TWI645480B - Connector, method of manufacturing the connector, electronic device - Google Patents

Connector, method of manufacturing the connector, electronic device Download PDF

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Publication number
TWI645480B
TWI645480B TW104103512A TW104103512A TWI645480B TW I645480 B TWI645480 B TW I645480B TW 104103512 A TW104103512 A TW 104103512A TW 104103512 A TW104103512 A TW 104103512A TW I645480 B TWI645480 B TW I645480B
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Taiwan
Prior art keywords
conductive particles
electrode
substrate
electrode terminal
connector
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Application number
TW104103512A
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English (en)
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TW201546920A (zh
Inventor
猿山賢一
阿久津恭志
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日商迪睿合股份有限公司
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Publication of TW201546920A publication Critical patent/TW201546920A/zh
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Publication of TWI645480B publication Critical patent/TWI645480B/zh

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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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Abstract

本發明即便導電性粒子嚙入於基板電極與電極端子之階部間，亦充分地將夾持於基板電極及電極端子之各主面部的導電性粒子壓入，確保導通性。
電子零件18經由異向性導電接著劑1連接於電路基板12，電路基板12之基板電極17a及電子零件18之電極端子19於各側緣部形成有相互結合之階部27、28，基板電極17a及電極端子19於各主面部間及階部27、28間夾持有導電性粒子4，導電性粒子4與階部27、28滿足(1)a+b+c≦0.8D。
[a：電極端子之階部高度，b：基板電極之階部高度，c：階部間間隙，D：導電性粒子之直徑]

Description

連接體、連接體之製造方法、電子機器
本發明係關於一種連接有電子零件及電路基板之連接體，尤其是關於一種電子零件經由含有導電性粒子之接著劑連接於電路基板之連接體。本申請案係以2014年2月3日於日本提出申請之日本專利申請號特願2014-018532為基礎而主張優先權者，藉由參照該申請案而引用於本申請案中。
自先前以來，作為電視或PC顯示器、行動電話或智慧型手機、攜帶型遊戲機、平板終端或可佩戴式終端、或者車載用顯示器等各種顯示手段，一直使用液晶顯示裝置或有機EL面板。近年來，關於此種顯示裝置，就微距化、輕量薄型化等觀點而言，一直採用將驅動用IC直接安裝於顯示面板的玻璃基板上之所謂COG(chip on glass，玻璃覆晶)。
例如於採用COG安裝方式之液晶顯示面板中，如圖7(A)(B)所示，於由玻璃基板等構成之透明基板101上形成有複數個由ITO(銦錫氧化物)等構成之透明電極102，於該等透明電極102上連接有液晶驅動用IC103等電子零件。液晶驅動用IC103係藉由在安裝面上對應透明電極102形成複數個電極端子104，並經由異向性導電膜105熱壓接於透明基板101上，而使電極端子104與透明電極102連接。
