CN112518573A - Polishing apparatus, polishing machine, and polishing method - Google Patents

Polishing apparatus, polishing machine, and polishing method Download PDF

Info

Publication number
CN112518573A
CN112518573A CN202011231876.9A CN202011231876A CN112518573A CN 112518573 A CN112518573 A CN 112518573A CN 202011231876 A CN202011231876 A CN 202011231876A CN 112518573 A CN112518573 A CN 112518573A
Authority
CN
China
Prior art keywords
cleaning
grinding
silicon wafer
drying device
vacuum chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011231876.9A
Other languages
Chinese (zh)
Other versions
CN112518573B (en
Inventor
陈兴松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Original Assignee
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Eswin Silicon Wafer Technology Co Ltd, Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN202011231876.9A priority Critical patent/CN112518573B/en
Publication of CN112518573A publication Critical patent/CN112518573A/en
Application granted granted Critical
Publication of CN112518573B publication Critical patent/CN112518573B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/007—Cleaning of grinding wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a grinding device, a grinding machine and a grinding method, wherein the grinding device comprises: a work table; the rotating table is arranged on the workbench; at least one vacuum chuck disposed on the rotating table; the grinding disc is positioned above the vacuum chuck; the first cleaning device is arranged on the rotating table and used for cleaning and cooling a grinding area of a part, in contact with the vacuum chuck, of the grinding disc; and the first cleaning and drying device is movably arranged on the workbench to clean and dry the back of the ground silicon wafer. The first cleaning device of the grinding device provided by the invention is specially used for cleaning and cooling the grinding area, so that the waste of water resources is reduced while the cooling effect is enhanced, and the silicon wafer is cleaned while being ground.

