TWI816544B - Grinding stage, grinding device, grinding method and silicon wafer - Google Patents

Grinding stage, grinding device, grinding method and silicon wafer Download PDF

Info

Publication number
TWI816544B
TWI816544B TW111134254A TW111134254A TWI816544B TW I816544 B TWI816544 B TW I816544B TW 111134254 A TW111134254 A TW 111134254A TW 111134254 A TW111134254 A TW 111134254A TW I816544 B TWI816544 B TW I816544B
Authority
TW
Taiwan
Prior art keywords
grinding
silicon wafers
stage
grinding stage
silicon wafer
Prior art date
Application number
TW111134254A
Other languages
Chinese (zh)
Other versions
TW202304647A (en
Inventor
劉玉乾
Original Assignee
大陸商西安奕斯偉材料科技股份有限公司
大陸商西安奕斯偉矽片技術有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商西安奕斯偉材料科技股份有限公司, 大陸商西安奕斯偉矽片技術有限公司 filed Critical 大陸商西安奕斯偉材料科技股份有限公司
Publication of TW202304647A publication Critical patent/TW202304647A/en
Application granted granted Critical
Publication of TWI816544B publication Critical patent/TWI816544B/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本發明是有關一種研磨載台、研磨裝置、研磨方法及矽片，該研磨載台包括多個承載盤，用於承載矽片； 其中，任意相鄰的兩個承載盤之間設置有隔斷壁； 設置於隔斷壁一側的滾筒毛刷，滾筒毛刷用於刷洗研磨載台和矽片； 相對於滾筒毛刷設置於隔斷壁另一側的液刀，液刀用於防止研磨過程中的研磨廢液外溢至待研磨矽片的表面。The invention relates to a grinding stage, a grinding device, a grinding method and a silicon wafer. The grinding stage includes a plurality of bearing discs for carrying silicon wafers; wherein, a partition wall is provided between any two adjacent bearing discs. ; The roller brush is arranged on one side of the partition wall. The roller brush is used to scrub the grinding stage and the silicon wafer; The liquid knife is arranged on the other side of the partition wall relative to the roller brush. The liquid knife is used to prevent damage during the grinding process. The grinding waste liquid overflows to the surface of the silicon wafer to be ground.

Description

一種研磨載台、研磨裝置、研磨方法及矽片Grinding stage, grinding device, grinding method and silicon wafer

本發明是一種半導體製造技術領域，尤指一種研磨載台、研磨裝置、研磨方法及矽片。The invention is in the technical field of semiconductor manufacturing, and in particular refers to a grinding stage, a grinding device, a grinding method and a silicon wafer.

矽片作為半導體元件製造的材料，是目前緊缺的資源。一般情況下，多晶矽通過重熔拉晶，切片，倒角，研磨，拋光，清洗等步驟後，即可獲得表面光滑平坦，邊緣整齊的晶圓級矽片。其中，研磨步驟是去除矽片切片痕跡，表面損傷層以及釋放前道步驟加工內應力的重要步驟。因此，研磨步驟在整個矽片生產流程中佔據著重要地位。Silicon wafers, as a material for manufacturing semiconductor components, are currently in short supply. Generally, after polycrystalline silicon is remelted, pulled, sliced, chamfered, ground, polished, cleaned and other steps, a wafer-level silicon wafer with a smooth and flat surface and neat edges can be obtained. Among them, the grinding step is an important step to remove the silicon wafer slice traces, surface damage layer and release the internal stress of the previous steps. Therefore, the grinding step plays an important role in the entire silicon wafer production process.

矽片的研磨技術主要是在矽片切割完成後，對其背面的厚度進行減薄以便於後續封裝測試的技術。可以理解地，在矽片的研磨加工過程中能夠提高矽片表面的平坦度以便於進行後續的拋光步驟。但是，相關技術中用於矽片的研磨裝置中需要單獨設置清洗機構，以在矽片研磨開始前及研磨結束後，採用清洗機構對矽片和研磨載台進行清洗，再通過水汽雙流體噴嘴沖洗矽片及研磨載台表面殘留的研磨廢液；相關技術中研磨裝置中包含的機構較多，安裝複雜，容易出現故障進而造成當機，影響矽片的生產效率；同時，相關技術中研磨裝置中相鄰兩個承載盤之間採用條形矽膠條或簡單的板形條刷進行隔斷，這兩種隔斷方式密封性能差，在矽片的研磨過程中容易造成研磨廢液外溢至待研磨的矽片處，造成矽片及承載盤的二次污染。Silicon wafer grinding technology is mainly a technology that reduces the thickness of the backside of the silicon wafer after it is cut to facilitate subsequent packaging testing. It can be understood that during the grinding process of the silicon wafer, the flatness of the surface of the silicon wafer can be improved to facilitate subsequent polishing steps. However, in the related art, the grinding device for silicon wafers needs to be equipped with a separate cleaning mechanism. The cleaning mechanism is used to clean the silicon wafer and the grinding stage before the silicon wafer grinding starts and after the grinding is completed, and then uses the water vapor dual-fluid nozzle to clean the silicon wafer. Rinse the silicon wafer and the grinding waste liquid remaining on the surface of the grinding stage; in the related technology, the grinding device contains many mechanisms, is complex to install, and is prone to malfunctions, which may cause downtime and affect the production efficiency of the silicon wafer; at the same time, in the related technology, the grinding device In the device, two adjacent carrier plates are separated by strips of silicone strips or simple plate-shaped strip brushes. These two partition methods have poor sealing performance and can easily cause the grinding waste liquid to overflow into the ground during the grinding process of the silicon wafers. of silicon wafers, causing secondary contamination of the silicon wafers and the carrier plate.