異向性導電膜105係於黏合劑樹脂中混入導電性粒子而製 成膜狀者，藉由被加熱壓接於2個導體間，而以導電性粒子獲得導體間之電性導通，利用黏合劑樹脂保持導體間之機械連接。作為構成異向性導電膜105之接著劑，通常使用可靠性高之熱硬化性黏合劑樹脂，亦可為光硬化性黏合劑樹脂或光熱併用型黏合劑樹脂。
於經由此種異向性導電膜105將液晶驅動用IC103連接於透明電極102之情形時，首先，藉由未圖示之預壓接手段將異向性導電膜105暫時貼附於透明基板101之透明電極102上。繼而，經由異向性導電膜105將液晶驅動用IC103搭載於透明基板101上，形成預連接體，其後藉由熱壓頭106等熱壓接手段將液晶驅動用IC103與異向性導電膜105一併加熱推壓至透明電極102側。藉由利用該熱壓頭106之加熱，異向性導電膜105發生熱硬化反應，藉此，液晶驅動用IC103被接著於透明電極102上。
[專利文獻1]日本專利第4789738號公報
[專利文獻2]日本特開2004-214374號公報
[專利文獻3]日本特開2005-203758號公報
隨著近年來之液晶顯示裝置、此外電子機器之小型化、高精細化，正推進電路基板之配線間距或電子零件之電極端子之微距化。於使用異向性導電膜將IC晶片等電子零件COG連接於經微距化之電路基板上之情形時，為了於經狹小化之電極端子與基板電極之間確實地捕捉導電性粒子，並且防止於經狹小化之電極端子間因導電性粒子連接而引起之端子間短路，而使用高密度地填充有直徑小之導電性粒子之異向性導電膜。
又，為了防止物理損傷或短路等，電路基板於基板表面形成 有保護膜。並且，形成於基板表面之基板電極於側緣部形成有由生成保護膜所形成之階部。又，於IC晶片等電子零件，亦於金屬製電極端子之側緣部形成有階部。藉此，基板電極及電極端子呈階部於平坦之主面部的周圍***之形狀。
於將電子零件連接於電路基板上時，基板電極之階部與電極端子之階部結合而連接。此時，若導電性粒子存在於基板電極之階部與電極端子之階部間，則有如下之虞：由於兩階部間嚙入導電性粒子，故於基板電極及電極端子之各主面部間，無法充分地壓碎導電性粒子，有損導通性。又，基板電極之階部由於藉由保護膜而形成，故導電性低，無法藉由嚙入於兩階部間之導電性粒子確保導通性。而且，若導電性粒子被小直徑化，則由導電性粒子嚙入於基板電極及電極端子之各階部間而引起之導電性粒子之壓入不足表現得更顯著。
又，應對於電路基板之配線間距或電子零件之電極端子之微距化，亦提出有使導電性粒子規則地排列之異向性導電膜，但存在如下情況：藉由使導電性粒子規則地排列，可於基板電極及電極端子之各主面部確實地捕捉導電性粒子，另一方面，於各階部間亦容易發生導電性粒子之嚙入。
因此，本發明之目的在於提供一種電路基板與電子零件之連接體，即便於導電性粒子已嚙入於基板電極之階部與電極端子之階部間的情形時，亦可充分地壓入夾持於基板電極及電極端子之各主面部的導電性粒子，從而確保導通性。
為了解決上述課題，本發明之連接體具備電路基板及經由異 向性導電接著劑連接於上述電路基板上之電子零件；形成於上述電路基板之基板電極及形成於上述電子零件之電極端子於各側緣部形成有階部，上述基板電極及上述電極端子於各主面部間夾持有上述異向性導電接著劑所含有之導電性粒子，上述導電性粒子與上述基板電極及上述電極端子之各上述階部滿足下式(1)。
a+b+c≦0.8D…(1)
[a：電極端子之階部高度(單位：μm)，b：基板電極之階部高度(單位：μm)，c：階部間間隙(單位：μm)，D：導電性粒子之直徑(單位：μm)]
又，本發明之連接體之製造方法，具有經由異向性導電接著劑將電子零件連接於電路基板上之步驟，形成於該電路基板之基板電極及形成於該電子零件之電極端子在各側緣部形成有階部，該基板電極及該電極端子於各主面部間夾持有該異向性導電接著劑所含有之導電性粒子，該導電性粒子與該基板電極及該電極端子之各該階部滿足下式(1)：a+b+c≦0.8D…(1)
[a：電極端子之階部高度(單位：μm)，b：基板電極之階部高度(單位：μm)，c：階部間間隙(單位：μm)，D：導電性粒子之直徑(單位：μm)]。
又，本發明之電子機器，具備有連接體，該連接體為上述記載之連接體。
根據本發明，可使夾持於基板電極及電極端子之兩主面部間的導電性粒子至少壓縮至粒徑之80%，從而可確保充分之導通性。
1‧‧‧異向性導電膜
2‧‧‧剝離膜
3‧‧‧黏合劑樹脂層
4‧‧‧導電性粒子
6‧‧‧捲取盤
10‧‧‧液晶顯示面板
11、12‧‧‧透明基板
12a‧‧‧緣部
13‧‧‧密封件
14‧‧‧液晶
15‧‧‧面板顯示部
16、17‧‧‧透明電極
17a‧‧‧端子部
18‧‧‧液晶驅動用IC
18a‧‧‧安裝面
19‧‧‧電極端子
20‧‧‧COG安裝部
21‧‧‧基板側對準標記
