CN116333602A - Diamond liquid for thinning silicon carbide substrate and application thereof - Google Patents
Diamond liquid for thinning silicon carbide substrate and application thereof Download PDFInfo
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- CN116333602A CN116333602A CN202310160715.2A CN202310160715A CN116333602A CN 116333602 A CN116333602 A CN 116333602A CN 202310160715 A CN202310160715 A CN 202310160715A CN 116333602 A CN116333602 A CN 116333602A
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- diamond
- micro powder
- thinning
- silicon carbide
- carbide substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Abstract
The invention discloses diamond liquid for thinning a silicon carbide substrate and application thereof, relates to an abrasive material, and aims to solve the problem that if a supporting substrate is not placed, abrasive particles are easy to break under the condition of no support, so that the polishing and grinding effects are affected, and the technical scheme is as follows: the composite material consists of the following components in percentage by weight: 40-65wt% of diamond abrasive; 0.1-5wt% of dispersion stabilizer; 0.1-5wt% of strong oxidant; 0.02-0.03wt% of surfactant; 1-3wt% of a wetting agent; the balance of deionized water. The abrasive micro powder in the diamond abrasive is uniformly dispersed, so that the ground force is uniform, the cracking resistance of the abrasive micro powder can be ensured under the supporting action of no resin pad, the grinding effect of diamond liquid for thinning the silicon carbide substrate is improved, and the process is subjected to high-precision polishing under the condition that an additional resin pad is not needed by freezing and solidifying the polishing pad.
Description
Technical Field
The invention relates to an abrasive material, in particular to diamond liquid for thinning a silicon carbide substrate and application thereof.
Background
With the development of material science, the hardness of materials used in the 3C technical field is higher and higher, and the materials used in products such as a sapphire substrate, sapphire glass, a ceramic mobile phone rear cover, a ceramic fingerprint identification sheet, reinforced glass and the like are all made of materials with Mohs hardness of 9, so that the surfaces of the products are often required to be ground and polished by adopting a grinding tool in the production process.
The abrasive is one of the main materials for manufacturing the grinding tool, and is also one of the most important factors affecting the quality of the grinding tool, and the common abrasive has lower hardness and is not suitable for grinding and polishing operations of products with high hardness, in this case, special abrasive with large cutting force, high self-sharpening property and continuous grinding force is used, for example: diamond abrasive material.
The Chinese patent publication No. CN107652899B discloses a diamond liquid for polishing ceramic sapphire and a manufacturing method thereof, and the technical key points are as follows: (1) Carrying out surface treatment on the diamond monocrystal micro powder to obtain treated diamond monocrystal micro powder; (2) Preparing the treated diamond monocrystal micro powder into balls, and screening and shaping to obtain diamond balls; (3) And mixing the diamond balls with the additive, and uniformly dispersing to obtain the diamond liquid for polishing the ceramic sapphire.
A resin pad with a thinned sapphire substrate is disclosed in Chinese patent publication No. CN216000035U, which has the technical key points that: including substrate and attached to the wearing layer on substrate surface, the wearing layer includes a plurality of gaskets of evenly arranging on substrate surface, and the gasket all is regular polygon, and the inside holding tank that is used for holding abrasive material that is formed with of gasket, is provided with the enhancement layer on the one side that the substrate deviates from the wearing layer, and the enhancement layer includes the reinforcement muscle net, is provided with a plurality of meshes that correspond each other with the holding tank on the reinforcement muscle net, and the inside supporting rib that is used for supporting the holding tank that all is provided with of mesh, substrate, wearing layer and enhancement layer all adopt the PP resin material to make.
Currently, the thinning step of the sapphire substrate generally includes bonding, rough grinding, polishing, dewaxing, cleaning, and the like. When the horizontal thinning equipment is adopted for thinning, the sapphire substrate is directly pressed and rubbed with diamond micro powder particles on the grinding disc to achieve the purpose of thinning the substrate.
