CN1534869A - 表面声波器件及其制造方法 - Google Patents
表面声波器件及其制造方法 Download PDFInfo
- Publication number
- CN1534869A CN1534869A CNA2004100342113A CN200410034211A CN1534869A CN 1534869 A CN1534869 A CN 1534869A CN A2004100342113 A CNA2004100342113 A CN A2004100342113A CN 200410034211 A CN200410034211 A CN 200410034211A CN 1534869 A CN1534869 A CN 1534869A
- Authority
- CN
- China
- Prior art keywords
- substrate
- film
- acoustic wave
- wave device
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 205
- 238000001994 activation Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000010931 gold Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005304 joining Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
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- 238000005520 cutting process Methods 0.000 description 4
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- 239000011261 inert gas Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- -1 pottery Chemical compound 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B5/00—Doors, windows, or like closures for special purposes; Border constructions therefor
- E06B5/10—Doors, windows, or like closures for special purposes; Border constructions therefor for protection against air-raid or other war-like action; for other protective purposes
- E06B5/16—Fireproof doors or similar closures; Adaptations of fixed constructions therefor
-
- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62C—FIRE-FIGHTING
- A62C2/00—Fire prevention or containment
- A62C2/06—Physical fire-barriers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/0585—Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Engineering & Computer Science (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP096577/2003 | 2003-03-31 | ||
JP2003096577A JP2004304622A (ja) | 2003-03-31 | 2003-03-31 | 弾性表面波デバイス及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1534869A true CN1534869A (zh) | 2004-10-06 |
CN100433551C CN100433551C (zh) | 2008-11-12 |
Family
ID=32959547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100342113A Expired - Lifetime CN100433551C (zh) | 2003-03-31 | 2004-03-30 | 表面声波器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7227429B2 (zh) |
EP (1) | EP1471635B1 (zh) |
JP (1) | JP2004304622A (zh) |
KR (1) | KR100788110B1 (zh) |
CN (1) | CN100433551C (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105810590A (zh) * | 2016-03-18 | 2016-07-27 | 中国电子科技集团公司第二十六研究所 | 声表面波滤波器晶圆键合封装工艺 |
CN108246593A (zh) * | 2016-12-28 | 2018-07-06 | 意法半导体股份有限公司 | 压电式微加工超声换能器及其制造方法 |
CN108313974A (zh) * | 2018-02-07 | 2018-07-24 | 宜确半导体(苏州)有限公司 | 声学设备及其晶圆级封装方法 |
CN108321123A (zh) * | 2018-02-07 | 2018-07-24 | 宜确半导体(苏州)有限公司 | 声学设备及其晶圆级封装方法 |
CN108917668A (zh) * | 2018-06-12 | 2018-11-30 | 重庆大学 | 一种差分式双谐振器声波拉伸应变传感器芯片 |
CN111030626A (zh) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | 声波器件的制作方法及声波器件 |
US11865581B2 (en) | 2018-11-21 | 2024-01-09 | Stmicroelectronics S.R.L. | Ultrasonic MEMS acoustic transducer with reduced stress sensitivity and manufacturing process thereof |
Families Citing this family (87)
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---|---|---|---|---|
JP4381714B2 (ja) * | 2003-04-16 | 2009-12-09 | Okiセミコンダクタ株式会社 | 表面弾性波デバイス、表面弾性波装置、及び表面弾性波デバイスの製造方法 |
JP4419732B2 (ja) * | 2003-09-02 | 2010-02-24 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法 |
US7298231B2 (en) * | 2004-05-27 | 2007-11-20 | Kyocera Corporation | Surface acoustic wave device and communication apparatus |
