CN114038803A - 连接体、连接体的制造方法及检查方法 - Google Patents
连接体、连接体的制造方法及检查方法 Download PDFInfo
- Publication number
- CN114038803A CN114038803A CN202111204563.9A CN202111204563A CN114038803A CN 114038803 A CN114038803 A CN 114038803A CN 202111204563 A CN202111204563 A CN 202111204563A CN 114038803 A CN114038803 A CN 114038803A
- Authority
- CN
- China
- Prior art keywords
- terminals
- transparent substrate
- indentations
- input
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
- H05K1/0269—Marks, test patterns or identification means for visual or optical inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/117—Pads along the edge of rigid circuit boards, e.g. for pluggable connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29316—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29324—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29357—Cobalt [Co] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/2936—Iron [Fe] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29371—Chromium [Cr] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0108—Transparent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09918—Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/166—Alignment or registration; Control of registration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Eyeglasses (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
提高压痕的视觉辨认性,并迅速、准确地进行利用各向异性导电膜的连接工序中的连接后的检查。具备透明基板、和经由各向异性导电粘接剂连接到透明基板上的电子部件,在透明基板的端子中,各向异性导电粘接剂所含有的导电性粒子造成的多个压痕(30)在面内方向排列。
Description
本申请是如下发明专利申请的分案申请:
发明名称:连接体、连接体的制造方法及检查方法;申请号:201580010878.6;申请日:2015年2月26日。
技术领域
本发明涉及连接电子部件和透明基板的连接体,特别涉及电子部件经由含有导电性粒子的粘接剂连接到透明基板的连接体、连接体的制造方法及检查方法。本申请以2014年2月27日在日本国申请的日本专利申请号特愿2014-036743以及2015年2月24日在日本国申请的日本专利申请号特愿2015-034548为基础主张优先权,通过参照这些申请而将其引用至本申请。
背景技术
一直以来,作为电视机、PC监视器、便携电话、智能手机、便携式游戏机、平板终端、可穿戴终端、或者车载用监视器等的各种显示单元,采用液晶显示装置或有机EL面板。近年来,在这样的显示装置中,出于微小间距化、轻薄型化等的观点,采用利用各向异性导电膜(ACF:Anisotropic Conductive Film),将驱动用IC直接安装到显示面板的玻璃基板上的施工方法、或将形成驱动电路等的柔性基板直接安装于玻璃基板的施工方法。
在安装IC、柔性基板的玻璃基板,形成有多个由ITO(氧化铟锡)等构成的透明电极,在该透明电极上连接有IC、柔性基板等的电子部件。与玻璃基板连接的电子部件,在安装面对应于透明电极形成有多个电极端子,隔着各向异性导电膜热压接在玻璃基板上,从而连接电极端子和透明电极。
各向异性导电膜向粘合剂树脂中混入导电性粒子而作成膜状,在两个导体间通过加热压接而以导电性粒子取得导体间的电导通,以粘合剂树脂保持导体间的机械连接。作为构成各向异性导电膜的粘接剂,通常,会使用可靠性高的热硬化性的粘合剂树脂,但是也可以为光硬化性的粘合剂树脂或光热并用型的粘合剂树脂。
经由这样的各向异性导电膜将电子部件向透明电极连接的情况下,首先,通过未图示的临时压接单元将各向异性导电膜临时贴在玻璃基板的透明电极上。接着,经由各向异性导电膜将电子部件搭载在玻璃基板上,形成临时连接体后,通过热压接头等的热压接单元将电子部件与各向异性导电膜一起向透明电极侧加热按压。通过利用该热压接头进行的加热,各向异性导电膜起热硬化反应,由此电子部件粘接在透明电极上。
现有技术文献
专利文献
专利文献1:日本特许第4789738号公报
专利文献2:日本特开2004-214374号公报
专利文献3:日本特开2005-203758号公报。
发明内容
发明要解决的课题
此外,在利用这种各向异性导电膜的连接工序中,连接的电子部件对于连接部位的加热按压工序通常不进行合计多个安装件而大面积加热按压等。这是因为电子部件的连接部位相对于连接的电子部件面积比较小,另外,在连接部位排列了多个的电极端子(凸点)要求平行度等的缘故。
因而,在利用各向异性导电膜的连接工序中,出于提高生产性的观点,不仅要求连接工序本身的短时间化,而且还要求伴随短时间化的连接后的检查工序的迅速化。
连接后的检查是通过由电子部件的电极端子和玻璃基板的透明电极压垮导电性粒子来确认导通性得以确保的情况的工序,当迅速化时,有时通过从玻璃基板的背面观察出现在透明电极的导电性粒子的压痕的外观检查来进行。另外,作为连接后的检查,通过人们的目视、或利用摄像图像,观察压痕的状态、或其周围的粘接剂的浮标、剥离的状态。
压痕的状态是通过与不存在导电性粒子的周边部位的比较来进行的,作为机械性判断基准能通过观察对比度、颜色搭配的差异进行判断。然而,若在电极端子与透明电极之间重叠有导电性粒子,或者导电性粒子在透明电极的面内方向上连续接触或者过度接近,则影响压痕与周边部位的识别、即对比度、颜色搭配,从而视觉辨认性会变差,有可能无法进行迅速且准确的外观检查。
因此,本发明目的在于提供提高压痕的视觉辨认性,并能迅速、准确地进行利用各向异性导电膜的连接工序中的连接后的检查的连接体、连接体的制造方法及检查方法。
用于解决课题的方案
为了解决上述的课题,本发明所涉及的连接体具备:透明基板;以及经由各向异性导电粘接剂连接到上述透明基板上的电子部件,在上述透明基板的端子中,上述各向异性导电粘接剂所含有的导电性粒子造成的多个压痕在面内方向排列。