Description

Polishing apparatus, polishing machine, and polishing method
Technical Field
The invention belongs to the technical field of wafer forming and processing, and particularly relates to a grinding device, a grinding machine and a grinding method.
Background
The grinding process of the silicon chip is very common in the field of semiconductors, and mainly has two application aspects, namely, after the manufacture of a chip is finished, the back surface with excessive thickness is thinned, and the unused part is removed to be beneficial to the subsequent packaging test process; and secondly, in the wafer manufacturing process, in order to improve the surface state of the silicon wafer and increase the flatness, the silicon wafer is ground so as to be beneficial to the subsequent polishing process.
The existing silicon wafer grinding component can not be cleaned while the silicon wafer is ground, in addition, in the grinding process, cooling water is sprayed out from the edge of the grinding wheel and is used for cooling a grinding area and taking away ground powder, the part of the grinding wheel, which is really contacted with the silicon wafer, approximately occupies one fourth of the grinding wheel, but cooling water discharge holes are uniformly distributed on the circumference of the grinding wheel, so that the cooling and draining effects of other three fourths of cooling water are not obvious, and waste is caused to water resources. In addition, because a large amount of grinding silicon powder and grinding wheel falling objects are generated in the silicon wafer grinding process, the grinding part of the existing silicon wafer cannot timely clean and discharge the grinding silicon powder and the grinding wheel falling objects, grinding wheel marks are easily generated on the surface of the silicon wafer, a damaged layer of the silicon wafer is increased, and the grinding quality of the silicon wafer is reduced. In addition, the existing grinding device cleans and dries the silicon wafer by placing the ground silicon wafer on the rotating device and utilizing the high-speed rotation of the rotating device, and the silicon wafer is rotated at a high speed in the process, so that the silicon wafer is easy to break.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a grinding apparatus, a grinding machine and a grinding method. The technical problem to be solved by the invention is realized by the following technical scheme:
the present invention provides a grinding apparatus, comprising:
a work table;
the rotating table is arranged on the workbench;
at least one vacuum chuck disposed on the rotary table;
the grinding disc is positioned above the vacuum chuck;
a first cleaning device arranged on the rotating table to clean and cool a grinding area of a contact part of the grinding disc and the vacuum suction disc;
and the first cleaning and drying device is movably arranged on the workbench to clean and dry the back of the ground silicon wafer.
In one embodiment of the invention, the cleaning and drying device further comprises a second cleaning and drying device which is arranged above the vacuum chuck and used for cleaning and drying the vacuum chuck or the silicon wafer loaded on the vacuum chuck.
In one embodiment of the invention, the polishing device further comprises a second cleaning device, wherein the second cleaning device is arranged on the workbench and positioned below the polishing disk so as to clean the polishing disk in a non-polishing area.
In one embodiment of the invention, a baffle member is arranged on the rotating table, and the two vacuum suction cups are symmetrically arranged around the baffle member.
In one embodiment of the present invention, the second washing and drying device is connected to the barrier through a telescopic device so as to extend or retract the second washing and drying device.
In one embodiment of the present invention, the telescopic device comprises:
the motor is used for providing power for the extension or retraction of the second cleaning and drying device;
the transmission mechanism is connected with the motor and the second cleaning and drying device and converts the rotary motion of the motor into the rotary motion of the second cleaning and drying device in a horizontal plane;
and the controller is connected with the motor so as to control the motor to rotate to enable the second cleaning and drying device to withdraw when the silicon wafer is loaded or unloaded on the vacuum chuck, and to control the motor to rotate to enable the second cleaning and drying device to extend out or to control the motor to stop rotating to enable the second cleaning and drying device to stop at a preset position when the silicon wafer is ground.
In an embodiment of the invention, the grinding device further comprises a conveying device, which is arranged on the workbench and used for grabbing the ground silicon wafer and conveying the silicon wafer to the position above the first cleaning and drying device so as to clean and dry the back surface of the silicon wafer.
The invention provides a grinding mill comprising the grinding apparatus of any one of the above embodiments.
The invention provides a grinding method, which adopts the grinding machine in the embodiment to grind, and the method comprises the following steps:
loading a silicon wafer on a vacuum chuck;
controlling a grinding disc to grind the silicon wafer loaded on the vacuum chuck, and starting a first cleaning device, a second cleaning and drying device and a second cleaning device to clean and cool the ground silicon wafer and the grinding disc;
