CN201942779U - Heat shield device applied to single crystal furnace - Google Patents
Heat shield device applied to single crystal furnace Download PDFInfo
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- CN201942779U CN201942779U CN2010206328820U CN201020632882U CN201942779U CN 201942779 U CN201942779 U CN 201942779U CN 2010206328820 U CN2010206328820 U CN 2010206328820U CN 201020632882 U CN201020632882 U CN 201020632882U CN 201942779 U CN201942779 U CN 201942779U
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- guide shell
- guide cylinder
- single crystal
- heat shielding
- crystal
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Abstract
The utility model discloses a heat shield device applied to a single crystal furnace. The heat shield device comprises a bracket, a first guide cylinder, a second guide cylinder and a third guide cylinder, wherein the bracket is arranged above a thermal insulation cover of the single crystal furnace; the first guide cylinder is in a frustum-shaped hollow structure, a first mounting edge extending outwards is arranged on the lower bottom surface of the first guide cylinder, a first clamping edge extending inwards is arranged on the upper bottom surface of the first guide cylinder, and the first mounting edge is matched with the bracket; the second guide cylinder is in the frustum-shaped hollow structure, a second mounting edge extending outwards is arranged on the lower bottom surface of the second guide cylinder, a second clamping edge extending inwards is arranged on the upper bottom surface of the second guide cylinder, and the second mounting edge is matched with the first clamping edge; and the third guide cylinder is in the frustum-shaped hollow structure, a third mounting edge extending outwards is arranged on the lower bottom surface of the third guide cylinder, and the third mounting edge is matched with the second clamping edge. The heat shield device has double functions of thermal insulation and gas stream guidance, thereby increasing the temperature gradient of a growth interface and crystal cooling speed, avoiding twisting and deformation of the crystal in the growth process and improving the crystal quality and yield.
Description
Technical field
The utility model relates to the semiconductor single crystal material preparation field, especially relates to a kind of heat shielding device that is applied in the single crystal growing furnace.
Background technology
N type high resistivity＜111〉crystal orientation silicon single-crystal are widely used in various power devices, because the segregation coefficient of its doped element phosphorus is little,＜111〉facet effect appears in the silicon single-crystal in crystal orientation easily in pulling process, the resistance that makes institute's pulling monocrystal is the resistivity evenness variation radially, it is low the resistivity center to occur, the phenomenon that the edge is high.Such silicon chip is when carrying out chemical corrosion and mechanical polishing, and difference can appear in the erosion rate of silicon chip each several part, thereby influences the performance and the quality of made device, reduces device yield.
＜111〉relevant with the shape at single crystal growing interface usually where facet appears at.When the interface was spill, facet appeared at the edge of silicon chip, then appeared at the centre of silicon chip when the interface is convex.If facet is the silicon chip central authorities that occur, then the resistivity value of silicon chip center is lower, and the silicon chip resistivity homogeneity is very poor.The factor of decision growth interface shape is a lot, but the thermal convection of molten silicon has a direct impact interface shape, thermal convection tends to make growth interface protruding in silicon melt, make facet appear at silicon chip central authorities, then tend to make growth interface recessed by the forced convection that Crystal Rotation produces to melt, make facet appear at silicon chip edge, thus the resistivity that changes N type＜111〉high resistivity monocrystalline homogeneity radially.
The high brilliant brilliant rotary speed that changes in the crystal pulling technique is an important parameters; When brilliant rotary speed is low, do not have the effect that improves resistivity evenness; Brilliant rotary speed is too high, can produce such as a series of problems such as crystal swings in the crystal pulling process again.Experiment shows that common brilliant rotary speed can obtain effect preferably when 22～25rpm.
On CG6000 type single crystal growing furnace, adopt conventional 14 inches systems to draw 4 inches＜111〉crystal orientation monocrystalline, the automatic seeding of monocrystalline, shouldering, isometrical all comparatively smooth when using high crystalline substance to change crystal pulling, but when single crystal growing is long to 100mm, begin to occur cold growth tendency, single crystal growing then is distorted when 250mm grows, torsional deformation is very serious when growing into 600mm length, has influenced the yield rate of monocrystalline.Its reason mainly is because hot system power is higher, causes the monocrystalline heat radiation bad, and the thermograde of growth interface is less.For guaranteeing the radially homogeneity of monocrystalline resistivity, the crystal rotating speed will reach more than the 22rpm usually, causes the solid-liquid interface too recessed to melt, also is a major reason in addition.