另外,本发明所涉及的连接体的制造方法,经由含有导电性粒子的粘接剂将电子部件搭载在电路基板上,将上述电子部件对上述电路基板进行按压,并且使上述粘接剂硬化,从而将上述电子部件连接在上述电路基板上,在上述连接体的制造方法中,上述各向异性导电粘接剂在粘合剂树脂中排列有导电性粒子,在上述透明基板的端子中,上述导电性粒子造成的多个压痕在面内方向排列。
另外,本发明所涉及的检查方法,检查电子部件经由排列有导电性粒子的各向异性导电粘接剂连接在透明基板上的连接体的连接状态,在上述检查方法中,比较出现在上述透明基板的端子的上述各向异性导电粘接剂所含有的导电性粒子的压痕及压痕的周边部位,检查连接状态。
发明效果
依据本发明,在端子内排列有导电性粒子,从而压痕各自以独立的状态出现。因而,出现在端子的压痕因为对比度明确显现、显著提高各个压痕的视觉辨认性而变得容易识别,能够迅速、准确地检查基于压痕的电子部件与透明基板的端子的连接性。
附图说明
图13是示出通过形成具有超过导电性粒子的粒径的50%的高低差的凹凸部的凸点和端子夹持导电性粒子的状态的截面图。
具体实施方式
以下,参照附图,对适用本发明的连接体、连接体的制造方法及检查方法进行详细说明。此外,本发明并不仅限于以下的实施方式,显然在不脱离本发明的要点的范围内能够进行各种变更。另外,附图是示意性的,各尺寸的比例等有不同于现实的情况。具体尺寸等应该参考以下的说明进行判断。另外,应当理解到附图相互之间也包含彼此尺寸的关系或比例不同的部分。
[液晶显示面板]
以下,作为适用本发明的连接体,以对玻璃基板安装液晶驱动用的IC芯片作为电子部件的液晶显示面板为例进行说明。该液晶显示面板10如图1所示,对置配置由玻璃基板等构成的两块透明基板11、12,并通过框状的密封材料13来互相粘合这些透明基板11、12。而且,液晶显示面板10通过向由透明基板11、12围绕的空间内封入液晶14而形成面板显示部15。
透明基板11、12以使由ITO(氧化铟锡)等构成的条纹状的一对透明电极16、17互相交叉的方式形成在互相对置的两内侧表面。而且,两透明电极16、17成为通过这两透明电极16、17的该交叉部位构成作为液晶显示的最小单位的像素。
两透明基板11、12之中,一个透明基板12形成为平面尺寸大于另一个透明基板11,在该形成为较大的透明基板12的边缘部12a,设有安装液晶驱动用IC18作为电子部件的安装部27。此外,如图2、图3所示,在安装部27形成有排列透明电极17的多个输入端子19a的输入端子列20a及排列多个输出端子19b的输出端子列20b、与设在液晶驱动用IC18的IC侧对准标记32重叠的基板侧对准标记31。
液晶驱动用IC18通过对像素选择性地施加液晶驱动电压,局部地改变液晶的取向,以能进行既定液晶显示。另外,如图3、图4所示,液晶驱动用IC18在对透明基板12的安装面18a,形成有排列与透明电极17的输入端子19a导通连接的多个输入凸点21a的输入凸点列22a,和排列与透明电极17的输出端子19b导通连接的多个输出凸点21b的输出凸点列22b。输入凸点21a及输出凸点21b优选采用例如铜凸点、金凸点、或者对铜凸点实施镀金的凸点等。
输入凸点21a例如沿着安装面18a的一个侧缘排成一列,输出凸点21b沿着与一个侧缘对置的另一个侧缘以交错状排成多列。输入输出凸点21a、21b和设在透明基板12的安装部27的输入输出端子19a、19b分别以同数量且同间距形成,通过对位连接透明基板12和液晶驱动用IC18,从而进行连接。
此外,输入输出凸点21a、21b的排列,除了图4所示的以外,还可为在一个侧缘排成一列或多列,在另一个侧缘排成一列或多列的任一种构成。另外,输入输出凸点21a、21b既可为排成一列的一部分为多列,也可为多列的一部分为一列。进而,输入输出凸点21a、21b既可以形成为使多列的各列平行且邻接的电极端子彼此并行的笔直排列,或者也可以形成为使多列的各列平行且邻接的电极端子彼此均匀错开的交错排列。
另外,液晶驱动用IC18也可以沿着IC基板的长边排列输入输出凸点21a、21b,并且沿着IC基板的短边形成侧凸点。此外,输入输出凸点21a、21b既可以用同一尺寸形成,也可以用不同尺寸形成。另外,输入输出凸点列22a、22b中可以使以同一尺寸形成的输入输出凸点21a、21b对称或非对称地排列,也可以使以不同尺寸形成的输入输出凸点21a、21b非对称排列。
此外,随着近年来液晶显示装置和其他电子设备的小型化、高功能化,液晶驱动用IC18等的电子部件也要求小型化、低矮化,输入输出凸点21a、21b的高度也越来越低(例如6~15μm)。
另外,液晶驱动用IC18在安装面18a形成有通过与基板侧对准标记31重叠而进行对透明基板12的对准的IC侧对准标记32。此外,由于进行透明基板12的透明电极17的布线间距或液晶驱动用IC18的输入输出凸点21a、21b的微小间距化,所以液晶驱动用IC18和透明基板12要求高精度的对准调整。
基板侧对准标记31及IC侧对准标记32能够使用通过组合能取得透明基板12与液晶驱动用IC18的对准的各种标记。
在安装部27形成的透明电极17的输入输出端子19a、19b上,作为电路连接用粘接剂使用各向异性导电膜1而连接液晶驱动用IC18。各向异性导电膜1含有导电性粒子4,使液晶驱动用IC18的输入输出凸点21a、21b和在透明基板12的安装部27形成的透明电极17的输入输出端子19a、19b,经由导电性粒子4电连接。该各向异性导电膜1因被热压接头33热压接而粘合剂树脂流动,从而导电性粒子4在输入输出端子19a、19b与液晶驱动用IC18的输入输出凸点21a、21b之间压垮,在该状态下粘合剂树脂硬化。由此,各向异性导电膜1将透明基板12和液晶驱动用IC18电气、机械地连接。
另外,在两透明电极16、17上,形成有实施了既定摩擦处理的取向膜24,以通过该取向膜24规定液晶分子的初始取向。而且,在两透明基板11、12的外侧配置有一对偏振光板25、26,以通过这两偏振光板25、26规定来自背光等的光源(未图示)的透射光的振动方向。
[各向异性导电膜]
接着,对各向异性导电膜1进行说明。如图5所示,各向异性导电膜(ACF:Anisotropic Conductive Film)1通常在成为基体材料的剥离膜2上形成含有导电性粒子4的粘合剂树脂层(粘接剂层)3。各向异性导电膜1为热硬化型或者紫外线等的光硬化型粘接剂,粘着在液晶显示面板10的在透明基板12形成的输入输出端子19a、19b上并且搭载有液晶驱动用IC18,通过用热压接头33来热加压而流动,从而导电性粒子4在相对置的透明电极17的输入输出端子19a、19b与液晶驱动用IC18的输入输出凸点21a、21b之间压垮,通过加热或者紫外线照射,在导电性粒子压垮的状态下硬化。由此,各向异性导电膜1连接透明基板12与液晶驱动用IC18,从而能够使之导通。
另外,各向异性导电膜1在含有膜形成树脂、热硬化性树脂、潜伏性硬化剂、硅烷偶联剂等的普通粘合剂树脂层3以既定图案规则排列有导电性粒子4。
支撑粘合剂树脂层3的剥离膜2,例如,在PET(聚对苯二甲酸乙二醇酯:PolyEthylene Terephthalate)、OPP(定向聚丙烯:Oriented Polypropylene)、PMP(聚4-甲基戊烯-1:Poly-4-methylpentene-1)、PTFE(聚四氟乙烯:Polytetrafluoroethylene)等上涂敷硅酮等的剥离剂而成,不仅防止各向异性导电膜1的干燥,而且维持各向异性导电膜1的形状。
作为粘合剂树脂层3中含有的膜形成树脂,优选平均分子量为10000~80000左右的树脂。作为膜形成树脂,能举出环氧树脂、改性环氧树脂、尿烷树脂、苯氧基树脂等各种树脂。其中,出于膜形成状态、连接可靠性等的观点特别优选苯氧基树脂。
作为热硬化性树脂,无特别限定,能够举出例如市售的环氧树脂、丙烯树脂等。