after grinding is finished, controlling a conveying device to sequentially grab the ground silicon wafers and convey the silicon wafers to the upper side of a first cleaning and drying device, cleaning and drying the back surfaces of the silicon wafers by the first cleaning and drying device, controlling the conveying device to swing back and forth in the drying process, and controlling the first cleaning and drying device to slide back and forth so as to completely clean and dry the back surfaces of the silicon wafers;
after the cleaning is finished, the conveying device is controlled to place the silicon wafer into the storage container, meanwhile, the second cleaning and drying device is controlled to clean and dry the vacuum chuck, and then a new silicon wafer is loaded to carry out next grinding.
In one embodiment of the invention, the method further comprises: and when the silicon wafer is loaded or unloaded on the vacuum chuck, controlling the second cleaning and drying device to withdraw, and when the silicon wafer is ground, controlling the second cleaning and drying device to extend out and stay at a preset position.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the grinding device, the first cleaning device is specially used for cleaning and cooling the grinding area, so that grinding powder is easier to discharge, the cooling effect is enhanced, waste of water resources is reduced, and cleaning is realized while the silicon wafer is ground;
2. according to the grinding device, the ground silicon wafer is grabbed by controlling the conveying device and conveyed above the first cleaning and drying device, the first cleaning and drying device is used for cleaning and drying the back surface of the silicon wafer, the conveying device is controlled to swing back and forth in the drying process, and the first cleaning and drying device is controlled to slide back and forth so as to completely clean and dry the back surface of the silicon wafer, so that the phenomenon that the silicon wafer is broken in the process of cleaning and drying the silicon wafer by utilizing the high-speed rotation of the rotating device is avoided;
3. according to the grinding device, the second cleaning and drying device is arranged to replace the traditional brush for cleaning, so that the grinding powder on the surface of the silicon wafer can be cleaned simultaneously in the grinding process, the grinding wheel mark on the surface of the silicon wafer can be reduced, the damage layer of the silicon wafer is reduced, the surface quality and the nano form of a product are better, the grinding quality is greatly improved, and the TTV (total thickness variation) of the product is also improved;
4. the second cleaning and drying device arranged in the grinding device is simple in structure and convenient to maintain and control, and not only can be used for cleaning and cooling the ground silicon wafer in the grinding process, but also can be used for cleaning and drying the surface of the silicon wafer after the grinding is finished, and in addition, the workbench can be thoroughly cleaned and dried, so that the generation of bad pits is effectively reduced, and the service life of the workbench is prolonged;
5. the grinding device is provided with the second cleaning device for cleaning the main shaft and the grinding teeth of the grinding disc, so that the main shaft and the grinding teeth of the grinding disc in a non-grinding area can be cooled and cleaned in the grinding process, and the service life and the grinding quality of the grinding disc are improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic structural diagram of a conventional polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a polishing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a turntable according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a first cleaning and drying device provided in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a second cleaning and drying device provided in an embodiment of the present invention;
FIG. 6 is a schematic diagram of a silicon wafer during polishing according to an embodiment of the present invention.
Icon: 100-conventional cooling device; 200-a grinding wheel; 300-a cleaning component; a-cleaning the silicon chip; B1/B2-suction cup washing brush; 400-a sucker; 1-a workbench; 2-rotating table; 201-a barrier; 3-vacuum chuck; 4-a grinding disc; 5-a first cleaning device; 6-a first cleaning and drying device; 7-a second cleaning and drying device; 8-a second cleaning device; 9-conveying device.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, a polishing apparatus, a polishing machine and a polishing method according to the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural view of a conventional grinding apparatus according to an embodiment of the present invention, and as shown in the drawing, a conventional cooling apparatus 100 is disposed at an edge of a grinding wheel 200, and during a grinding process, cooling water is sprayed out from the edge of the grinding wheel 200 to cool a grinding area and take away ground powder, since a portion of the grinding wheel 200 actually contacting a silicon wafer is about one fourth of the grinding wheel 200, three quarters of the cooling water are not significantly cooled and drained, the cooling effect and the cleaning capability are poor, and water resources are wasted. The cleaning part 300 in the conventional grinding device comprises a silicon wafer cleaning brush A and two suction cup cleaning brushes B1/B2, the cleaning part 300 does not work when the silicon wafer is ground, after the grinding is finished, the silicon wafer surface after grinding is firstly cleaned by using the silicon wafer cleaning brush A, and then the suction cups 400 are cleaned by sequentially using the two suction cup cleaning brushes B1/B2. The cleaning device has a complex structure, and related control logics are required to be arranged, so that the cleaning