Based on the above-mentioned existing circumstances, when polishing abrasive materials made of diamond micro powder particles are used for polishing sapphire substrates and the like, resin pads are often required to be equipped as supporting substrates for polishing, the accommodating grooves formed in the supporting substrates accommodate the abrasive materials, and contact between the supporting substrates and workpieces also affects the polishing effect on the workpieces.
There is therefore a need to propose a new solution to this problem.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide diamond liquid for thinning a silicon carbide substrate and application thereof.
The technical aim of the invention is realized by the following technical scheme: the diamond liquid for thinning the silicon carbide substrate comprises the following components in percentage by weight:
40-65wt% of diamond abrasive;
0.1-5wt% of dispersion stabilizer;
0.1-5wt% of strong oxidant;
0.02-0.03wt% of surfactant;
1-3wt% of a wetting agent;
the balance of deionized water.
Through adopting above-mentioned technical scheme, make the polishing solution through single diamond abrasive material when waiting for the polishing thing to carry out chemical mechanical polishing to the silicon chip, can ensure the uniformity of silicon chip surface polishing grinding, and the abrasive material miropowder in the diamond abrasive material possesses good intensity, under dispersion stabilizer and strong oxidizer's effect, can evenly disperse, and fully polish and grind substances such as silicon chip, abrasive material miropowder in the diamond abrasive material is because its dispersion is even simultaneously, and then the power that receives the grinding is unanimous even, can be under the supporting effect of no resin liner, guarantee the anti fracture ability of abrasive material miropowder, improve the grinding effect of diamond liquid for the silicon carbide substrate attenuate.
The invention is further provided with: the diamond abrasive comprises fine grinding micro powder and group-type grinding particles, wherein the fine grinding micro powder and the group-type grinding particles are all made of diamond monocrystal micro powder.
Through adopting above-mentioned technical scheme, diamond abrasive material comprises fine grinding miropowder and group formula abrasive particle, when grinding, can carry out fine grinding to substances such as silicon chip through fine grinding miropowder, and group formula abrasive particle carries out the polishing simultaneously and grinds to reach the high-efficient processing of fine grinding.
The invention is further provided with: the preparation method of the fine grinding micro powder comprises the following steps: mixing and stirring the diamond monocrystal micro powder and the dispersing agent solution, performing solid-liquid separation, filtering and removing impurities to obtain diamond monocrystal micro powder wet materials, and drying the diamond monocrystal micro powder wet materials to obtain the modified diamond monocrystal micro powder.
By adopting the technical scheme, the fine grinding micro powder adopts the diamond micro powder to carry out dispersion impurity removal modification, the obtained modified diamond monocrystal micro powder can improve the consistency of the fine grinding micro powder, improves the grinding shearing force of the fine grinding micro powder during grinding, and is suitable for grinding with higher fineness.
The invention is further provided with: the preparation steps of the group-type abrasive particles comprise:
pretreating, namely, finely screening the diamond micro powder, and then pretreating the diamond micro powder by strong acid or strong alkali to obtain the diamond micro powder with the surface rich in oxygen groups;
magnetic agglomeration prepared with FeCl 2 ·4H 2 O is an iron source, hydrazine hydrate is selected as a precipitator and a morphology control agent, polyethylene glycol is used as a dispersing agent and a morphology control agent, and Fe is prepared by synthesis 3 O 4 。
By adopting the technical scheme, for the preparation of the group-type grinding particles, diamond micro powder is finely screened to obtain micro powder with consistent particle diameter, and the surface of the diamond micro powder is provided with oxygen-containing groups under the pretreatment action of strong acid or strong alkali, and in the subsequent magnetic agglomeration process, the obtained Fe is prepared 3 O 4 Polymerizing with diamond micropowder with oxygen-containing groups on surface, and using Fe 3 O 4 Has magnetic agglomeration, so that the group grindingThe particles have magnetic effect and can be used as materials of magnetic grinding polishing liquid.