作为环氧树脂,无特别限定,但是能举出例如萘型环氧树脂、联苯型环氧树脂、酚醛清漆型环氧树脂、双酚型环氧树脂、芪型环氧树脂、三酚甲烷型环氧树脂、酚醛芳烷基型环氧树脂、萘酚型环氧树脂、二聚环戊二烯型环氧树脂、三苯基甲烷型环氧树脂等。这些既可以单独也可以组合2种以上而使用。
作为丙烯树脂,无特别限制,能够根据目的适宜选择丙烯化合物、液态丙烯酸酯等。能够举出例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸异丙酯、丙烯酸异丁酯、环氧丙烯酸酯、二丙烯酸乙二醇酯、二丙烯酸二乙二醇酯、三羟甲基丙烷三丙烯酸酯、二羟甲基三环葵烷二丙烯酸酯、1,4-丁二醇四丙烯酸酯、2-羟基-1,3-二丙烯酰氧基丙烷、2,2-双[4-(丙烯酰氧基甲氧基)苯基]丙烷、2,2-双[4-(丙烯酰氧基乙氧基)苯基]丙烷、二环戊烯基丙烯酸酯、三环葵基丙烯酸酯、树状(丙烯酰氧基乙基)异氰脲酸酯、尿烷丙烯酸酯、环氧丙烯酸酯等。此外,也能使用丙烯酸酯为甲基丙烯酸酯的材料。这些既可以单独使用1种,也可以并用2种以上。
作为潜伏性硬化剂,无特别限定,但是能举出例如加热硬化型、UV硬化型等的各种硬化剂。潜伏性硬化剂通常不会反应,通过根据热、光、加压等用途而选择的各种引发条件来激活,并开始反应。热活性型潜伏性硬化剂的激活方法有:以利用加热的离解反应等生成活性种(阳离子、阴离子、自由基)的方法;在室温附近稳定地分散到环氧树脂中而在高温与环氧树脂相溶/熔化,并开始硬化反应的方法;在高温熔出分子筛封入型的硬化剂并开始硬化反应的方法;利用微囊进行的熔出/硬化方法等。作为热活性型潜伏性硬化剂,有咪唑类、酰肼类、三氟化硼-胺络合物、锍盐、胺化酰亚胺、聚胺盐、双氰胺等或它们的改性物,这些既可以单独使用,也可为2种以上的混合物。其中,优选微囊型咪唑类潜伏性硬化剂。
作为硅烷偶联剂,无特别限定,但是能够举出例如环氧类、氨类、巯基/硫化物类、脲化物类等。通过添加硅烷偶联剂,提高有机材料和无机材料的界面中的粘接性。
[导电性粒子]
作为导电性粒子4,能够举出各向异性导电膜1中使用的公知的任意导电性粒子。作为导电性粒子4,能举出例如镍、铁、铜、铝、锡、铅、铬、钴、银、金等各种金属或金属合金的粒子;在金属氧化物、碳、石墨、玻璃、陶瓷、塑料等的粒子的表面镀敷金属的粒子;或者,在这些粒子的表面进一步镀敷绝缘薄膜的粒子等。在向树脂粒子的表面镀敷金属的粒子的情况下,作为树脂粒子,能举出例如环氧树脂、酚醛树脂、丙烯树脂、丙烯腈苯乙烯(AS)树脂、苯代三聚氰胺树脂、二乙烯基苯类树脂、苯乙烯类树脂等粒子。导电性粒子4的大小优选为1~10μm,但本发明不限于此。
[导电性粒子的规则排列]
各向异性导电膜1中,导电性粒子4在俯视下以既定排列图案有规则地排列,例如如图6或图7所示,以格子状且均匀地排列,或者以六方格子状排列。这样的导电性粒子4的排列距离能够适当调整。即,也可以根据排列的方向采用不同的排列距离。如后述那样,通过在俯视下有规则地排列,各向异性导电膜1与导电性粒子4随机分散的情况相比,在液晶驱动用IC18的连接后的检查中,能够提高出现在输入输出端子19a、19b的压痕30的视觉辨认性。
另一方面,在导电粒子随机分散的情况下,在导电粒子彼此连接时会成为邻接或重复这样的状态,在按压后难以识别各个导电粒子。
另外,各向异性导电膜1通过在俯视下有规则地排列,与导电性粒子4随机分散的情况相比,液晶驱动用IC18的邻接的输入输出凸点21a、21b间的空间23会微小间距化,从而端子间面积窄小化,即便导电性粒子4会以高密度填充,在液晶驱动用IC18的连接工序中,也能防止导电性粒子4的凝聚物造成的输入输出凸点21a、21b间的空间23中的凸点间短路。
另外,各向异性导电膜1中,导电性粒子4有规则地排列,从而在对粘合剂树脂层3以高密度填充的情况下,也防止导电性粒子4的凝聚造成的疏密的发生。因此,依据各向异性导电膜1,在微小间距化的输入输出端子19a、19b或输入输出凸点21a、21b中也能捕捉导电性粒子4。导电性粒子4的均匀排列图案可以任意设定。
这样的各向异性导电膜1能够通过例如在可延伸的片上涂敷粘着剂,并在其上单层排列导电性粒子4后,以期望的延伸倍率延伸该片的方法;在基板上以既定排列图案排列导电性粒子4后,对被剥离膜2支撑的粘合剂树脂层3转印导电性粒子4的方法;或者对被剥离膜2支撑的粘合剂树脂层3上,经由设有与排列图案对应的开口部的排列板而供给导电性粒子4的方法等来制造。
此外,各向异性导电膜1的形状没有特别限定,但是如图5所示能够作成例如能够卷绕到卷取轴(reel)6的长尺带形状,并切断成既定长度而使用。
另外,上述实施方式中,作为各向异性导电膜1,以将在粘合剂树脂层3规则排列导电性粒子4的热硬化性树脂组合物成形为膜状的粘接膜为例进行了说明,但本发明所涉及的粘接剂并不局限于此,可以为例如层叠仅由粘合剂树脂3构成的绝缘性粘接剂层和由规则排列导电性粒子4的粘合剂树脂3构成的导电性粒子含有层的结构。另外,各向异性导电膜1只要导电性粒子4在俯视下规则排列,则除了如图5所示那样单层排列之外,也可以使导电性粒子4遍及多个粘合剂树脂层3而排列并且俯视下规则排列。另外,各向异性导电膜1也可以在多层构成的至少一个层内以既定距离单一地分散。
[连接工序]
接着,对将液晶驱动用IC18连接到透明基板12的连接工序进行说明。首先,在透明基板12的形成有输入输出端子19a、19b的安装部27上临时贴各向异性导电膜1。接着,将该透明基板12承载于连接装置的平台上,经由各向异性导电膜1在透明基板12的安装部27上配置液晶驱动用IC18。
接着,通过加热到使粘合剂树脂层3硬化的既定温度的热压接头33,以既定压力、时间从液晶驱动用IC18上开始热加压。由此,各向异性导电膜1的粘合剂树脂层3显示流动性,从液晶驱动用IC18的安装面18a与透明基板12的安装部27之间流出,并且粘合剂树脂层3中的导电性粒子4被夹持在液晶驱动用IC18的输入输出凸点21a、21b与透明基板12的输入输出端子19a、19b之间而压垮。
其结果,通过在输入输出凸点21a、21b与输入输出端子19a、19b之间夹持导电性粒子4而电连接,在该状态下被热压接头33加热的粘合剂树脂硬化。由此,能够制造在液晶驱动用IC18的输入输出凸点21a、21b与形成在透明基板12的输入输出端子19a、19b之间确保导通性的液晶显示面板10。另外,对上述的被夹持的导电性粒子4的按压(应变),在输入输出端子19a、19b内成为压痕。
不在输入输出凸点21a、21b与输入输出端子19a、19b之间的导电性粒子4,在邻接的输入输出凸点21a、21b间的空间23中分散在粘合剂树脂中,维持着电绝缘的状态。因而,液晶显示面板10仅在液晶驱动用IC18的输入输出凸点21a、21b与透明基板12的输入输出端子19a、19b之间取得电导通。此外,作为粘合剂树脂,通过使用自由基聚合反应类的快速硬化类型的粘合剂树脂,能够使粘合剂树脂在短的加热时间内快速硬化。另外,作为各向异性导电膜1,不限于热硬化型,只要能进行加压连接,也可以使用光硬化型或光热并用型的粘接剂。
[压痕视觉辨认性]
由于导电性粒子4在与输入输出凸点21a、21b之间被按压,所以从透明基板12侧在输入输出端子19a、19b的部位能够观察到压痕30。在连接液晶驱动用IC18之后,从透明基板12的背面(输入输出端子19a、19b的相反侧)通过目视(显微镜等)或者摄像图像进行观察,能够进行连接性的检查。
压痕30是在输入输出凸点21a、21b与输入输出端子19a、19b之间捕捉硬度高的导电性粒子4的状态下用热压接头33进行按压,从而出现在透明电极17的输入输出端子19a、19b的导电性粒子4的按压痕,能够通过从透明基板12的背面侧进行观察而视觉辨认。压痕30的形状一般具有导电性粒子4的粒径以上的直径,如图8(a)所示,成为大致圆形状。另外,压痕30的形状如图8(b)所示,一般为单侧模糊而大部分由曲线构成的形状。该情况下的曲线能够识别为在设为圆形的情况下的40%以上、优选为50%以上、更优选为60%以上的、即大致圆形的曲线即可。此外,在金属粒子等情况下,有包含线性的状态的情况。
