TWI836650B - Static pressure plate of double-side polishing device for silicon wafer and double-side polishing device for silicon wafer - Google Patents
Static pressure plate of double-side polishing device for silicon wafer and double-side polishing device for silicon wafer Download PDFInfo
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- TWI836650B TWI836650B TW111137844A TW111137844A TWI836650B TW I836650 B TWI836650 B TW I836650B TW 111137844 A TW111137844 A TW 111137844A TW 111137844 A TW111137844 A TW 111137844A TW I836650 B TWI836650 B TW I836650B
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- silicon wafer
- static pressure
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- plate body
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 132
- 239000010703 silicon Substances 0.000 title claims abstract description 132
- 230000003068 static effect Effects 0.000 title claims abstract description 71
- 238000005498 polishing Methods 0.000 title claims description 16
- 238000000227 grinding Methods 0.000 claims abstract description 41
- 239000012530 fluid Substances 0.000 claims abstract description 25
- 230000002706 hydrostatic effect Effects 0.000 claims abstract description 9
- 239000011148 porous material Substances 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 97
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000007921 spray Substances 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 239000007779 soft material Substances 0.000 claims description 2
- 238000000462 isostatic pressing Methods 0.000 claims 1
- 239000000356 contaminant Substances 0.000 description 12
- 238000001179 sorption measurement Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002893 slag Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明公開了一種矽片雙面研磨裝置的靜壓板及矽片雙面研磨裝置，其主要包括：板體，板體形成有通孔，通孔用於使流體在壓力的作用下穿過板體流動至矽片與板體之間，使得矽片能夠通過流體靜壓被支撐以便進行研磨；嵌入在板體中的嵌入件，嵌入件貫穿板體並且由多孔材料製成，使得流體在壓力的作用下還穿過嵌入件滲流，並且嵌入件從板體沿著滲流方向凸起，使得當矽片壓靠靜壓板時僅與嵌入件接觸。The invention discloses a static pressure plate of a silicon wafer double-sided grinding device and a silicon wafer double-sided grinding device, which mainly include: a plate body, the plate body is formed with a through hole, and the through hole is used to allow fluid to pass through under the action of pressure The plate body flows between the silicon sheet and the plate body so that the silicon sheet can be supported by hydrostatic pressure for grinding; an insert embedded in the plate body penetrates the plate body and is made of porous material so that the fluid can Under the action of pressure, seepage also occurs through the insert, and the insert protrudes from the plate body along the seepage direction, so that when the silicon sheet is pressed against the static pressure plate, it only contacts the insert.
Description
本發明有關半導體矽片生產領域，尤指一種矽片雙面研磨裝置的靜壓板及矽片雙面研磨裝置。The invention relates to the field of semiconductor silicon wafer production, and in particular, to a static pressure plate and a silicon wafer double-sided grinding device.
半導體矽片的生產技術通常包括拉晶、線切割、研磨、拋光等處理過程。其中對於雙面研磨技術而言，矽片被夾置在兩個靜壓板之間，以便使矽片能夠在不與兩個靜壓板接觸的情況下通過每個靜壓板與矽片之間的流體的靜壓而得到支撐，在矽片被支撐後便可以利用對置的磨輪對矽片的兩個主表面進行研磨。The production technology of semiconductor silicon wafers usually includes processes such as crystal pulling, wire cutting, grinding, and polishing. For double-sided grinding technology, the silicon wafer is sandwiched between two static pressure plates so that the silicon wafer can be supported by the static pressure of the fluid between each static pressure plate and the silicon wafer without contacting the two static pressure plates. After the silicon wafer is supported, the two main surfaces of the silicon wafer can be ground using opposing grinding wheels.