The invention is further provided with: the specific steps of the pretreatment include: and (3) sieving the diamond micro powder, adding the diamond micro powder into a strong alkali solution or a strong acid solution, controlling the solid-liquid ratio to be less than 1:5, stirring at a low speed for 2-6 hours or heating to a micro-boiling state and keeping for 10 minutes, washing and filtering the diamond micro powder by a suction filtration device, and finally drying to obtain the diamond micro powder with the surface rich in oxygen groups.
The invention is further provided with: the strong alkali solution is sodium hydroxide solution with the concentration of 3mol/L, and the strong acid solution is concentrated sulfuric acid, concentrated nitric acid, and mixed acid of the concentrated sulfuric acid and the concentrated nitric acid.
The invention is further provided with: the preparation method of the magnetic agglomerate comprises the following specific steps: the preparation method of the magnetic agglomerate comprises the following specific steps: 1mmol of FeCl 2 ·4H 2 Mixing O with 5 mol of hydrazine hydrate, 15ml of absolute ethyl alcohol and 10ml of distilled water, adding a dispersing agent, uniformly dispersing by adopting an ultrasonic dispersing process, regulating the PH value to 8-9, then stirring in a water bath at constant temperature for 5 hours, keeping the constant temperature at 70 ℃, separating and cleaning after stirring to obtain Fe 3 O 4 。
The invention is further provided with: the magnetic agglomeration comprises the following specific steps: 10ml of distilled water, 15ml of absolute ethyl alcohol, 1 mmole of FeCl2.4H2O and 5 mmole of hydrazine hydrate are mixed, the pretreated diamond micro powder is added for 0.36Ct for multiple times, then dispersing agent is added, the mixture is uniformly dispersed and mixed, the pH value of the reaction system is regulated to 8-9, and the reaction is carried out for 5 hours by water bath at a constant speed. And after the reaction is finished, naturally cooling to room temperature, cleaning, magnetically separating, and drying in a vacuum drying oven at 25 ℃ for 24 hours to obtain the group-type grinding particles.
The diamond liquid for thinning the silicon carbide substrate, which is applied to grinding and polishing of a sapphire substrate without a resin liner, a silicon carbide substrate, sapphire glass, a rear cover of a ceramic mobile phone, a ceramic fingerprint identification sheet and reinforced glass, according to any one of claims 1 to 8.
The invention is further provided with: the specific steps of grinding and polishing are as follows: and carrying out freezing consolidation on the diamond liquid for thinning the silicon carbide substrate obtained by configuration to form a freezing consolidation polishing pad, then placing the freezing consolidation polishing pad on low-temperature polishing equipment, adding the diamond liquid for thinning the silicon carbide substrate, immersing the diamond liquid for thinning, contacting the freezing consolidation polishing pad with a workpiece to be polished, and starting the low-temperature polishing equipment for polishing.
In summary, the invention has the following beneficial effects:
when the polishing solution is used for carrying out chemical mechanical polishing on a silicon wafer waiting polishing object through a single diamond abrasive, the consistency of polishing and grinding on the surface of the silicon wafer can be ensured, abrasive micro powder in the diamond abrasive has good strength, can be uniformly dispersed under the action of a dispersion stabilizer and a strong oxidant, and can sufficiently polish and grind substances such as the silicon wafer, meanwhile, the abrasive micro powder in the diamond abrasive is uniform in dispersion and uniform in grinding force, and the anti-cracking capability of the abrasive micro powder can be ensured under the supporting action of a resin-free pad, so that the grinding effect of the diamond solution for thinning the silicon carbide substrate is improved.
Drawings
FIG. 1 is a linear graph of the results of the test of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Embodiment one: the diamond liquid for thinning the silicon carbide substrate comprises the following components in percentage by weight:
40wt% of diamond abrasive;
0.1wt% of a dispersion stabilizer;
0.1wt% of a strong oxidant;
0.02wt% of a surfactant;
1wt% of a wetting agent;
the balance of deionized water.
