CN112779493A - 一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法 - Google Patents
一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法 Download PDFInfo
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Abstract
本发明公开了一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,本发明采用气体离子源刻蚀清洗技术(Gas Ion Source Etching,GISETCH)和高功率脉冲磁控溅射技术(High Power Impulse MagnetronSputtering,HIPIMS),在凹版印刷板表面镀制高质量的Cr+CrN涂层,用于取代原有的水电镀工艺。通过球坑测试、粗糙度测试、划痕试验、硬度测试、表面形貌观察等分析涂层各方面的性能后发现,GISETCH和HIPIMS技术制备的Cr+CrN涂层膜基结合力更强,其表面晶粒更细小,缺陷少,断面组织致密,经过实际印刷测试,耐印率超过水电镀水平。
Description
技术领域
本发明属于功能涂层技术领域,具体涉及一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法。
背景技术
凹版印刷以按原稿图文刻制的凹坑载墨,线条的粗细及油墨的浓淡层次在刻版时可以任意控制,不易被模仿和伪造,应用越来越广泛。传统凹版印刷版涂层采用电镀铜或铬等金属层来增加寿命。该电镀工艺污染严重,涂层表面不均匀。近年来利用物理气相沉积PVD技术制备涂层应用广泛,目前较成熟的微直流磁控溅射技术及电弧离子镀技术,但普通磁控溅射技术膜基之间结合力较差,涂层易剥落失效,电弧离子镀技术有高金属离化率和强膜基结合力的优点,但是在沉积过程中容易产生的大量宏观颗粒堆积,造成涂层表面粗糙,且涂层的内应力高,耐印率低。因此,开发一种高可性能凹版印刷版涂层制备工艺很有必要。
发明内容
本发明采用气体离子源刻蚀清洗技术(Gas Ion Source Etching,GISETCH)和高功率脉冲磁控溅射技术(High Power Impulse MagnetronSputtering,HIPIMS),在凹版印刷板表面镀制高质量的Cr+CrN涂层,用于取代原有的水电镀工艺,膜基结合力更强,其表面晶粒更细小,缺陷少,断面组织致密,经过实际印刷测试,耐印率超过水电镀水平。
为实现上述目的,本发明提供如下技术方案:采用镍板为基底,将镍板表面清洗干燥,然后固定在镀膜机转架上,镀膜机抽真空后,设定一定的温度和偏压,通入一定量的氩气和氢气,通过气体离子源刻蚀清洗技术(Gas Ion Source Etching,GISETCH),Ar原子和H原子在高电压下电离出Ar离子和H离子,Ar离子和H离子在偏压的作用下轰击和活化镍板,完成对镍板表面刻蚀清洗,然后在镀膜工艺下完成Cr+CrN复合涂层的制备。
作为本发明的一种优选技术方案,所述的基底为镍板,镍板装卡前用丙酮溶液和工业用无水乙醇试剂超声清洗15~20min,并在干燥箱内烘干。CrN涂层制备采用纯度超过99.9%的高纯Cr靶。
作为本发明的一种优选技术方案,所述的镀膜机有效镀膜空间为φ1100mm×1100mm,真空室内配备HIPIMS高能脉冲磁控电源。
作为本发明的一种优选技术方案,所述的气体离子源刻蚀清洗技术,包括转架转速设定为1-2r/min,开始沉积前抽真空至3.0*10-3Pa以下,沉积温度为150~180℃;真空室内通入纯Ar至腔体气压达到0.5pa,偏压调整为-400V,在偏压条件下利用Ar离子轰击镍板60-90min,完成镍板表面清洗。
作为本发明的一种优选技术方案,所述的镀膜工艺,具体为:先镀一层Cr作为打底层,然后以再镀制CrN层。打底层沉积时间控制为30~40min;沉积CrN层时通入氮气,氮气流量设定为30~40sccm,Highpulse靶溅射功率为10kW,基体偏压为-70~-90V。多层结构涂层采用以一层Cr以及一层CrN相互叠加的方式沉积,每一层沉积时间控制为8~10 min。
与现有技术相比,本发明的有益效果是:本发明采用气体离子源刻蚀清洗技术(Gas Ion Source Etching,GISETCH)和高功率脉冲磁控溅射技术(High Power ImpulseMagnetronSputtering,HIPIMS),在凹版印刷板表面镀制高质量的Cr+CrN涂层,用于取代原有的水电镀工艺。Cr+CrN膜层更加致密,膜层光亮度和致密性比其他的磁控溅射技术更好。通过球坑测试、粗糙度测试、划痕试验、硬度测试、表面形貌观察等分析发现, GISETCH和HIPIMS技术制备的Cr+CrN涂层膜基结合力更强,其表面晶粒更细小,缺陷少,断面组织致密,经过实际印刷测试,耐印率远超过水电镀水平。
附图说明
图1为CrN涂层球磨仪球坑图;
图2为CrN涂层制备对比图;
图3为CrN涂层划痕轨迹图与划痕参数曲线图;
图4为其他工艺CrN涂层划痕轨迹图与划痕参数曲线图;
图5为沉积态CrN涂层表面微观组织照片;
图6为其他工艺沉积态CrN涂层表面微观组织照片
图7为沉积态CrN涂层断面微观组织照片;
具体实施方式