device is easy to break down and stop, and the production is influenced. In addition, silicon powder particles are inevitably taken between the bristles of the silicon wafer cleaning brush a during use, and when the silicon wafer is cleaned later, grinding marks are generated on the surface of the silicon wafer by the particles hidden in the bristles. In addition, the two suction cup cleaning brushes B1/B2 are difficult to clean the silicon powder at the edge of the suction cup 400, so that the silicon powder at the edge of the suction cup 400 is not discharged in time with water flow, the suction cup 400 is opened to be vacuum, and when the silicon wafer is unloaded, the silicon powder flows back to the surface of the suction cup 400 with water, and thus a pit defect is easily generated on the surface of the newly loaded silicon wafer. The silicon chip cleaning brush A and the suction cup cleaning brush B1/B2 are abraded in the using process, and the cleaning effect is reduced.
Example one
Referring to fig. 2 and fig. 3 in combination, fig. 2 is a schematic structural diagram of a polishing apparatus according to an embodiment of the present invention; fig. 3 is a schematic structural diagram of a turntable according to an embodiment of the present invention. As shown in the drawings, the polishing apparatus according to the embodiment of the present invention includes: a work table 1; a rotary table 2 arranged on the working table 1; at least one vacuum chuck 3 disposed on the rotary table 2; the grinding disc 4 is positioned above the vacuum chuck 3; a first cleaning device 5 provided on the turntable 2 to clean and cool a polishing region of a portion of the polishing disk 4 in contact with the vacuum chuck 3; and the first cleaning and drying device 6 is movably arranged on the workbench 1 so as to clean and dry the back of the ground silicon wafer.
In this embodiment, the vacuum chuck 3 is used to load a silicon wafer to be polished, the polishing disk 4 is located above the vacuum chuck 3, and the lower surface of the polishing disk is provided with polishing teeth, during the polishing process of the silicon wafer, the vacuum chuck 3 is driven to rotate by a driving mechanism (not shown in the figure), the polishing disk 4 is driven to rotate, the rotation directions of the polishing disk 4 and the vacuum chuck 3 are opposite, the area where the polishing disk 4 contacts with the silicon wafer is a polishing area, and the polishing of the surface of the silicon wafer is completed by the relative movement between the polishing teeth and the silicon wafer.
Alternatively, the first cleaning and drying device 6 is connected to the workbench 1 through a sliding mechanism (not shown in the figure), and the first cleaning and drying device 6 is driven to slide back and forth along a preset sliding track by controlling the driving mechanism.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a first cleaning and drying device according to an embodiment of the present invention. As shown in the drawing, the first cleaning and drying device 6 of the present embodiment is connected to an external air supply device and a water supply device, and the first cleaning and drying device 6 includes two rows of injection holes for injecting water and drying gas. After the silicon wafer is ground, the silicon wafer is conveyed to the position above the first cleaning and drying device 6, the first cleaning and drying device 6 is controlled to spray water and water-gas two-fluid of drying gas to the back of the silicon wafer to clean the back of the silicon wafer, and then the drying gas is sprayed to dry the back of the silicon wafer.
Further, the grinding device of the embodiment further comprises a conveying device 9, which is arranged on the workbench 1 and used for grabbing the ground silicon wafer and conveying the silicon wafer to the upper part of the first cleaning and drying device 6 so as to clean and dry the back surface of the silicon wafer.
Alternatively, the transfer device 9 includes a base and a silicon wafer grasping portion mounted on the base. The base is fixedly installed on the workbench 1, and the silicon wafer grabbing part is movably connected with the base so as to convey the silicon wafer positioned on the vacuum chuck 3 to the upper part of the first cleaning and drying device 6 along a preset track, so that the first cleaning and drying device 6 can conveniently clean and dry the back of the silicon wafer.
The grinding device of this embodiment, snatch the silicon chip after grinding through control conveyer 9 to convey it to first washing drying device 6 top, first washing drying device 6 washs the drying to the silicon chip back. Optionally, the conveying device 9 is controlled to swing back and forth in the drying process, and the first cleaning and drying device 6 is controlled to slide back and forth along a preset sliding track, so that the back of the silicon wafer is completely cleaned and dried. Therefore, the phenomenon that the silicon wafer is broken in the process of cleaning and drying the silicon wafer by utilizing the high-speed rotation of the rotating device is avoided.
Further, a baffle member 201 is provided on the turntable 2, and the two vacuum chucks 3 are symmetrically provided with respect to the baffle member 201. In this embodiment, the first cleaning device 5 is enclosed outside the vacuum chuck 3 to clean and cool the polishing area.
The first cleaning device 5 may be used not only for cleaning and cooling the polishing area during the wafer polishing process, but also for cleaning the vacuum chuck 3. Alternatively, the first cleaning device 5 of the present embodiment may be an atomizing nozzle, a high-pressure nozzle, or a spiral nozzle. The size of the water jet of the first cleaning device 5 can be regulated and controlled by controlling the water pressure or controlling the size of the valve according to the grinding requirement.
