KR100663298B1 - 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 - Google Patents
다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 Download PDFInfo
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- KR100663298B1 KR100663298B1 KR1020030098756A KR20030098756A KR100663298B1 KR 100663298 B1 KR100663298 B1 KR 100663298B1 KR 1020030098756 A KR1020030098756 A KR 1020030098756A KR 20030098756 A KR20030098756 A KR 20030098756A KR 100663298 B1 KR100663298 B1 KR 100663298B1
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- Prior art keywords
- silicon film
- polycrystalline silicon
- poly
- film
- region
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000010408 film Substances 0.000 claims abstract description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000002425 crystallisation Methods 0.000 claims abstract description 7
- 230000008025 crystallization Effects 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000004606 Fillers/Extenders Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 8
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020750 SixGey Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
- 마스크 패턴을 이용한 레이저 조사를 통해 유리기판 상에 증착된 비정질 실리콘막을 결정화시켜 다결정 실리콘막을 형성하는 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법으로서,상기 비정질 실리콘막의 결정화는 유리기판을 일정한 거리 단위로 평행이동 (translation)하면서 소정 형상의 마스크 패턴을 구비한 마스크를 이용해서 레이저를 조사하여 결정립(grain)을 원형으로 성장시키는 방식으로 수행하는 것을 특징으로 하는 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법.
- 제 1 항에 있어서, 상기 마스크 패턴은일정 길이를 갖는 3개의 지역으로 구분되며, 각 지역은 다시 6개의 삼각형으로 구성된 육각형의 유니트 셀들로 이루어지며, 각 유니트 셀에서의 마주보는 2개의 삼각형은 투과영역을 제공하고 나머지 4개의 삼각형은 비투과영역을 제공하며, 상기 투과영역의 위치는 각 지역에서 서로 상이한 것을 특징으로 하는 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법.
- 제 1 항에 있어서, 상기 유리기판의 평행이동은 마스크 패턴에서의 각 지역간 거리만큼으로 하는 것을 특징으로 하는 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법.
- 제 1 항에 있어서, 상기 레이저 조사는 비정질 실리콘막을 완전 용융시키는 에너지로 수행하는 것을 특징으로 하는 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법.
- 제 1 항에 있어서, 상기 레이저 조사는 펄스 지속 시간이 증가되도록 펄스 지속 증량기(pulse duration extender)를 이용하여 수행하는 것을 특징으로 하는 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030098756A KR100663298B1 (ko) | 2003-12-29 | 2003-12-29 | 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 |
US10/934,826 US7205033B2 (en) | 2003-12-29 | 2004-09-03 | Method for forming polycrystalline silicon film of polycrystalline silicon TFT |
TW093126771A TWI294139B (en) | 2003-12-29 | 2004-09-03 | Method for forming polycrystalline silicon film of polycrystalline silicon tft |
JP2004262949A JP4365757B2 (ja) | 2003-12-29 | 2004-09-09 | 多結晶シリコン薄膜トランジスタの多結晶シリコン膜の形成方法 |
CNB2004100857868A CN1333439C (zh) | 2003-12-29 | 2004-10-22 | 多晶硅薄膜晶体管的多晶硅膜的形成方法 |
Applications Claiming Priority (1)
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KR1020030098756A KR100663298B1 (ko) | 2003-12-29 | 2003-12-29 | 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 |
Publications (2)
Publication Number | Publication Date |
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KR20050067742A KR20050067742A (ko) | 2005-07-05 |
KR100663298B1 true KR100663298B1 (ko) | 2007-01-02 |
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KR1020030098756A KR100663298B1 (ko) | 2003-12-29 | 2003-12-29 | 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7205033B2 (ko) |
JP (1) | JP4365757B2 (ko) |
KR (1) | KR100663298B1 (ko) |
CN (1) | CN1333439C (ko) |
TW (1) | TWI294139B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
KR100631013B1 (ko) | 2003-12-29 | 2006-10-04 | 엘지.필립스 엘시디 주식회사 | 주기성을 가진 패턴이 형성된 레이저 마스크 및 이를이용한 결정화방법 |
CN105185694A (zh) * | 2015-08-20 | 2015-12-23 | 京东方科技集团股份有限公司 | 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管 |
CN106087040B (zh) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | 半导体多晶化***和对单晶半导体基板进行多晶化的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000001170A (ko) * | 1998-06-09 | 2000-01-15 | 구본준, 론 위라하디락사 | 실리콘 박막을 결정화하는 방법과 이를 이용한 박막트랜지스터제조방법 |
KR20020091896A (ko) * | 2001-06-01 | 2002-12-11 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법 |
US6573163B2 (en) | 2001-01-29 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
KR20030090338A (ko) * | 2002-05-23 | 2003-11-28 | 엘지.필립스 엘시디 주식회사 | 실리콘의 결정화용 마스크 및 결정화 방법 |
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US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
KR100424593B1 (ko) * | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법 |
US20040084679A1 (en) * | 2002-10-30 | 2004-05-06 | Sharp Kabushiki Kaisha | Semiconductor devices and methods of manufacture thereof |
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- 2003-12-29 KR KR1020030098756A patent/KR100663298B1/ko active IP Right Grant
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2004
- 2004-09-03 TW TW093126771A patent/TWI294139B/zh active
- 2004-09-03 US US10/934,826 patent/US7205033B2/en active Active
- 2004-09-09 JP JP2004262949A patent/JP4365757B2/ja active Active
- 2004-10-22 CN CNB2004100857868A patent/CN1333439C/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000001170A (ko) * | 1998-06-09 | 2000-01-15 | 구본준, 론 위라하디락사 | 실리콘 박막을 결정화하는 방법과 이를 이용한 박막트랜지스터제조방법 |
US6573163B2 (en) | 2001-01-29 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
KR20020091896A (ko) * | 2001-06-01 | 2002-12-11 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법 |
KR20030090338A (ko) * | 2002-05-23 | 2003-11-28 | 엘지.필립스 엘시디 주식회사 | 실리콘의 결정화용 마스크 및 결정화 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2005197657A (ja) | 2005-07-21 |
US20050142299A1 (en) | 2005-06-30 |
KR20050067742A (ko) | 2005-07-05 |
JP4365757B2 (ja) | 2009-11-18 |
US7205033B2 (en) | 2007-04-17 |
TW200522156A (en) | 2005-07-01 |
CN1638044A (zh) | 2005-07-13 |
CN1333439C (zh) | 2007-08-22 |
TWI294139B (en) | 2008-03-01 |
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