有鑒於此，本發明提供一種研磨載台、研磨裝置、研磨方法及矽片；能夠節省設計空間的同時，縮短矽片的研磨加工時間，提高了矽片的研磨效率；另一方面，能夠防止研磨廢液發生外溢，降低矽片表面產生凹坑或者水漬的概率。In view of this, the present invention provides a grinding stage, a grinding device, a grinding method and a silicon wafer; it can save design space, shorten the grinding processing time of the silicon wafer, and improve the grinding efficiency of the silicon wafer; on the other hand, it can prevent Grinding waste liquid overflows, reducing the probability of pits or water stains on the surface of the silicon wafer.

本發明例的技術方案是這樣實現的：The technical solution of the present invention is implemented as follows:

第一方面，本發明提供了一種研磨載台，研磨載台包括：多個承載盤，用於承載矽片；其中，任意相鄰兩個承載盤之間設置有隔斷壁；設置於隔斷壁一側的滾筒毛刷，滾筒毛刷用於刷洗研磨載台和矽片；相對於滾筒毛刷設置於隔斷壁另一側的液刀，液刀用於防止研磨過程中的研磨廢液外溢至待研磨矽片的表面。In a first aspect, the present invention provides a grinding carrier. The grinding carrier includes: a plurality of carrier trays for carrying silicon wafers; wherein, a partition wall is provided between any two adjacent carrier trays; The roller brush on the side of the partition wall is used to scrub the grinding stage and the silicon wafer; the liquid knife is arranged on the other side of the partition wall relative to the roller brush, and the liquid knife is used to prevent the grinding waste liquid during the grinding process from overflowing to the surface to be treated. Grind the surface of the silicon wafer.

第二方面，本發明提供了一種研磨裝置，研磨裝置包括：根據第一方面所述的研磨載台；第一驅動機構，用於在研磨過程中驅動研磨載台繞第一軸線X旋轉；研磨頭，用於研磨矽片；第二驅動機構，用於在研磨過程中驅動所述研磨頭繞第二軸線Y旋轉。In a second aspect, the present invention provides a grinding device. The grinding device includes: the grinding stage according to the first aspect; a first driving mechanism for driving the grinding stage to rotate around the first axis X during the grinding process; grinding The head is used for grinding silicon wafers; the second driving mechanism is used to drive the grinding head to rotate around the second axis Y during the grinding process.

第三方面，本發明提供了一種研磨方法，研磨方法能夠應用於第二方面的研磨裝置，研磨方法包括：將多片待研磨矽片分別放置於研磨載台內對應的承載盤中並依次研磨每個承載盤內的矽片；在研磨開始前，打開液刀上的多個水汽雙流體噴嘴，以在矽片的研磨過程中沖洗承載盤內產生的碎屑及研磨廢液；當任一承載盤內的矽片研磨完成後，通過第一驅動機構驅動研磨載台繞第一軸線X旋轉使得承載盤的位置發生交換以研磨下一個承載盤內的矽片；在承載盤的交換過程中，調整滾筒毛刷的下壓量以通過滾筒毛刷刷洗矽片和研磨載台，並通過水汽雙流體噴嘴沖洗研磨完成的矽片及待研磨的矽片。In a third aspect, the present invention provides a grinding method. The grinding method can be applied to the grinding device of the second aspect. The grinding method includes: placing a plurality of silicon wafers to be ground in corresponding carrier disks in the grinding stage and grinding them sequentially. Silicon wafers in each carrier plate; before starting the grinding, open multiple water vapor two-fluid nozzles on the liquid knife to flush the debris and grinding waste liquid generated in the carrier plate during the grinding process of the silicon wafers; when any After the silicon wafer in the bearing plate is ground, the first driving mechanism drives the grinding stage to rotate around the first axis X so that the position of the bearing plate is exchanged to grind the silicon wafer in the next bearing plate; during the exchange process of the bearing plate , adjust the downward pressure of the roller brush to brush the silicon wafer and the grinding stage through the roller brush, and rinse the ground silicon wafer and the silicon wafer to be ground through the water vapor dual-fluid nozzle.

第四方面，本發明提供了一種矽片，所述矽片由第三方面的研磨方法研磨得到。In a fourth aspect, the present invention provides a silicon wafer, which is ground by the grinding method in the third aspect.

本發明提供了一種研磨載台、研磨裝置、研磨方法及矽片；該研磨載台中將滾筒毛刷和液刀集成設置在研磨載台的隔斷壁上，節省了安裝空間。同時，採用液刀攔截研磨廢液，能夠防止研磨廢液外溢至待研磨矽片表面，降低了矽片二次污染的概率。The invention provides a grinding stage, a grinding device, a grinding method and a silicon chip; in the grinding stage, a roller brush and a liquid knife are integrated and arranged on the partition wall of the grinding stage, thereby saving installation space. At the same time, the use of a liquid knife to intercept the grinding waste liquid can prevent the grinding waste liquid from spilling onto the surface of the silicon wafer to be ground, reducing the probability of secondary contamination of the silicon wafer.

下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

參見圖1，其示出了相關技術中研磨裝置1的結構示意圖。如圖1所示，研磨裝置1主要包括：研磨載台11A，用於承載矽片W；第一驅動機構12，用於在研磨過程中驅動研磨載台11A繞第一軸線X旋轉；研磨頭13，用於研磨矽片W的表面；第二驅動機構14，用於在研磨過程中驅動研磨頭13繞第二軸線Y旋轉。Referring to Figure 1, a schematic structural diagram of a grinding device 1 in the related art is shown. As shown in Figure 1, the grinding device 1 mainly includes: a grinding stage 11A, used to carry the silicon wafer W; a first driving mechanism 12, used to drive the grinding stage 11A to rotate around the first axis X during the grinding process; a grinding head 13, for grinding the surface of the silicon wafer W; the second driving mechanism 14, for driving the grinding head 13 to rotate around the second axis Y during the grinding process.