對於上述的研磨技術而言，通常需要將矽片壓靠在靜壓板上，比如矽片研磨完成後需要將矽片從研磨裝置取出時，帶有吸盤的取出裝置需要將一定的作用力作用於矽片吸盤才能夠完成對矽片的吸附，此時矽片的反作用力便需要由靜壓板提供，而對於利用真空吸附作用的取出裝置而言，首先需要靜壓板的真空吸附通孔產生的吸附作用使矽片被吸附在靜壓板上，在取出裝置也完成對矽片的吸附後，靜壓板的吸附作用可以解除，之後取出裝置可以將矽片取出。For the above-mentioned grinding technology, it is usually necessary to press the silicon wafer against the static pressure plate. For example, when the silicon wafer needs to be taken out from the grinding device after grinding, the take-out device with a suction cup needs to exert a certain force. The silicon wafer can be adsorbed only by the silicon wafer suction cup. At this time, the reaction force of the silicon wafer needs to be provided by the static pressure plate. For the take-out device that uses vacuum adsorption, the vacuum adsorption through hole of the static pressure plate is first needed. The generated adsorption effect causes the silicon wafer to be adsorbed on the static pressure plate. After the removal device completes adsorption of the silicon wafer, the adsorption effect of the static pressure plate can be released, and then the removal device can take out the silicon wafer.
但是在矽片的研磨過程中，例如矽渣之類的污染物會附著在靜壓板上，在這種情況下，壓靠靜壓板的矽片便會受到划傷、污染之類的損傷，對研磨完成的矽片的品質及後續處理技術帶來極大的不利影響。However, during the grinding process of silicon wafers, contaminants such as silicon slag will adhere to the static pressure plate. In this case, the silicon wafers pressed against the static pressure plate will be damaged by scratches, contamination, etc. , which has a great adverse impact on the quality of the ground silicon wafers and subsequent processing technology.
為解決上述技術問題，本發明提供一種矽片雙面研磨裝置的靜壓板及矽片雙面研磨裝置，能夠實現即使矽片因技術需求需要壓靠靜壓板，也不會受到損傷，由此極大的提高研磨完成後的矽片的品質，並有利於後續處理技術的實施。In order to solve the above technical problems, the present invention provides a static pressure plate of a silicon wafer double-side polishing device and a silicon wafer double-side polishing device, which can achieve that even if the silicon wafer needs to be pressed against the static pressure plate due to technical requirements, it will not be damaged, thereby greatly improving the quality of the silicon wafer after polishing and facilitating the implementation of subsequent processing technology.
本發明的技術方案是這樣實現的：第一方面，本發明提供了一種矽片雙面研磨裝置的靜壓板，其主要包括：板體，板體形成有通孔，通孔用於使流體在壓力的作用下穿過板體流動至矽片與板體之間，使得矽片能夠通過流體靜壓被支撐以便進行研磨；嵌入在板體中的嵌入件，嵌入件貫穿板體並且由多孔材料製成，使得流體在壓力的作用下還穿過嵌入件滲流，並且嵌入件從板體沿著滲流方向凸起，使得當矽片壓靠靜壓板時僅與嵌入件接觸。The technical solution of the present invention is implemented as follows: In the first aspect, the present invention provides a static pressure plate for a double-sided grinding device for a silicon wafer, which mainly includes: a plate body, the plate body is formed with through holes, and the through holes are used to allow the fluid to pass through the plate body and flow to between the silicon wafer and the plate body under the action of pressure, so that the silicon wafer can be supported by the static pressure of the fluid for grinding; an insert embedded in the plate body, the insert penetrates the plate body and is made of porous material, so that the fluid also permeates through the insert under the action of pressure, and the insert protrudes from the plate body along the permeation direction, so that when the silicon wafer is pressed against the static pressure plate, it only contacts the insert.
第二方面，本發明提供了一種矽片雙面研磨裝置，矽片雙面研磨裝置包括兩個靜壓板，兩個靜壓板用於在矽片的不同側為矽片提供流體靜壓，其中，兩個靜壓板中的至少一者為根據第一方面的靜壓板。In a second aspect, the invention provides a silicon wafer double-sided grinding device. The silicon wafer double-sided grinding device includes two static pressure plates. The two static pressure plates are used to provide hydrostatic pressure for the silicon wafer on different sides of the silicon wafer. Wherein, at least one of the two static pressure plates is the static pressure plate according to the first aspect.