22‧‧‧IC側對準標記
23‧‧‧保護膜
27、28‧‧‧階部
33‧‧‧熱壓頭
圖1係作為連接體之一例而表示之液晶顯示面板之剖面圖。
圖2係表示液晶驅動用IC與透明基板之連接步驟之剖面圖。
圖3係表示液晶驅動用IC之電極端子(凸塊)及端子間間隔之俯視圖。
圖4係表示異向性導電膜之剖面圖。
圖5係表示導電性粒子呈晶格狀規則地排列之異向性導電膜之俯視圖。
圖6係表示夾持有導電性粒子之基板電極及電極端子之剖面圖。
圖7係表示將IC晶片連接於液晶顯示面板之透明基板的步驟之剖面圖，(A)表示連接前之步驟，(B)表示連接步驟。
以下，針對應用有本發明之連接體，一面參照圖式一面詳細地進行說明。再者，本發明並不僅限定於以下實施形態，當然可於不脫離本發明之主旨的範圍內進行各種變更。又，圖式係示意性者，存在各尺寸之比率等與現實者不同之情況。具體尺寸等應參酌以下說明而進行判斷。又，於圖式相互間當然亦含有相互尺寸之關係或比率不同之部分。
[液晶顯示面板]
以下，作為應用有本發明之連接體，以於玻璃基板安裝有液晶驅動用之IC晶片作為電子零件之液晶顯示面板為例進行說明。該液晶顯示面板10如圖1所示，由玻璃基板等構成之兩塊透明基板11、12對向地配置，該等透明基板11、12藉由框狀之密封件13而相互貼合。並且，液晶顯示面板10藉由將液晶14封入於被透明基板11、12圍繞之空間內而形成面板顯示部15。
透明基板11、12係於相互對向之兩內側表面，以相互交叉之方式形成有由ITO(銦錫氧化物)等構成的條紋狀之一對透明電極16、17。並且，兩透明電極16、17藉由該等兩透明電極16、17之該交叉部位構成作為液晶顯示之最小單位的像素。
兩透明基板11、12之中，一透明基板12以其平面尺寸大於另一透明基板11之方式形成，於該形成為大之透明基板12的緣部12a設置有COG安裝部20，該COG安裝部20安裝有作為電子零件之液晶驅動用IC18。再者，於COG安裝部20形成有透明電極17之端子部17a及基板側對準標記21，該基板側對準標記21與設置於液晶驅動用IC18之IC側對準標記22重疊。
[端子部]
又，如圖2所示，為了防止物理損傷或短路等，透明基板12於基板表面形成有由氮化膜或氧化矽膜等無機膜或有機膜等構成之絕緣性的保護膜23。保護膜23藉由公知之成膜方法形成於除端子部17a或基板側對準標記21以外之區域。藉此，於與保護膜23鄰接之端子部17a的側緣部形成由保護膜23產生之階部28。因此，端子部17a於剖面觀察時，階部28於兩側緣部***，主面部平坦化。
液晶驅動用IC18藉由選擇性地對像素施加液晶驅動電壓，可使液晶之配向部分地變化，而進行特定之液晶顯示。又，如圖2所示，液晶驅動用IC18於朝透明基板12之安裝面18a形成有複數個與透明電極17之端子部17a導通連接之電極端子19(凸塊)。電極端子19例如可較佳地使用銅凸塊或金凸塊，或者對銅凸塊實施了鍍金者。
[電極端子]
液晶驅動用IC18例如圖3所示，電極端子19(輸入凸塊)沿安裝面18a之一側緣排列成一列，電極端子19(輸出凸塊)沿與一側緣對向之另一側緣交錯狀地排列成複數列。電極端子19與設置於透明基板12之COG安裝部20的端子部17a分別以相同個數且相同間距形成，而使透明基板12與液晶驅動用IC18位置對準而連接，藉此進行連接。
再者，隨著近年來之液晶顯示裝置、此外電子機器之小型化、高功能化，液晶驅動用IC18等電子零件亦追求小型化、低背化，電極端子19之高度亦降低(例如6~15μm)。
又，如圖2所示，電極端子19於兩側緣部形成有階部27。階部27係於金屬製電極端子19之製造時所形成者，電極端子19於剖面觀察時，兩側緣部***，主面部平坦化。
液晶驅動用IC18藉由異向性導電連接於COG安裝部20，形成於電極端子19的兩側緣部之階部27與形成於端子部17a的兩側緣部之階部28結合。此時，端子部17a及電極端子19於兩階部27、28間嚙入導電性粒子4，隔著特定之間隙相對向。再者，嚙入於兩階部27、28間之導電性粒子4因液晶驅動用IC18受到熱壓頭33推壓，而於兩階部27、28間嚴重破碎或者破壞。
藉此，端子部17a與電極端子19之各主面部隔著兩階部27、28的高度加上夾持於兩階部27、28間之導電性粒子4的推壓時(或破壞時)之直徑的距離而相對向。再者，階部27之高度係指跨及端子部17a之主面部的法線方向之主面部與階部27之頂部之間的距離，階部28之高度係指跨 及電極端子19之主面部的法線方向之主面部與階部28之頂部之間的距離。
又，液晶驅動用IC18藉由在安裝面18a與基板側對準標記21重疊而形成進行對透明基板12之對準的IC側對準標記22。再者，由於正推進透明基板12之透明電極17的配線間距或液晶驅動用IC18之電極端子19之微距化，故對於液晶驅動用IC18及透明基板12，要求高精度之對準調整。