需要說明的是，如圖2所示，研磨載台11A上設置有多個承載盤111，每個承載盤111中均能夠承載一片或多片矽片W，當其中一個承載盤111中的矽片W被研磨頭13研磨時，其餘承載盤111中的矽片W處於待研磨狀態。當任一承載盤111中的矽片W研磨完成後，通過第一驅動機構12驅動研磨載台11繞第一軸線X轉動，以研磨下一個承載盤111中的待研磨矽片W。可以理解地，在具體加工過程中，每個承載盤111內設置有矽片載體（圖中未示出）用於承載矽片W。需要說明的是，在圖2中僅示出了研磨載台11A上限定有兩個承載盤111，但是在本發明實施例中並不限定研磨載台11A上的承載盤111的數量，具體以實際加工需求為準。It should be noted that, as shown in FIG. 2 , a plurality of bearing trays 111 are provided on the grinding stage 11A. Each bearing tray 111 can carry one or more silicon wafers W. When the silicon in one of the bearing trays 111 When the wafer W is polished by the grinding head 13, the remaining silicon wafers W in the carrying tray 111 are in a state to be polished. When the silicon wafer W in any carrier tray 111 is polished, the first driving mechanism 12 drives the grinding stage 11 to rotate around the first axis X to grind the silicon wafer W to be ground in the next carrier tray 111 . It can be understood that during specific processing, a silicon wafer carrier (not shown in the figure) is provided in each carrying tray 111 for carrying the silicon wafer W. It should be noted that FIG. 2 only shows that the grinding stage 11A is limited to two bearing discs 111. However, in the embodiment of the present invention, the number of bearing discs 111 on the grinding stage 11A is not limited. Specifically, Actual processing requirements shall prevail.

此外，如圖1和圖2所示，在相鄰兩個承載盤111的之間的隔斷處設置有隔斷裝置15，以將處於研磨狀態的矽片W與待研磨的矽片W隔斷。可以理解地，在具體研磨加工過程中，當圖2中的承載盤111A中的矽片W處於研磨狀態時，研磨廢液能夠被隔斷裝置15攔截，以避免研磨廢液外溢至承載有待研磨矽片W的承載盤111B中，進而防止待研磨矽片W造成二次污染；但是在研磨裝置1中，隔斷裝置15通常為條形矽膠條或板形條刷，密封性能差，易造成承載盤111A中的研磨廢液在長期研磨加工過程中仍然會外溢至承載盤111B中，以對待研磨的矽片W造成二次污染。In addition, as shown in FIGS. 1 and 2 , a partition device 15 is provided at the partition between two adjacent carrier trays 111 to isolate the silicon wafer W in the polishing state from the silicon wafer W to be polished. It can be understood that during the specific grinding process, when the silicon wafer W in the carrier plate 111A in FIG. 2 is in a grinding state, the grinding waste liquid can be intercepted by the partition device 15 to prevent the grinding waste liquid from overflowing to the silicon wafer to be ground. In the carrier plate 111B of the chip W, thereby preventing the silicon wafer W to be ground from causing secondary pollution; however, in the grinding device 1, the partition device 15 is usually a strip-shaped silicone strip or a plate-shaped strip brush, which has poor sealing performance and is easy to cause damage to the carrier plate The grinding waste liquid in 111A will still overflow into the carrying plate 111B during the long-term grinding process, causing secondary pollution to the silicon wafer W to be ground.

此外，可以理解地，在研磨裝置1中還設置有如圖3所示的清洗機構16，需要說明的是，清洗機構16主要包括毛刷161，刷槽162及第三驅動機構163；其中，毛刷161用於刷洗矽片W及研磨載台11的表面；刷槽162用於容納毛刷161以保濕毛刷161；第三驅動機構163用於驅動毛刷161轉動至矽片W上方以刷洗矽片W，以及驅動毛刷161轉動至刷槽162中以進行保濕操作。In addition, it can be understood that the grinding device 1 is also provided with a cleaning mechanism 16 as shown in Figure 3. It should be noted that the cleaning mechanism 16 mainly includes a brush 161, a brush groove 162 and a third driving mechanism 163; wherein, the cleaning mechanism 16 The brush 161 is used to brush the silicon wafer W and the surface of the grinding stage 11; the brush groove 162 is used to accommodate the brush 161 to moisturize the brush 161; the third driving mechanism 163 is used to drive the brush 161 to rotate above the silicon wafer W to brush The silicon chip W and the driving brush 161 are rotated into the brush groove 162 to perform the moisturizing operation.

另一方面，在相關技術中研磨裝置1中還包括雙流體噴嘴（圖中未示出），用於向研磨完成的矽片W表面噴射去離子水以沖洗矽片W表面殘留的研磨廢液。On the other hand, in the related art, the grinding device 1 also includes a two-fluid nozzle (not shown in the figure), which is used to spray deionized water on the surface of the silicon wafer W after grinding to flush the remaining grinding waste liquid on the surface of the silicon wafer W. .