本發明提供了一種矽片雙面研磨裝置的靜壓板及矽片雙面研磨裝置，即使在矽片的研磨過程中，會有例如矽渣之類的污染物附著在靜壓板上，但由於用於產生流體清壓的流體會穿過嵌入件滲流，因此附著到嵌入件的污染物也會被滲流的流體沖刷而從嵌入件離開或者去除，或者說嵌入件能夠通過流體實現“自清潔”，而當矽片壓靠靜壓板時，由於只與清潔的嵌入件接觸而不與板體接觸，因此矽片也不會受到比如可能附著在板體上的污染物的損傷，有利於提高完成研磨的矽片的品質及後續處理技術的實施。The invention provides a static pressure plate of a silicon wafer double-sided grinding device and a silicon wafer double-sided grinding device. Even during the grinding process of silicon wafers, contaminants such as silicon slag will adhere to the static pressure plate. Since the fluid used to generate fluid clearing pressure will seep through the insert, contaminants attached to the insert will also be washed away or removed from the insert by the seeping fluid. In other words, the insert can achieve "self-cleaning" through the fluid. ”, and when the silicon chip is pressed against the static pressure plate, since it only contacts the clean insert and not the plate body, the silicon chip will not be damaged by contaminants that may be attached to the plate body, which is conducive to Improve the quality of ground silicon wafers and implement subsequent processing technology.
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整的描述。The following will provide a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention.
參見圖1，本發明實施例提供了一種矽片雙面研磨裝置的靜壓板10，靜壓板10在矽片雙面研磨裝置中的作用是為矽片W提供流體靜壓，也就是說使矽片W在不與任何固定接觸的情況下也能夠實現被支撐以便於研磨的實施，具體的，其主要包括：板體11，板體11形成有通孔11A，如在圖1中通過板體11內部的虛線示意性的示出的，並且在圖1中示例性的示出了三個通孔11A，通孔11A用於使流體F在壓力的作用下穿過板體11流動至矽片W與板體11之間，如在圖1中通過通孔11A處的直線箭頭示意性的示出的，使得矽片W能夠通過流體靜壓被支撐以便進行研磨，事實上在雙面研磨裝置中，矽片W的不同側都提供有流體靜壓，如在圖1中示出的，根據本發明的實施例的靜壓板10與另一靜壓板20分別設置在矽片W的不同側並共同為矽片W提供流體靜壓；嵌入在板體11中的嵌入件12，嵌入件12貫穿板體11並且由多孔材料製成，使得流體F在壓力的作用下還穿過嵌入件12滲流，如在圖1中通過嵌入件12處的曲線箭頭示意性的示出的，並且嵌入件12從板體11沿著滲流方向凸起，如在圖1中通過點填充的區域示意性的示出的，使得當矽片W壓靠靜壓板10時，例如在圖1中示出的，矽片W沿著空心箭頭的方向從通過實線示出的位置移動至通過虛線示出的位置時，僅與嵌入件12接觸而不與板體11接觸。Referring to Figure 1, an embodiment of the present invention provides a static pressure plate 10 of a silicon wafer double-sided grinding device. The function of the static pressure plate 10 in the silicon wafer double-sided grinding device is to provide hydrostatic pressure for the silicon wafer W, that is to say The silicon chip W can be supported for grinding without being in any fixed contact. Specifically, it mainly includes: a plate body 11. The plate body 11 is formed with a through hole 11A, as shown in Figure 1 by The dotted lines inside the plate body 11 are schematically shown, and three through holes 11A are exemplarily shown in FIG. 1 , and the through holes 11A are used to allow the fluid F to flow through the plate body 11 under the action of pressure. Between the silicon sheet W and the plate body 11, as schematically shown in FIG. 1 by the straight arrow at the through hole 11A, the silicon sheet W can be supported by hydrostatic pressure for grinding. In fact, on both sides In the grinding device, different sides of the silicon chip W are provided with hydrostatic pressure. As shown in FIG. 1 , a static pressure plate 10 and another static pressure plate 20 according to an embodiment of the present invention are respectively disposed on the silicon chip W. Different sides of the silicon chip W jointly provide hydrostatic pressure for the silicon chip W; the insert 12 embedded in the plate body 11 penetrates the plate body 11 and is made of porous material, so that the fluid F can also pass through under the action of pressure The insert 12 percolates, as is schematically shown in FIG. 1 by the curved arrow at the insert 12 , and the insert 12 projects from the plate body 11 in the direction of percolation, as in FIG. 1 by the dot-filled area. It is shown schematically such that when the silicon wafer W is pressed against the static pressure plate 10 , for example as shown in FIG. 1 , the silicon wafer W moves in the direction of the hollow arrow from the position shown by the solid line to the position shown by the dotted line. In the position shown, it is only in contact with the insert 12 and not with the plate body 11 .
