CN1160861C - 使用参考电压产生负电压 - Google Patents
使用参考电压产生负电压 Download PDFInfo
- Publication number
- CN1160861C CN1160861C CNB981248365A CN98124836A CN1160861C CN 1160861 C CN1160861 C CN 1160861C CN B981248365 A CNB981248365 A CN B981248365A CN 98124836 A CN98124836 A CN 98124836A CN 1160861 C CN1160861 C CN 1160861C
- Authority
- CN
- China
- Prior art keywords
- negative voltage
- mos transistor
- voltage
- trap
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/071—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate a negative voltage output from a positive voltage source
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Abstract
Description
电压104(V) | SW647 | SW648 | SW649 | SW644 | SW645 | SW646 | SW641 | SW642 | SW643 |
-14 | 导通 | 截止 | 截止 | 导通 | 截止 | 截止 | 导通 | 截止 | 截止 |
-13 | 截止 | 导通 | 截止 | 导通 | 截止 | 截止 | 导通 | 截止 | 截止 |
-12 | 截止 | 截止 | 导通 | 导通 | 截止 | 截止 | 导通 | 截止 | 截止 |
-11 | 截止 | 截止 | 导通 | 截止 | 导通 | 截止 | 导通 | 截止 | 截止 |
-10 | 截止 | 截止 | 导通 | 截止 | 截止 | 导通 | 导通 | 截止 | 截止 |
-9 | 截止 | 截止 | 导通 | 截止 | 截止 | 导通 | 截止 | 导通 | 截止 |
-8 | 截止 | 截止 | 导通 | 截止 | 截止 | 导通 | 截止 | 截止 | 导通 |
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP315255/1997 | 1997-11-17 | ||
JP31525597A JP3278765B2 (ja) | 1997-11-17 | 1997-11-17 | 負電圧生成回路 |
JP315255/97 | 1997-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1219032A CN1219032A (zh) | 1999-06-09 |
CN1160861C true CN1160861C (zh) | 2004-08-04 |
Family
ID=18063237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981248365A Expired - Lifetime CN1160861C (zh) | 1997-11-17 | 1998-11-17 | 使用参考电压产生负电压 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6229379B1 (zh) |
JP (1) | JP3278765B2 (zh) |
KR (1) | KR100337999B1 (zh) |
CN (1) | CN1160861C (zh) |
TW (1) | TW427070B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105511534A (zh) * | 2014-09-22 | 2016-04-20 | 联合聚晶股份有限公司 | 多级分压电路 |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6448823B1 (en) * | 1999-11-30 | 2002-09-10 | Xilinx, Inc. | Tunable circuit for detection of negative voltages |
JP3604991B2 (ja) | 2000-03-14 | 2004-12-22 | Necエレクトロニクス株式会社 | 低電源電圧検知回路 |
JP3718106B2 (ja) | 2000-05-22 | 2005-11-16 | 松下電器産業株式会社 | 半導体集積回路 |
JP5102413B2 (ja) * | 2000-07-12 | 2012-12-19 | ユナイテッド・マイクロエレクトロニクス・コーポレイション | 第1の電源電圧から第2の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置 |
JP2002208275A (ja) * | 2001-01-11 | 2002-07-26 | Matsushita Electric Ind Co Ltd | 半導体集積回路およびその検査方法 |
US7336121B2 (en) * | 2001-05-04 | 2008-02-26 | Samsung Electronics Co., Ltd. | Negative voltage generator for a semiconductor memory device |
US7941675B2 (en) * | 2002-12-31 | 2011-05-10 | Burr James B | Adaptive power control |
US7112978B1 (en) | 2002-04-16 | 2006-09-26 | Transmeta Corporation | Frequency specific closed loop feedback control of integrated circuits |
JP4274786B2 (ja) * | 2002-12-12 | 2009-06-10 | パナソニック株式会社 | 電圧発生回路 |
US7228242B2 (en) | 2002-12-31 | 2007-06-05 | Transmeta Corporation | Adaptive power control based on pre package characterization of integrated circuits |
US7953990B2 (en) | 2002-12-31 | 2011-05-31 | Stewart Thomas E | Adaptive power control based on post package characterization of integrated circuits |
US6861895B1 (en) * | 2003-06-17 | 2005-03-01 | Xilinx Inc | High voltage regulation circuit to minimize voltage overshoot |
US7012461B1 (en) * | 2003-12-23 | 2006-03-14 | Transmeta Corporation | Stabilization component for a substrate potential regulation circuit |
US7129771B1 (en) | 2003-12-23 | 2006-10-31 | Transmeta Corporation | Servo loop for well bias voltage source |