基板側對準標記21及IC側對準標記22可使用藉由組合而實現透明基板12與液晶驅動用IC18對準之各種標記。
在形成於COG安裝部20之透明電極17的端子部17a上，使用異向性導電膜1作為電路連接用接著劑而連接液晶驅動用IC18。異向性導電膜1含有導電性粒子4，經由導電性粒子4使液晶驅動用IC18之電極端子19與形成於透明基板12之緣部12a的透明電極17之端子部17a電性連接。該異向性導電膜1藉由利用熱壓頭33進行熱壓接而使黏合劑樹脂流動化，使導電性粒子4於端子部17a與液晶驅動用IC18之電極端子19間被擠碎，而使黏合劑樹脂於該狀態下進行硬化。藉此，異向性導電膜1將透明基板12與液晶驅動用IC18電性地、機械地連接。
又，於兩透明電極16、17上形成有實施特定之磨擦處理後之配向膜24，液晶分子之初期配向受該配向膜24之限制。進而，於兩透明基板11、12之外側，配設有一對偏光板25、26，自背光等光源(未圖示)之透射光的振動方向受該等兩偏光板25、26之限制。
[異向性導電膜]
繼而，針對異向性導電膜1進行說明。如圖4所示，異向性導電膜(ACF， Anisotropic Conductive Film)1通常於成為基材之剝離膜2上形成有含導電性粒子4之黏合劑樹脂層(接著劑層)3。異向性導電膜1係熱硬化型或紫外線等光硬化型之接著劑，貼合在形成於液晶顯示面板10之透明基板12的透明電極17上，並且搭載液晶驅動用IC18，利用熱壓頭33進行熱加壓，藉此使其進行流動化，導電性粒子4於相對向之透明電極17的端子部17a與液晶驅動用IC18之電極端子19間被壓碎，並藉由加熱或紫外線照射而以導電性粒子被壓碎之狀態下進行硬化。藉此，異向性導電膜1可將透明基板12與液晶驅動用IC18連接而導通。
又，異向性導電膜1具有含有膜形成樹脂、熱硬化性樹脂、潛伏性硬化劑、矽烷偶合劑等通常之黏合劑樹脂層3及導電性粒子4。如圖4所示，異向性導電膜1較佳於黏合劑樹脂層3以特定之模式規則地排列有導電性粒子4。
支持黏合劑樹脂層3之剝離膜2例如於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，有向聚丙烯)、PMP(Poly-4-methylpentene-1，聚-4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等塗佈聚矽氧等剝離劑而成，防止異向性導電膜1之乾燥，並且維持異向性導電膜1之形狀。
作為黏合劑樹脂層3所含有之膜形成樹脂，較佳為平均分子量為10000~80000左右之樹脂。作為膜形成樹脂，可列舉：環氧樹脂、變性環氧樹脂、胺基甲酸酯樹脂、苯氧基樹脂等各種樹脂。其中，就膜形成狀態、連接可靠性等觀點而言，尤佳為苯氧基樹脂。
作為熱硬化性樹脂，並無特別限定，例如可列舉市售之環氧 樹脂、丙烯酸樹脂等。
作為環氧樹脂，並無特別限定，例如可列舉：萘型環氧樹脂、聯苯型環氧樹脂、酚系酚醛清漆型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂、三苯酚甲烷型環氧樹脂、苯酚芳烷基型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、三苯甲烷型環氧樹脂等。該等可為單獨，亦可為兩2種以上之組合。
作為丙烯酸樹脂，並無特別限制，可根據目的適當選擇丙烯酸化合物、液狀丙烯酸酯等。例如可列舉：丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、環氧丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、1,4-丁二醇四丙烯酸酯(tetramethylene glycol tetra acrylate)、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、二環戊烯基丙烯酸酯、丙烯酸三環癸酯、異氰尿酸三(丙烯醯氧基乙基)酯、丙烯酸胺基甲酸酯、等。再者，亦可使用將丙烯酸酯設為甲基丙烯酸酯者。該等可單獨使用1種，亦可併用2種以上。
作為潛伏性硬化劑，並無特別限定，例如可列舉加熱硬化型、UV硬化型等各種硬化劑。潛伏性硬化劑平常不進行反應，藉由熱、光、加壓等根據用途所選擇之各種觸發而活化，從而開始反應。熱活性型潛伏性硬化劑之活化方法存在如下方法：利用由加熱引起之解離反應等產生活性種(陽離子或陰離子、自由基)之方法；於室溫附近穩定地分散於環氧樹脂中並於高溫下與環氧樹脂相溶、溶解而使硬化反應開始之方法；使分子篩封入型之硬化劑於高溫下溶出而使硬化反應開始之方法；藉由微膠囊 之溶出、硬化方法等。作為熱活性型潛伏性硬化劑，有咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺(aminimide)、聚胺鹽、雙氰胺等或該等之改質物，該等可為單獨，亦可為2種以上之混合體。其中，較佳為微膠囊型咪唑系潛伏性硬化劑。