因为粒子压入的强度不同而压痕30的对比度、外径有所不同。因此,压痕成为用热压接头33进行的按压是否在各输入输出端子19a、19b间及各个输入输出端子19a、19b内均匀地按压的判定指标。
在此,在利用导电性粒子4随机分散在粘合剂树脂层3的各向异性导电膜进行连接的连接体中,如图8(c)所示,在输入输出端子上不规则地出现压痕30,并且接近、重复,因此压痕30的视觉辨认性差,掌握状态要花费工夫,因此检查需要时间,另外压痕30的判定精度会降低。即,成为难以识别形成压痕30的曲线的状态。另外,在根据机械性图像处理进行检查的情况下,由这样的视觉辨认性的好坏会难以设置判定的基准。因此,判定的精度本身会恶化。因为在该情况下,根据分辨率会被视为直线的组合。
另一方面,在本发明所涉及的液晶显示面板10中,由于利用排列导电性粒子4的各向异性导电膜1来形成,所以在输入输出端子19a、19b内,导电性粒子4也以被排列的状态夹持,如图8(a)所示,压痕30分别以独立的状态规则地出现。因而,出现在输入输出端子19a、19b的压痕30,明确地显现对比度或者形成它的曲线,从而显著提高各个压痕30的视觉辨认性。由此,液晶显示面板10能够迅速、准确检查基于压痕30的输入输出凸点21a、21b与输入输出端子19a、19b的连接性。
出现在输入输出端子19a、19b的各个压痕30,如果规则地出现,就能通过与不存在导电性粒子4的平滑面的对比度来确保视觉辨认性,因此互相邻接也可,但是优选以既定距离例如隔着外径的0.2倍以上而显现,更优选为隔着0.4倍以上而显现。此外,与上述平滑面的对比度还包含由曲线显现的情况。
这样的压痕30优选在一个输入输出端子19a、19b内独立存在55%以上,更优选为65%以上,进一步优选为75%以上。压痕30独立存在是指导电性粒子4以1个存在的情况,而不独立的情况是指邻接或重复的情况。但是,在有意使多个导电性粒子4连结并排列的情况下,视为以该单位独立。
另外,压痕30优选在图9所示的排列多个输入输出端子19a、19b的输入输出端子列20a、20b的中央的输入输出端子19aM、19bM内独立存在55%以上,更优选为65%以上,进一步优选为75%以上。此外,在输入输出端子列20a、20b排列奇数个输入输出端子19a、19b的情况下,中央的输入输出端子19aM、19bM是指该端子列的正中的端子,在输入输出端子列20a、20b排列偶数个输入输出端子19a、19b的情况下,中央的输入输出端子19aM、19bM是指该端子列的正中两个端子。
同样地,压痕30优选在图9所示的排列多个输入输出端子19a、19b的输入输出端子列20a、20b的两端的输入输出端子19aL、19aR、19bL、19bR的各端子中也独立存在55%以上,更优选为65%以上,进一步优选为75%以上。在两端的输入输出端子19aL、19aR、19bL、19bR中独立存在55%以上的压痕30,从而能推测为该输入输出端子列20a、20b的全输入输出端子19a、19b具备同样的视觉辨认性。
另外,压痕30优选在图9所示的排列多个输入输出端子19a、19b的输入输出端子列20a、20b的与中央的输入输出端子19aM、19bM邻接的输入输出端子19aMs、19bMs的各端子中也独立存在55%以上,更优选为65%以上,进一步优选为75%以上。在与中央的输入输出端子19aM、19bM邻接的输入输出端子19aMs、19bMs的各端子中独立存在55%以上的压痕30,从而能推测为不仅在该端子列的中央,而且在整个列中的输入输出端子19a、19b中,具备同样的视觉辨认性。
进而,压痕30优选在图9所示的排列多个输入输出端子19a、19b的输入输出端子列20a、20b的与两端的输入输出端子19aL、19aR、19bL、19bR邻接的输入输出端子19aLs、19aRs、19bLs、19bRs的各端子中也独立存在55%以上,更优选为65%以上,进一步优选为75%以上。在与两端的输入输出端子19aL、19aR、19bL、19bR邻接的输入输出端子19aLs、19aRs、19bLs、19bRs的各端子中独立存在55%以上的压痕30,从而能推测为不仅在该端子列的两端,而且在整个列中的输入输出端子19a、19b中,具备同样的视觉辨认性。
另外,在透明基板平行存在的输入输出端子列20a、20b的全部的输入输出端子19a、19b中,也同样,压痕30优选独立存在55%以上,更优选为65%以上,进一步优选为75%以上。通过比较平行存在的端子列彼此的压痕,还能检查热压接头33的按压面整个区域中的均匀性。
另外,在输入输出端子19a、19b中,为了确认与输入输出凸点21a、21b进行电连接的情况,压痕30优选按每个输入输出端子19a、19b出现2个以上,更优选为3个以上,进而优选为4个以上。
压痕30的至少一部分有规则地出现,因而这成为指标,从而能够同时掌握连接液晶驱动用IC18时的粘合剂树脂的、被输入输出端子19a、19b及输入输出凸点21a、21b夹持的区域中的连接状态、和邻接的输入输出凸点21a、21b的端子间空间23中的连接状态。这是因为压痕30处于视觉辨认性良好的状态,因此在输入输出端子19a、19b或其周边部位的粘合剂树脂的状态中产生浮标等时,因为该浮标等的透射性不同,会容易进行与成为指标的压痕30的比较。另外,在异物混入连接体内的情况下,规则排列也成为指标,从而会容易掌握成为不良的异物的发现和场所的确定、影响的程度。
[接近端子彼此中的压痕的排列的相同性或相似性]
另外,液晶显示面板10优选在接近的输入输出端子19a、19b彼此间压痕30的排列的一部分具有相同或相似性。由此,液晶显示面板10能够容易进行压痕30的相对比较,并且还能迅速、准确地进行检查的判定基准的设定或判定评价。特别是,在以目视进行检查的情况下,例如在相邻的输入输出端子19a、19b彼此间压痕30的排列如果呈现相同或相似性,就能容易且迅速进行彼此压痕的评价。通过重复进行,就能高精度且容易地进行按压面整个区域的掌握。
此外,排列也可以使压痕30以直线状并排,相同性是指以直线状排列的压痕以相同的排列间距或长度呈现,相似性是指以该直线状排列的压痕的排列间距或长度有变化。该情况下的直线在微小间距的输入输出端子19a、19b中,2个等以最小数形成的压痕也视为排列。相似性是指这个的距离或者间隔发生了变化。因为若成为微小间距,则被夹持的导电性粒子的排列只能视为直线、或接近直线的状态。
液晶显示面板10通过使用导电性粒子4有规则排列的各向异性导电膜1,导电性粒子4遍及接近的输入输出端子19a、19b而有规则地配置。在该状态下若用热压接头33进行加热按压,则粘合剂树脂的流动性也在接近的输入输出端子19a、19b之间成为大致相同,因此能够使压痕30的排列具有相同或相似性。
[一个端子内的压痕间距离]
另外,压痕30优选使一个输入输出端子19a、19b内的整个压痕30的压痕间距离在平均压痕间距离±30%以内,更优选为15%以内,进一步优选为7%以内。压痕间距离是指某一压痕30与接近的压痕30之中外缘间的最短距离最短的压痕30的该外缘间的最短距离,平均压痕间距离是指一个输入输出端子19a、19b内的整个压痕30的压痕间距离的平均值。由此,在本发明中的压痕30的检查工序中,还能检查一个输入输出端子19a、19b内的按压的均匀性。
即,在一个输入输出端子19a、19b内,如果整个压痕30的压痕间距离为平均压痕间距离±30%以内,则对导电性粒子4施加的按压力也会大致均匀,输入输出凸点21a、21b和输入输出端子19a、19b会被平行按压,认为各输入输出端子19a、19b的导通电阻的偏差也较少。另一方面,在一个输入输出端子19a、19b内,若整个压痕30的压痕间距离超过平均压痕间距离±30%,则认为输入输出凸点21a、21b和输入输出端子19a、19b没有被平行按压,并且认为各输入输出端子19a、19b间的导通电阻的偏差较大。
