CN1149662C - 用于制作无阻挡层的半导体存储器装置的方法 - Google Patents
用于制作无阻挡层的半导体存储器装置的方法 Download PDFInfo
- Publication number
- CN1149662C CN1149662C CNB971969477A CN97196947A CN1149662C CN 1149662 C CN1149662 C CN 1149662C CN B971969477 A CNB971969477 A CN B971969477A CN 97196947 A CN97196947 A CN 97196947A CN 1149662 C CN1149662 C CN 1149662C
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- China
- Prior art keywords
- electrode
- layer
- dielectric
- insulating barrier
- auxiliary layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003860 storage Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 49
- 230000000712 assembly Effects 0.000 title abstract 2
- 238000000429 assembly Methods 0.000 title abstract 2
- 230000008569 process Effects 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract 2
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000007772 electrode material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910015802 BaSr Inorganic materials 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19640273.5 | 1996-09-30 | ||
DE19640273A DE19640273C1 (de) | 1996-09-30 | 1996-09-30 | Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1227000A CN1227000A (zh) | 1999-08-25 |
CN1149662C true CN1149662C (zh) | 2004-05-12 |
Family
ID=7807423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971969477A Expired - Fee Related CN1149662C (zh) | 1996-09-30 | 1997-09-11 | 用于制作无阻挡层的半导体存储器装置的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6168988B1 (zh) |
EP (1) | EP0931341B1 (zh) |
JP (1) | JP3732524B2 (zh) |
KR (1) | KR100491580B1 (zh) |
CN (1) | CN1149662C (zh) |
DE (2) | DE19640273C1 (zh) |
TW (1) | TW407334B (zh) |
WO (1) | WO1998015002A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19834649C1 (de) * | 1998-07-31 | 2000-03-16 | Siemens Ag | Verfahren zum Herstellen einer Speicherzelle |
US6265280B1 (en) * | 1999-11-29 | 2001-07-24 | Chartered Semiconductor Manufacturing, Inc. | Method for manufacturing a cylindrical semiconductor capacitor |
US6323099B1 (en) * | 2000-02-02 | 2001-11-27 | Advanced Micro Devices | High k interconnect de-coupling capacitor with damascene process |
US6413832B1 (en) * | 2001-01-08 | 2002-07-02 | United Microelectronics Corp. | Method for forming inner-cylindrical capacitor without top electrode mask |
KR100390849B1 (ko) * | 2001-06-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 하프늄산화막을 구비하는 캐패시터의 제조 방법 |
US20030052365A1 (en) * | 2001-09-18 | 2003-03-20 | Samir Chaudhry | Structure and fabrication method for capacitors integratible with vertical replacement gate transistors |
JP4218350B2 (ja) * | 2002-02-01 | 2009-02-04 | パナソニック株式会社 | 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ |
TWI276802B (en) * | 2002-08-13 | 2007-03-21 | Lam Res Corp | Process endpoint detection method using broadband reflectometry |
US6638830B1 (en) * | 2002-09-18 | 2003-10-28 | United Microelectronics Corp. | Method for fabricating a high-density capacitor |
US6706588B1 (en) * | 2003-04-09 | 2004-03-16 | Infineon Technologies Ag | Method of fabricating an integrated circuit having embedded vertical capacitor |
US8524599B2 (en) * | 2011-03-17 | 2013-09-03 | Micron Technology, Inc. | Methods of forming at least one conductive element and methods of forming a semiconductor structure |
US9537093B1 (en) * | 2016-02-16 | 2017-01-03 | Macronix International Co., Ltd. | Memory structure |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2528731B2 (ja) * | 1990-01-26 | 1996-08-28 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JP2564972B2 (ja) * | 1990-06-18 | 1996-12-18 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
KR940006682B1 (ko) * | 1991-10-17 | 1994-07-25 | 삼성전자 주식회사 | 반도체 메모리장치의 제조방법 |
US5313089A (en) * | 1992-05-26 | 1994-05-17 | Motorola, Inc. | Capacitor and a memory cell formed therefrom |
JP3250257B2 (ja) * | 1992-06-09 | 2002-01-28 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
DE4222467C1 (zh) * | 1992-07-08 | 1993-06-24 | Siemens Ag, 8000 Muenchen, De | |
JP2550852B2 (ja) * | 1993-04-12 | 1996-11-06 | 日本電気株式会社 | 薄膜キャパシタの製造方法 |
JP2956482B2 (ja) * | 1994-07-29 | 1999-10-04 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
JP3152859B2 (ja) * | 1994-09-16 | 2001-04-03 | 株式会社東芝 | 半導体装置の製造方法 |
KR100416733B1 (ko) * | 1995-03-20 | 2004-07-05 | 삼성전자주식회사 | 강유전성캐패시터 |
KR0170308B1 (ko) * | 1995-12-05 | 1999-02-01 | 김광호 | 강유전체 캐패시터의 제조방법 |
TW312831B (en) * | 1996-08-16 | 1997-08-11 | United Microelectronics Corp | Manufacturing method of semiconductor memory device with capacitor(3) |
US5946569A (en) * | 1996-12-02 | 1999-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | DRAM contact process by localized etch-stop removal |
US5972769A (en) * | 1996-12-20 | 1999-10-26 | Texas Instruments Incoporated | Self-aligned multiple crown storage capacitor and method of formation |
-
1996
- 1996-09-30 DE DE19640273A patent/DE19640273C1/de not_active Expired - Fee Related
-
1997
- 1997-09-11 DE DE59705912T patent/DE59705912D1/de not_active Expired - Fee Related
- 1997-09-11 KR KR10-1999-7002505A patent/KR100491580B1/ko not_active IP Right Cessation
- 1997-09-11 EP EP97909129A patent/EP0931341B1/de not_active Expired - Lifetime
- 1997-09-11 CN CNB971969477A patent/CN1149662C/zh not_active Expired - Fee Related
- 1997-09-11 JP JP51610798A patent/JP3732524B2/ja not_active Expired - Fee Related
- 1997-09-11 WO PCT/DE1997/002032 patent/WO1998015002A1/de active IP Right Grant
- 1997-09-27 TW TW086114125A patent/TW407334B/zh not_active IP Right Cessation
-
1999
- 1999-03-30 US US09/281,691 patent/US6168988B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1998015002A1 (de) | 1998-04-09 |
DE59705912D1 (de) | 2002-01-31 |
KR20000048578A (ko) | 2000-07-25 |
US6168988B1 (en) | 2001-01-02 |
KR100491580B1 (ko) | 2005-05-27 |
TW407334B (en) | 2000-10-01 |
EP0931341B1 (de) | 2001-12-19 |
JP2001501373A (ja) | 2001-01-30 |
DE19640273C1 (de) | 1998-03-12 |
JP3732524B2 (ja) | 2006-01-05 |
EP0931341A1 (de) | 1999-07-28 |
CN1227000A (zh) | 1999-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT Effective date: 20130217 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130217 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG Effective date of registration: 20130217 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: German Neubiberg Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160111 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040512 Termination date: 20160911 |
|
CF01 | Termination of patent right due to non-payment of annual fee |