由上所述，可以理解的是，在相關技術中研磨裝置1，機構較多，安裝過程複雜，容易出現故障以造成停機進而影響生產進度；並且比較多的機構運動也延長了矽片的研磨時間以及矽片研磨作業的節拍時間（tacktime）。因此，參見圖4，其示出了本發明實施例提供的一種研磨載台11，該研磨載台11包括：多個承載盤111，用於承載矽片W；其中，任意相鄰兩個承載盤111之間設置有隔斷壁112；設置於隔斷壁112一側的滾筒毛刷113，滾筒毛刷113用於刷洗研磨載台11和矽片W；相對於滾筒毛刷113設置於隔斷壁112另一側的液刀114，液刀114用於防止研磨過程中研磨廢液外溢至待研磨矽片W表面。From the above, it can be understood that in the related art, the grinding device 1 has many mechanisms, the installation process is complicated, and it is easy to malfunction, causing shutdown and thus affecting the production progress; and the relatively large number of mechanism movements also prolongs the grinding of silicon wafers. time and the tacktime of the silicon wafer grinding operation. Therefore, referring to FIG. 4 , a grinding stage 11 provided by an embodiment of the present invention is shown. The grinding stage 11 includes: a plurality of bearing trays 111 for bearing silicon wafers W; wherein any two adjacent bearing trays 111 A partition wall 112 is provided between the disks 111; a roller brush 113 is arranged on one side of the partition wall 112. The roller brush 113 is used to brush the grinding stage 11 and the silicon wafer W; the roller brush 113 is arranged on the partition wall 112 relative to the roller brush 113. The liquid knife 114 on the other side is used to prevent the grinding waste liquid from overflowing to the surface of the silicon wafer W to be ground during the grinding process.

需要說明的是，在研磨載台11的旋轉過程中，滾筒毛刷113和液刀114不隨著研磨載台11的旋轉而發生轉動。It should be noted that during the rotation of the grinding stage 11 , the roller brush 113 and the liquid knife 114 do not rotate along with the rotation of the grinding stage 11 .

此外，需要說明的是，在具體實施過程中，為了便於安裝和拆卸，可以在隔斷壁112的一側設置如圖4所示的一組滾筒毛刷113；而相對於滾筒毛刷113，在隔斷壁112的另一側設置如圖4所示的一組液刀114。In addition, it should be noted that during the specific implementation process, in order to facilitate installation and disassembly, a set of roller brushes 113 as shown in Figure 4 can be provided on one side of the partition wall 112; and relative to the roller brushes 113, A set of liquid knives 114 as shown in FIG. 4 is provided on the other side of the partition wall 112 .

對於圖4所示的研磨載台11，將滾筒毛刷113和液刀114集成設置在研磨載台11的隔斷壁112上，節省了機構的安裝空間。同時，採用液刀114攔截研磨廢液，能夠防止研磨廢液外溢至待研磨矽片W表面，降低了矽片W二次污染的概率。For the grinding stage 11 shown in Figure 4, the roller brush 113 and the liquid knife 114 are integrated and arranged on the partition wall 112 of the grinding stage 11, which saves the installation space of the mechanism. At the same time, the liquid knife 114 is used to intercept the grinding waste liquid, which can prevent the grinding waste liquid from overflowing to the surface of the silicon wafer W to be ground, and reduces the probability of secondary contamination of the silicon wafer W.

對於圖4所示的研磨載台11，在一些可能的實現方式中，如圖5所示，研磨載台11還包括與滾筒毛刷113連接的控制單元115，控制單元115用於驅動滾筒毛刷113能夠繞自身的軸線Z進行轉動。具體來說，控制單元115可以為電動馬達或者驅動齒輪以驅動滾筒毛刷113高速旋轉，進而有效刷洗矽片W和研磨載台11。需要說明的是，滾筒毛刷113的轉動方向不局限於圖5中所示的逆時針方向，也可以繞順時針方向進行轉動。For the grinding stage 11 shown in Figure 4, in some possible implementations, as shown in Figure 5, the grinding stage 11 also includes a control unit 115 connected to the roller brush 113. The control unit 115 is used to drive the roller brush. The brush 113 is able to rotate about its own axis Z. Specifically, the control unit 115 can be an electric motor or a driving gear to drive the roller brush 113 to rotate at a high speed, thereby effectively brushing the silicon wafer W and the grinding stage 11 . It should be noted that the rotation direction of the roller brush 113 is not limited to the counterclockwise direction shown in FIG. 5 , and may also rotate in the clockwise direction.

對於圖4所示的研磨載台11，在一些可能的實現方式中，如圖5所示，研磨載台11還包括與滾筒毛刷113連接的壓入量調節單元116，壓入量調節單元116用於在研磨結束後通過調整滾筒毛刷113的下降距離以使得滾筒毛刷113與研磨載台11的表面相接觸以刷洗研磨載台11及矽片W。可以理解的是，壓入量調節單元116具體可以為距離感測器，用於檢測滾筒毛刷113表面與研磨載台11表面或者矽片W表面之間的距離，以保證滾筒毛刷113以設定的下降距離壓於研磨載台11的表面，進而對研磨載台11和矽片W進行刷洗。For the grinding stage 11 shown in Figure 4, in some possible implementations, as shown in Figure 5, the grinding stage 11 also includes an intrusion amount adjustment unit 116 connected to the roller brush 113. The intrusion amount adjustment unit 116 is used to brush the grinding stage 11 and the silicon wafer W after grinding by adjusting the descending distance of the roller brush 113 so that the roller brush 113 contacts the surface of the grinding stage 11 . It can be understood that the pressing amount adjustment unit 116 can specifically be a distance sensor for detecting the distance between the surface of the roller brush 113 and the surface of the grinding stage 11 or the surface of the silicon chip W to ensure that the roller brush 113 can The set descending distance is pressed against the surface of the polishing stage 11, thereby brushing the polishing stage 11 and the silicon wafer W.