[一个端子列内中的按压的均匀性]
另外,压痕30优选使一个输入输出端子19a、19b内的平均压痕间距离与排列该输入输出端子19a、19b的端子列的中央的输入输出端子19aM、19bM中的平均压痕间距离之差在±30%以内,更优选为15%以内,进一步优选为7%以内。由此,在本发明中的压痕30的检查工序中,还能检查一个输入输出端子列20a、20b内的按压的均匀性。此外,在输入输出端子列20a、20b排列奇数个输入输出端子19a、9b的情况下,中央的输入输出端子19aM、19bM是指该端子列的正中的端子,在输入输出端子列20a、20b排列偶数个输入输出端子19a、9b的情况下,中央的输入输出端子19aM、19bM是指该端子列的正中两个端子。
即,输入输出端子列20a、20b不仅在液晶驱动用IC18或透明基板12被平行按压的情况下,而且在产生翘曲的情况下,中央的输入输出端子19aM、19bM也最容易被按压,因此压痕的视觉辨认性也最容易显现,从而成为测量该端子列的按压的均匀性的基准。
而且,如果一个输入输出端子19a、19b的平均压痕间距离与输入输出端子列20a、20b的中央的输入输出端子19aM、19bM中的平均压痕间距离之差在±30%以内,则在该输入输出端子19a、19b中,施加在导电性粒子4的按压力也会与端子列中央的输入输出端子19aM、19bM大致相同,认为输入输出凸点21a、21b被平行按压,与其他输入输出端子19a、19b的导通电阻的偏差也较少。另一方面,若一个输入输出端子19a、19b的平均压痕间距离与输入输出端子列20a、20b的中央的输入输出端子19aM、19bM中的平均压痕间距离之差超过±30%,则认为在该端子列中输入输出凸点21a、21b与该输入输出端子19a、19b没有被平行按压,并认为各输入输出端子19a、19b间的导通电阻的偏差较大。该情况下的导通电阻的偏差还包含可靠性实验等的老化时的影响。
进而,在透明基板12平行存在的输入输出端子列20a、20b的各输入输出端子19a、19b中,也同样如此,压痕30优选使一个输入输出端子19a、19b内的整个压痕30的压痕间距离在平均压痕间距离的±30%以内,更优选为15%以内,进一步优选为7%以内。另外,在透明基板12平行存在的输入输出端子列20a、20b中,也优选使一个输入输出端子19a、19b内的平均压痕间距离与排列该输入输出端子19a、19b的输入输出端子列20a、20b的中央的输入输出端子19aM、19bM中的平均压痕间距离之差在±30%以内,更优选为15%以内,进一步优选为7%以内。这样,通过比较平行存在的端子列彼此的压痕,还能检查按压面整个区域的均匀性。
[凹凸部]
在此,液晶驱动用IC18的输入输出凸点21a、21b也可以在捕捉导电性粒子4的表面设有具有导电性粒子4的粒径的50%以内的高低差的凹凸部28。如图10、图11所示,凹凸部28例如利用捕捉导电性粒子4的表面的两侧缘、或者中央部突出而形成。另外,凹凸部28的高低差设为在输入输出凸点21a、21b的表面最高的凸部28a与最低的凹部28b之差。
而且,凹凸部28将高低差设为按压前的导电性粒子4的粒径的50%以内。通过使高低差为导电性粒子4的粒径的50%以内,在由凹部28b捕捉导电性粒子4的情况下,也在该凹部28b中充分地压入导电性粒子4,并且也不会使凸部28a直接抵接到输入输出端子19a、19b。因此,输入输出凸点21a、21b和输入输出端子19a、19b通过夹持导电性粒子4而导通连接,根据连接后的环境变化也能确保良好的导通可靠性。此外,通过在输入输出凸点21a、21b的表面设置具有导电性粒子4的粒径的50%以内的高低差的凹凸部28,在输入输出端子19a、19b中压痕的视觉辨认性也没有特别影响,能够确保良好的视觉辨认性。
另一方面,若凹凸部28的高低差超过按压前的导电性粒子4的粒径的50%,则如图12、图13所示,在由凹部28b捕捉导电性粒子4的情况下,导电性粒子4的压入会不够从而招致导通电阻的上升,并且因为凸部28a直接抵接到输入输出端子19a、19b,对于连接后的输入输出凸点21a、21b与输入输出端子19a、19b的距离变化的跟踪性会较低,有可能会损害导通可靠性。此外,关于图12中的导电性粒子4,作为由输入输出凸点21a、21b的凹部28b补足的情况的一个例子,还说明了在凹部28b侧陷入的状态。因输入输出凸点21a、21b的材质偏差而硬度出现偏差,在压接工序中导电性粒子4会陷入输入输出凸点21a、21b。在该情况下,对于连接后的输入输出凸点21a、21b与输入输出端子19a、19b的距离变化的跟踪性变低,可以说有可能会损害导通可靠性。
实施例
[第1实施例]
接着,对本发明的第1实施例进行说明。在第1实施例中,利用导电性粒子有规则排列的各向异性导电膜和导电性粒子随机分散的各向异性导电膜,作成向评价用玻璃基板连接评价用IC的连接体样品,分别评价出现在评价用玻璃基板的端子的压痕的个数及独立性,并且测定了初始导通电阻、邻接的IC凸点间的短路发生率。
[各向异性导电膜]
评价用IC的连接所使用的各向异性导电膜的粘合剂树脂层,通过调整在溶剂中加入苯氧基树脂(商品名:YP50,新日铁化学公司制)60质量份、环氧树脂(商品名:jER828,三菱化学公司制)40质量份、阳离子类硬化剂(商品名:SI-60L,三新化学工业公司制)2质量份的粘合剂树脂组合物,并将该粘合剂树脂组合物涂敷在剥离膜上、烧成而形成。
[导通电阻测定用的评价用IC]
作为导通电阻测定用的评价元件,使用了外形:0.7mm×20mm、厚度0.2mm;凸点(Au-plated):宽度15μm×长度100μm、高度12μm的评价用IC。
[IC凸点间短路测定用的评价用IC]
作为IC凸点间短路测定用的评价元件,使用了外形:0.7mm×20mm、厚度0.2mm;凸点(Au-plated):宽度15μm×长度100μm、高度12μm;凸点间空间宽度:7.5μm的评价用IC。
[评价用玻璃基板]
作为连接有用于导通电阻测定的评价用IC及用于IC凸点间短路测定的评价用IC的评价用玻璃基板,使用了外形为30mm×50mm、厚度0.5mm、形成有排列多个与用于导通电阻测定的评价用IC的凸点同尺寸同间距的端子的端子列的ITO图案玻璃。
在该评价用玻璃基板临时贴上各向异性导电膜后,进行IC凸点与基板电极的对准的同时搭载评价用IC,利用热压接头在180℃、80MPa、5sec的条件下进行热压接,从而作成了连接体样品。关于各连接体样品,测定了出现在评价用玻璃基板的端子的压痕的个数及独立性、初始导通电阻、邻接的IC凸点间的短路发生率。
关于出现在评价用玻璃基板的端子的压痕的独立性,对于连接用于导通电阻测定的评价用IC的各连接体样品,从评价用玻璃基板的背面观察出现多个压痕的端子,计测了计数1000个压痕时的未独立的压痕的数量。
另外,通过目视以及用图像处理机(WinRoof:三谷商事公司制)对摄影图像进行处理来计数评价用玻璃基板的出现在1个端子内的压痕的个数,分别求出基板电极50个的平均。
另外,为了确认评价用IC是否被均匀按压,如图9所示,对于两个输出端子列20b之中,外侧的输出端子列20b的中央的输出端子19bM、与中央的输出端子19bM邻接的输出端子19bMs、两端的输出端子19bL、19bR、与两端的输出端子19bL、19bR邻接的输出端子19bLs、19bRs,评价出现在各端子内的压痕的75%以上是否具有独立性。如果列的中央的端子19bM和列的两端的端子19bL、19bR被相同按压,就能视为同列中的其他端子也大致被相同按压。另外,如果与列的中央的端子19bM邻接的端子19bMs和与端子列的两端的端子邻接的端子19bLs、19bRs被相同按压,就能评价为均匀性更高。这是简易的检查方法的一个例子。
