CN1527484B - 集成电路存储器装置及控制延迟锁定环电路的方法 - Google Patents
集成电路存储器装置及控制延迟锁定环电路的方法 Download PDFInfo
- Publication number
- CN1527484B CN1527484B CN 200410033080 CN200410033080A CN1527484B CN 1527484 B CN1527484 B CN 1527484B CN 200410033080 CN200410033080 CN 200410033080 CN 200410033080 A CN200410033080 A CN 200410033080A CN 1527484 B CN1527484 B CN 1527484B
- Authority
- CN
- China
- Prior art keywords
- signal
- delay
- locked loop
- control
- described device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 4
- 238000010615 ring circuit Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract description 30
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- 230000003111 delayed effect Effects 0.000 abstract 3
- 230000008859 change Effects 0.000 description 7
- 230000008676 import Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 3
- 102100036467 Protein delta homolog 1 Human genes 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 101150102995 dlk-1 gene Proteins 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
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- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229940074869 marquis Drugs 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- VBUNOIXRZNJNAD-UHFFFAOYSA-N ponazuril Chemical compound CC1=CC(N2C(N(C)C(=O)NC2=O)=O)=CC=C1OC1=CC=C(S(=O)(=O)C(F)(F)F)C=C1 VBUNOIXRZNJNAD-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR13429/2003 | 2003-03-04 | ||
KR13429/03 | 2003-03-04 | ||
KR10-2003-0013429A KR100493054B1 (ko) | 2003-03-04 | 2003-03-04 | 지연동기 루프를 구비하는 반도체 장치 및 지연동기 루프제어방법 |
US10/646,718 US6937534B2 (en) | 2003-03-04 | 2003-08-25 | Integrated circuit memory device including delay locked loop circuit and delay locked loop control circuit and method of controlling delay locked loop circuit |
US10/646,718 | 2003-08-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1527484A CN1527484A (zh) | 2004-09-08 |
CN1527484B true CN1527484B (zh) | 2010-05-05 |
Family
ID=32911522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200410033080 Expired - Lifetime CN1527484B (zh) | 2003-03-04 | 2004-03-04 | 集成电路存储器装置及控制延迟锁定环电路的方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4276112B2 (de) |
CN (1) | CN1527484B (de) |
DE (1) | DE102004011732B4 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011061457A (ja) | 2009-09-09 | 2011-03-24 | Elpida Memory Inc | クロック生成回路及びこれを備える半導体装置並びにデータ処理システム |
JP5695895B2 (ja) | 2010-12-16 | 2015-04-08 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
JP2013030247A (ja) * | 2011-07-28 | 2013-02-07 | Elpida Memory Inc | 情報処理システム |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6342801B1 (en) * | 1999-06-29 | 2002-01-29 | Hyundai Electronics Industries Co., Ltd. | Duty cycle correction circuit of delay locked loop |
US6501328B1 (en) * | 2001-08-14 | 2002-12-31 | Sun Microsystems, Inc. | Method for reducing peak to peak jitter in a dual-loop delay locked loop |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100543934B1 (ko) * | 2000-05-31 | 2006-01-23 | 주식회사 하이닉스반도체 | 반도체 메모리 장치에서 어드레스 및 데이터 억세스타임을 고속으로 하는 제어 및 어드레스 장치 |
EP1435145A4 (de) * | 2001-10-09 | 2010-06-02 | Interdigital Tech Corp | Durch wegverlust unterstützte leistungsregelung in geschlossener schleife |
-
2004
- 2004-03-04 CN CN 200410033080 patent/CN1527484B/zh not_active Expired - Lifetime
- 2004-03-04 JP JP2004060665A patent/JP4276112B2/ja not_active Expired - Lifetime
- 2004-03-04 DE DE200410011732 patent/DE102004011732B4/de not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6342801B1 (en) * | 1999-06-29 | 2002-01-29 | Hyundai Electronics Industries Co., Ltd. | Duty cycle correction circuit of delay locked loop |
US6501328B1 (en) * | 2001-08-14 | 2002-12-31 | Sun Microsystems, Inc. | Method for reducing peak to peak jitter in a dual-loop delay locked loop |
Also Published As
Publication number | Publication date |
---|---|
JP4276112B2 (ja) | 2009-06-10 |
JP2004273106A (ja) | 2004-09-30 |
DE102004011732A1 (de) | 2004-09-23 |
CN1527484A (zh) | 2004-09-08 |
DE102004011732B4 (de) | 2010-04-01 |
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