The grinding device that this embodiment provided compares the difference with traditional grinder, and the first belt cleaning device 5 that the grinding device of this embodiment set up is special to rinsing and cooling in grinding the region for grind the powder and discharge more easily, realized rinsing when the silicon chip grinds, take away the heat that silicon chip and 4 frictions of abrasive disc produced in addition, can strengthen the cooling effect, still reduced the waste of water resource.
Further, the polishing apparatus of the present embodiment further includes a second cleaning and drying device 7 disposed above the vacuum chuck 3 to clean and dry the vacuum chuck 3 or the silicon wafer loaded on the vacuum chuck 3. The second washing and drying device 7 is connected to the partition 201 via a telescopic device (not shown) to extend or retract the second washing and drying device 7.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a second cleaning and drying device according to an embodiment of the present invention; the second cleaning and drying device 7 of this embodiment is connected to an external air supply device and a water supply device, and is a high-pressure water/gas spraying device, which is in the shape of a strip 150mm long and has a plurality of spraying holes, and can spray at least one row of non-spaced high-pressure water curtains and/or high-pressure drying gas (pressure greater than 0.1 MpA). In the grinding process, controlling the second cleaning and drying device 7 to spray a high-pressure water curtain to clean and cool the surface of the silicon wafer and take away grinding powder; after the grinding is finished, the second cleaning and drying device 7 is controlled to spray the high-pressure water curtain, spray the water and gas two fluids of the drying gas to clean the surface of the silicon wafer, and finally spray the high-pressure drying gas to dry the surface of the silicon wafer. The second cleaning and drying device 7 may perform cleaning and drying operations on the vacuum chuck 3.
The telescoping device that sets up in this embodiment can simplify the operation, when loading or uninstallation silicon chip on vacuum chuck 3, withdraws second cleaning and drying device 7 through control telescoping device, can avoid causing the hindrance to loading or uninstallation silicon chip, stretches out second cleaning and drying device 7 through control telescoping device during the grinding and stops and can carry out the cleaning operation in preset position department.
Specifically, the telescopic device comprises a motor, a transmission mechanism and a controller, wherein the motor provides power for extending or retracting the second cleaning and drying device 7; the transmission mechanism is connected with the motor and the second cleaning and drying device 7, and converts the rotary motion of the motor into the rotary motion of the second cleaning and drying device 7 in the horizontal plane; the controller is connected with the motor and controls the motor to rotate forwards, reversely or stop rotating so as to control the second cleaning and drying device 7 to withdraw when the silicon wafer is loaded or unloaded on the vacuum chuck 3, and control the second cleaning and drying device 7 to extend out and stop at a preset position when the silicon wafer is ground.
It should be noted that the controller controls the motor to stop rotating, so that the second cleaning and drying device 7 can stay at a preset position; the controller controls the motor to rotate forward to enable the second cleaning and drying device 7 to extend out and enable the second cleaning and drying device 7 to retract; the controller controls the motor to rotate reversely to enable the second cleaning and drying device 7 to retract, and also enable the second cleaning and drying device 7 to extend. It should be understood that, in order to connect the second cleaning and drying device 7 with the baffle 201, the telescopic device may be designed independently, or may be provided in the machine itself having the polishing device, as long as the second cleaning and drying device 7 is connected with the baffle 201 through the telescopic device, and the connection mode of the telescopic device is not limited in this embodiment.
The second cleaning and drying device 7 of the grinding device of the embodiment replaces the traditional brush to clean, the second cleaning and drying device 7 can clean the grinding powder on the surface of the silicon wafer in the grinding process, the grinding wheel print on the surface of the silicon wafer can be reduced, the damage layer of the silicon wafer is reduced, the surface quality and the nanometer form of the product are better, the grinding quality of the silicon wafer is greatly improved, and the TTV (total thickness difference) of the product is also improved.
The second cleaning and drying device 7 of the embodiment is simple in structure and convenient to maintain and control, can clean and cool the ground silicon wafer in the grinding process, can clean and dry the surface of the silicon wafer after the grinding is finished, and can clean and dry the vacuum chuck 3 thoroughly, so that the bad pits are effectively reduced, and the service life of the vacuum chuck 3 is prolonged.
