened, middle dimpling,
In favor of ingot casting impurities removal.
A kind of crystal silicon ingot furnace, including：Body of heater；Heat-insulation cage, is arranged in body of heater；Heat exchange platform, in heat-insulation cage, heat
The top of board is to carry crucible；Aqueous cold plate, including the heat-conducting plate contacted with the heat exchange platform bottom and the heat conduction
The cooling water pipe that the surface of plate is in contact, wherein cooling water pipe on the surface of the heat-conducting plate from the center of the heat-conducting plate to
Periphery is extended in the way of constant speed spiral, and the water filling port of the cooling water pipe corresponds to the center of the heat-conducting plate, water outlet
Projection of the mouth in the heat conduction plate surface is close to the edge of heat-conducting plate, the center of the heat-conducting plate and the heat exchange platform bottom
Center is corresponding, and the edge of the heat-conducting plate is overlapped with heat exchange platform bottom edge.
Above-mentioned crystal silicon ingot furnace, the water filling port of spiral cooling water pipe is arranged on the middle position of heat-conducting plate, delivery port
Positioned at the marginal position of heat-conducting plate, the central region that such cooling water enters after cooling water pipe first to heat exchange platform bottom is dissipated
Heat, takes away more heat transfer, water temperature has raised therefore only taken away a small amount of heat when cooling water passes through surrounding so that heat mainly passes through heat
The central region radiating of board, surrounding auxiliary heat dissipation, and cooling water pipe are uniformly distributed, so as to obtain opposed flattened, centre
The solid liquid interface of dimpling, beneficial to ingot casting impurities removal.
In one of the embodiments, the water filling port and delivery port are each perpendicular to the surface of the heat-conducting plate.
In one of the embodiments, crystal silicon ingot furnace also includes heat insulation bottom board, and heat insulation bottom board can be enclosed in heat-insulation cage
Airtight chamber is formed together, and water filling port and delivery port extend towards the heat insulation bottom board and pass through the heat insulation bottom board.
In one of the embodiments, the heat-conducting plate is copper coin, and the cooling water pipe is copper pipe, and the copper pipe is welded on
On the copper coin.
In one of the embodiments, the heat-conducting plate is rounded or square.
In one of the embodiments, in addition to water system and recovery system, the feed water inlet of the water system and institute
State the water filling port connection of cooling water pipe, hot water of the recovery system to be recovered from delivery port outflow.
In one of the embodiments, the water system has volume control device, cold in the unit interval to control
But the flow of water pipe reclaimed water.
In one of the embodiments, the aqueous cold plate is fixed on the bottom of the heat exchange platform by the heat-conducting plate.
Brief description of the drawings
Fig. 1 is the structural representation of the crystal silicon ingot furnace of one embodiment；
Fig. 2 is the structural representation of the aqueous cold plate of crystal silicon ingot furnace shown in Fig. 1；
Fig. 3 be Fig. 2 in A-A to sectional view.
Embodiment
To enable above-mentioned purpose of the present utility model, feature and advantage more obvious understandable, below in conjunction with the accompanying drawings to this
The embodiment of utility model is described in detail.Elaborate many details in order to abundant in the following description
Understand the utility model.But the utility model can be implemented with being much different from other manner described here, this area
Technical staff can do similar improvement in the case of without prejudice to the utility model intension, therefore the utility model is not by following public affairs
The limitation for the specific embodiment opened.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or can also have element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with belonging to technology of the present utility model
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein " and/or " include
The arbitrary and all combination of one or more related Listed Items.
Below in conjunction with the accompanying drawings, the better embodiment of crystal silicon ingot furnace of the present utility model is illustrated.
The utility model provides a kind of crystal silicon ingot furnace, can obtain more smooth, middle micro- in crystal growing process
Convex solid liquid interface, in favor of ingot casting impurities removal.
Join Fig. 1, the crystal silicon ingot furnace of the utility model one embodiment includes：Body of heater 110, it is arranged in body of heater 110：
Liftable heat-insulation cage 120, heat exchange platform 130, the crucible 140 being placed on heat exchange platform 130, it is arranged at the surrounding of crucible 140
Graphite protective plate 150, the heater 160 to the silicon material in fusion crucible 140, positioned at heat exchange platform 130, be arranged on heat exchange
The aqueous cold plate 170 and liftable heat insulation bottom board 180 of the bottom of platform 130.
Heat insulation bottom board 180, heat-insulation cage 120 can form closed cavity together, the thermal field to provide closing.When the closing
During cavity formation, heat exchange platform 130, crucible 140, graphite protective plate 150, heater 160, aqueous cold plate 170 are to be located at the envelope
Close in cavity.
