CN113764521A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN113764521A CN113764521A CN202110593985.3A CN202110593985A CN113764521A CN 113764521 A CN113764521 A CN 113764521A CN 202110593985 A CN202110593985 A CN 202110593985A CN 113764521 A CN113764521 A CN 113764521A
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- 238000005530 etching Methods 0.000 description 6
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- 229910000838 Al alloy Inorganic materials 0.000 description 4
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020097609A JP7459666B2 (ja) | 2020-06-04 | 2020-06-04 | 半導体装置 |
JP2020-097609 | 2020-06-04 |
Publications (2)
Publication Number | Publication Date |
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CN113764521A true CN113764521A (zh) | 2021-12-07 |
CN113764521B CN113764521B (zh) | 2024-07-16 |
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Application Number | Title | Priority Date | Filing Date |
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CN202110593985.3A Active CN113764521B (zh) | 2020-06-04 | 2021-05-28 | 半导体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11456376B2 (ja) |
JP (1) | JP7459666B2 (ja) |
CN (1) | CN113764521B (ja) |
DE (1) | DE102021109587A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113690301A (zh) * | 2020-05-18 | 2021-11-23 | 华润微电子(重庆)有限公司 | 半导体器件及其制备方法 |
CN116895690A (zh) * | 2023-05-31 | 2023-10-17 | 海信家电集团股份有限公司 | 半导体装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2024067299A (ja) * | 2022-11-04 | 2024-05-17 | 株式会社デンソー | 半導体装置とその製造方法 |
CN115985852B (zh) * | 2023-03-22 | 2023-06-23 | 上海鼎阳通半导体科技有限公司 | 半导体器件及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120043581A1 (en) * | 2010-08-17 | 2012-02-23 | Masaki Koyama | Semiconductor device |
CN105849912A (zh) * | 2013-12-27 | 2016-08-10 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
JP2016219774A (ja) * | 2015-05-15 | 2016-12-22 | 富士電機株式会社 | 半導体装置 |
JP2020043237A (ja) * | 2018-09-11 | 2020-03-19 | 株式会社デンソー | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2576125B2 (ja) | 1987-06-25 | 1997-01-29 | ソニー株式会社 | 時刻信号発生装置 |
JP2700006B2 (ja) | 1987-10-19 | 1998-01-19 | カシオ計算機株式会社 | 液晶表示素子 |
JP4761644B2 (ja) | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
JP5103830B2 (ja) * | 2006-08-28 | 2012-12-19 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP5052091B2 (ja) | 2006-10-20 | 2012-10-17 | 三菱電機株式会社 | 半導体装置 |
JP5333342B2 (ja) * | 2009-06-29 | 2013-11-06 | 株式会社デンソー | 半導体装置 |
DE112011105319B4 (de) | 2011-06-09 | 2015-10-08 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
JP5488687B2 (ja) | 2011-09-28 | 2014-05-14 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
US10562846B2 (en) | 2015-03-10 | 2020-02-18 | Daikin Industries, Ltd. | Nitrileoxide compound |
JP2016181551A (ja) * | 2015-03-23 | 2016-10-13 | トヨタ自動車株式会社 | 半導体装置 |
US10217738B2 (en) | 2015-05-15 | 2019-02-26 | Smk Corporation | IGBT semiconductor device |
JP2017098359A (ja) * | 2015-11-20 | 2017-06-01 | トヨタ自動車株式会社 | 逆導通igbt |
DE102016125879B3 (de) | 2016-12-29 | 2018-06-21 | Infineon Technologies Ag | Halbleitervorrichtung mit einer IGBT-Region und einer nicht schaltbaren Diodenregion |
-
2020
- 2020-06-04 JP JP2020097609A patent/JP7459666B2/ja active Active
-
2021
- 2021-03-17 US US17/204,247 patent/US11456376B2/en active Active
- 2021-04-16 DE DE102021109587.5A patent/DE102021109587A1/de active Pending
- 2021-05-28 CN CN202110593985.3A patent/CN113764521B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120043581A1 (en) * | 2010-08-17 | 2012-02-23 | Masaki Koyama | Semiconductor device |
CN105849912A (zh) * | 2013-12-27 | 2016-08-10 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
JP2016219774A (ja) * | 2015-05-15 | 2016-12-22 | 富士電機株式会社 | 半導体装置 |
JP2020043237A (ja) * | 2018-09-11 | 2020-03-19 | 株式会社デンソー | 半導体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113690301A (zh) * | 2020-05-18 | 2021-11-23 | 华润微电子(重庆)有限公司 | 半导体器件及其制备方法 |
CN113690301B (zh) * | 2020-05-18 | 2024-01-26 | 华润微电子(重庆)有限公司 | 半导体器件及其制备方法 |
CN116895690A (zh) * | 2023-05-31 | 2023-10-17 | 海信家电集团股份有限公司 | 半导体装置 |
CN116895690B (zh) * | 2023-05-31 | 2024-03-08 | 海信家电集团股份有限公司 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2021190657A (ja) | 2021-12-13 |
CN113764521B (zh) | 2024-07-16 |
JP7459666B2 (ja) | 2024-04-02 |
US20210384335A1 (en) | 2021-12-09 |
DE102021109587A1 (de) | 2021-12-09 |
US11456376B2 (en) | 2022-09-27 |
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