The utility model content
The utility model provides a kind of heat shielding device that is applied in the single crystal growing furnace, produces torsional deformation in order to solve in the prior art in the crystal growing process, influences the problem of crystal mass and yield rate.
For reaching above-mentioned purpose, the utility model provides a kind of heat shielding device that is applied in the single crystal growing furnace, and described heat shielding device comprises:
Support is arranged on above the stay-warm case of single crystal growing furnace;
First guide shell is shaped as the hollow structure of round platform, and the bottom surface of described first guide shell is outward extended with first the limit is installed, the upper bottom surface first clamping stagnation edge that extended internally; Described first installs the limit cooperates with described support;
Second guide shell is shaped as the hollow structure of round platform, and the bottom surface of described second guide shell is outward extended with second the limit is installed, the upper bottom surface second clamping stagnation edge that extended internally; Described second installs limit and described first clamping stagnation along cooperating;
The 3rd guide shell is shaped as the hollow structure of round platform, and the bottom surface of described the 3rd guide shell is outward extended with the 3rd the limit is installed; The described the 3rd installs limit and described second clamping stagnation along cooperating.
Further, described support comprises support tube and upper cover plate, and described support tube is arranged on the stay-warm case top of single crystal growing furnace, and described upper cover plate is arranged on the support tube top.
Further, described upper cover plate is provided with groove, and first clamping stagnation of described first guide shell is along being installed in the described groove.
Further, described support, first guide shell, second guide shell, the 3rd guide shell are made by graphite.
The utility model beneficial effect is as follows:
The utility model is applied in the heat shielding device in the single crystal growing furnace, dual function with insulation and gas flow guiding, strengthen the thermograde and the crystal radiating rate of growth interface, can effectively solve the torsional deformation situation that produces in the crystal growing process, improved crystal mass and yield rate; Simultaneously because the effective power when reduction material and crystal pulling of the introducing of heat shielding, energy efficient; And has advantage easy and simple to handle, quick and easy for installation.
Description of drawings
Fig. 1 is the existing structural representation that the single crystal growing furnace of heat shielding device is not installed;
Fig. 2 is the structural representation of a kind of heat shielding device of the utility model embodiment;
Fig. 3 is a kind of structural representation that the single crystal growing furnace of heat shielding device is installed of the utility model embodiment;
Fig. 4 is the front view of first guide shell of a kind of heat shielding device of the utility model embodiment;
Fig. 5 is the vertical view of Fig. 4;
Fig. 6 is the front view of second guide shell of a kind of heat shielding device of the utility model embodiment;
Fig. 7 is the vertical view of Fig. 6;
Fig. 8 is the front view of the 3rd guide shell of a kind of heat shielding device of the utility model embodiment;
Fig. 9 is the vertical view of Fig. 8;
Figure 10 is the front view of the support tube of a kind of heat shielding device of the utility model embodiment;
Figure 11 is the vertical view of Figure 10;
Figure 12 is the front view of the upper cover plate of a kind of heat shielding device of the utility model embodiment;
Figure 13 is the vertical view of Figure 12.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, does not limit the utility model.
Find through overtesting, the introducing of heat shielding can shield a part of well heater to the crystalline thermal radiation, the effect of brushing also obviously strengthens than open type thermal field argon gas stream to crystalline, thereby strengthened the crystalline heat radiation greatly, improved the thermograde of crystal growth interface, help the leveling crystal growth interface, thereby eliminate the phenomenon of crystal torsional deformation.
Shown in Fig. 1～13, the utility model embodiment relates to a kind of heat shielding device, comprising: support, first guide shell 5, second guide shell 6, the 3rd guide shell 7.
