CN1811985A - 存储器装置 - Google Patents
存储器装置 Download PDFInfo
- Publication number
- CN1811985A CN1811985A CNA2006100050858A CN200610005085A CN1811985A CN 1811985 A CN1811985 A CN 1811985A CN A2006100050858 A CNA2006100050858 A CN A2006100050858A CN 200610005085 A CN200610005085 A CN 200610005085A CN 1811985 A CN1811985 A CN 1811985A
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- China
- Prior art keywords
- state
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- memory cell
- storage arrangement
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4061—Calibration or ate or cycle tuning
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005011626A JP4282612B2 (ja) | 2005-01-19 | 2005-01-19 | メモリ装置及びそのリフレッシュ方法 |
JP2005011626 | 2005-01-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1811985A true CN1811985A (zh) | 2006-08-02 |
CN100530423C CN100530423C (zh) | 2009-08-19 |
Family
ID=36683718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100050858A Expired - Fee Related CN100530423C (zh) | 2005-01-19 | 2006-01-17 | 存储器装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US20060158948A1 (zh) |
JP (1) | JP4282612B2 (zh) |
CN (1) | CN100530423C (zh) |
DE (1) | DE102006000618A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101828234A (zh) * | 2007-10-17 | 2010-09-08 | 株式会社东芝 | 信息处理*** |
CN101958146A (zh) * | 2009-07-15 | 2011-01-26 | 旺宏电子股份有限公司 | 一种存储器装置及其操作方法 |
CN101159164B (zh) * | 2006-10-06 | 2011-11-16 | 奇梦达股份公司 | 半导体器件、存储器、以及操作存储器的方法 |
CN101188141B (zh) * | 2006-11-22 | 2012-04-04 | 奇梦达股份公司 | 包括刷新操作的电阻式存储器及其刷新方法 |
CN101266834B (zh) * | 2007-03-15 | 2012-07-04 | 西格斯教育资本有限责任公司 | 相变存储器的驱动方法与*** |
CN103440880A (zh) * | 2013-09-03 | 2013-12-11 | 苏州宽温电子科技有限公司 | 一种sram存储器以及位单元追踪方法 |
CN104115230A (zh) * | 2011-12-22 | 2014-10-22 | 英特尔公司 | 高效pcms刷新机制背景 |
CN107230495A (zh) * | 2016-03-25 | 2017-10-03 | 瑞萨电子株式会社 | 半导体存储器装置 |
CN107845400A (zh) * | 2016-09-19 | 2018-03-27 | 爱思开海力士有限公司 | 阻变存储装置及用于操作其的电路和方法 |
CN114783485A (zh) * | 2022-06-21 | 2022-07-22 | 阿里云计算有限公司 | 用于刷新相变存储器的方法及相变存储设备 |
Families Citing this family (66)
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JP4282612B2 (ja) * | 2005-01-19 | 2009-06-24 | エルピーダメモリ株式会社 | メモリ装置及びそのリフレッシュ方法 |
US20070279975A1 (en) * | 2006-06-06 | 2007-12-06 | Hudgens Stephen J | Refreshing a phase change memory |
US7405964B2 (en) * | 2006-07-27 | 2008-07-29 | Qimonda North America Corp. | Integrated circuit to identify read disturb condition in memory cell |
JP2008071384A (ja) | 2006-09-12 | 2008-03-27 | Elpida Memory Inc | 半導体記憶装置 |
KR100819106B1 (ko) * | 2006-09-27 | 2008-04-02 | 삼성전자주식회사 | 상변화 메모리 장치에서의 라이트 동작방법 |
WO2008041278A1 (fr) * | 2006-09-29 | 2008-04-10 | Renesas Technology Corp. | Dispositif semi-conducteur |
US7679980B2 (en) * | 2006-11-21 | 2010-03-16 | Qimonda North America Corp. | Resistive memory including selective refresh operation |
US7474579B2 (en) * | 2006-12-20 | 2009-01-06 | Spansion Llc | Use of periodic refresh in medium retention memory arrays |
US8164941B2 (en) * | 2006-12-27 | 2012-04-24 | Hynix Semiconductor Inc. | Semiconductor memory device with ferroelectric device and refresh method thereof |