對於圖4所示的研磨載台11，在一些可能的實現方式中，如圖6所示，液刀114被設置成與研磨載台11表面之間的夾角為45度至60度。需要說明的是，圖6示例性地示出了沿圖4中的實線箭頭B觀察到的液刀114與研磨載台11之間的位置關係。可以理解的是，液刀114與研磨載台11表面之間呈傾斜設置時，在矽片W的研磨過程中，可以最大程度地攔截研磨廢液外溢至暫存有待研磨矽片W的承載盤111，進而防止研磨廢液對暫存待研磨矽片的承載盤111及待研磨矽片W造成二次污染。For the grinding stage 11 shown in FIG. 4 , in some possible implementations, as shown in FIG. 6 , the liquid knife 114 is set at an included angle of 45 degrees to 60 degrees with the surface of the grinding stage 11 . It should be noted that FIG. 6 exemplarily shows the positional relationship between the liquid knife 114 and the grinding stage 11 when viewed along the solid arrow B in FIG. 4 . It can be understood that when the liquid knife 114 and the surface of the grinding stage 11 are arranged at an angle, during the grinding process of the silicon wafer W, the grinding waste liquid can be intercepted to the greatest extent from overflowing to the carrier plate that temporarily stores the silicon wafer W to be ground. 111, thereby preventing the grinding waste liquid from causing secondary pollution to the carrier tray 111 and the silicon wafer W to be ground that temporarily store the silicon wafers to be ground.

對於圖4所示的研磨載台11，在一些可能的實現方式中，如圖4所示，液刀114上設置有多個水汽雙流體噴嘴1141，用於分別向研磨載台11和矽片W噴射去離子水以沖洗矽片W和研磨載台11。For the grinding stage 11 shown in Figure 4, in some possible implementations, as shown in Figure 4, a plurality of water vapor two-fluid nozzles 1141 are provided on the liquid knife 114 for supplying water to the grinding stage 11 and the silicon wafer respectively. W sprays deionized water to rinse the silicon wafer W and the grinding stage 11.

對於上述可能的實現方式，在一些示例中，如圖7所示，研磨載台11還包括與液刀114連接的動力單元117，動力單元117用於保證水汽雙流體噴嘴1141呈常開狀態。可以理解的是，在整個研磨過程中，水汽雙流體噴嘴1141呈常開狀態能夠保證在研磨過程中向承載盤111噴射去離子水以沖洗承載盤111內產生的碎屑及研磨廢液；當研磨結束，研磨載台11需要旋轉以研磨下一個承載盤111內的矽片W，因此在研磨載台11旋轉交換的過程中，水汽雙流體噴嘴1141也能夠噴射去離子水沖洗研磨完成的矽片W和待研磨矽片W，以防止矽片W表面產生凹坑或者殘留水漬等。具體來說，動力單元可以為高壓水泵。Regarding the above possible implementations, in some examples, as shown in FIG. 7 , the grinding stage 11 also includes a power unit 117 connected to the liquid knife 114 . The power unit 117 is used to ensure that the water vapor dual-fluid nozzle 1141 is in a normally open state. It can be understood that during the entire grinding process, the water vapor dual-fluid nozzle 1141 is in a normally open state to ensure that deionized water is sprayed to the bearing plate 111 during the grinding process to flush the debris and grinding waste liquid generated in the bearing plate 111; when After the grinding is completed, the grinding stage 11 needs to rotate to grind the silicon wafer W in the next carrier plate 111. Therefore, during the rotation and exchange process of the grinding stage 11, the water vapor dual-fluid nozzle 1141 can also spray deionized water to rinse the polished silicon. wafer W and the silicon wafer W to be ground to prevent pits or residual water stains on the surface of the silicon wafer W. Specifically, the power unit may be a high-pressure water pump.

其次，如圖8所示，本發明實施例還提供了一種研磨裝置8，研磨裝置8包括：根據前述技術方案所述的研磨載台11；第一驅動機構12，用於在研磨過程中驅動研磨載台11繞第一軸線X旋轉；研磨頭13，用於研磨矽片W；第二驅動機構14，用於在研磨過程中驅動研磨頭13繞第二軸線Y旋轉。Secondly, as shown in Figure 8, the embodiment of the present invention also provides a grinding device 8. The grinding device 8 includes: the grinding stage 11 according to the aforementioned technical solution; a first driving mechanism 12 for driving during the grinding process. The grinding stage 11 rotates around the first axis X; the grinding head 13 is used to grind the silicon wafer W; and the second driving mechanism 14 is used to drive the grinding head 13 to rotate around the second axis Y during the grinding process.

另外，如圖9所示，本發明實施例還提供了一種研磨方法，研磨方法能夠應用於前述技術方案的研磨裝置8，研磨方法包括：In addition, as shown in Figure 9, the embodiment of the present invention also provides a grinding method. The grinding method can be applied to the grinding device 8 of the aforementioned technical solution. The grinding method includes:

S901、將多片待研磨矽片分別放置於研磨載台內對應的承載盤中並依次研磨每個承載盤內的矽片；S902、在研磨開始前，打開液刀上的多個水汽雙流體噴嘴，以在矽片的研磨過程中沖洗承載盤內產生的碎屑及研磨廢液；S903、當任一承載盤內的矽片研磨完成後，通過第一驅動機構驅動研磨載台繞第一軸線X旋轉使得承載盤的位置發生交換以研磨下一個承載盤內的矽片；S904、在承載盤的交換過程中，調整滾筒毛刷的下壓量以通過滾筒毛刷刷洗矽片和研磨載台，並通過水汽雙流體噴嘴沖洗研磨完成的矽片及待研磨的矽片。S901. Place multiple silicon wafers to be ground in corresponding carrier trays in the grinding stage and grind the silicon wafers in each carrier tray in turn; S902. Before starting grinding, open multiple water vapor dual fluids on the liquid knife. The nozzle is used to flush the debris and grinding waste liquid generated in the bearing plate during the grinding process of the silicon wafer; S903. When the silicon wafer in any bearing plate is ground, the first driving mechanism is used to drive the grinding stage to revolve around the first The rotation of the axis stand, and rinse the ground silicon wafers and the silicon wafers to be ground through the water vapor dual-fluid nozzle.