Embodiment two: the diamond liquid for thinning the silicon carbide substrate comprises the following components in percentage by weight:
51wt% of diamond abrasive;
2.4wt% of a dispersion stabilizer;
2.6wt% of a strong oxidant;
0.02wt% of a surfactant;
2wt% of a wetting agent;
the balance of deionized water.
Embodiment III: the diamond liquid for thinning the silicon carbide substrate comprises the following components in percentage by weight:
65wt% of diamond abrasive;
5wt% of a dispersion stabilizer;
5wt% of a strong oxidant;
0.03wt% of a surfactant;
3wt% of a wetting agent;
the balance of deionized water.
In the first, second and third embodiments, the diamond abrasive includes fine abrasive micropowder and cluster abrasive grains, each of which is made of diamond single crystal micropowder.
In the fourth embodiment, the diamond abrasive used in the first embodiment, the second embodiment and the third embodiment is prepared by the steps of: preparing fine grinding micro powder and preparing group-type grinding particles;
wherein, the preparation steps of the fine grinding micro powder comprise: mixing and stirring diamond monocrystal micro powder and a dispersing agent solution, performing solid-liquid separation, filtering and removing impurities to obtain diamond monocrystal micro powder wet materials, and drying the diamond monocrystal micro powder wet materials to obtain modified diamond monocrystal micro powder;
the preparation steps of the group-type abrasive particles comprise:
pretreating, namely, finely screening the diamond micro powder, and then pretreating the diamond micro powder by strong acid or strong alkali to obtain the diamond micro powder with the surface rich in oxygen groups;
preparing magnetic aggregation, namely synthesizing Fe3O4 by taking FeCl2.4H2O as an iron source, hydrazine hydrate as a precipitator and a morphology control agent, and polyethylene glycol as a dispersing agent and the morphology control agent;
and (3) magnetically agglomerating, namely depositing Fe3O4 on the surface of the diamond micro powder to form a coating layer by taking the pretreated diamond micro powder as a substrate, so as to obtain the agglomerated abrasive particles with magnetic polymerization.
Specifically, the specific steps of pretreatment include: the diamond micro powder is added into a strong alkali solution or a strong acid solution after being screened, in the embodiment, the strong alkali solution is a sodium hydroxide solution with the concentration of 3mol/L, the strong acid solution is concentrated sulfuric acid, concentrated nitric acid, mixed acid of the concentrated sulfuric acid and the concentrated nitric acid, the solid-liquid ratio is controlled to be less than 1:5, the diamond micro powder is stirred at a low speed for 2-6 hours or heated to a micro-boiling state and kept for 10 minutes, and then the diamond micro powder is washed and filtered by a suction filtration device, and finally the diamond micro powder with the surface rich in oxygen groups is prepared by drying.
The preparation method of the magnetic agglomerate comprises the following specific steps: 1mmol of FeCl 2 ·4H 2 Mixing O with 5 mol of hydrazine hydrate, 15ml of absolute ethyl alcohol and 10ml of distilled water, adding a dispersing agent, uniformly dispersing by adopting an ultrasonic dispersing process, regulating the PH value to 8-9, then stirring in a water bath at constant temperature for 5 hours, keeping the constant temperature at 70 ℃, separating and cleaning after stirring to obtain Fe 3 O 4 In this example, 10ml of distilled water, 15ml of absolute ethyl alcohol, 1 mmole of FeCl2.4H2O and 5 mmole of hydrazine hydrate were mixed, and the pretreated diamond micropowder was added 0.36Ct in several portions, then a dispersing agent was added, and the mixture was uniformly dispersed, and the pH of the reaction system was adjusted to 8-9, and the reaction was stirred at a constant speed in a water bath at 70℃for 5 hours. And after the reaction is finished, naturally cooling to room temperature, cleaning, magnetically separating, and drying in a vacuum drying oven at 25 ℃ for 24 hours to obtain the group-type grinding particles.