作為矽烷偶合劑，並無特別限定，例如可列舉：環氧系、胺基系、巰基-硫化物系、脲基系等。藉由添加矽烷偶合劑，使有機材料與無機材料之界面的接著性提昇。
[導電性粒子]
作為導電性粒子4，可列舉於異向性導電膜1中使用的公知之任意導電性粒子。作為導電性粒子4，例如可列舉：鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子、金屬氧化物、於碳、石墨、玻璃、陶瓷、塑膠等粒子之表面塗佈有金屬者，或者於該等粒子之表面進而塗佈有絕緣薄膜者等。於為在樹脂粒子之表面塗佈有金屬之情形時，作為樹脂粒子，例如可列舉：環氧樹脂、酚樹脂、丙烯酸系樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等粒子。
[導電性粒子之規則排列]
異向性導電膜1較佳導電性粒子4於俯視下以特定之排列圖案規則地排列，例如圖5所示，以晶格狀且均等地排列。異向性導電膜1藉由導電性粒子4於俯視下規則地排列，而與隨機地分散之情形時相比，液晶驅動用IC18之所鄰接之電極端子19間微距化，端子間面積狹小化，並且即便高密度地填充有導電性粒子4，亦可於液晶驅動用IC18之連接步驟中防止因導電性粒子4的凝集體引起之電極端子19間之短路。
又，異向性導電膜1藉由規則地排列導電性粒子4，即便高密度地填充於黏合劑樹脂層3之情形時，亦可防止因導電性粒子4之凝集而產生疏密。因此，根據異向性導電膜1，於經微距化之端子部17a或電極端子19亦可捕捉導電性粒子4。導電性粒子4之均等排列圖案可於俯視下任意地設定為晶格形狀等。關於液晶驅動用IC18之連接步驟，於後文進行詳述。
此種異向性導電膜1例如可藉由如下方法而製造：於可延伸之片材上塗佈黏著劑，並將導電性粒子4單層排列於其上之後，使該片材以所需之延伸倍率進行延伸之方法；使導電性粒子4於基板上整齊排列為特定之排列圖案之後，將導電性粒子4轉印至由剝離膜2支持之黏合劑樹脂層3之方法；或經由設置有適合於排列圖案之開口部的排列板將導電性粒子4供給至由剝離膜2支持之黏合劑樹脂層3上之方法等。
再者，異向性導電膜1之形狀並無特別限定，例如圖4所示，可藉由製成可捲繞於捲取盤6之長條帶形狀，並僅裁切特定之長度而使用。
又，上述實施形態係以將於黏合劑樹脂層3中規則地排列有導電性粒子4之熱硬化性樹脂組成物成形為膜狀而成的接著膜作為異向性導電膜1為例進行說明，但本發明之接著劑並不限定於此，例如可設為積層僅由黏合劑樹脂3構成之絕緣性接著劑層及由規則地排列有導電性粒子4之黏合劑樹脂3構成的含導電性粒子之層而成之構成。又，異向性導電膜1只要導電性粒子4於俯視下規則地排列，則除如圖4所示般單層排列以外，亦可為導電性粒子4跨及複數個黏合劑樹脂層3排列並且於俯視下規則地排列者。又，異向性導電膜1亦可為於多層構成之至少一層內以特定距離 單一地分散者。
[導電性粒子與基板電極及電極端子之各階部的高度之關係]
此處，於使用規則地排列有導電性粒子4之異向性導電膜1之情形時，如圖6所示，存在電極端子19及端子部17a之兩階部27、28間嚙入導電性粒子4之情況。此時，導電性粒子4與夾持導電性粒子4之電極端子19及端子部17a之各階部27、28滿足下式(1)。
a+b+c≦0.8D…(1)
[a：電極端子19之階部高度(單位：μm)，b：端子部17a之階部高度(單位：μm)，c：階部間間隙(單位：μm)，D：導電性粒子4之直徑(單位：μm)]
藉由滿足式(1)，液晶顯示面板10可使夾持於端子部17a及電極端子19之兩主面部間的導電性粒子4壓縮至成為未壓縮時的粒徑之至少80%，從而可確保充分之導通性。
即，若液晶顯示面板10經由異向性導電膜1連接液晶驅動用IC18，則於電極端子19之階部27與端子部17a之階部28間嚙入導電性粒子4。此時，跨及端子部17a及電極端子19之兩主面部間的距離成為電極端子19之階部高度a、端子部17a之階部高度b以及因嚙入導電性粒子4而相隔之兩階部27、28間之間隙c的距離(a+b+c)。因此，可藉由使跨及端子部17a及電極端子19之兩主面部間的距離(a+b+c)成為導電性粒子4的直徑D之80%以下，而壓入至使導電性粒子4壓縮至至少粒徑之80%以下。
另一方面，於不滿足式(1)之情形時，由於在電極端子19之階部27與端子部17a之階部28間嚙入有導電性粒子4，故而跨及端子部17a及電極端子19之兩主面部間的距離變得最少大於導電性粒子4的粒徑之80%，導電性粒子4之壓縮率未達20%，導致壓入變得不充分。因此，有端子部17a與電極端子19之導通性變差之虞。
進而，本發明亦可滿足下式(2)。
c≦1μm…(2)
如式(2)所示，嚙入於端子部17a之階部27與電極端子19之階部28間的導電性粒子4受到較由主面部夾持更大之壓力，而壓縮至大致1μm以下之粒徑。再者，導電性粒子4於因壓縮而被破壞之情形時亦變為大致1μm以下之大小。即，兩階部27、28間之間隙c成為1μm以下。