最後，本發明實施例還提供了一種矽片，其主要是根據圖8的研磨方法研磨得到。Finally, embodiments of the present invention also provide a silicon wafer, which is mainly obtained by grinding according to the grinding method in Figure 8 .

需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict.

以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以所述申請專利範圍的保護範圍為準。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field and having ordinary knowledge can easily think of changes or substitutions within the technical scope disclosed in the present invention. All are covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the patent application.

11:研磨載台 11A:研磨載台 12:第一驅動機構 13:研磨頭 14:第二驅動機構 15:隔斷裝置 111:承載盤 111A:承載盤 111B:承載盤 16:清洗機構 161:毛刷 162:刷槽 163:第三驅動機構 112:隔斷壁 113:滾筒毛刷 114:液刀 115:控制單元 1141:水汽雙流體噴嘴 116:壓入量調節單元 117:動力單元 B:實線箭頭 W:矽片 X:第一軸線X Y:第二軸線Y Z:軸線Z 11:Grinding stage 11A:Grinding stage 12:First drive mechanism 13:Grinding head 14:Second drive mechanism 15: Partition device 111: Carrying tray 111A: Bearing tray 111B: Bearing tray 16: Cleaning mechanism 161:Brush 162: Brush slot 163:Third drive mechanism 112:Partition wall 113:Roller brush 114:Liquid Knife 115:Control unit 1141:Water vapor two-fluid nozzle 116: Pressing amount adjustment unit 117:Power unit B: solid arrow W: silicon chip X: first axis X Y: Second axis Y Z: axis Z

圖1為本發明實施例提供的相關技術中研磨裝置結構示意圖； 圖2為本發明實施例提供的相關技術中研磨載台結構示意圖； 圖3為本發明實施例提供的相關技術中研磨裝置中採用的清洗機構結構組成示意圖； 圖4為本發明實施例提供的一種研磨載台結構示意圖； 圖5為本發明實施例提供的壓入量調節單元安裝位置示意圖； 圖6為本發明實施例提供的液刀的安裝位置示意圖； 圖7為本發明實施例提供的另一種研磨載台結構示意圖； 圖8為本發明實施例提供的一種研磨裝置結構示意圖； 圖9為本發明實施例提供的一種研磨方法流程示意圖。 Figure 1 is a schematic structural diagram of a grinding device in related technology provided by an embodiment of the present invention; Figure 2 is a schematic structural diagram of a grinding stage in related technology provided by an embodiment of the present invention; Figure 3 is a schematic structural diagram of the cleaning mechanism used in the grinding device in the related technology provided by the embodiment of the present invention; Figure 4 is a schematic structural diagram of a grinding stage provided by an embodiment of the present invention; Figure 5 is a schematic diagram of the installation position of the intrusion amount adjustment unit provided by the embodiment of the present invention; Figure 6 is a schematic diagram of the installation position of the liquid knife provided by the embodiment of the present invention; Figure 7 is a schematic structural diagram of another grinding stage provided by an embodiment of the present invention; Figure 8 is a schematic structural diagram of a grinding device provided by an embodiment of the present invention; Figure 9 is a schematic flow chart of a grinding method provided by an embodiment of the present invention.

11:研磨載台 11:Grinding stage

111:承載盤 111: Carrying tray

112:隔斷壁 112:Partition wall

113:滾筒毛刷 113:Roller brush

114:液刀 114:Liquid Knife

1141:水汽雙流體噴嘴 1141:Water vapor two-fluid nozzle

13:研磨頭 13:Grinding head

B:實線箭頭 B: solid arrow

Claims (8)