Fifth embodiment (V),
The diamond abrasive material obtained by the preparation method disclosed in the fourth embodiment is mainly applied to the grinding and polishing of a sapphire substrate without a resin liner, a silicon carbide substrate, sapphire glass, a ceramic mobile phone rear cover, a ceramic fingerprint identification sheet and reinforced glass according to the application of the diamond liquid for thinning the silicon carbide substrate prepared in the first embodiment, the second embodiment and the third embodiment, and discloses an application method of the diamond liquid for thinning the silicon carbide substrate: and during grinding and polishing, the prepared diamond liquid for thinning the silicon carbide substrate is frozen and consolidated to form a frozen and consolidated polishing pad, then the frozen and consolidated polishing pad is placed on low-temperature polishing equipment, then the diamond liquid for thinning the silicon carbide substrate is added to be soaked in the frozen and consolidated polishing pad to be contacted with a workpiece to be polished, and the low-temperature polishing equipment is started for polishing.
The diamond liquid for thinning the silicon carbide substrate of the first embodiment, the second embodiment and the third embodiment is prepared by gradient cooling, layered casting and layered freezing methods to obtain the frozen and solidified polishing pad with consistent size specification, weight and surface flatness, the frozen and solidified polishing pad and a workpiece to be polished, such as a monocrystalline silicon wafer, are polished and ground, the roughness of the surface of the monocrystalline silicon wafer is measured every 20min, and a diamond liquid for polishing ceramic sapphire, which is developed by the company and has the publication number CN 107652899A, is proposed to polish the workpiece in the test mode and in normal polishing luminescence as a reference comparative example I and a reference comparative example II.
The results of the specific experiments are shown in figure 1 of the drawings, and the polishing effect of the frozen polishing pad prepared by polishing the diamonds in the first, second and third embodiments is best from the analysis of the surface topography after polishing, and is obviously superior to the polishing effect of the diamond liquid for thinning the silicon carbide substrate which is developed previously.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (10)
1. A diamond liquid for thinning a silicon carbide substrate is characterized in that: the composite material consists of the following components in percentage by weight:
40-65wt% of diamond abrasive;
0.1-5wt% of dispersion stabilizer;
0.1-5wt% of strong oxidant;
0.02-0.03wt% of surfactant;
1-3wt% of a wetting agent;
the balance of deionized water.
2. The diamond liquid for thinning a silicon carbide substrate according to claim 1, wherein: the diamond abrasive comprises fine grinding micro powder and group-type grinding particles, wherein the fine grinding micro powder and the group-type grinding particles are all made of diamond monocrystal micro powder.
3. The diamond liquid for thinning a silicon carbide substrate according to claim 2, wherein: the preparation method of the fine grinding micro powder comprises the following steps: mixing and stirring the diamond monocrystal micro powder and the dispersing agent solution, performing solid-liquid separation, filtering and removing impurities to obtain diamond monocrystal micro powder wet materials, and drying the diamond monocrystal micro powder wet materials to obtain the modified diamond monocrystal micro powder.
4. The diamond liquid for thinning a silicon carbide substrate according to claim 2, wherein: the preparation steps of the group-type abrasive particles comprise:
pretreating, namely, finely screening the diamond micro powder, and then pretreating the diamond micro powder by strong acid or strong alkali to obtain the diamond micro powder with the surface rich in oxygen groups;
magnetic agglomeration is prepared, feCl2.4H2O is taken as an iron source, hydrazine hydrate is taken as a precipitator and a morphology control agent, polyethylene glycol is taken as a dispersing agent and a morphology control agent, and Fe is prepared by synthesis 3 O 4 ；
Magnetic agglomeration, taking pretreated diamond micro powder as a substrate, and depositing Fe on the surface of the diamond micro powder 3 O 4 Forming a coating layer to obtain the group-type abrasive particles with magnetic polymerization.