KR100850290B1 (ko) * | 2007-01-11 | 2008-08-04 | 삼성전자주식회사 | 멀티레벨 바이어스 전압 발생기 및 이를 구비하는 반도체메모리 장치 |
US7548467B2 (en) * | 2006-12-28 | 2009-06-16 | Samsung Electronics Co., Ltd. | Bias voltage generator and method generating bias voltage for semiconductor memory device |
TWI320180B (en) * | 2007-01-12 | 2010-02-01 | A driving method and a driving system for writing the phase change memory | |
JP2008181380A (ja) * | 2007-01-25 | 2008-08-07 | Toshiba Corp | メモリシステムおよびその制御方法 |
KR100887138B1 (ko) * | 2007-08-10 | 2009-03-04 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 구동 방법 |
US8767450B2 (en) | 2007-08-21 | 2014-07-01 | Samsung Electronics Co., Ltd. | Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same |
KR20090086816A (ko) | 2008-02-11 | 2009-08-14 | 삼성전자주식회사 | 상변화 메모리 장치, 그것의 기록 방법, 그리고 그것을포함하는 시스템 |
US7961534B2 (en) * | 2007-09-10 | 2011-06-14 | Hynix Semiconductor Inc. | Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof |
US7675792B2 (en) * | 2007-09-26 | 2010-03-09 | Intel Corporation | Generating reference currents compensated for process variation in non-volatile memories |
JP2009087509A (ja) * | 2007-10-03 | 2009-04-23 | Toshiba Corp | 半導体記憶装置 |
US20090046499A1 (en) * | 2008-02-05 | 2009-02-19 | Qimonda Ag | Integrated circuit including memory having limited read |
KR20100064714A (ko) | 2008-12-05 | 2010-06-15 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
CN102084429B (zh) * | 2009-04-10 | 2013-12-25 | 松下电器产业株式会社 | 非易失性存储元件的驱动方法和非易失性存储装置 |
US8031518B2 (en) | 2009-06-08 | 2011-10-04 | Micron Technology, Inc. | Methods, structures, and devices for reducing operational energy in phase change memory |
US8406033B2 (en) | 2009-06-22 | 2013-03-26 | Macronix International Co., Ltd. | Memory device and method for sensing and fixing margin cells |
US8984572B2 (en) | 2009-07-24 | 2015-03-17 | Koninklijke Philips N.V. | Method and system for transmitting channels to at least one digital video recorder |
US9135277B2 (en) | 2009-08-07 | 2015-09-15 | Google Inc. | Architecture for responding to a visual query |
US8351289B1 (en) | 2009-12-30 | 2013-01-08 | Micron Technology, Inc. | Apparatuses and methods for sensing a phase-change test cell and determining changes to the test cell resistance due to thermal exposure |
DE112009005490T5 (de) | 2009-12-31 | 2013-01-24 | Micron Technology, Inc. | Verfahren für eine Phasenwechselspeichermatrix |
US8634235B2 (en) | 2010-06-25 | 2014-01-21 | Macronix International Co., Ltd. | Phase change memory coding |
JPWO2012039415A1 (ja) | 2010-09-21 | 2014-02-03 | 日本電気株式会社 | 半導体装置およびその制御方法 |
US8467238B2 (en) | 2010-11-15 | 2013-06-18 | Macronix International Co., Ltd. | Dynamic pulse operation for phase change memory |
US8374019B2 (en) | 2011-01-05 | 2013-02-12 | Macronix International Co., Ltd. | Phase change memory with fast write characteristics |
US9299424B2 (en) | 2011-03-02 | 2016-03-29 | Nec Corporation | Reconfigurable circuit and method for refreshing reconfigurable circuit |
US9324433B2 (en) * | 2011-04-25 | 2016-04-26 | Microsoft Technology Licensing, Llc | Intelligent flash reprogramming |