一種研磨載台，其主要包括：多個承載盤，用於承載矽片；其中任意相鄰的兩個該等承載盤之間設置有隔斷壁；設置於該等隔斷壁一側的滾筒毛刷，該等滾筒毛刷用於刷洗該研磨載台和該等矽片；與該滾筒毛刷集成設置在隔斷壁上，且相對於該等滾筒毛刷設置於該等隔斷壁另一側的液刀，該等液刀用於防止研磨過程中的研磨廢液外溢至待研磨之該等矽片的表面；其中，該等液刀被設置成與該研磨載台表面之間的夾角為45度至60度；其中，在該研磨載台的旋轉過程中，該滾筒毛刷和該液刀不隨著該研磨載台的旋轉而發生轉動。 A grinding carrier, which mainly includes: a plurality of carrier disks for carrying silicon wafers; a partition wall is provided between any two adjacent carrier disks; a roller brush provided on one side of the partition walls , the roller brushes are used to scrub the grinding stage and the silicon wafers; they are integrated with the roller brushes on the partition wall, and are arranged on the liquid on the other side of the partition wall relative to the roller brushes. Knives, these liquid knives are used to prevent the grinding waste liquid during the grinding process from overflowing to the surface of the silicon wafers to be ground; wherein, the liquid knives are set at an angle of 45 degrees with the surface of the grinding stage. to 60 degrees; wherein, during the rotation of the grinding stage, the roller brush and the liquid knife do not rotate with the rotation of the grinding stage. 如請求項1所述的研磨載台，該研磨載台還包括與該等滾筒毛刷連接的控制單元，該等控制單元用於驅動該等滾筒毛刷能夠繞自身的軸線Z進行轉動。 As claimed in claim 1, the grinding stage further includes a control unit connected to the roller brushes, and the control units are used to drive the roller brushes to rotate around their own axis Z. 如請求項1所述的研磨載台，該研磨載台還包括與該等滾筒毛刷連接的壓入量調節單元，該等壓入量調節單元用於在研磨結束後通過調整該等滾筒毛刷的下降距離以使得該等滾筒毛刷與該研磨載台的表面相接觸以刷洗該研磨載台及該等矽片。 The grinding stage as described in claim 1, which further includes an intrusion amount adjustment unit connected to the roller brushes, and the intrusion amount adjustment units are used to adjust the roller bristles after grinding. The descending distance of the brush is such that the roller brushes come into contact with the surface of the grinding stage to brush the grinding stage and the silicon wafers. 如請求項1所述的研磨載台，其中該等液刀上設置有多個水汽雙流體噴嘴，用於分別向該研磨載台和該等矽片噴射去離子水以沖洗該等矽片和該研磨載台。 The grinding stage as described in claim 1, wherein the liquid knives are provided with a plurality of water vapor two-fluid nozzles for spraying deionized water to the grinding stage and the silicon wafers respectively to rinse the silicon wafers and The grinding stage. 如請求項4所述的研磨載台，其中該研磨載台還包括與該等液刀連接的動力單元，該等動力單元用於保證該等水汽雙流體噴嘴呈常開狀態。 The grinding stage as described in claim 4, wherein the grinding stage further includes a power unit connected to the liquid knives, and the power units are used to ensure that the water vapor dual-fluid nozzles are in a normally open state. 一種研磨裝置，其主要包括：如請求項1至5任一項中所述的研磨載台；第一驅動機構，用於在研磨過程中驅動該研磨載台繞第一軸線X旋轉；研磨頭，用於研磨該等矽片；第二驅動機構，用於在研磨過程中驅動該研磨頭繞第二軸線Y旋轉。 A grinding device, which mainly includes: a grinding stage as described in any one of claims 1 to 5; a first driving mechanism for driving the grinding stage to rotate around the first axis X during the grinding process; a grinding head , used to grind the silicon wafers; the second driving mechanism is used to drive the grinding head to rotate around the second axis Y during the grinding process. 一種研磨方法，該研磨方法應用於如請求項6所述的研磨裝置，其步驟包括：將多片待研磨矽片分別放置於該研磨載台內對應的該等承載盤中並依次研磨該等承載盤內的該等矽片；在研磨開始前，打開該等液刀上的該等水汽雙流體噴嘴，以在該等矽片的研磨過程中沖洗該等承載盤內產生的碎屑及研磨廢液；當任一該等承載盤內的該等矽片研磨完成後，通過該第一驅動機構驅動該研磨載台繞第一軸線X旋轉使得該等承載盤的位置發生交換以研磨下一個該等承載盤內的該等矽片；在該等承載盤的交換過程中，調整該等滾筒毛刷的下壓量以通過該等滾筒毛刷刷洗該等矽片和該研磨載台，並通過該等水汽雙流體噴嘴沖洗研磨完成的該等矽片及待研磨的該等矽片。 A grinding method, which is applied to the grinding device as described in claim 6. The steps include: placing a plurality of silicon wafers to be ground in the corresponding bearing disks in the grinding stage and grinding the silicon wafers in sequence. The silicon wafers in the carrier plate; before starting the grinding, open the water vapor two-fluid nozzles on the liquid knives to flush away the debris and grinding generated in the carrier plate during the grinding process of the silicon wafers. Waste liquid; after the grinding of the silicon wafers in any of the carrier trays is completed, the first driving mechanism drives the grinding stage to rotate around the first axis X so that the positions of the carrier trays are exchanged to grind the next one. the silicon wafers in the carrier trays; during the exchange process of the carrier trays, adjust the downward pressure of the roller brushes to brush the silicon wafers and the grinding stage through the roller brushes, and The silicon wafers that have been ground and the silicon wafers that are to be ground are washed through the water vapor two-fluid nozzles. 一種矽片，其主要由如請求項7所述的研磨方法研磨得到。 A silicon wafer, which is mainly obtained by grinding according to the grinding method described in claim 7.
TW111134254A 2022-02-28 2022-09-12 Grinding stage, grinding device, grinding method and silicon wafer TWI816544B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210188211.7 2022-02-28
CN202210188211.7A CN114227526B (en) 2022-02-28 2022-02-28 Grinding carrying platform, grinding device, grinding method and silicon wafer

Publications (2)

Publication Number Publication Date
TW202304647A TW202304647A (en) 2023-02-01
TWI816544B true TWI816544B (en) 2023-09-21

Family

ID=80748292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111134254A TWI816544B (en) 2022-02-28 2022-09-12 Grinding stage, grinding device, grinding method and silicon wafer

Country Status (2)