Support is arranged on above the stay-warm case of single crystal growing furnace, promptly is positioned at the top of single crystal growing furnace crystal pulling raw material;
First guide shell 5 is shaped as the hollow structure of round platform, and the bottom surface of first guide shell (the bigger face of area in the platform structure of garden) is outward extended with first the limit is installed, and upper bottom surface (the less face of area in the platform structure of garden) has extended internally the first clamping stagnation edge; First installs the limit cooperates with support.In the utility model, outwards be meant direction, inwardly be meant the direction of pointing to the round platform central axis away from the round platform central axis.The following indication of present embodiment outwards, inwardly, the implication expressed in bottom surface, upper bottom surface and first guide shell is identical.
The 3rd guide shell 7 is shaped as the hollow structure of round platform, and the bottom surface of the 3rd guide shell is outward extended with the 3rd the limit is installed; The 3rd installs limit and second clamping stagnation along cooperating.
Support comprises support tube 10 and upper cover plate 11, and support tube 10 is arranged on the stay-warm case top of single crystal growing furnace, and upper cover plate 11 is arranged on support tube 10 tops.Upper cover plate 11 is provided with groove, and first clamping stagnation of first guide shell 5 can prevent the heat shielding slip along being installed in the groove.
Support, first guide shell 5, second guide shell 6, the 3rd guide shell 7 are made by graphite.
This heat shielding Unit Installation is very easy, helps the replacing and the maintenance of each parts, and concrete installation process is as follows:
As former common open type thermal field, pack into earlier plumbago crucible 8 and quartz crucible 9, in quartz crucible 9, put into the crystal pulling raw material, quartz crucible 9 is reduced to correct position, place support tube 10, upper cover plate 11, first guide shell 5 and second guide shell 6 successively, should note the distance of the raw material and second guide shell 6 this moment, and according to this distance, revise quartz crucible 9 travel settings in the single crystal growing furnace automatization material program, raw material contacts with second guide shell 6 in the avoiding material way, causes contamination.Close bell 4, in secondary furnace chamber 2, use the hoisting mechanism (can hook block the 3rd guide shell 7, and after guide shell is supported, automatically and its disengaging, because of not belonging to the heat shielding device of present embodiment, so do not elaborate) the 3rd guide shell 7 is placed in the secondary furnace chamber 2, close fire door.Begin to find time and change the material program, after raw material all melts, by shift mechanism 1 decline wireline 3, the 3rd guide shell 7 is fallen, be combined into complete heat shielding with first guide shell 5 and second guide shell 6 and (notice that should descend quartz crucible 9 positions earlier this moment, to avoid melt to contact) with heat shielding, promote hoisting mechanism to secondary furnace chamber 2 by shift mechanism 1, close segregaion valve, unload hoisting mechanism, the seed crystal that changes the outfit carries out the program of finding time of secondary furnace chamber, open segregaion valve, promptly can carry out normal crystal pulling program.
In the single crystal growing furnace, heat shielding is a major parts, has played the dual function of insulation and gas flow guiding, has strengthened the thermograde and the crystal radiating rate of growth interface.Support tube mainly plays a supportive role, and can further strengthen heat insulation effect; Upper cover plate has been strengthened the insulation of thermal field upper part.
The use of this device need not to change the former thermal field of CG6000 type single crystal growing furnace, and is quick and easy for installation.After this device used, the air guide of heat shielding and insulation effect had reduced in the crystal-pulling process well heater and have strengthened the heat reflection to melt for the crystalline thermal radiation, and the effect of brushing obviously strengthens than common open type thermal field argon gas stream to crystalline simultaneously.Consequently crystal heat radiation is accelerated, and the growth interface thermograde improves, and the leveling of favourable crystal growth interface can effectively solve and occurs the torsional deformation phenomenon in the crystal growing process, improves crystal mass and yield rate.Simultaneously because the effective power when reduction material and crystal pulling of the introducing of heat shielding, energy efficient.And by changing the 3rd section guide shell, can on former thermal field, draw the monocrystalline of different diameter, easy and simple to handle.
By using this heat shielding device, the crystal pulling technique that cooperates Gao Jingzhuan, the resistivity of N type high resistant＜111〉crystal orientation monocrystalline radially homogeneity has obtained control preferably, table 1 is for using the uniform resistivity implementations of this heat shielding device pulled crystal, and the torsional deformation situation better and does not all appear in monocrystalline resistivity radially homogeneity.