US8891293B2 (en) | 2011-06-23 | 2014-11-18 | Macronix International Co., Ltd. | High-endurance phase change memory devices and methods for operating the same |
JP5763004B2 (ja) * | 2012-03-26 | 2015-08-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US20130336047A1 (en) * | 2012-04-24 | 2013-12-19 | Being Advanced Memory Corporation | Cell Refresh in Phase Change Memory |
US9001550B2 (en) | 2012-04-27 | 2015-04-07 | Macronix International Co., Ltd. | Blocking current leakage in a memory array |
KR20140026889A (ko) * | 2012-08-23 | 2014-03-06 | 삼성전자주식회사 | 선택적으로 리프레쉬를 수행하는 저항성 메모리 장치 및 저항성 메모리장치의 리프레쉬 방법 |
US8957700B2 (en) * | 2012-09-28 | 2015-02-17 | Analog Devices, Inc. | Apparatus and methods for digital configuration of integrated circuits |
US11037625B2 (en) | 2012-11-20 | 2021-06-15 | Thstyme Bermuda Limited | Solid state drive architectures |
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KR20140080945A (ko) * | 2012-12-21 | 2014-07-01 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 |
KR102055375B1 (ko) * | 2013-01-14 | 2020-01-22 | 삼성전자 주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템 |
US8964442B2 (en) | 2013-01-14 | 2015-02-24 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US9384801B2 (en) * | 2014-08-15 | 2016-07-05 | Intel Corporation | Threshold voltage expansion |
US9595354B2 (en) * | 2014-12-15 | 2017-03-14 | Infineon Technologies Ag | Nonvolatile memory refresh |
US10438658B2 (en) * | 2014-12-26 | 2019-10-08 | Intel Corporation | Refresh logic to refresh only memory cells having a first value |
US20160306569A1 (en) * | 2015-02-25 | 2016-10-20 | Kabushiki Kaisha Toshiba | Memory system |
US9472274B1 (en) * | 2015-07-01 | 2016-10-18 | Macronix International Co., Ltd. | Refresh of nonvolatile memory cells and reference cells with resistance drift |
JP2017021877A (ja) * | 2015-07-13 | 2017-01-26 | ソニー株式会社 | 不揮発メモリ、メモリコントローラ、記憶装置、情報処理システムおよび不揮発メモリの制御方法 |
CN105023606B (zh) * | 2015-08-14 | 2018-06-26 | 中国科学院上海微***与信息技术研究所 | 一种相变存储器及其恢复数据的方法 |
US9779810B2 (en) | 2015-09-11 | 2017-10-03 | Macronix International Co., Ltd. | Adjustable writing circuit |
KR102373544B1 (ko) | 2015-11-06 | 2022-03-11 | 삼성전자주식회사 | 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법 |
CN105810242A (zh) * | 2016-03-02 | 2016-07-27 | 中国科学院上海微***与信息技术研究所 | 一种相变存储器和提高其疲劳寿命的操作方法 |
CN105931665B (zh) * | 2016-04-19 | 2020-06-09 | 中国科学院上海微***与信息技术研究所 | 一种相变存储器读出电路及方法 |
US10147475B1 (en) * | 2017-05-09 | 2018-12-04 | Micron Technology, Inc. | Refresh in memory based on a set margin |
US10319437B2 (en) * | 2017-09-20 | 2019-06-11 | Sandisk Technologies Llc | Apparatus and method for identifying memory cells for data refresh based on monitor cell in a resistive memory device |
US10706920B2 (en) | 2017-11-02 | 2020-07-07 | Samsung Electronics Co., Ltd. | Memory device |
CN108878646A (zh) * | 2018-06-28 | 2018-11-23 | 北京大学 | 一种阻变器件多级稳定阻态实现方法及电子设备 |
US11055226B2 (en) * | 2018-06-29 | 2021-07-06 | Intel Corporation | Mitigation of cache-latency based side-channel attacks |
JP2020149736A (ja) * | 2019-03-11 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
