CN1674268A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1674268A CN1674268A CNA2005100082591A CN200510008259A CN1674268A CN 1674268 A CN1674268 A CN 1674268A CN A2005100082591 A CNA2005100082591 A CN A2005100082591A CN 200510008259 A CN200510008259 A CN 200510008259A CN 1674268 A CN1674268 A CN 1674268A
- Authority
- CN
- China
- Prior art keywords
- lead
- contact pin
- overhang
- wire
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 210
- 239000011347 resin Substances 0.000 claims abstract description 37
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 39
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 238000005520 cutting process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 5
- 230000008719 thickening Effects 0.000 claims 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 241000283216 Phocidae Species 0.000 description 61
- 230000008569 process Effects 0.000 description 15
- 238000005538 encapsulation Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 7
- 238000007634 remodeling Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000006071 cream Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000009747 press moulding Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02B—HYDRAULIC ENGINEERING
- E02B3/00—Engineering works in connection with control or use of streams, rivers, coasts, or other marine sites; Sealings or joints for engineering works in general
- E02B3/04—Structures or apparatus for, or methods of, protecting banks, coasts, or harbours
- E02B3/12—Revetment of banks, dams, watercourses, or the like, e.g. the sea-floor
- E02B3/14—Preformed blocks or slabs for forming essentially continuous surfaces; Arrangements thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
- A01K61/00—Culture of aquatic animals
- A01K61/10—Culture of aquatic animals of fish
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geometry (AREA)
- Environmental Sciences (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Mechanical Engineering (AREA)
- Marine Sciences & Fisheries (AREA)
- Zoology (AREA)
- Animal Husbandry (AREA)
- Biodiversity & Conservation Biology (AREA)
- Ocean & Marine Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004084170A JP4417150B2 (ja) | 2004-03-23 | 2004-03-23 | 半導体装置 |
JP2004084170 | 2004-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1674268A true CN1674268A (zh) | 2005-09-28 |
CN100466241C CN100466241C (zh) | 2009-03-04 |
Family
ID=34988807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100082591A Expired - Fee Related CN100466241C (zh) | 2004-03-23 | 2005-02-07 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7176557B2 (zh) |
JP (1) | JP4417150B2 (zh) |
KR (1) | KR101103871B1 (zh) |
CN (1) | CN100466241C (zh) |
TW (2) | TW200536088A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101071810B (zh) * | 2006-05-12 | 2010-12-22 | 瑞萨电子株式会社 | 半导体器件 |
CN102169866A (zh) * | 2010-02-26 | 2011-08-31 | 瑞萨电子株式会社 | 半导体器件和制造半导体器件的方法 |
CN102751205A (zh) * | 2011-04-21 | 2012-10-24 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN103426781A (zh) * | 2012-05-23 | 2013-12-04 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
US9443794B2 (en) | 2011-12-01 | 2016-09-13 | Renesas Electronics Corporation | Semiconductor device |
CN107644854A (zh) * | 2010-07-12 | 2018-01-30 | 美国亚德诺半导体公司 | 用于集成电路封装的设备 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4372508B2 (ja) * | 2003-10-06 | 2009-11-25 | ローム株式会社 | リードフレームの製造方法およびそれを用いた半導体装置の製造方法、ならびに半導体装置ならびにそれを備えた携帯機器および電子装置 |
JP2008071927A (ja) * | 2006-09-14 | 2008-03-27 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP5180495B2 (ja) | 2007-03-14 | 2013-04-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7847376B2 (en) * | 2007-07-19 | 2010-12-07 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
JP5155644B2 (ja) * | 2007-07-19 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7851897B1 (en) * | 2008-06-16 | 2010-12-14 | Maxim Integrated Products, Inc. | IC package structures for high power dissipation and low RDSon |
JP5549066B2 (ja) * | 2008-09-30 | 2014-07-16 | 凸版印刷株式会社 | リードフレーム型基板とその製造方法、及び半導体装置 |
JP2010258159A (ja) * | 2009-04-23 | 2010-11-11 | Renesas Electronics Corp | 半導体装置 |
JP5380244B2 (ja) * | 2009-10-22 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5204271B2 (ja) * | 2011-06-16 | 2013-06-05 | 株式会社東芝 | 内視鏡装置および基板 |
JP2013093483A (ja) * | 2011-10-27 | 2013-05-16 | Semiconductor Components Industries Llc | 半導体装置及びその製造方法 |
JP5817513B2 (ja) * | 2011-12-27 | 2015-11-18 | 大日本印刷株式会社 | 半導体装置製造用リードフレーム及び半導体装置の製造方法 |
JP6011083B2 (ja) * | 2012-07-09 | 2016-10-19 | 日亜化学工業株式会社 | 発光装置用リードフレームおよびその製造方法ならびに発光装置の製造方法 |
TWI570858B (zh) * | 2014-12-23 | 2017-02-11 | 揚智科技股份有限公司 | 半導體封裝結構 |
US10083888B2 (en) * | 2015-11-19 | 2018-09-25 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package |