5. The diamond liquid for thinning a silicon carbide substrate according to claim 4, wherein: the specific steps of the pretreatment include: and (3) sieving the diamond micro powder, adding the diamond micro powder into a strong alkali solution or a strong acid solution, controlling the solid-liquid ratio to be less than 1:5, stirring at a low speed for 2-6 hours or heating to a micro-boiling state and keeping for 10 minutes, washing and filtering the diamond micro powder by a suction filtration device, and finally drying to obtain the diamond micro powder with the surface rich in oxygen groups.
6. The diamond liquid for thinning a silicon carbide substrate according to claim 5, wherein: the strong alkali solution is sodium hydroxide solution with the concentration of 3mol/L, and the strong acid solution is concentrated sulfuric acid, concentrated nitric acid, and mixed acid of the concentrated sulfuric acid and the concentrated nitric acid.
7. The diamond liquid for thinning a silicon carbide substrate according to claim 4, wherein: the preparation method of the magnetic agglomerate comprises the following specific steps: 1mmol of FeCl 2 ·4H 2 Mixing O with 5 mol of hydrazine hydrate, 15ml of absolute ethyl alcohol and 10ml of distilled water, adding a dispersing agent, uniformly dispersing by adopting an ultrasonic dispersing process, regulating the PH value to 8-9, then stirring in a water bath at constant temperature for 5 hours, keeping the constant temperature at 70 ℃, separating and cleaning after stirring to obtain Fe 3 O 4 。
8. The diamond liquid for thinning a silicon carbide substrate according to claim 4, wherein: the magnetic agglomeration comprises the following specific steps: 10ml of distilled water, 15ml of absolute ethyl alcohol and 1 mmole of FeCl 2 ·4H 2 O and 5mmol hydrazine hydrate are mixed, the pretreated diamond micro powder is added for 0.36Ct for many times, then dispersing agent is added, the mixture is uniformly dispersed, the pH value of the reaction system is regulated to 8-9, and the reaction is carried out for 5 hours by water bath at 70 ℃ under uniform stirring. And after the reaction is finished, naturally cooling to room temperature, cleaning, magnetically separating, and drying in a vacuum drying oven at 25 ℃ for 24 hours to obtain the group-type grinding particles.
9. An application of diamond liquid for thinning a silicon carbide substrate is characterized in that: the diamond liquid for thinning the silicon carbide substrate according to any one of claims 1 to 8 is applied to grinding and polishing of a sapphire substrate without a resin liner, a silicon carbide substrate, sapphire glass, a ceramic mobile phone rear cover, a ceramic fingerprint identification sheet and reinforced glass.
10. The use of a diamond liquid for thinning a silicon carbide substrate according to claim 9, wherein: the specific steps of grinding and polishing are as follows: and carrying out freezing consolidation on the diamond liquid for thinning the silicon carbide substrate obtained by configuration to form a freezing consolidation polishing pad, then placing the freezing consolidation polishing pad on low-temperature polishing equipment, adding the diamond liquid for thinning the silicon carbide substrate, immersing the diamond liquid for thinning, contacting the freezing consolidation polishing pad with a workpiece to be polished, and starting the low-temperature polishing equipment for polishing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310160715.2A CN116333602A (en) | 2023-02-20 | 2023-02-20 | Diamond liquid for thinning silicon carbide substrate and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310160715.2A CN116333602A (en) | 2023-02-20 | 2023-02-20 | Diamond liquid for thinning silicon carbide substrate and application thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116970342A (en) * | 2023-08-01 | 2023-10-31 | 南京金瑞立丰硬质材料科技有限公司 | Polycrystalline diamond polishing agent for silicon carbide processing and preparation method thereof |
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2023
- 2023-02-20 CN CN202310160715.2A patent/CN116333602A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116970342A (en) * | 2023-08-01 | 2023-10-31 | 南京金瑞立丰硬质材料科技有限公司 | Polycrystalline diamond polishing agent for silicon carbide processing and preparation method thereof |
| CN116970342B (en) * | 2023-08-01 | 2024-02-02 | 南京金瑞立丰硬质材料科技有限公司 | Polycrystalline diamond polishing agent for silicon carbide processing and preparation method thereof |
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