CN1230029A - 垂直型金属绝缘体半导体场效应晶体管及其制造方法 - Google Patents
垂直型金属绝缘体半导体场效应晶体管及其制造方法 Download PDFInfo
- Publication number
- CN1230029A CN1230029A CN99103018A CN99103018A CN1230029A CN 1230029 A CN1230029 A CN 1230029A CN 99103018 A CN99103018 A CN 99103018A CN 99103018 A CN99103018 A CN 99103018A CN 1230029 A CN1230029 A CN 1230029A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000012212 insulator Substances 0.000 title description 5
- 230000005669 field effect Effects 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 title description 2
- 239000002184 metal Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000012535 impurity Substances 0.000 claims abstract description 51
- 238000005516 engineering process Methods 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 5
- 230000001965 increasing effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP038287/1998 | 1998-02-20 | ||
JP03828798A JP3219045B2 (ja) | 1998-02-20 | 1998-02-20 | 縦型misfetの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1230029A true CN1230029A (zh) | 1999-09-29 |
CN1122316C CN1122316C (zh) | 2003-09-24 |
Family
ID=12521104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99103018A Expired - Fee Related CN1122316C (zh) | 1998-02-20 | 1999-02-23 | 垂直型金属绝缘体半导体场效应晶体管及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6160288A (zh) |
JP (1) | JP3219045B2 (zh) |
KR (1) | KR100342623B1 (zh) |
CN (1) | CN1122316C (zh) |
DE (1) | DE19907201A1 (zh) |
TW (1) | TW417140B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314130C (zh) * | 2004-01-05 | 2007-05-02 | 东南大学 | 纵向多面栅金属-氧化物-半导体场效应晶体管及其制造方法 |
CN101197393B (zh) * | 2006-12-08 | 2010-06-02 | 夏普株式会社 | 具有高耐压mosfet的半导体器件及其制造方法 |
CN104300010A (zh) * | 2013-07-18 | 2015-01-21 | 万国半导体股份有限公司 | 常态导通高压开关 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3230504B2 (ja) * | 1998-12-11 | 2001-11-19 | 日本電気株式会社 | Mis型半導体装置及びその製造方法 |
US20010001494A1 (en) * | 1999-04-01 | 2001-05-24 | Christopher B. Kocon | Power trench mos-gated device and process for forming same |
JP3911585B2 (ja) * | 1999-05-18 | 2007-05-09 | 富士通株式会社 | 半導体装置およびその製造方法 |
JP4666708B2 (ja) * | 1999-10-13 | 2011-04-06 | 新電元工業株式会社 | 電界効果トランジスタ |
US6414347B1 (en) * | 2001-01-10 | 2002-07-02 | International Business Machines Corporation | Vertical MOSFET |
US6797992B2 (en) * | 2001-08-07 | 2004-09-28 | Fabtech, Inc. | Apparatus and method for fabricating a high reverse voltage semiconductor device |
DE10239868B4 (de) * | 2002-08-29 | 2005-12-29 | Infineon Technologies Ag | Verfahren zur Erzeugung von tiefen dotierten Säulenstrukturen in Halbleiterwafern und hierdurch hergestellte Trench-Transistoranordnung |
JP4622214B2 (ja) * | 2003-07-30 | 2011-02-02 | トヨタ自動車株式会社 | 電流センシング機能を有する半導体装置 |
JP3954541B2 (ja) * | 2003-08-05 | 2007-08-08 | 株式会社東芝 | 半導体装置及びその製造方法 |
GB0404749D0 (en) * | 2004-03-03 | 2004-04-07 | Koninkl Philips Electronics Nv | Trench field effect transistor and method of making it |
KR100624053B1 (ko) * | 2004-09-09 | 2006-09-15 | 라이톤 세미컨덕터 코퍼레이션 | 펀치스루를 방지하기 위한 전력용 반도체 소자 및 그 제조방법 |
JP4964442B2 (ja) * | 2005-08-10 | 2012-06-27 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
US7283389B2 (en) * | 2005-12-09 | 2007-10-16 | Macronix International Co., Ltd. | Gated diode nonvolatile memory cell array |
US20090053869A1 (en) * | 2007-08-22 | 2009-02-26 | Infineon Technologies Austria Ag | Method for producing an integrated circuit including a trench transistor and integrated circuit |
JP6032337B1 (ja) * | 2015-09-28 | 2016-11-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6233539B1 (ja) * | 2016-12-21 | 2017-11-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0286171A (ja) * | 1988-09-22 | 1990-03-27 | Hitachi Ltd | 半導体素子およびその製造方法 |
JP2832543B2 (ja) * | 1989-07-24 | 1998-12-09 | セイコーインスツルメンツ株式会社 | 半導体装置とその製造方法 |
JPH0621468A (ja) * | 1992-06-29 | 1994-01-28 | Toshiba Corp | 絶縁ゲート型半導体装置 |
US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
JPH08306914A (ja) * | 1995-04-27 | 1996-11-22 | Nippondenso Co Ltd | 半導体装置およびその製造方法 |
US5821583A (en) * | 1996-03-06 | 1998-10-13 | Siliconix Incorporated | Trenched DMOS transistor with lightly doped tub |
JP3648648B2 (ja) * | 1996-03-26 | 2005-05-18 | カルソニックプロダクツ株式会社 | 燃料キャップの閉め忘れ防止装置と車両の燃料盗難防止装置 |
-
1998
- 1998-02-20 JP JP03828798A patent/JP3219045B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-19 US US09/252,662 patent/US6160288A/en not_active Expired - Lifetime
- 1999-02-19 DE DE19907201A patent/DE19907201A1/de not_active Ceased
- 1999-02-20 KR KR1019990005734A patent/KR100342623B1/ko not_active IP Right Cessation
- 1999-02-20 TW TW088102482A patent/TW417140B/zh active
- 1999-02-23 CN CN99103018A patent/CN1122316C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314130C (zh) * | 2004-01-05 | 2007-05-02 | 东南大学 | 纵向多面栅金属-氧化物-半导体场效应晶体管及其制造方法 |
CN101197393B (zh) * | 2006-12-08 | 2010-06-02 | 夏普株式会社 | 具有高耐压mosfet的半导体器件及其制造方法 |
CN104300010A (zh) * | 2013-07-18 | 2015-01-21 | 万国半导体股份有限公司 | 常态导通高压开关 |
CN104300010B (zh) * | 2013-07-18 | 2017-05-03 | 万国半导体股份有限公司 | 常态导通高压开关 |
Also Published As
Publication number | Publication date |
---|---|
JPH11238877A (ja) | 1999-08-31 |
TW417140B (en) | 2001-01-01 |
US6160288A (en) | 2000-12-12 |
JP3219045B2 (ja) | 2001-10-15 |
DE19907201A1 (de) | 1999-09-02 |
KR19990072808A (ko) | 1999-09-27 |
KR100342623B1 (ko) | 2002-06-28 |
CN1122316C (zh) | 2003-09-24 |
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