另一方面，於不滿足式(2)之情形時，藉由兩階部27、28間之間隙超過1μm，而端子部17a與電極端子19之各主面部間的距離拉開，夾持於主面部間之導電性粒子4之壓縮變得未達20%，導致壓入變得不充分。因此，有端子部17a與電極端子19之導通性變差之虞。
[連接步驟]
繼而，針對將液晶驅動用IC18連接於透明基板12之連接步驟進行說明。首先，將異向性導電膜1暫時貼附於透明基板12之形成有端子部17a的COG安裝部20上。繼而，將該透明基板12載置於連接裝置之載置台上，經由異向性導電膜1將液晶驅動用IC18配置於透明基板12之安裝部上。
繼而，藉由加熱至使黏合劑樹脂層3硬化之特定之溫度的熱 壓頭33，於特定之壓力、時間下自液晶驅動用IC18上方進行熱加壓。藉此，異向性導電膜1之黏合劑樹脂層3表現流動性，自液晶驅動用IC18之安裝面18a與透明基板12之COG安裝部20間流出，並且黏合劑樹脂層3中之導電性粒子4夾持於液晶驅動用IC18之電極端子19與透明基板12之端子部17a間而被壓碎。
此時，如上述般，導電性粒子4與夾持導電性粒子4之電極端子19及端子部17a之各階部27、28滿足下式(1)。
a+b+c≦0.8D…(1)
[a：電極端子19之階部高度，b：端子部17a之階部高度，c：階部間間隙，D：導電性粒子4之直徑]
因此，液晶顯示面板10可使夾持於端子部17a及電極端子19之兩主面部間的導電性粒子4壓縮至至少成為粒徑之80%，從而可確保充分之導通性。
特別是於液晶顯示面板10使用藉由應對端子部17a及電極端子19之微距化使導電性粒子規則地排列而高密度地填充之異向性導電膜1的情形時，容易引起不僅於端子部17a及電極端子19之各主面部，於階部27、28間嚙入導電性粒子4之現象。於此情形時，亦可藉由滿足上述式(1)，而將夾持於端子部17a及電極端子19之各主面部間的導電性粒子4壓縮20%以上，從而可確保良好之導通可靠性。
其結果為，藉由在電極端子19與端子部17a之間夾持導電性粒子4而電性連接，於該狀態下藉由熱壓頭33而加熱之黏合劑樹脂進行硬化。藉此，可製造於液晶驅動用IC18之電極端子19與形成於透明基板 12之端子部17a間確保導通性之液晶顯示面板10。
不存在於電極端子19與端子部17a間之導電性粒子4，於鄰接之電極端子19間之端子間間隔分散於黏合劑樹脂，維持電性絕緣之狀態。藉此，實現僅於液晶驅動用IC18之電極端子19與透明基板12之端子部17a之間電性導通。再者，藉由使用自由基聚合反應系之速硬化類型者作為黏合劑樹脂，即便藉由短加熱時間亦可使黏合劑樹脂速硬化。又，作為異向性導電膜1，不限於熱硬化型，只要為進行加壓連接者，亦可使用光硬化型或者光熱併用型之接著劑。
[實施例]
繼而，針對本發明之實施例進行說明。本實施例中，使用規則地排列有導電性粒子之異向性導電膜，製作將評價用IC連接於評價用玻璃基板而成之連接體樣品，並分別對形成於評價用玻璃基板之基板電極與形成於評價用IC之IC凸塊之間所捕捉到之導電性粒子的壓縮率及可靠性試驗後之導通電阻(實施例1~6，比較例1、2)或鄰接之IC凸塊間的短路發生率(實施例7，比較例3)進行測定。
[異向性導電膜]
用於評價用IC之連接的異向性導電膜之黏合劑樹脂層藉由如下方式形成：製備將苯氧基樹脂(商品名：YP50，新日鐵住金化學股份有限公司製造)60質量份、環氧樹脂(商品名：jER828，三菱化學公司製造)40質量份、陽離子系硬化劑(商品名：SI-60L，三新化學工業公司製造)2質量份加入溶劑而成之黏合劑樹脂組成物，將該黏合劑樹脂組成物塗佈於剝離膜上，並進行焙燒。
並且，於可延伸之片材上塗佈黏著劑，並將導電性粒子晶格狀且均等地單層排列於其上之後，於使該片材以所需之延伸倍率延伸的狀態下，對黏合劑樹脂層進行層壓，藉此獲得異向性導電膜。
再者，本發明之導電性粒子的排列形態並不限定於本實施例中記載者。
[評價用IC]
作為用於測定導通電阻之評價元件，使用外形：1.8mm×20mm、厚度0.5mm、凸塊(鍍Au)：寬度30μm×長度85μm、高度15μm、凸塊間間隔寬度：50μm之評價用IC。
[評價用玻璃基板]
作為用於測定導通電阻之供評價用IC連接之評價用玻璃基板，使用外形：30mm×50mm、厚度0.5mm、形成有與用於測定導通電阻之評價用IC的凸塊同尺寸同間距之梳齒狀的電極圖案，並且於除電極圖案以外之區域形成有保護膜的ITO圖案玻璃。
[評價用IC]
作為用於測定鄰接之IC凸塊間之短路發生率的評價元件，使用外形：1.5mm×13mm、厚度0.5mm、凸塊(鍍Au)：寬度25μm×長度140μm、高度15μm、凸塊間間隔寬度：7.5μm之評價用IC。
[評價用玻璃基板]