Grinding disk 4 is high-speed rotatory in the process of lapping, and about 2000 revolutions per minute, if can not in time cool off the gerar grinding, the gerar grinding is heated and can take place the inflation deformation to cause the abnormal consumption of gerar grinding, shorten grinding disk 4's life, make the grinding quality of silicon chip worsen, grind the mud and drop on vacuum chuck 3 after the main shaft of grinding disk 4 and the lower section accumulation of gerar grinding easily in addition, cause the product pit bad. In view of the above problem, the polishing apparatus of the present embodiment further includes a second cleaning device 8, and the second cleaning device 8 is disposed on the table 1 and below the polishing disk 4 to clean the polishing disk 4 in the non-polishing region.
Specifically, the portion of the polishing platen 4 overlapping the vacuum chuck 3 below the polishing platen in this embodiment is a polishing region, the region outside the turntable 2 is a non-polishing region, and the second cleaning device 8 is located below the polishing platen 4 in the non-polishing region. The second cleaning device 8 comprises a plurality of nozzles, and in the grinding process, the main shaft and the grinding teeth of the grinding disc 4 in the non-grinding area can be cooled and cleaned by spraying cooling water through the nozzles, so that the grinding quality of the silicon wafer can be prevented from being reduced due to the fact that the grinding teeth are heated to expand and deform, the abnormal consumption of the grinding disc 4 can be reduced, and the service life of the grinding disc 4 is prolonged.
Optionally, a plurality of cooling water outlet holes which are uniformly distributed can be further formed in the periphery of the grinding disc 4, and in the grinding process, the cooling water outlet holes spray cooling water, so that the silicon wafer in the grinding area can be better cleaned and cooled.
Referring to fig. 6, fig. 6 is a schematic view of a silicon wafer during polishing according to an embodiment of the present invention. As shown in the figure, firstly, the second cleaning and drying device 7 is retracted by controlling the telescopic device, the silicon wafer to be ground is placed on the vacuum chuck 3 below the grinding disc 4, and after the silicon wafer is loaded, the second cleaning and drying device 7 is extended out and stopped at the preset position, namely above the silicon wafer to be ground, by controlling the telescopic device. Then, the vacuum chuck 3 and the polishing platen 4 are driven to start rotating at high speed, and the first cleaning device 5, the second cleaning and drying device 7, and the second cleaning device 8 are simultaneously turned on. When the silicon wafer is ground, the silicon wafer is cleaned by the non-interval high-pressure water curtain sprayed by the second cleaning and drying device 7, ground silicon powder and falling objects which are automatically taken off by the grinding disc 4 are cleaned and taken away in time, and a grinding and edge grinding cleaning mode is formed. First belt cleaning device 5 cools off the regional silicon chip of grinding, and second belt cleaning device 8 cleans and cools off the regional mill tooth of non-grinding, and at the grinding in-process, the cooling water apopore that sets up all around of abrasive disc 4 sprays cooling water, can wash and cool off the regional silicon chip of grinding better.
After the grinding is finished, the second cleaning and drying device 7 is controlled to spray the high-pressure water curtain, spray the water and gas two fluids of the drying gas to clean the surface of the silicon wafer, and finally spray the high-pressure drying gas to dry the surface of the silicon wafer. After the drying is finished, the second cleaning and drying device 7 is retracted by controlling the telescopic device, the ground silicon wafer is grabbed by controlling the conveying device 9, the ground silicon wafer is conveyed to the upper side of the first cleaning and drying device 6, the back of the silicon wafer is cleaned and dried by the first cleaning and drying device 6, the conveying device 9 is controlled to swing back and forth in the drying process, the first cleaning and drying device 6 is controlled to slide back and forth along the preset sliding rail, and the back of the silicon wafer is completely cleaned and dried.
It should be noted that, after the silicon wafer is taken away, the second cleaning and drying device 7 is extended out and stopped above the vacuum chuck 3 by controlling the telescopic device, the vacuum chuck 3 is driven to start to rotate at a high speed, the second cleaning and drying device 7 is opened, the vacuum chuck 3 is cleaned and dried, and the relative cleaning and drying time can be set according to actual conditions and process requirements. The grinding operation may be continued after the cleaning is completed.
Example two
Embodiments of the present invention further provide a grinding machine, which includes the grinding apparatus according to the first embodiment, and the grinding apparatus has advantages that the grinding machine also has, and details are not described herein.
The embodiment of the invention also provides a grinding method, which is suitable for the grinding machine in the embodiment, and the method comprises the following steps:
s1: loading a silicon wafer on a vacuum chuck;
specifically, the silicon wafer to be ground may be loaded on the vacuum chuck by a robot or an internal transfer device. In addition, before loading the silicon wafer to be ground, warm-up operation, namely idle operation, is carried out firstly, so that the warm-up operation of the equipment is stable, and meanwhile, the second cleaning and drying device is also started to clean and dry the workbench.
S2: controlling a grinding disc to grind the silicon wafer loaded on the vacuum chuck, and starting a first cleaning device, a second cleaning and drying device and a second cleaning device to clean and cool the ground silicon wafer and the grinding disc;