Join Fig. 1, the top of heat exchange platform 130 is to carry crucible 140.The bottom of heat exchange platform 130 is provided with aqueous cold plate
170.Aqueous cold plate 170 can cause heat mainly by heat to be radiated when crystal growing stage starts to heat exchange platform 130
The central region radiating of board 130, surrounding auxiliary heat dissipation, so as to obtain the solid liquid interface of opposed flattened, middle dimpling, is beneficial to
Ingot casting impurities removal.
Join Fig. 2 and Fig. 3, in one embodiment, aqueous cold plate 170 includes heat-conducting plate 172 and cooling water pipe 174.Wherein, lead
One surface of hot plate 172 with the bottom of heat exchange platform 130 to contact to conduct heat.Another surface of heat-conducting plate 172
With the wall contacts of cooling water pipe 174.
Join Fig. 2, in one embodiment, cooling water pipe 174 on the surface of heat-conducting plate 172 in the shape of a spiral.Wherein, cooling water pipe
174 are extended in the way of constant speed spiral to the periphery from the center of heat-conducting plate 172 so that on the surface of heat-conducting plate 172, from its center to
Spacing between the multi-turn cooling water pipe 174 of periphery is uniform.The water filling port 1741 of cooling water pipe 174 corresponds to heat-conducting plate simultaneously
172 center, projection of the delivery port 1743 on the surface of heat-conducting plate 172 is close to the edge of heat-conducting plate 172.Heat-conducting plate 172
After being contacted with the bottom of heat exchange platform 130, the center of heat-conducting plate 172 is corresponding with the bottom centre of heat exchange platform 130, and heat-conducting plate
172 edge is overlapped with the bottom edge of heat exchange platform 130, efficiently to receive the bottom of heat exchange platform 130 biography comprehensively
The heat passed.
The silicon material heating melting stage terminates, into crystal growing stage.Now, Automatic water-filling mouthful 1741 is noted into cooling water pipe 174
Enter cooling water.The temperature for having just enter into the water of cooling water pipe 174 is relatively low, and heat-conducting plate is first passed through during advancing along helical pipe
172 center, first the central region to the bottom of heat exchange platform 130 radiate, so as to take away heat exchange platform 130
The more heat transfer of central region.When the surrounding position of flow of cooling water to heat-conducting plate 172, cooling water is to heat exchange platform 130
Peripheral regions are radiated, and water temperature has raised therefore only taken away a small amount of heat when cooling water passes through 172 surrounding of heat-conducting plate, so as to realize
Heat is mainly radiated by the central region of heat exchange platform 130, surrounding auxiliary heat dissipation, and cooling water pipe 174 is from heat-conducting plate 172
Center be evenly arranged to the periphery, Transverse Temperature Gradient is smaller, so as to obtain the solid liquid interface of opposed flattened, middle dimpling, profit
In ingot casting impurities removal, and then ensure the growth quality of crystal.
In one embodiment, heat-conducting plate 172 is copper coin, and cooling water pipe 174 is copper pipe, and copper pipe is welded on copper coin.Utilize
Welding procedure connects cooling water pipe 174 and heat-conducting plate 172, and connecting portion can also have the ability of heat conduction.
If any described previously, the edge of heat-conducting plate 172 is overlapped with the bottom edge of heat exchange platform 130.That is heat conduction
Plate 172 heat exchange platform, 130 base profiles are consistent.Wherein, heat-conducting plate 172 can be circular or square etc. cold beneficial to being evenly arranged
But the shape of water pipe 174.
Aqueous cold plate 170 is fixed on the bottom of heat exchange platform 130 by heat-conducting plate 172, it is to avoid inadvertently fallen off in cooling procedure,
Ensure radiating effect.Further, aqueous cold plate 170 and heat exchange platform 130 can be detachable assemblings, be convenient for changing aqueous cold plate
170。
Join Fig. 1 and Fig. 3, water filling port 1741 and delivery port 1743 are each perpendicular to the surface of heat-conducting plate 172, are easy to utilize pipeline
Supplied water and recycle-water.In one embodiment, crystal silicon ingot furnace also includes heat insulation bottom board 180, heat insulation bottom board 180 and heat-insulation cage
120 can close and form airtight chamber together.Water filling port 1741 and delivery port 1743 extend towards heat insulation bottom board 180 and through every
Hot bottom plate 180.So, water supply line can easily supply water beyond closing thermal field to cooling water pipe 174, water supply line
Can be in the inside flexible arrangement of body of heater 110.Certainly, water filling port 1741 and delivery port 1743 each may lie on heat insulation bottom board 180
Side.
In another embodiment, delivery port 1743 can also be the surface extension along heat-conducting plate 172, not influence recovery tube
The connection in road and delivery port 172.