Country Link
CN (1) CN114227526B (en)
TW (1) TWI816544B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114800104B (en) * 2022-05-30 2024-02-23 西安奕斯伟材料科技股份有限公司 Single-side thinning method and single-side thinning equipment
CN117878026A (en) * 2024-03-12 2024-04-12 西安奕斯伟材料科技股份有限公司 Silicon wafer cleaning equipment and silicon wafer cleaning method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020007840A1 (en) * 2000-07-21 2002-01-24 Koji Atoh Substrate cleaning apparatus, substrate cleaning method and substrate processing apparatus
TW565486B (en) * 2001-03-09 2003-12-11 Promos Technologies Inc Chemical mechanical polishing device and method for cleaning the same
CN105081957A (en) * 2014-05-14 2015-11-25 和舰科技(苏州)有限公司 Chemical mechanical polishing method for wafer planarization production
CN205674013U (en) * 2016-05-31 2016-11-09 中芯国际集成电路制造（天津）有限公司 Clean device and chemical mechanical polishing device
JP6144531B2 (en) * 2013-04-23 2017-06-07 株式会社荏原製作所 Substrate processing apparatus and manufacturing method of processing substrate
CN107791115A (en) * 2016-09-06 2018-03-13 株式会社迪思科 Processing unit (plant)
TWI670763B (en) * 2014-02-20 2019-09-01 美商恩特葛瑞斯股份有限公司 Brush for clearing wafers after a cmp process and method thereof
TWI715554B (en) * 2015-02-18 2021-01-11 日商荏原製作所股份有限公司 Substrate cleaning apparatus, substrate cleaning method, and substrate processing apparatus
CN112518573A (en) * 2020-11-06 2021-03-19 西安奕斯伟硅片技术有限公司 Polishing apparatus, polishing machine, and polishing method
CN113161223A (en) * 2020-01-07 2021-07-23 夏泰鑫半导体(青岛)有限公司 Method and system for processing wafer with polycrystalline silicon layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105983890B (en) * 2015-01-30 2018-06-29 中芯国际集成电路制造(上海)有限公司 Chemical-mechanical grinding device and method
KR102399356B1 (en) * 2017-03-10 2022-05-19 삼성전자주식회사 Substrate, method of sawing substrate, and semiconductor device
JP7166817B2 (en) * 2018-07-12 2022-11-08 株式会社荏原製作所 SUBSTRATE TRANSPORTER AND SUBSTRATE PROCESSING APPARATUS INCLUDING SUBSTRATE TRANSPORTER
CN111451938B (en) * 2020-04-08 2021-11-12 西安奕斯伟材料科技有限公司 Polishing carrier cleaning device and polishing carrier cleaning method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020007840A1 (en) * 2000-07-21 2002-01-24 Koji Atoh Substrate cleaning apparatus, substrate cleaning method and substrate processing apparatus
TW565486B (en) * 2001-03-09 2003-12-11 Promos Technologies Inc Chemical mechanical polishing device and method for cleaning the same
JP6144531B2 (en) * 2013-04-23 2017-06-07 株式会社荏原製作所 Substrate processing apparatus and manufacturing method of processing substrate
TWI670763B (en) * 2014-02-20 2019-09-01 美商恩特葛瑞斯股份有限公司 Brush for clearing wafers after a cmp process and method thereof
CN105081957A (en) * 2014-05-14 2015-11-25 和舰科技(苏州)有限公司 Chemical mechanical polishing method for wafer planarization production
TWI715554B (en) * 2015-02-18 2021-01-11 日商荏原製作所股份有限公司 Substrate cleaning apparatus, substrate cleaning method, and substrate processing apparatus
CN205674013U (en) * 2016-05-31 2016-11-09 中芯国际集成电路制造（天津）有限公司 Clean device and chemical mechanical polishing device
CN107791115A (en) * 2016-09-06 2018-03-13 株式会社迪思科 Processing unit (plant)
CN113161223A (en) * 2020-01-07 2021-07-23 夏泰鑫半导体(青岛)有限公司 Method and system for processing wafer with polycrystalline silicon layer
CN112518573A (en) * 2020-11-06 2021-03-19 西安奕斯伟硅片技术有限公司 Polishing apparatus, polishing machine, and polishing method

Also Published As

Publication number Publication date
TW202304647A (en) 2023-02-01
CN114227526A (en) 2022-03-25
CN114227526B (en) 2022-06-07

Similar Documents

Publication Publication Date Title
TWI816544B (en) Grinding stage, grinding device, grinding method and silicon wafer
US6202658B1 (en) Method and apparatus for cleaning the edge of a thin disc
TW544772B (en) Apparatus and method for substrate preparation implementing a surface tension reducing process
TW202220094A (en) Substrate treatment device, substrate treatment method and recording medium
JPH10294303A (en) Substrate treating device
TW201515080A (en) Substrate processing system, substrate processing method, and computer storage medium
JP6375166B2 (en) Double-sided buff module for post-CMP cleaning
JP2008311481A (en) Substrate cleaning method, substrate cleaning device, and semiconductor manufacturing method
CN115863227A (en) Wafer fine cleaning tool and using method thereof
TW201246318A (en) Method for cleaning a semiconductor wafer
JP3892635B2 (en) Cleaning device
JP4451429B2 (en) Cleaning device
TWI396226B (en) Apparatus for supplying chemical liquid
JP4308832B2 (en) Substrate cleaning apparatus and substrate cleaning method
JP3762180B2 (en) Cleaning device
KR20110064608A (en) Wafer cleaning apparatus with spin scrubber and cleaning method thereof
JPH10289889A (en) Substrate treatment apparatus
KR101099591B1 (en) Disk unit for cleaning a substrate and cleaning apparatus having the same
JP2006332386A (en) Device and method for washing substrate
JP3762176B2 (en) Cleaning device
CN217317569U (en) Device for cleaning polishing disc
CN218556488U (en) Carborundum wafer grinding and polishing equipment
JPH10223581A (en) Scrub cleaning member and substrate-treating device using it
CN219483698U (en) Pre-cleaning device for chemical mechanical polishing equipment
CN103100968B (en) Chemical mechanical polishing device and the method using this device to grind silicon chip