s3: after grinding is finished, controlling a conveying device to sequentially grab the ground silicon wafers and convey the silicon wafers to the upper side of a first cleaning and drying device, cleaning and drying the back surfaces of the silicon wafers by the first cleaning and drying device, controlling the conveying device to swing back and forth in the drying process, and controlling the first cleaning and drying device to slide back and forth so as to completely clean and dry the back surfaces of the silicon wafers;
s4: after the cleaning is finished, the conveying device is controlled to place the silicon wafer into the storage container, meanwhile, the second cleaning and drying device is controlled to clean and dry the vacuum chuck, and then a new silicon wafer is loaded to carry out next grinding.
It should be noted that the second cleaning and drying device is controlled to be retracted when the silicon wafer is loaded or unloaded on the vacuum chuck, and is controlled to be extended and stopped at a predetermined position when the silicon wafer is ground.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A grinding apparatus, comprising:
a table (1);
a rotary table (2) arranged on the workbench (1);
at least one vacuum chuck (3) arranged on the rotary table (2);
a grinding disc (4) positioned above the vacuum chuck (3);
a first cleaning device (5) arranged on the rotating table (2) for cleaning and cooling a grinding area of a contact part of the grinding disc (4) and the vacuum chuck (3);
and the first cleaning and drying device (6) is movably arranged on the workbench (1) to clean and dry the back of the ground silicon wafer.
2. The grinding apparatus according to claim 1, further comprising a second cleaning and drying device (7) disposed above the vacuum chuck (3) to clean and dry the vacuum chuck (3) or the silicon wafer loaded on the vacuum chuck (3).
3. A grinding device according to claim 1, characterized by further comprising a second cleaning device (8), said second cleaning device (8) being arranged on said table (1) below said grinding disc (4) to clean said grinding disc (4) in non-grinding areas.
4. A grinding device according to claim 2, characterized in that a stop member (201) is provided on the rotary table (2), and the two vacuum cups (3) are arranged symmetrically with respect to the stop member (201).
5. A grinding device according to claim 4, characterized in that the second cleaning and drying means (7) are connected to the barrier (201) by telescopic means to extend or retract the second cleaning and drying means (7).
6. The abrading apparatus of claim 5, wherein the telescoping device comprises:
the motor provides power for the extension or retraction of the second cleaning and drying device (7);
the transmission mechanism is connected with the motor and the second cleaning and drying device (7) and converts the rotary motion of the motor into the rotary motion of the second cleaning and drying device (7) in a horizontal plane;
and the controller is connected with the motor so as to control the motor to rotate to enable the second cleaning and drying device (7) to withdraw when the silicon wafer is loaded or unloaded on the vacuum chuck (3), and to control the motor to rotate to enable the second cleaning and drying device (7) to extend when the silicon wafer is ground, or to control the motor to stop rotating to enable the second cleaning and drying device (7) to stay at a preset position.
7. The grinding device according to claim 1, characterized in that the grinding device further comprises a conveying device (9) arranged on the workbench (1) and used for grabbing the ground silicon wafer and conveying the silicon wafer above the first cleaning and drying device (6) so as to clean and dry the back surface of the silicon wafer.
8. A grinding mill comprising a grinding device according to any one of claims 1 to 7.
9. A grinding method characterized by grinding with the grinding machine according to claim 8, comprising:
loading a silicon wafer on a vacuum chuck;
controlling a grinding disc to grind the silicon wafer loaded on the vacuum chuck, and starting a first cleaning device, a second cleaning and drying device and a second cleaning device to clean and cool the ground silicon wafer and the grinding disc;
after grinding is finished, controlling a conveying device to sequentially grab the ground silicon wafers and convey the silicon wafers to the upper side of a first cleaning and drying device, cleaning and drying the back surfaces of the silicon wafers by the first cleaning and drying device, controlling the conveying device to swing back and forth in the drying process, and controlling the first cleaning and drying device to slide back and forth so as to completely clean and dry the back surfaces of the silicon wafers;
after the cleaning is finished, the conveying device is controlled to place the silicon wafer into the storage container, meanwhile, the second cleaning and drying device is controlled to clean and dry the vacuum chuck, and then a new silicon wafer is loaded to carry out next grinding.
10. The grinding method according to claim 9, further comprising: and when the silicon wafer is loaded or unloaded on the vacuum chuck, controlling the second cleaning and drying device to withdraw, and when the silicon wafer is ground, controlling the second cleaning and drying device to extend out and stay at a preset position.
CN202011231876.9A 2020-11-06 2020-11-06 Polishing apparatus, polishing machine, and polishing method Active CN112518573B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011231876.9A CN112518573B (en) 2020-11-06 2020-11-06 Polishing apparatus, polishing machine, and polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011231876.9A CN112518573B (en) 2020-11-06 2020-11-06 Polishing apparatus, polishing machine, and polishing method