一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,其特征在于,具体步骤如下:采用镍板为基底,将镍板表面清洗干燥,然后固定在镀膜机转架上,镀膜机抽真空后,设定一定的温度和偏压,通入一定量的氩气和氢气,通过气体离子源刻蚀清洗技术(Gas Ion Source Etching,GISETCH),Ar原子和H原子在高电压下电离出Ar离子和H离子,Ar离子和H离子在偏压的作用下轰击和活化镍板,完成对镍板表面刻蚀清洗,然后在镀膜工艺下完成Cr+CrN复合涂层的制备。
作为本发明的一种优选技术方案,所述的基底为镍板,镍板装卡前用丙酮溶液和工业用无水乙醇试剂超声清洗15~20min,并在干燥箱内烘干。CrN涂层制备采用纯度超过99.9%的高纯Cr靶。
作为本发明的一种优选技术方案,所述的镀膜机有效镀膜空间为φ1100mm×1100mm,真空室内配备HIPIMS高能脉冲磁控电源。
作为本发明的一种优选技术方案,所述的气体离子源刻蚀清洗技术,包括转架转速设定为1-2r/min,开始沉积前抽真空至3.0*10-3Pa以下,沉积温度为150~180℃;真空室内通入纯Ar至腔体气压达到0.5pa,偏压调整为-400V,在偏压条件下利用Ar离子轰击镍板60~90min,完成镍板表面清洗。
作为本发明的一种优选技术方案,所述的镀膜工艺,具体为:先镀一层Cr作为打底层,然后以再镀制CrN层。打底层沉积时间控制为30~40min;沉积CrN层时通入氮气,氮气流量设定为30~400sccm,Highpulse靶溅射功率为10kW,基体偏压为-70~-90V。多层结构涂层采用以一层Cr以及一层CrN相互叠加的方式沉积,每一层沉积时间控制为8~10 min。
作为本发明的一种优选技术方案,所述的镀膜工艺,具体为:先镀一层Cr作为打底层,然后以再镀制CrN层。打底层沉积时间控制为30~40min;沉积CrN层时通入氮气,氮气流量设定为30~40sccm,Highpulse靶溅射功率为10kW,基体偏压为-70~-90V。多层结构涂层采用以一层Cr以及一层CrN相互叠加的方式沉积,每一层沉积时间控制为8~10 min。
实施例1
图1采用球坑仪摩擦涂层,摩擦后在显微镜下观察涂层的多层涂层形貌。可以看出各层层次分明,环装结构基本为同心圆环,与图2的涂层制备方法相比,该工艺可制备涂层的层数多,层厚度均匀,过度层结合较好。
图3分别是ARC CrN、(H+B)CrN、图中基线上下波动的曲线为声发射信号曲线,基线上方的趋势线为摩擦系数曲线。摩擦系数曲线的突变区间表明金刚石压头从涂层划破到基体。如图在曲线上标定ARC CrN临界载荷33.5N,(H+B)CrN临界载荷72.2N,采用该方法沉积得到的涂层具有更好的膜基结合力。而图3中划痕边缘光滑平整,涂层与基体的结合更加紧密。图4的其他工艺对比图中划痕边缘出现细碎的涂层脱落块,涂层结合不好,脆硬易碎。
图5分别为扫描电镜下观察到的表面微观形貌。图6对比图中电弧离子镀沉涂层的表面存在大液滴,并带有针孔缺陷,本工艺条件下涂层的表面光滑,组织排列地十分紧密,虽然有少量针孔出现,但整体较均匀。断面图观察到多层涂层花样一层一层分布十分明显。
图7涂层断面(本工艺)可以看到有细碎的柱状晶被紧紧压在一起,组织更加细小。
上述实施例均为本发明较佳实例,凡是依据本发明的技术实质对以上实施所做的任何简单修饰、等同变化与修饰、均落入本发明的保护范围内。
Claims (5)
1.一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,其特征在于,具体步骤如下:采用镍板为基底,将镍板表面清洗干燥,然后固定在镀膜机转架上,镀膜机抽真空后,设定一定的温度和偏压,通入一定量的氩气和氢气,通过气体离子源刻蚀清洗技术(Gas Ion Source Etching,GISETCH),Ar原子和H原子在高电压下电离出Ar离子和H离子,Ar离子和H离子在偏压的作用下轰击和活化镍板,完成对镍板表面刻蚀清洗,然后在镀膜工艺下完成Cr+CrN复合涂层的制备。
2.根据权利要求1所述的一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,其特征在于:所述的基底为镍板,镍板装卡前用丙酮溶液和工业用无水乙醇试剂超声清洗15~20min,并在干燥箱内烘干。Cr+CrN涂层制备采用纯度超过99.9%的高纯Cr
靶。
3.根据权利要求1所述的一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,其特征在于:所述的镀膜机有效镀膜空间为φ1100mm×1100mm,真空室内配备HIPIMS高能脉冲磁控电源。
4.根据权利要求1所述的一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,其特征在于:所述的气体离子源刻蚀清洗技术,包括转架转速设定为1-2r/min,开始沉积前抽真空至3.0*10-3Pa以下,沉积温度为150~180℃;真空室内通入纯Ar至腔体气压达到0.5pa,偏压调整为-400V,在偏压条件下利用Ar离子轰击镍板60-90min,完成镍板表面清洗。
5.根据权利要求1所述的一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法,其特征在于:所述的镀膜工艺,具体为:先镀一层Cr作为打底层,然后以再镀制CrN层。打底层沉积时间控制为30~40min;沉积CrN层时通入氮气,氮气流量设定为30~40sccm,Highpulse靶溅射功率为10kW,基体偏压为-70~-90V。多层结构涂层采用以一层Cr以及一层CrN相互叠加的方式沉积,每一层沉积时间控制为8~10min。
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