此外,外侧的输出端子列20b的输出端子数为偶数,关于中央的端子在正中的2个输出端子进行测定,电极列的两端的端子、与两端的端子邻接的端子、及与中央的端子邻接的端子的各部分的观测面积相同。
另外,导通电阻在连接初始及可靠性实验后测定,将初始导通电阻为1.0Ω以下、可靠性实验后的导通电阻为6Ω以下评价为良好。可靠性实验的条件为85℃、85%RH、500hr。另外,关于IC凸点间的短路发生率,将50ppm以下评价为良好。
[实施例1]
实施例1中,使用了导电性粒子在粘合剂树脂层中有规则排列的各向异性导电膜。实施例1中使用的各向异性导电膜,通过在可延伸的片上涂敷粘着剂,并将导电性粒子以格子状且均匀地单层排列在其上后,使该片以期望的延伸倍率延伸的状态下,层压粘合剂树脂层而制造。所使用的导电性粒子(商品名:AUL704,积水化学工业公司制)粒径为4μm,且连接前的粒子间距离为0.5μm、粒子个数密度为28000个/mm2。
[实施例2]
实施例2中,除了使用连接前的粒子间距离为1μm、粒子个数密度为16000个/mm2的各向异性导电膜之外,采用与实施例1相同的条件。
[实施例3]
实施例3中,除了使用连接前的粒子间距离为1.5μm、粒子个数密度为10500个/mm2的各向异性导电膜之外,采用与实施例1相同的条件。
[实施例4]
实施例4中,除了使用连接前的粒子间距离为3μm、粒子个数密度为5200个/mm2的各向异性导电膜之外,采用与实施例1相同的条件。
[实施例5]
实施例5中,除了使用采用粒径为3μm的导电性粒子(商品名:AUL703,积水化学工业公司制)、连接前的粒子间距离为0.5μm、粒子个数密度为50000个/mm2的各向异性导电膜之外,采用与实施例1相同的条件。
[比较例1]
比较例1中,使用了向粘合剂树脂组合物中加入导电性粒子而调制,涂敷在剥离膜上并加以烧成,从而使导电性粒子随机分散在粘合剂树脂层的各向异性导电膜。所使用的导电性粒子(商品名:AUL704,积水化学工业公司制)粒径为4μm,且粒子个数密度为100000个/mm2。
[比较例2]
比较例2中,除了粒子个数密度为60000个/mm2之外,采用与比较例1相同的条件。
[表1]
如表1所示,在比较例1及比较例2所涉及的连接体样品中,在1000个压痕之内,有104个(比较例1)、232个(比较例2)这样至少10%以上的压痕邻接或者重复,可说视觉辨认性差。另一方面,在实施例1~5所涉及的连接体样品中,邻接或者重复比各比较例少2位,因此可说视觉辨认性良好。此外,无论是实施例还是比较例都有压痕的独立性与导电性粒子的个数密度成比例而恶化的倾向。
另外,若根据目视和图像处理机比较1个端子内的压痕个数,则在各比较例中其差值较大,而在各实施例中其差值较小。这认为是因为比较例中压痕的邻接或重复等而各个压痕的独立性较低,会将多个压痕计数为1个,所以识别性较差。另一方面,在实施例中压痕几乎没有邻接或重复,因此在目视和图像处理机中不会出现差异。因此,可知各个压痕的识别容易且精度良好。
另外,关于在端子列的中央的端子、与中央的端子邻接的端子、两端的端子、与两端的端子邻接的端子的各端子内出现的各个压痕的75%以上是否具有独立性,在比较例中都未能得到在任一种端子中具有独立性的各个压痕为75%以上的容易识别的状态,而在实施例中能得到在所有的端子中具有独立性的各个压痕为75%以上的容易识别的状态。
这些实施例所涉及的连接体样品,初始导通电阻及可靠性实验后的导通电阻都为1Ω以下,另外,IC凸点间短路的发生率也为50ppm以下。即,依据实施例所涉及的连接体样品,通过检查设在端子列的中央部及两端部的4~8个端子中的压痕,可知能够确认该端子列中的按压的均匀性。
此外,在各实施例所涉及的连接体样品中,对于在与观察压痕的独立性的端子列平行、并与形成观察该压痕的独立性的端子列的基板侧缘相反侧的侧缘形成的端子列(输入端子列20a)也同样进行观察的结果,同样地,在端子列的中央的端子、与中央的端子邻接的端子、两端的端子、与两端的端子邻接的端子的各端子内出现的压痕的75%以上具有独立性。即,可知各实施例所涉及的连接体样品在评价用IC的按压部位整个区域能得到按压的均匀性。
[第2实施例]
接着,对本发明的第2实施例进行说明。在第2实施例中,利用导电性粒子规则排列的各向异性导电膜、和导电性粒子随机分散的各向异性导电膜,并且利用在凸点表面形成具有导电性粒子的粒径的50%以内的高低差的凹凸部的评价用IC作成连接体样品,分别评价出现在评价用玻璃基板的端子的压痕的个数及独立性,并且测定了初始及可靠性实验后的导通电阻、邻接的IC凸点间的短路发生率。
第2实施例中使用的评价用IC,除了用于导通电阻测定、用于IC凸点间短路测定的都在输入输出凸点表面形成具有导电性粒子的粒径的50%以内的高低差的凹凸部之外,与在第1实施例中使用的相同。另外,各向异性导电膜及评价用玻璃基板与在第1实施例中使用的相同。
另外,出现在评价用玻璃基板的端子的压痕的个数及独立性的评价位置及评价基准也与第1实施例相同。此外,在第2实施例中,通过目视来计数评价用玻璃基板的1个端子内出现的压痕的个数。另外,导通电阻及IC凸点间的短路发生率的评价基准、可靠性实验的条件也与第1实施例相同。
[实施例6~10]
在实施例6使用实施例1中使用的各向异性导电膜,在实施例7使用实施例2中使用的各向异性导电膜,在实施例8使用实施例3中使用的各向异性导电膜,在实施例9使用实施例4中使用的各向异性导电膜,在实施例10使用实施例5中使用的各向异性导电膜。
[比较例3、4]
另外,在比较例3使用比较例1中使用的各向异性导电膜,在比较例4使用比较例2中使用的各向异性导电膜。
[表2]
如表2所示,在利用凸点表面形成具有导电性粒子的粒径的50%以内的高低差的凹凸部的评价用IC的情况下,也出现与第1实施例同样的倾向。即,在比较例3及比较例4所涉及的连接体样品中,在1000个压痕之内,有121个(比较例3)、265个(比较例4)这样至少10%以上的压痕邻接或者重复,可说视觉辨认性差。另一方面,在实施例6~10所涉及的连接体样品中,邻接或者重复比各比较例少1位以上,因此可说视觉辨认性良好。此外,无论实施例还是比较例都有压痕的独立性与导电性粒子的个数密度成比例而恶化的倾向。
另外,关于在端子列的中央的端子、与中央的端子邻接的端子、两端的端子、与两端的端子邻接的端子的各端子内出现的各个压痕的75%以上是否具有独立性,在比较例中都未能得到在任一种端子中具有独立性的各个的压痕为75%以上的容易识别的状态,而在实施例中能得到在所有的端子中具有独立性的各个压痕为75%以上的容易识别的状态。
这些实施例所涉及的连接体样品,初始导通电阻及可靠性实验后的导通电阻都为1Ω以下,另外,IC凸点间短路的发生率也为50ppm以下。即,依据实施例所涉及的连接体样品,通过检查设在端子列的中央部及两端部的4~8个端子中的压痕,可知能够确认该端子列中的按压的均匀性。
此外,与表1的比较例2相比,比较例4在导电性粒子随机分散在粘合剂树脂中这一点相同,但是IC凸点间短路发生率明显不同。可知在导电性粒子随机的情况下,由于导电性粒子不均匀而IC凸点间短路发生率出现偏差。即,由此也能知道,由于导电性粒子规则排列,所以能够抑制IC凸点间短路发生率。
此外,在各实施例所涉及的连接体样品中,对于在与观察压痕的独立性的端子列平行、并与形成观察该压痕的独立性的端子列的基板侧缘相反侧的侧缘形成的端子列(输入端子列20a)也同样进行观察的结果,同样地,在端子列的中央的端子、与中央的端子邻接的端子、两端的端子、与两端的端子邻接的端子的各端子内出现的压痕的75%以上具有独立性。即,可知各实施例所涉及的连接体样品在评价用IC的按压部位整个区域能得到按压的均匀性。