Table 1
Annotate: radially the calculating of resistivity ununiformity is by following two kinds of methods
Method 1:
Method 2:
Adopt the heat shielding device of the utility model embodiment design, by cooperating the body of heater size that the placement height and the physical dimension of heat shielding device are designed accurately, can guarantee not the CCD shooting and the scanning of single crystal growing furnace crystal diameter Controlling System are impacted, can not influence the automatic control of crystal growth, not only can satisfy ccd video camera monitoring to single crystal diameter in the crystal pulling whole process, and manually also can from the seeding to the ending, monocrystalline be observed and measure.After 14 inches thermal field single crystal growing furnaces add this device, not only the monocrystalline profile be improved significantly, and crystal pulling power also reduced, monocrystalline crystal pulling power consumption significantly reduces.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (4)
1. a heat shielding device that is applied in the single crystal growing furnace is characterized in that, described heat shielding device comprises:
Support is arranged on above the stay-warm case of single crystal growing furnace;
First guide shell is shaped as the hollow structure of round platform, and the bottom surface of described first guide shell is outward extended with first the limit is installed, the upper bottom surface first clamping stagnation edge that extended internally; Described first installs the limit cooperates with described support;
Second guide shell is shaped as the hollow structure of round platform, and the bottom surface of described second guide shell is outward extended with second the limit is installed, the upper bottom surface second clamping stagnation edge that extended internally; Described second installs limit and described first clamping stagnation along cooperating;
The 3rd guide shell is shaped as the hollow structure of round platform, and the bottom surface of described the 3rd guide shell is outward extended with the 3rd the limit is installed; The described the 3rd installs limit and described second clamping stagnation along cooperating.
2. the heat shielding device that is applied in the single crystal growing furnace as claimed in claim 1 is characterized in that described support comprises support tube and upper cover plate, and described support tube is arranged on the stay-warm case top of single crystal growing furnace, and described upper cover plate is arranged on the support tube top.
3. the heat shielding device that is applied in the single crystal growing furnace as claimed in claim 2 is characterized in that described upper cover plate is provided with groove, and first clamping stagnation of described first guide shell is along being installed in the described groove.
4. the heat shielding device that is applied in the single crystal growing furnace as claimed in claim 2 is characterized in that described support, first guide shell, second guide shell, the 3rd guide shell are made by graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206328820U CN201942779U (en) | 2010-11-30 | 2010-11-30 | Heat shield device applied to single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206328820U CN201942779U (en) | 2010-11-30 | 2010-11-30 | Heat shield device applied to single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201942779U true CN201942779U (en) | 2011-08-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2010206328820U Expired - Lifetime CN201942779U (en) | 2010-11-30 | 2010-11-30 | Heat shield device applied to single crystal furnace |
Country Status (1)
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| CN (1) | CN201942779U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215637A (en) * | 2012-01-19 | 2013-07-24 | 宁夏日晶新能源装备股份有限公司 | Mono-crystalline furnace thermal field having support ring |
| CN111321457A (en) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | Split type draft tube |
| TWI749560B (en) * | 2019-06-18 | 2021-12-11 | 大陸商上海新昇半導體科技有限公司 | A semiconductor crystal growth apparatus |
-
2010
- 2010-11-30 CN CN2010206328820U patent/CN201942779U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215637A (en) * | 2012-01-19 | 2013-07-24 | 宁夏日晶新能源装备股份有限公司 | Mono-crystalline furnace thermal field having support ring |
| CN111321457A (en) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | Split type draft tube |
| TWI749560B (en) * | 2019-06-18 | 2021-12-11 | 大陸商上海新昇半導體科技有限公司 | A semiconductor crystal growth apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Tianjing Jinming Electronic Material LLC Assignor: China Electronics Science & Technology Group The 46th Institute Contract record no.: 2014120000118 Denomination of utility model: Heat shield device applied to single crystal furnace Granted publication date: 20110824 License type: Exclusive License Record date: 20141226 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110824 |