Publications (2)

Publication Number Publication Date
CN112518573A true CN112518573A (en) 2021-03-19
CN112518573B CN112518573B (en) 2022-06-07

Family

ID=74979794

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011231876.9A Active CN112518573B (en) 2020-11-06 2020-11-06 Polishing apparatus, polishing machine, and polishing method

Country Status (1)

Country Link
CN (1) CN112518573B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114012597A (en) * 2021-12-01 2022-02-08 浙江晶越半导体有限公司 Silicon carbide grinding device and method
CN114227526A (en) * 2022-02-28 2022-03-25 西安奕斯伟材料科技有限公司 Grinding carrying platform, grinding device, grinding method and silicon wafer
CN115847293A (en) * 2022-12-15 2023-03-28 西安奕斯伟材料科技有限公司 Grinding and cleaning equipment
TWI836650B (en) * 2022-05-17 2024-03-21 大陸商西安奕斯偉材料科技股份有限公司 Static pressure plate of double-side polishing device for silicon wafer and double-side polishing device for silicon wafer

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326205A (en) * 2000-05-16 2001-11-22 Disco Abrasive Syst Ltd Method and device for cleaning chuck table of grinding device
CN1672874A (en) * 2004-03-25 2005-09-28 力晶半导体股份有限公司 Chip grinding stage
KR20060133208A (en) * 2005-06-20 2006-12-26 삼성전자주식회사 Wafer back grinding apparatus using ultrasonic cleaning
CN103522188A (en) * 2012-07-02 2014-01-22 中芯国际集成电路制造(上海)有限公司 Method for arranging grinding pad, grinding pad arranging device and grinder table
CN203426856U (en) * 2013-08-20 2014-02-12 中芯国际集成电路制造(北京)有限公司 Polishing pad arranging device and polishing device
CN106903595A (en) * 2015-12-01 2017-06-30 株式会社迪思科 Lapping device
CN208019988U (en) * 2018-01-11 2018-10-30 苏州通富超威半导体有限公司 Self-cleaning semiconductor crystal wafer milling apparatus
CN110549214A (en) * 2019-08-30 2019-12-10 厦门麦科普睿科技有限公司 Precision grinding and polishing device
CN110802519A (en) * 2018-08-06 2020-02-18 株式会社荏原制作所 Polishing apparatus and polishing method
CN111482858A (en) * 2019-01-25 2020-08-04 株式会社迪思科 Method for using machining device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326205A (en) * 2000-05-16 2001-11-22 Disco Abrasive Syst Ltd Method and device for cleaning chuck table of grinding device
CN1672874A (en) * 2004-03-25 2005-09-28 力晶半导体股份有限公司 Chip grinding stage
KR20060133208A (en) * 2005-06-20 2006-12-26 삼성전자주식회사 Wafer back grinding apparatus using ultrasonic cleaning
CN103522188A (en) * 2012-07-02 2014-01-22 中芯国际集成电路制造(上海)有限公司 Method for arranging grinding pad, grinding pad arranging device and grinder table
CN203426856U (en) * 2013-08-20 2014-02-12 中芯国际集成电路制造(北京)有限公司 Polishing pad arranging device and polishing device
CN106903595A (en) * 2015-12-01 2017-06-30 株式会社迪思科 Lapping device
CN208019988U (en) * 2018-01-11 2018-10-30 苏州通富超威半导体有限公司 Self-cleaning semiconductor crystal wafer milling apparatus
CN110802519A (en) * 2018-08-06 2020-02-18 株式会社荏原制作所 Polishing apparatus and polishing method
CN111482858A (en) * 2019-01-25 2020-08-04 株式会社迪思科 Method for using machining device
CN110549214A (en) * 2019-08-30 2019-12-10 厦门麦科普睿科技有限公司 Precision grinding and polishing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114012597A (en) * 2021-12-01 2022-02-08 浙江晶越半导体有限公司 Silicon carbide grinding device and method
CN114227526A (en) * 2022-02-28 2022-03-25 西安奕斯伟材料科技有限公司 Grinding carrying platform, grinding device, grinding method and silicon wafer
CN114227526B (en) * 2022-02-28 2022-06-07 西安奕斯伟材料科技有限公司 Grinding carrying platform, grinding device, grinding method and silicon wafer
TWI816544B (en) * 2022-02-28 2023-09-21 大陸商西安奕斯偉材料科技股份有限公司 Grinding stage, grinding device, grinding method and silicon wafer
TWI836650B (en) * 2022-05-17 2024-03-21 大陸商西安奕斯偉材料科技股份有限公司 Static pressure plate of double-side polishing device for silicon wafer and double-side polishing device for silicon wafer
CN115847293A (en) * 2022-12-15 2023-03-28 西安奕斯伟材料科技有限公司 Grinding and cleaning equipment

Also Published As

Publication number Publication date
CN112518573B (en) 2022-06-07

Similar Documents

Publication Publication Date Title
CN112518573B (en) Polishing apparatus, polishing machine, and polishing method
TWI680834B (en) Wafer edge grinding device and method
KR100328607B1 (en) Combined slurry dispenser and rinse arm and method of operation
JP3990073B2 (en) Substrate cleaning apparatus and substrate cleaning method
US6783445B2 (en) Polishing apparatus
US9475170B2 (en) Device for cleaning fixed abrasives polishing pad
JP6054805B2 (en) Substrate cleaning device
TW201812928A (en) Apparatus and method for polishing a surface of a substrate
US20030134580A1 (en) Polishing apparatus
CN209125576U (en) Lapping liquid supplies arm and chemical mechanical polishing device
TWI790282B (en) Substrate processing device, substrate processing method, and storage medium
JP2012138498A (en) Cleaning method
CN103878680A (en) Method for reducing wafer scratch, chemical machine grinding machine platform and cleaner
TW201922413A (en) Substrate processing apparatus and substrate processing method capable of removing impurities by bringing a scrubbing tool into sliding contact with the back surface of the substrate
CN105364699B (en) Chemical mechanical polishing method and chemical mechanical polishing equipment
JP3708740B2 (en) Polishing apparatus and polishing method
CN211957605U (en) Highly integrated thinning equipment
CN111633520B (en) Highly integrated thinning equipment
JP2016111265A (en) Buff processing device and substrate processing device
JP2017147334A (en) Device and method for cleaning backside of substrate
KR20090052981A (en) Apparatus for cleaning cmp
KR100884939B1 (en) Apparatus for grinding wafer
JP2003251555A (en) Polishing method
JP6348028B2 (en) Substrate processing equipment
KR100905094B1 (en) Apparatus for grinding wafer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20220628

Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province

Patentee after: Xi'an yisiwei Material Technology Co.,Ltd.

Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065

Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

Patentee before: Xi'an yisiwei Material Technology Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065

Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd.

Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province

Patentee before: Xi'an yisiwei Material Technology Co.,Ltd.

Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

CP03 Change of name, title or address