标号说明
1 各向异性导电膜;2 剥离膜;3 粘合剂树脂层;4 导电性粒子;6 卷取轴;10 液晶显示面板;11、12 透明基板;12a 边缘部;13 密封材料;14 液晶;15 面板显示部;16、17透明电极;18 液晶驱动用IC;18a 安装面;19a 输入端子;19b 输出端子;20a 输入端子列;20b 输出端子列;21a 输入凸点;21b 输出凸点;22a 输入凸点列;22b 输出凸点列;23 端子间空间;27 安装部;31 基板侧对准标记;32 IC侧对准标记;23 端子间空间;33 热压接头。
Claims (13)
1.一种检查方法,通过外观检查来检查电子部件经由排列有导电性粒子的各向异性导电粘接剂连接在透明基板上的连接体的连接状态,在上述检查方法中,
比较出现在上述透明基板的端子的上述各向异性导电粘接剂所含有的导电性粒子的压痕及压痕的周边部位,识别形成上述压痕的曲线来检查连接状态,
上述压痕在上述透明基板的端子内不重复,以各自独立的状态规则出现。
2.如权利要求1所述的检查方法,其中,
通过目视进行上述检查。
3.如权利要求1或2所述的检查方法,其中,
上述透明基板具有排列有上述端子的端子列,
检查上述端子列的中央的端子内的压痕。
4.如权利要求1或2所述的检查方法,其中,
上述透明基板具有排列有上述端子的端子列,
检查上述端子列的两端的端子内的压痕。
5.如权利要求1或2所述的检查方法,其中,
上述透明基板具有排列有上述端子的端子列,
检查上述端子列的、与中央的端子邻接的端子内的压痕。
6.如权利要求1或2所述的检查方法,其中,
上述透明基板具有排列有上述端子的端子列,
检查上述端子列的、与两端的端子邻接的端子内的压痕。
7.如权利要求1或2所述的检查方法,其中,
一个端子内55%以上的压痕独立存在。
8.如权利要求1或2所述的检查方法,其中,
上述端子内的压痕的与最接近的其他压痕的外缘间的距离之差为同一端子内的平均距离±30%以内。
9.一种连接体的制造方法,经由含有导电性粒子的粘接剂将电子部件搭载在透明基板上,
将上述电子部件对上述透明基板按压,并且使上述粘接剂硬化,从而将上述电子部件连接在上述透明基板上,在上述连接体的制造方法中,
上述粘接剂在粘合剂树脂中排列有导电性粒子,
具有比较出现在上述透明基板的端子的上述粘接剂所含有的导电性粒子的压痕及压痕的周边部位,识别形成上述压痕的曲线而通过外观检查来检查上述电子部件和上述透明基板的连接状态的工序,
上述压痕在上述透明基板的端子内不重复,以各自独立的状态规则出现。
10.如权利要求9所述的连接体的制造方法,其中,
通过目视进行上述检查。
11.一种连接体,其中具备:
透明基板;以及
经由各向异性导电粘接剂连接到上述透明基板上的电子部件,
在上述透明基板的端子,上述各向异性导电粘接剂所含有的导电性粒子造成的多个压痕在面内方向排列,
上述压痕在上述透明基板的端子内不重复,以各自独立的状态规则出现,并且具有这样的视觉辨认性:通过目视与上述压痕的周边部位进行比较来识别形成上述压痕的曲线,从而能够检查上述电子部件和上述透明基板的连接状态,
上述透明基板具有排列有上述端子的端子列,上述压痕在上述端子列内的全部端子中具有同样的视觉辨认性。
12.如权利要求11所述的连接体,其中,
上述压痕包括设为圆形的情况下的40%以上的曲线。
13.如权利要求11或12所述的连接体,其中,
具有通过目视能够进行上述检查。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-036743 | 2014-02-27 | ||
JP2014036743 | 2014-02-27 | ||
JP2015-034548 | 2015-02-24 | ||
JP2015034548A JP2015179831A (ja) | 2014-02-27 | 2015-02-24 | 接続体、接続体の製造方法及び検査方法 |
CN201580010878.6A CN106170852A (zh) | 2014-02-27 | 2015-02-26 | 连接体、连接体的制造方法及检查方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580010878.6A Division CN106170852A (zh) | 2014-02-27 | 2015-02-26 | 连接体、连接体的制造方法及检查方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114038803A true CN114038803A (zh) | 2022-02-11 |
Family
ID=54009106
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111204563.9A Pending CN114038803A (zh) | 2014-02-27 | 2015-02-26 | 连接体、连接体的制造方法及检查方法 |
CN201580010878.6A Pending CN106170852A (zh) | 2014-02-27 | 2015-02-26 | 连接体、连接体的制造方法及检查方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580010878.6A Pending CN106170852A (zh) | 2014-02-27 | 2015-02-26 | 连接体、连接体的制造方法及检查方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9980375B2 (zh) |
JP (2) | JP2015179831A (zh) |
KR (2) | KR102519281B1 (zh) |
CN (2) | CN114038803A (zh) |
TW (1) | TWI643273B (zh) |
WO (1) | WO2015129792A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102513996B1 (ko) * | 2016-03-15 | 2023-03-24 | 삼성디스플레이 주식회사 | 표시 장치 |
CN109168250B (zh) * | 2018-10-24 | 2020-04-17 | 合肥鑫晟光电科技有限公司 | 一种电路板及其制作方法、使用方法、显示装置 |
US11217557B2 (en) * | 2019-05-14 | 2022-01-04 | Innolux Corporation | Electronic device having conductive particle between pads |
CN111179750A (zh) * | 2019-12-12 | 2020-05-19 | 武汉华星光电技术有限公司 | 显示面板的结构和其制作方法 |
JP7518986B1 (ja) | 2024-03-28 | 2024-07-18 | シチズンマイクロ株式会社 | エンコーダ付きモータ |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2596960B2 (ja) * | 1988-03-07 | 1997-04-02 | シャープ株式会社 | 接続構造 |
JP4115832B2 (ja) | 2002-12-27 | 2008-07-09 | 東芝松下ディスプレイテクノロジー株式会社 | 半導体素子及び液晶表示パネル |