US7692477B1 (en) * | 2003-12-23 | 2010-04-06 | Tien-Min Chen | Precise control component for a substrate potential regulation circuit |
US7649402B1 (en) | 2003-12-23 | 2010-01-19 | Tien-Min Chen | Feedback-controlled body-bias voltage source |
US7774625B1 (en) | 2004-06-22 | 2010-08-10 | Eric Chien-Li Sheng | Adaptive voltage control by accessing information stored within and specific to a microprocessor |
US7562233B1 (en) | 2004-06-22 | 2009-07-14 | Transmeta Corporation | Adaptive control of operating and body bias voltages |
JP2006129127A (ja) * | 2004-10-29 | 2006-05-18 | Olympus Corp | 電圧供給回路及びそれを用いた固体撮像装置 |
JP4942979B2 (ja) * | 2004-11-17 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8125209B2 (en) * | 2004-11-18 | 2012-02-28 | St-Ericsson Sa | Reference voltage circuit |
US20070153522A1 (en) * | 2006-01-03 | 2007-07-05 | Helget Gerald E | Identification and/or trail light |
US20070273433A1 (en) * | 2006-05-24 | 2007-11-29 | Choy Jon S | Floating voltage source |
US8476709B2 (en) * | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
JP5315604B2 (ja) * | 2006-09-29 | 2013-10-16 | 富士通セミコンダクター株式会社 | 半導体集積回路 |
TWI328925B (en) | 2007-04-11 | 2010-08-11 | Au Optronics Corp | Negative voltage converter |
JP5369413B2 (ja) * | 2007-09-14 | 2013-12-18 | 富士電機株式会社 | 半導体装置 |
US7902907B2 (en) * | 2007-12-12 | 2011-03-08 | Micron Technology, Inc. | Compensation capacitor network for divided diffused resistors for a voltage divider |
JP5590802B2 (ja) * | 2008-04-11 | 2014-09-17 | ピーエスフォー ルクスコ エスエイアールエル | 基本セルおよび半導体装置 |
JP2010074587A (ja) * | 2008-09-19 | 2010-04-02 | Seiko Epson Corp | 電圧比較器 |
US7733126B1 (en) | 2009-03-31 | 2010-06-08 | Freescale Semiconductor, Inc. | Negative voltage generation |
JP5318676B2 (ja) | 2009-06-25 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5376516B2 (ja) * | 2009-07-27 | 2013-12-25 | スパンション エルエルシー | 半導体装置 |
CN102213967A (zh) * | 2010-04-12 | 2011-10-12 | 辉达公司 | 具有电压调节功能的gpu芯片及其制作方法 |
CN102647082B (zh) * | 2012-04-24 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | 负电压产生电路 |
KR101382546B1 (ko) * | 2012-11-26 | 2014-04-07 | 순천향대학교 산학협력단 | 양극성 가변 출력전압의 펄스형 전원공급회로 |
US9577626B2 (en) | 2014-08-07 | 2017-02-21 | Skyworks Solutions, Inc. | Apparatus and methods for controlling radio frequency switches |
US9467124B2 (en) * | 2014-09-30 | 2016-10-11 | Skyworks Solutions, Inc. | Voltage generator with charge pump and related methods and apparatus |
US10250247B2 (en) | 2016-02-10 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
US10236875B2 (en) | 2016-04-15 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the semiconductor device |
KR102367787B1 (ko) | 2016-06-30 | 2022-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 동작 방법 |
US9785177B1 (en) | 2016-08-03 | 2017-10-10 | Nxp Usa, Inc. | Symmetrical positive and negative reference voltage generation |
CN106549572B (zh) * | 2016-10-27 | 2019-08-16 | 昆山龙腾光电有限公司 | 一种负电压产生电路 |
WO2018158650A1 (ja) * | 2017-03-03 | 2018-09-07 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の駆動方法 |
DE112018002796T5 (de) | 2017-05-31 | 2020-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Vergleichsschaltung, Halbleitervorrichtung, elektronische Komponente und elektronisches Gerät |
CN110348432A (zh) * | 2018-04-01 | 2019-10-18 | 印芯科技股份有限公司 | 光学识别模块 |
US10832765B2 (en) * | 2018-06-29 | 2020-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Variation tolerant read assist circuit for SRAM |
KR102646541B1 (ko) | 2019-05-15 | 2024-03-11 | 삼성전기주식회사 | Ldo 레귤레이터 없는 네가티브 전압 생성회로 |
CN115309231B (zh) * | 2021-05-08 | 2024-05-10 | 长鑫存储技术有限公司 | 比较电路与负电压生成*** |