作為用於測定鄰接之IC凸塊間的短路發生率之連接評價用IC的評價用玻璃基板，使用外形：30mm×50mm、厚度0.5mm、形成有與用於測定鄰接之IC凸塊間的短路發生率之評價用IC的凸塊同尺寸同間距之梳齒狀的電 極圖案，並且於除電極圖案以外之區域形成有保護膜的ITO圖案玻璃。
將異向性導電膜暫時貼附於該等評價用玻璃基板後，一面進行IC凸塊與基板電極之對準一面搭載評價用IC，並藉由熱壓頭進行壓接。實施例1~7、比較例1及比較例3藉由在180℃、80MPa、5sec之條件下進行熱壓接而製作連接體樣品。比較例2藉由在180℃、40MPa、5sec之條件下進行熱壓接而製作連接體樣品。針對各連接體樣品，對夾持於IC凸塊與基板電極之間的導電性粒子之壓縮率及可靠性試驗後之導通電阻或鄰接之IC凸塊間的短路發生率進行測定。可靠性試驗之條件為85℃、85%RH、500hr。
[實施例1]
實施例1中，作為異向性導電膜，使用粒徑4μm之導電性粒子。連接前之粒子個數密度為28000個/mm2。又，形成於IC凸塊之側緣部的階部之高度a為0.8μm，於在玻璃基板上形成之基板電極的側緣部所形成之階部的高度b為0.8μm。
關於實施例1之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為0.8μm，夾持於IC凸塊與基板電極之兩主面部間的導電性粒子之壓縮率為40%，可靠性試驗後之導通電阻為3Ω。
[實施例2]
實施例2中，利用使用有粒徑3.5μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。IC凸塊及基板電極之各階部的高度a、b設為與實施例1相同之條件。
關於實施例2之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為1.0μm，夾持於IC凸塊與基板電極之兩主面部間的導電性粒子之壓縮率為26%，可靠性試驗後之導通電阻為4Ω。
[實施例3]
實施例3中，利用使用有粒徑3.0μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。IC凸塊及基板電極之各階部的高度a、b設為與實施例1相同之條件。
關於實施例3之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為0.8μm，夾持於IC凸塊與基板電極之兩主面部間的導電性粒子之壓縮率為20%，可靠性試驗後之導通電阻為5Ω。
[實施例4]
實施例4中，利用使用有粒徑3.5μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。又，形成於IC凸塊之側緣部的階部之高度a為0.8μm，於在玻璃基板上形成之基板電極的側緣部所形成之階部的高度b為1.2μm。
關於實施例4之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為0.8μm，夾持於IC凸塊與基板電極之兩主面部間的導電性粒子之壓縮率為20%，可靠性試驗後之導通電阻為5Ω。
[實施例5]
實施例5中，利用使用有粒徑3.0μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。IC凸塊及基板電極之各階部的高度a、b設為與實施例1相同之條件。
關於實施例5之連接體樣品，未於IC凸塊與基板電極之兩階部之間嚙入導電性粒子，階部間之間隙c為0μm，夾持於IC凸塊與基板電極之兩主面部間的導電性粒子之壓縮率為47%，可靠性試驗後之導通電阻為3Ω。
[實施例6]
實施例6中，利用使用有粒徑3.0μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。IC凸塊及基板電極之各階部的高度a、b設為與實施例1相同之條件。
關於實施例6之連接體樣品，由於對向之IC凸塊之側緣部與基板電極之側緣部錯開，故階部間之間隙c為-0.2μm，夾持於IC凸塊與基板電極之兩主面部間的導電性粒子之壓縮率為53%，可靠性試驗後之導通電阻為3Ω。
[實施例7]
實施例7中，利用使用有粒徑4.0μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。又，形成於IC凸塊之側緣部的階部之高度a為0.8μm，於在玻璃基板上形成之基板電極的側緣部所形成之階部的高度b為1.4μm。
關於實施例7之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為1.0μm，夾持於IC凸 塊與基板電極之兩主面部間的導電性粒子之壓縮率為20%，跨及鄰接之IC凸塊間的端子間短路之發生率為20ppm。
[比較例1]