KR101051013B1 (ko) | 2003-12-16 | 2011-07-21 | 삼성전자주식회사 | 구동 칩 및 이를 갖는 표시장치 |
CN100416343C (zh) * | 2004-01-21 | 2008-09-03 | 友达光电股份有限公司 | 增加金属连线可靠度的结构 |
JP3976740B2 (ja) * | 2004-02-16 | 2007-09-19 | テクノス株式会社 | 基板検査装置及び検査方法 |
CN100489630C (zh) * | 2005-03-08 | 2009-05-20 | 友达光电股份有限公司 | 导电凸块和显示面板 |
CN100492627C (zh) * | 2005-10-24 | 2009-05-27 | 财团法人工业技术研究院 | 芯片结构、芯片封装结构及其工艺 |
JP4789738B2 (ja) | 2006-07-28 | 2011-10-12 | 旭化成イーマテリアルズ株式会社 | 異方導電性フィルム |
JP2008210908A (ja) * | 2007-02-26 | 2008-09-11 | Tokai Rubber Ind Ltd | 電子部品の実装方法 |
JP4922800B2 (ja) * | 2007-03-19 | 2012-04-25 | 株式会社東芝 | 電子機器の製造方法 |
JP4880533B2 (ja) * | 2007-07-03 | 2012-02-22 | ソニーケミカル&インフォメーションデバイス株式会社 | 異方性導電膜及びその製造方法、並びに接合体 |
JP4631889B2 (ja) * | 2007-09-03 | 2011-02-16 | 日立化成工業株式会社 | 接続部材および該接続部材を用いた電極の接続構造並びに接続方法 |
KR101193757B1 (ko) * | 2007-09-20 | 2012-10-23 | 소니 케미카루 앤드 인포메이션 디바이스 가부시키가이샤 | 이방성 도전막 및 그 제조 방법, 및 그 이방성 도전막을 이용한 접합체 |
JP5622137B2 (ja) * | 2007-10-29 | 2014-11-12 | デクセリアルズ株式会社 | 電気的接続体及びその製造方法 |
JP5145110B2 (ja) * | 2007-12-10 | 2013-02-13 | 富士フイルム株式会社 | 異方導電性接合パッケージの製造方法 |
JP4814277B2 (ja) * | 2008-04-18 | 2011-11-16 | ソニーケミカル&インフォメーションデバイス株式会社 | 接合体、該接合体の製造方法、及び該接合体に用いられる異方性導電膜 |
JP5307617B2 (ja) | 2009-04-27 | 2013-10-02 | 三菱電機株式会社 | 基板の実装状態検査方法および基板の実装状態検査装置 |
JP2011233624A (ja) * | 2010-04-26 | 2011-11-17 | Mitsubishi Electric Corp | 半導体素子及び該半導体素子を備える電子機器 |
JP6002500B2 (ja) | 2011-08-05 | 2016-10-05 | 積水化学工業株式会社 | 接続構造体の製造方法 |
CN103988289A (zh) * | 2011-12-16 | 2014-08-13 | 旭化成电子材料株式会社 | 带各向异性导电薄膜的半导体芯片、带各向异性导电薄膜的半导体晶片、以及半导体装置 |
JP5209778B2 (ja) * | 2011-12-27 | 2013-06-12 | デクセリアルズ株式会社 | 異方性導電膜及びこれを用いた接合体 |
-
2015
- 2015-02-24 JP JP2015034548A patent/JP2015179831A/ja active Pending
- 2015-02-26 US US15/119,195 patent/US9980375B2/en active Active
- 2015-02-26 CN CN202111204563.9A patent/CN114038803A/zh active Pending
- 2015-02-26 KR KR1020227025108A patent/KR102519281B1/ko active IP Right Grant
- 2015-02-26 WO PCT/JP2015/055548 patent/WO2015129792A1/ja active Application Filing
- 2015-02-26 KR KR1020167023122A patent/KR102424343B1/ko active IP Right Grant
- 2015-02-26 CN CN201580010878.6A patent/CN106170852A/zh active Pending
- 2015-02-26 TW TW104106244A patent/TWI643273B/zh active
-
2019
- 2019-07-23 JP JP2019135412A patent/JP6959303B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20160127000A (ko) | 2016-11-02 |
KR102519281B1 (ko) | 2023-04-10 |
WO2015129792A1 (ja) | 2015-09-03 |
JP2015179831A (ja) | 2015-10-08 |
TWI643273B (zh) | 2018-12-01 |
KR102424343B1 (ko) | 2022-07-25 |
CN106170852A (zh) | 2016-11-30 |
JP2019186577A (ja) | 2019-10-24 |
KR20220106239A (ko) | 2022-07-28 |
US20170013717A1 (en) | 2017-01-12 |
US9980375B2 (en) | 2018-05-22 |
TW201603149A (zh) | 2016-01-16 |
JP6959303B2 (ja) | 2021-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10373927B2 (en) | Connection body and method of manufacturing connection body | |
CN108476591B (zh) | 连接体、连接体的制造方法、检测方法 | |
JP6959303B2 (ja) | 接続体、接続体の製造方法及び検査方法 | |
CN106415937B (zh) | 连接体及连接体的制造方法 | |
CN105917529B (zh) | 连接体、连接体的制造方法、连接方法、各向异性导电粘接剂 | |
TWI645480B (zh) | Connector, method of manufacturing the connector, electronic device | |
TW201535017A (zh) | 對準方法、電子零件之連接方法、連接體之製造方法、連接體、異向性導電膜 | |
JP7369756B2 (ja) | 接続体及び接続体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 40068542 Country of ref document: HK |