CN114333926A (zh) * | 2022-01-27 | 2022-04-12 | 珠海博雅科技股份有限公司 | 待机工作的负压产生电路及非易失性存储器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113262A (en) | 1980-12-30 | 1982-07-14 | Seiko Epson Corp | Voltage dividing system for semiconductor integrated circuit |
JPS57199335A (en) | 1981-06-02 | 1982-12-07 | Toshiba Corp | Generating circuit for substrate bias |
JPS63166257A (ja) | 1986-12-27 | 1988-07-09 | Nec Corp | 半導体装置 |
JP2579517B2 (ja) | 1988-02-26 | 1997-02-05 | 富士通株式会社 | 基準電圧発生回路 |
JPH0744255B2 (ja) | 1988-03-14 | 1995-05-15 | 日本電気株式会社 | 基準電圧設定回路 |
KR0133933B1 (ko) * | 1988-11-09 | 1998-04-25 | 고스기 노부미쓰 | 기판바이어스 발생회로 |
JP3038870B2 (ja) | 1990-10-09 | 2000-05-08 | ソニー株式会社 | 抵抗素子 |
JP2604074B2 (ja) * | 1991-07-26 | 1997-04-23 | 株式会社テック | 電源装置 |
US5355014A (en) * | 1993-03-03 | 1994-10-11 | Bhasker Rao | Semiconductor device with integrated RC network and Schottky diode |
JPH0778471A (ja) | 1993-09-10 | 1995-03-20 | Toshiba Corp | 半導体集積回路 |
JPH07211510A (ja) * | 1994-01-27 | 1995-08-11 | Nippondenso Co Ltd | 半導体装置 |
US5553295A (en) * | 1994-03-23 | 1996-09-03 | Intel Corporation | Method and apparatus for regulating the output voltage of negative charge pumps |
JPH07273287A (ja) | 1994-03-28 | 1995-10-20 | Nec Eng Ltd | 半導体抵抗装置及びそれを用いた増幅回路 |
FR2719135B1 (fr) * | 1994-04-21 | 1996-06-28 | Sgs Thomson Microelectronics | Circuit de limitation de tension avec comparateur à hystérésis. |
US5489547A (en) * | 1994-05-23 | 1996-02-06 | Texas Instruments Incorporated | Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient |
US5483486A (en) * | 1994-10-19 | 1996-01-09 | Intel Corporation | Charge pump circuit for providing multiple output voltages for flash memory |
US5670907A (en) | 1995-03-14 | 1997-09-23 | Lattice Semiconductor Corporation | VBB reference for pumped substrates |
-
1997
- 1997-11-17 JP JP31525597A patent/JP3278765B2/ja not_active Expired - Lifetime
-
1998
- 1998-10-27 TW TW087117805A patent/TW427070B/zh not_active IP Right Cessation
- 1998-11-13 US US09/190,445 patent/US6229379B1/en not_active Expired - Lifetime
- 1998-11-16 KR KR1019980049135A patent/KR100337999B1/ko not_active IP Right Cessation
- 1998-11-17 CN CNB981248365A patent/CN1160861C/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105511534A (zh) * | 2014-09-22 | 2016-04-20 | 联合聚晶股份有限公司 | 多级分压电路 |
US9494963B2 (en) | 2014-09-22 | 2016-11-15 | Integrated Solutions Technology Inc. | Multi-stage voltage division circuit |
CN105511534B (zh) * | 2014-09-22 | 2017-12-05 | 联合聚晶股份有限公司 | 多级分压电路 |
Also Published As
Publication number | Publication date |
---|---|
TW427070B (en) | 2001-03-21 |
CN1219032A (zh) | 1999-06-09 |
US6229379B1 (en) | 2001-05-08 |
JPH11150230A (ja) | 1999-06-02 |
KR19990045326A (ko) | 1999-06-25 |
KR100337999B1 (ko) | 2002-07-18 |
JP3278765B2 (ja) | 2002-04-30 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030410 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20030410 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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C14 | Grant of patent or utility model | ||
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Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: NEC CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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Owner name: DESAILA ADVANCED TECHNOLOGY COMPANY Free format text: FORMER OWNER: RENESAS ELECTRONICS CORPORATION Effective date: 20141017 |
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Granted publication date: 20040804 |