CN1333439C - 多晶硅薄膜晶体管的多晶硅膜的形成方法 - Google Patents
多晶硅薄膜晶体管的多晶硅膜的形成方法 Download PDFInfo
- Publication number
- CN1333439C CN1333439C CNB2004100857868A CN200410085786A CN1333439C CN 1333439 C CN1333439 C CN 1333439C CN B2004100857868 A CNB2004100857868 A CN B2004100857868A CN 200410085786 A CN200410085786 A CN 200410085786A CN 1333439 C CN1333439 C CN 1333439C
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- film
- irradiation
- zone
- poly
- polysilicon film
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 238000002425 crystallisation Methods 0.000 claims description 20
- 230000008025 crystallization Effects 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 230000004927 fusion Effects 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 48
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000010415 tropism Effects 0.000 description 2
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR98756/03 | 2003-12-29 | ||
KR98756/2003 | 2003-12-29 | ||
KR1020030098756A KR100663298B1 (ko) | 2003-12-29 | 2003-12-29 | 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638044A CN1638044A (zh) | 2005-07-13 |
CN1333439C true CN1333439C (zh) | 2007-08-22 |
Family
ID=34698654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100857868A Active CN1333439C (zh) | 2003-12-29 | 2004-10-22 | 多晶硅薄膜晶体管的多晶硅膜的形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7205033B2 (zh) |
JP (1) | JP4365757B2 (zh) |
KR (1) | KR100663298B1 (zh) |
CN (1) | CN1333439C (zh) |
TW (1) | TWI294139B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
KR100631013B1 (ko) | 2003-12-29 | 2006-10-04 | 엘지.필립스 엘시디 주식회사 | 주기성을 가진 패턴이 형성된 레이저 마스크 및 이를이용한 결정화방법 |
CN105185694A (zh) * | 2015-08-20 | 2015-12-23 | 京东方科技集团股份有限公司 | 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管 |
CN106087040B (zh) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | 半导体多晶化***和对单晶半导体基板进行多晶化的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6117752A (en) * | 1997-08-12 | 2000-09-12 | Kabushiki Kaisha Toshiba | Method of manufacturing polycrystalline semiconductor thin film |
CN1387675A (zh) * | 1999-09-03 | 2002-12-25 | 纽约市哥伦比亚大学托管会 | 用顺序横向固化制造均匀大晶粒和晶粒边界位置受控的多晶硅薄膜半导体的方法 |
JP2003045803A (ja) * | 2001-06-07 | 2003-02-14 | Lg Philips Lcd Co Ltd | シリコン結晶化方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100303138B1 (ko) * | 1998-06-09 | 2001-11-30 | 구본준, 론 위라하디락사 | 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 |
US6573163B2 (en) | 2001-01-29 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
KR100558678B1 (ko) * | 2001-06-01 | 2006-03-10 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 결정화방법 |
KR100484399B1 (ko) * | 2002-05-23 | 2005-04-20 | 엘지.필립스 엘시디 주식회사 | 실리콘의 결정화용 마스크 및 결정화 방법 |
US20040084679A1 (en) * | 2002-10-30 | 2004-05-06 | Sharp Kabushiki Kaisha | Semiconductor devices and methods of manufacture thereof |
-
2003
- 2003-12-29 KR KR1020030098756A patent/KR100663298B1/ko active IP Right Grant
-
2004
- 2004-09-03 TW TW093126771A patent/TWI294139B/zh active
- 2004-09-03 US US10/934,826 patent/US7205033B2/en active Active
- 2004-09-09 JP JP2004262949A patent/JP4365757B2/ja active Active
- 2004-10-22 CN CNB2004100857868A patent/CN1333439C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6117752A (en) * | 1997-08-12 | 2000-09-12 | Kabushiki Kaisha Toshiba | Method of manufacturing polycrystalline semiconductor thin film |
CN1387675A (zh) * | 1999-09-03 | 2002-12-25 | 纽约市哥伦比亚大学托管会 | 用顺序横向固化制造均匀大晶粒和晶粒边界位置受控的多晶硅薄膜半导体的方法 |
JP2003045803A (ja) * | 2001-06-07 | 2003-02-14 | Lg Philips Lcd Co Ltd | シリコン結晶化方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005197657A (ja) | 2005-07-21 |
US20050142299A1 (en) | 2005-06-30 |
KR20050067742A (ko) | 2005-07-05 |
JP4365757B2 (ja) | 2009-11-18 |
US7205033B2 (en) | 2007-04-17 |
TW200522156A (en) | 2005-07-01 |
CN1638044A (zh) | 2005-07-13 |
KR100663298B1 (ko) | 2007-01-02 |
TWI294139B (en) | 2008-03-01 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HYDIS TECHNOLOGIES CO., LTD. Free format text: FORMER NAME: GYONG TONG BANG DISPLAY SCIENCE + TECHNOLOGY CO. |
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CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Hydis Technologies Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Gyong Tong Bang Display Science & Technology Co. |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20050713 Assignee: BOE Technology Group Co., Ltd. Assignor: Hydis Technologies Co., Ltd. Contract record no.: 2014990000768 Denomination of invention: Method for forming polycrystalline silicon film of polycrystalline silicon tft Granted publication date: 20070822 License type: Common License Record date: 20140924 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model |