比較例1中，利用使用有粒徑3.0μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。又，形成於IC凸塊之側緣部的階部之高度a為0.8μm，於在玻璃基板上形成之基板電極的側緣部所形成之階部的高度b為1.4μm。
關於比較例1之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為0.35μm，夾持於IC凸塊與基板電極之兩主面部間之導電性粒子的壓縮率為15%，可靠性試驗後之導通電阻為30Ω。
[比較例2]
比較例2中，利用使用有粒徑4.0μm之導電性粒子的異向性導電膜。連接前之粒子個數密度為28000個/mm2。又，形成於IC凸塊之側緣部的階部之高度a為0.8μm，於在玻璃基板上形成之基板電極的側緣部所形成之階部的高度b為0.8μm。
關於比較例2之連接體樣品，由於將熱壓頭之推壓力減弱為40MPa，故因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為2.0μm，夾持於IC凸塊與基板電極之兩主面部間之導電性粒子的壓縮率為10%，可靠性試驗後之導通電阻為40Ω。
[比較例3]
比較例3中，利用使用有粒徑4.0μm之導電性粒子的異向性導電膜。 連接前之粒子個數密度為40000個/mm2。又，形成於IC凸塊之側緣部的階部之高度a為0.8μm，於在玻璃基板上形成之基板電極的側緣部所形成之階部的高度b為1.4μm。
關於比較例3之連接體樣品，因於IC凸塊與基板電極之兩階部之間嚙入導電性粒子所產生之階部間的間隙c為1.1μm，夾持於IC凸塊與基板電極之兩主面部間之導電性粒子的壓縮率為17.5%，跨及鄰接之IC凸塊間之端子間短路的發生率為1000ppm。
如表1所示，實施例1~6中，形成於IC凸塊之側緣部的階部之高度a，加上於在玻璃基板上形成之基板電極之緣部所形成的階部之高度b及IC凸塊與基板電極之兩階部間的間隙c而得之IC凸塊與基板電極之 兩主面部間之距離設為導電性粒子的直徑之80%以下。因此，實施例1~6中，夾持於IC凸塊與基板電極之兩主面部間之導電性粒子被壓縮20%以上，即便於可靠性試驗後亦可維持良好之導通性。
另一方面，比較例1中，IC凸塊與基板電極之兩主面部間的距離大，為導電性粒子的直徑之85%，導電性粒子僅被壓縮15%。又，比較例2中，IC凸塊與基板電極之兩主面部間的距離大，為導電性粒子的直徑之90%，導電性粒子僅被壓縮10%。因此，比較例1及比較例2中，導電性粒子之壓入不足，於可靠性試驗後導通電阻為30Ω以上，導通性嚴重變差。
又，如表2所示，相對於實施例7之粒子個數密度為28000個/mm2，比較例3之粒子個數密度高密度地填充為40000個/mm2。因此，實施例7之連接體樣品的IC凸塊間之間隔的粒子間距離平均為2μm(粒徑之0.5倍)，相對於此，比較例3之連接體樣品的IC凸塊間之間隔的粒子間距離窄，平均為1μm(粒徑之0.25倍)。又，IC凸塊間之短路發生率亦與嚙入於IC凸塊與基板電極之兩階部間的導電性粒子相關，比較例3較實施例7大幅上升。

Claims (7)

  1. 一種連接體，具備：電路基板及經由異向性導電接著劑連接於該電路基板上之電子零件；形成於該電路基板之基板電極及形成於該電子零件之電極端子在各側緣部形成有階部，該基板電極及該電極端子於各主面部間夾持有該異向性導電接著劑所含有之導電性粒子，該導電性粒子與該基板電極及該電極端子之各該階部滿足下式(1)：a+b+c≦0.8D…(1)[a：電極端子之階部高度(單位：μm)，b：基板電極之階部高度(單位：μm)，c：階部間間隙(單位：μm)，D：導電性粒子之直徑(單位：μm)]。
  2. 如申請專利範圍第1項之連接體，其含有在形成於該各側緣部之階部間夾持有該導電性粒子的該基板電極及該電極端子。
  3. 如申請專利範圍第1或2項之連接體，其中，該導電性粒子與該基板電極及該電極端子之各該階部進而滿足下式(2)：c≦1μm…(2)。
  4. 如申請專利範圍第1或2項之連接體，其中，該異向性導電接著劑形成為膜狀，該導電性粒子規則地排列或彼此分開。
  5. 一種連接體之製造方法，具有經由異向性導電接著劑將電子零件連接於電路基板上之步驟， 形成於該電路基板之基板電極及形成於該電子零件之電極端子在各側緣部形成有階部，該基板電極及該電極端子於各主面部間夾持有該異向性導電接著劑所含有之導電性粒子，該導電性粒子與該基板電極及該電極端子之各該階部滿足下式(1)：a+b+c≦0.8D…(1)[a：電極端子之階部高度(單位：μm)，b：基板電極之階部高度(單位：μm)，c：階部間間隙(單位：μm)，D：導電性粒子之直徑(單位：μm)]。
  6. 一種電子機器，具備有連接體，該連接體為申請專利範圍第1至4項中任一項之連接體。
  7. 如申請專利範圍第6項之電子機器，其為顯示裝置。
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