US10943657B1 (en) | 2019-08-19 | 2021-03-09 | Micron Technology, Inc. | Mitigation of voltage threshold drift associated with power down condition of non-volatile memory device |
US11139016B1 (en) * | 2020-04-07 | 2021-10-05 | Micron Technology, Inc. | Read refresh operation |
US11404120B2 (en) * | 2020-05-13 | 2022-08-02 | Micron Technology, Inc. | Refresh operation of a memory cell |
US11538522B1 (en) * | 2021-06-30 | 2022-12-27 | Micron Technology, Inc. | Systems and methods for adaptive self-referenced reads of memory devices |
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US5270967A (en) | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
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JP3866511B2 (ja) | 2000-12-22 | 2007-01-10 | 東芝マイクロエレクトロニクス株式会社 | 不揮発性メモリ |
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JP2003141873A (ja) | 2001-11-05 | 2003-05-16 | Toshiba Corp | 磁気記憶装置 |
JP2004062922A (ja) * | 2002-07-25 | 2004-02-26 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US6768665B2 (en) * | 2002-08-05 | 2004-07-27 | Intel Corporation | Refreshing memory cells of a phase change material memory device |
JP4134637B2 (ja) | 2002-08-27 | 2008-08-20 | 株式会社日立製作所 | 半導体装置 |
JP4129170B2 (ja) | 2002-12-05 | 2008-08-06 | シャープ株式会社 | 半導体記憶装置及びメモリセルの記憶データ補正方法 |
JP4256175B2 (ja) * | 2003-02-04 | 2009-04-22 | 株式会社東芝 | 不揮発性半導体メモリ |
JP2004348802A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 不揮発性メモリ素子のプログラム検証方法および半導体記憶装置とそれを備えた携帯電子機器 |
US7085154B2 (en) | 2003-06-03 | 2006-08-01 | Samsung Electronics Co., Ltd. | Device and method for pulse width control in a phase change memory device |
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JP4322645B2 (ja) * | 2003-11-28 | 2009-09-02 | 株式会社日立製作所 | 半導体集積回路装置 |
US20060056251A1 (en) * | 2004-09-10 | 2006-03-16 | Parkinson Ward D | Using a phase change memory as a replacement for a dynamic random access memory |
JP4282612B2 (ja) * | 2005-01-19 | 2009-06-24 | エルピーダメモリ株式会社 | メモリ装置及びそのリフレッシュ方法 |
-
2005
- 2005-01-19 JP JP2005011626A patent/JP4282612B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-02 DE DE102006000618A patent/DE102006000618A1/de not_active Withdrawn
- 2006-01-17 CN CNB2006100050858A patent/CN100530423C/zh not_active Expired - Fee Related
- 2006-01-18 US US11/333,344 patent/US20060158948A1/en not_active Abandoned
-
2008
- 2008-09-09 US US12/207,077 patent/US7580277B2/en not_active Expired - Fee Related
-
2009
- 2009-07-10 US US12/500,673 patent/US7751227B2/en not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101159164B (zh) * | 2006-10-06 | 2011-11-16 | 奇梦达股份公司 | 半导体器件、存储器、以及操作存储器的方法 |
CN101188141B (zh) * | 2006-11-22 | 2012-04-04 | 奇梦达股份公司 | 包括刷新操作的电阻式存储器及其刷新方法 |
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JP2006202383A (ja) | 2006-08-03 |
US20060158948A1 (en) | 2006-07-20 |
US20090010048A1 (en) | 2009-01-08 |
US20090273970A1 (en) | 2009-11-05 |
JP4282612B2 (ja) | 2009-06-24 |
CN100530423C (zh) | 2009-08-19 |
US7580277B2 (en) | 2009-08-25 |
DE102006000618A1 (de) | 2006-08-17 |
US7751227B2 (en) | 2010-07-06 |
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