CN113764521A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN113764521A
CN113764521A CN202110593985.3A CN202110593985A CN113764521A CN 113764521 A CN113764521 A CN 113764521A CN 202110593985 A CN202110593985 A CN 202110593985A CN 113764521 A CN113764521 A CN 113764521A
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trench
layer
semiconductor device
region
type
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CN202110593985.3A
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Chinese (zh)
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CN113764521B (zh
Inventor
迫纮平
高桥彻雄
藤井秀纪
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7396Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/407Recessed field plates, e.g. trench field plates, buried field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356Disposition, e.g. buried gate electrode
    • H01L29/4236Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • H01L29/66348Vertical insulated gate bipolar transistors with a recessed gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8613Mesa PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202110593985.3A 2020-06-04 2021-05-28 半导体装置 Active CN113764521B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020097609A JP7459666B2 (ja) 2020-06-04 2020-06-04 半導体装置
JP2020-097609 2020-06-04

Publications (2)

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CN113764521A true CN113764521A (zh) 2021-12-07
CN113764521B CN113764521B (zh) 2024-07-16

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Country Status (4)

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US (1) US11456376B2 (ja)
JP (1) JP7459666B2 (ja)
CN (1) CN113764521B (ja)
DE (1) DE102021109587A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113690301A (zh) * 2020-05-18 2021-11-23 华润微电子(重庆)有限公司 半导体器件及其制备方法
CN116895690A (zh) * 2023-05-31 2023-10-17 海信家电集团股份有限公司 半导体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024067299A (ja) * 2022-11-04 2024-05-17 株式会社デンソー 半導体装置とその製造方法
CN115985852B (zh) * 2023-03-22 2023-06-23 上海鼎阳通半导体科技有限公司 半导体器件及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120043581A1 (en) * 2010-08-17 2012-02-23 Masaki Koyama Semiconductor device
CN105849912A (zh) * 2013-12-27 2016-08-10 丰田自动车株式会社 半导体装置及其制造方法
JP2016219774A (ja) * 2015-05-15 2016-12-22 富士電機株式会社 半導体装置
JP2020043237A (ja) * 2018-09-11 2020-03-19 株式会社デンソー 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2576125B2 (ja) 1987-06-25 1997-01-29 ソニー株式会社 時刻信号発生装置
JP2700006B2 (ja) 1987-10-19 1998-01-19 カシオ計算機株式会社 液晶表示素子
JP4761644B2 (ja) 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
JP5103830B2 (ja) * 2006-08-28 2012-12-19 三菱電機株式会社 絶縁ゲート型半導体装置
JP5052091B2 (ja) 2006-10-20 2012-10-17 三菱電機株式会社 半導体装置
JP5333342B2 (ja) * 2009-06-29 2013-11-06 株式会社デンソー 半導体装置
DE112011105319B4 (de) 2011-06-09 2015-10-08 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP5488687B2 (ja) 2011-09-28 2014-05-14 トヨタ自動車株式会社 半導体装置およびその製造方法
US10562846B2 (en) 2015-03-10 2020-02-18 Daikin Industries, Ltd. Nitrileoxide compound
JP2016181551A (ja) * 2015-03-23 2016-10-13 トヨタ自動車株式会社 半導体装置
US10217738B2 (en) 2015-05-15 2019-02-26 Smk Corporation IGBT semiconductor device
JP2017098359A (ja) * 2015-11-20 2017-06-01 トヨタ自動車株式会社 逆導通igbt
DE102016125879B3 (de) 2016-12-29 2018-06-21 Infineon Technologies Ag Halbleitervorrichtung mit einer IGBT-Region und einer nicht schaltbaren Diodenregion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120043581A1 (en) * 2010-08-17 2012-02-23 Masaki Koyama Semiconductor device
CN105849912A (zh) * 2013-12-27 2016-08-10 丰田自动车株式会社 半导体装置及其制造方法
JP2016219774A (ja) * 2015-05-15 2016-12-22 富士電機株式会社 半導体装置
JP2020043237A (ja) * 2018-09-11 2020-03-19 株式会社デンソー 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113690301A (zh) * 2020-05-18 2021-11-23 华润微电子(重庆)有限公司 半导体器件及其制备方法
CN113690301B (zh) * 2020-05-18 2024-01-26 华润微电子(重庆)有限公司 半导体器件及其制备方法
CN116895690A (zh) * 2023-05-31 2023-10-17 海信家电集团股份有限公司 半导体装置
CN116895690B (zh) * 2023-05-31 2024-03-08 海信家电集团股份有限公司 半导体装置

Also Published As

Publication number Publication date
JP2021190657A (ja) 2021-12-13
CN113764521B (zh) 2024-07-16
JP7459666B2 (ja) 2024-04-02
US20210384335A1 (en) 2021-12-09
DE102021109587A1 (de) 2021-12-09
US11456376B2 (en) 2022-09-27

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