US9847283B1 (en) * | 2016-11-06 | 2017-12-19 | Nexperia B.V. | Semiconductor device with wettable corner leads |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2888183B2 (ja) * | 1995-11-13 | 1999-05-10 | ヤマハ株式会社 | 樹脂封止型半導体装置 |
US6909179B2 (en) * | 1996-03-18 | 2005-06-21 | Renesas Technology Corp. | Lead frame and semiconductor device using the lead frame and method of manufacturing the same |
US5936837A (en) * | 1997-08-11 | 1999-08-10 | Motorola, Inc. | Semiconductor component having leadframe with offset ground plane |
JP2000236060A (ja) * | 1999-02-16 | 2000-08-29 | Matsushita Electronics Industry Corp | 半導体装置 |
MY133357A (en) * | 1999-06-30 | 2007-11-30 | Hitachi Ltd | A semiconductor device and a method of manufacturing the same |
JP2001230360A (ja) * | 2000-02-18 | 2001-08-24 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3786339B2 (ja) * | 2000-03-23 | 2006-06-14 | 株式会社三井ハイテック | 半導体装置の製造方法 |
JP3640601B2 (ja) | 2000-07-11 | 2005-04-20 | セントラル硝子株式会社 | フッ素含有化合物ガスの検出方法 |
TW508774B (en) * | 2000-09-15 | 2002-11-01 | Samsung Techwin Co Ltd | Lead frame, semiconductor package having the same, method of manufacturing semiconductor package, molding plates and molding machine for manufacturing semiconductor package |
JP2002184927A (ja) * | 2000-12-19 | 2002-06-28 | Mitsui High Tec Inc | 半導体装置の製造方法 |
JP2004022725A (ja) * | 2002-06-14 | 2004-01-22 | Renesas Technology Corp | 半導体装置 |
JP4149439B2 (ja) * | 2002-07-01 | 2008-09-10 | 株式会社ルネサステクノロジ | 半導体装置 |
-
2004
- 2004-03-23 JP JP2004084170A patent/JP4417150B2/ja not_active Expired - Lifetime
-
2005
- 2005-01-21 US US11/038,070 patent/US7176557B2/en active Active
- 2005-01-24 TW TW094102022A patent/TW200536088A/zh not_active IP Right Cessation
- 2005-01-24 TW TW100129842A patent/TWI505418B/zh active
- 2005-02-07 CN CNB2005100082591A patent/CN100466241C/zh not_active Expired - Fee Related
- 2005-02-14 KR KR1020050011833A patent/KR101103871B1/ko active IP Right Grant
-
2007
- 2007-01-16 US US11/653,402 patent/US7339261B2/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101071810B (zh) * | 2006-05-12 | 2010-12-22 | 瑞萨电子株式会社 | 半导体器件 |
CN102169866A (zh) * | 2010-02-26 | 2011-08-31 | 瑞萨电子株式会社 | 半导体器件和制造半导体器件的方法 |
CN107644854A (zh) * | 2010-07-12 | 2018-01-30 | 美国亚德诺半导体公司 | 用于集成电路封装的设备 |
CN102751205A (zh) * | 2011-04-21 | 2012-10-24 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
US9443794B2 (en) | 2011-12-01 | 2016-09-13 | Renesas Electronics Corporation | Semiconductor device |
CN103137592B (zh) * | 2011-12-01 | 2017-09-05 | 瑞萨电子株式会社 | 半导体器件 |
CN103426781A (zh) * | 2012-05-23 | 2013-12-04 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
CN103426781B (zh) * | 2012-05-23 | 2017-08-25 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005276890A (ja) | 2005-10-06 |
TW200536088A (en) | 2005-11-01 |
US7339261B2 (en) | 2008-03-04 |
JP4417150B2 (ja) | 2010-02-17 |
US7176557B2 (en) | 2007-02-13 |
TW201222744A (en) | 2012-06-01 |
CN100466241C (zh) | 2009-03-04 |
US20050212116A1 (en) | 2005-09-29 |
TWI505418B (zh) | 2015-10-21 |
TWI359484B (zh) | 2012-03-01 |
KR101103871B1 (ko) | 2012-01-12 |
KR20060041909A (ko) | 2006-05-12 |
US20070108563A1 (en) | 2007-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1674268A (zh) | 半导体器件 | |
CN1163963C (zh) | 引线架及树脂封装型半导体器件的制造方法 | |
CN1198332C (zh) | 布线基片、半导体器件和布线基片的制造方法 | |
CN1499623A (zh) | 引线框架、树脂密封型半导体装置及其制造方法 | |
CN1512574A (zh) | 半导体器件及其制造方法 | |
CN1219322C (zh) | 树脂密封型半导体装置及其制造方法 | |
CN1207585A (zh) | 半导体装置及半导体装置的引线框架 | |
CN1381886A (zh) | 半导体器件和封装及其制造方法 | |
US20080305586A1 (en) | Method of manuacturing a semiconductor device | |
CN1581474A (zh) | 无引线型半导体封装及其制造方法 | |
CN1123469A (zh) | 半导体器件 | |
CN1672269A (zh) | 半导体发光装置及其制法和半导体发光装置用反射器 | |
CN1862797A (zh) | 引线框架及树脂密封型半导体器件 | |
CN1156910C (zh) | 引线框、使用该引线框的半导体器件及其制造方法 | |
CN1424757A (zh) | 半导体器件及其制造方法 | |
CN1441472A (zh) | 半导体装置及其制造方法、电路板和电子仪器 | |
CN1227734C (zh) | 半导体器件 | |
CN1160781C (zh) | 分立半导体器件及其制造方法 | |
CN1204622C (zh) | 半导体器件及其制造方法 | |
CN1368760A (zh) | 半导体设备 | |
CN1755907A (zh) | 半导体器件的制造方法 | |
CN1457094A (zh) | 半导体器件及其制造方法 | |
CN1659698A (zh) | 包括半导体器件的四方扁平无引线封装 | |
CN1591853A (zh) | 无引线型半导体封装及其制作工艺 | |
CN1652314A (zh) | 引线框架、半导体芯片封装、及该封装的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC CORP. Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100716 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: NEC CORP. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN COUNTY |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: NEC ELECTRONICS Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100716 Address after: Kanagawa, Japan Patentee after: NEC ELECTRONICS Corp. Address before: Tokyo, Japan Patentee before: Renesas Technology Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090304 Termination date: 20190207 |