Crystal silicon ingot furnace also includes water system and recovery system, and the two is arranged on outside body of heater 110.Wherein water system
Feed water inlet stretched into body of heater 110 and connected with the water filling port 1741 of cooling water pipe 174 by pipeline, and recovery system then passes through pipe
Road is recovered from the hot water of the outflow of delivery port 1743.
Further, water system also has volume control device, to control the reclaimed water of cooling water pipe 174 in the unit interval
Flow, so as to control the heat that aqueous cold plate 170 is taken away, to control the speed of long crystalline substance.
In addition, the liquid for flowing into cooling water pipe 174 can be water, such as running water, industrial reclaimed water.Can be cold with others
But medium, the coolant of such as chemical synthesis.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and it describes more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (8)
1. a kind of crystal silicon ingot furnace, it is characterised in that including：
Body of heater；
Heat-insulation cage, is arranged in body of heater；
Heat exchange platform, in heat-insulation cage, the top of heat exchange platform is to carry crucible；
Aqueous cold plate, including the heat-conducting plate contacted with the heat exchange platform bottom, the cooling that is in contact with the surface of the heat-conducting plate
Water pipe, wherein cooling water pipe are on the surface of the heat-conducting plate from the center of the heat-conducting plate to the periphery in the way of constant speed spiral
Extension, the water filling port of the cooling water pipe corresponds to the center of the heat-conducting plate, and delivery port is in the heat conduction plate surface
Projection close to heat-conducting plate edge, the center of the heat-conducting plate is corresponding with the heat exchange platform bottom centre, and the heat conduction
The edge of plate is overlapped with heat exchange platform bottom edge.
2. crystal silicon ingot furnace according to claim 1, it is characterised in that the water filling port and delivery port are each perpendicular to described
The surface of heat-conducting plate.
3. crystal silicon ingot furnace according to claim 2, it is characterised in that crystal silicon ingot furnace also includes heat insulation bottom board, heat-insulated
Bottom plate forms airtight chamber together with being closed with heat-insulation cage, and water filling port and delivery port extend and passed through towards the heat insulation bottom board
The heat insulation bottom board.
4. crystal silicon ingot furnace according to claim 1, it is characterised in that the heat-conducting plate is copper coin, the cooling water pipe
For copper pipe, the copper pipe is welded on the copper coin.
5. crystal silicon ingot furnace according to claim 1, it is characterised in that the heat-conducting plate is rounded or square.
6. crystal silicon ingot furnace according to claim 1, it is characterised in that also including water system and recovery system, described
The feed water inlet of water system is connected with the water filling port of the cooling water pipe, and the recovery system is to be recovered from delivery port outflow
Hot water.
7. crystal silicon ingot furnace according to claim 6, it is characterised in that the water system has volume control device,
Flow to control cooling water pipe reclaimed water in the unit interval.
8. crystal silicon ingot furnace according to claim 1, it is characterised in that the aqueous cold plate is fixed on by the heat-conducting plate
The bottom of the heat exchange platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720212243.0U CN206591201U (en) | 2017-03-06 | 2017-03-06 | Crystal silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720212243.0U CN206591201U (en) | 2017-03-06 | 2017-03-06 | Crystal silicon ingot furnace |
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| Publication Number | Publication Date |
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| CN206591201U true CN206591201U (en) | 2017-10-27 |
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| CN201720212243.0U Active CN206591201U (en) | 2017-03-06 | 2017-03-06 | Crystal silicon ingot furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110923804A (en) * | 2019-11-13 | 2020-03-27 | 苏州三原流体科技有限公司 | A lantern ring formula water-cooled tube for monocrystalline silicon growth furnace |
| CN111394791A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Cooling system for polycrystalline silicon ingot furnace and polycrystalline silicon ingot cooling method |
| CN113026101A (en) * | 2019-12-25 | 2021-06-25 | 苏州阿特斯阳光电力科技有限公司 | Method for producing quasi-single crystal silicon ingot and quasi-single crystal silicon ingot |
| CN114686962A (en) * | 2020-12-29 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Water-cooling structure and mono-like ingot casting equipment with same |
-
2017
- 2017-03-06 CN CN201720212243.0U patent/CN206591201U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110923804A (en) * | 2019-11-13 | 2020-03-27 | 苏州三原流体科技有限公司 | A lantern ring formula water-cooled tube for monocrystalline silicon growth furnace |
| CN113026101A (en) * | 2019-12-25 | 2021-06-25 | 苏州阿特斯阳光电力科技有限公司 | Method for producing quasi-single crystal silicon ingot and quasi-single crystal silicon ingot |
| CN111394791A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Cooling system for polycrystalline silicon ingot furnace and polycrystalline silicon ingot cooling method |
| CN114686962A (en) * | 2020-12-29 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Water-cooling structure and mono-like ingot casting equipment with same |
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