US7389570B2 (en) * | 2004-06-28 | 2008-06-24 | Kyocera Corporation | Surface acoustic wave device manufacturing method, surface acoustic wave device, and communications equipment |
US7332986B2 (en) * | 2004-06-28 | 2008-02-19 | Kyocera Corporation | Surface acoustic wave apparatus and communications equipment |
JP4587732B2 (ja) * | 2004-07-28 | 2010-11-24 | 京セラ株式会社 | 弾性表面波装置 |
JP4412123B2 (ja) * | 2004-09-09 | 2010-02-10 | エプソントヨコム株式会社 | 表面弾性波デバイス |
KR100666693B1 (ko) * | 2004-11-23 | 2007-01-11 | 삼성전자주식회사 | 모놀리식 듀플렉서 |
JP4033204B2 (ja) | 2004-12-01 | 2008-01-16 | セイコーエプソン株式会社 | 弾性表面波素子の製造方法 |
JP2006197554A (ja) * | 2004-12-17 | 2006-07-27 | Seiko Epson Corp | 弾性表面波デバイス及びその製造方法、icカード、携帯用電子機器 |
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JP4601415B2 (ja) * | 2004-12-24 | 2010-12-22 | 京セラ株式会社 | 弾性表面波装置および通信装置 |
JP4692024B2 (ja) * | 2005-03-04 | 2011-06-01 | パナソニック株式会社 | 弾性表面波デバイス |
JP4553765B2 (ja) * | 2005-03-25 | 2010-09-29 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
KR100638821B1 (ko) | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 표면탄성파 소자 및 그 제조방법 |
US8217473B2 (en) * | 2005-07-29 | 2012-07-10 | Hewlett-Packard Development Company, L.P. | Micro electro-mechanical system packaging and interconnect |
JP4553813B2 (ja) * | 2005-08-29 | 2010-09-29 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
WO2007049699A1 (ja) | 2005-10-27 | 2007-05-03 | Kyocera Corporation | 分波器とそれを用いた通信装置 |
WO2007056808A1 (en) * | 2005-11-18 | 2007-05-24 | Ewise Systems Pty Ltd | A method and apparatus for facilitating a secure transaction |
US8026594B2 (en) | 2005-11-25 | 2011-09-27 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
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JP4088317B2 (ja) * | 2005-12-22 | 2008-05-21 | 松下電工株式会社 | センサエレメント |
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JP4978030B2 (ja) * | 2006-03-07 | 2012-07-18 | セイコーエプソン株式会社 | 圧電デバイス |
JP2007258917A (ja) * | 2006-03-22 | 2007-10-04 | Epson Toyocom Corp | 圧電デバイス |
JP2008112847A (ja) | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
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CN105810590A (zh) * | 2016-03-18 | 2016-07-27 | 中国电子科技集团公司第二十六研究所 | 声表面波滤波器晶圆键合封装工艺 |
CN108246593A (zh) * | 2016-12-28 | 2018-07-06 | 意法半导体股份有限公司 | 压电式微加工超声换能器及其制造方法 |
US10576500B2 (en) | 2016-12-28 | 2020-03-03 | Stmicroelectronics S.R.L. | Piezoelectric micro-machined ultrasonic transducer (PMUT) and method for manufacturing the PMUT |
CN108246593B (zh) * | 2016-12-28 | 2021-02-09 | 意法半导体股份有限公司 | 压电式微加工超声换能器及其制造方法 |
CN108313974A (zh) * | 2018-02-07 | 2018-07-24 | 宜确半导体(苏州)有限公司 | 声学设备及其晶圆级封装方法 |
CN108321123A (zh) * | 2018-02-07 | 2018-07-24 | 宜确半导体(苏州)有限公司 | 声学设备及其晶圆级封装方法 |
CN108917668A (zh) * | 2018-06-12 | 2018-11-30 | 重庆大学 | 一种差分式双谐振器声波拉伸应变传感器芯片 |
CN108917668B (zh) * | 2018-06-12 | 2024-07-05 | 重庆大学 | 一种差分式双谐振器声波拉伸应变传感器芯片 |
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CN111030626A (zh) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | 声波器件的制作方法及声波器件 |
Also Published As
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USRE45419E1 (en) | 2015-03-17 |
US20040207485A1 (en) | 2004-10-21 |
EP1471635A2 (en) | 2004-10-27 |
KR100788110B1 (ko) | 2007-12-21 |
CN100433551C (zh) | 2008-11-12 |
EP1471635A3 (en) | 2005-10-12 |
US7227429B2 (en) | 2007-06-05 |
KR20040086189A (ko) | 2004-10-08 |
JP2004304622A (ja) | 2004-10-28 |
EP1471635B1 (en) | 2012-03-28 |
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