這樣，即使在矽片W的研磨過程中，會有例如矽渣之類的污染物附著在靜壓板10上，但由於用於產生流體清壓的流體F會穿過嵌入件12滲流，因此附著到嵌入件12的污染物也會被滲流的流體沖刷而從嵌入件12離開或者去除，或者說嵌入件12能夠通過流體F實現“自清潔”，而當矽片W壓靠靜壓板10時，由於只與清潔的嵌入件12接觸而不與板體11接觸，因此矽片W也不會受到比如可能附著在板體11上的污染物的損傷，有利於提高完成研磨的矽片W的品質及後續處理技術的實施。In this way, even if there are contaminants such as silicon slag attached to the static pressure plate 10 during the grinding process of the silicon wafer W, the fluid F used to generate fluid clear pressure will seep through the insert 12, so The contaminants attached to the insert 12 will also be washed away or removed from the insert 12 by the seeping fluid. In other words, the insert 12 can achieve "self-cleaning" by the fluid F. When the silicon chip W presses against the static pressure plate 10 At this time, since it is only in contact with the clean insert 12 and not with the plate body 11, the silicon wafer W will not be damaged by contaminants that may be attached to the plate body 11, which is beneficial to improving the polished silicon wafer W. The quality and implementation of subsequent processing technology.
對於嵌入件12從板體11凸起的高度而言，該高度如果太大的話不利於流體靜壓的產生，而如果太小又有可能因矽片W的變形而導致矽片W接觸到板體11，仍然無法避免矽片W受到附著於板體11的污染物的損傷。對此，在本發明的可選實施例中，嵌入件12凸起的高度可以為1mm至2mm，以便於不僅能夠不影響流體靜壓的產生而且足以避免矽片W接觸到板體11。As for the height of the protrusion of the insert 12 from the plate 11, if the height is too large, it is not conducive to the generation of fluid static pressure, while if it is too small, the silicon wafer W may contact the plate 11 due to deformation of the silicon wafer W, and it is still impossible to prevent the silicon wafer W from being damaged by pollutants attached to the plate 11. In this regard, in an optional embodiment of the present invention, the protrusion height of the insert 12 can be 1 mm to 2 mm, so as not to affect the generation of fluid static pressure and to prevent the silicon wafer W from contacting the plate 11.
由於矽片W是會壓靠至靜壓板10的，更具體的如上所述會壓靠至嵌入件12，因此，儘管嵌入件12並不會附著污染物，但如果嵌入件12具有較高的硬度的話，矽片W在較大的壓力作用下仍然有可能受到損傷。對此，在本發明的可選實施例中，為了進一步避免矽片W的損傷，嵌入件12可以由軟質材料製成，這樣當矽片W壓靠至嵌入件12時可以避免受到因嵌入件12的大硬度而受到損傷。Since the silicon wafer W will be pressed against the static pressure plate 10, more specifically, it will be pressed against the embedded part 12 as mentioned above. Therefore, although the embedded part 12 will not adhere to contaminants, if the embedded part 12 has a higher If the hardness is high, the silicon chip W may still be damaged under greater pressure. In this regard, in an optional embodiment of the present invention, in order to further avoid damage to the silicon chip W, the insert 12 can be made of a soft material, so that when the silicon chip W is pressed against the insert 12, damage due to the insert 12 can be avoided. 12 large hardness and was damaged.
對於既可以作為多孔材料使用又具有軟質特性的嵌入件12的材質而言，嵌入件12可以由發泡聚氨脂製成。As for the material of the insert 12 that can be used both as a porous material and with soft properties, the insert 12 can be made of foamed polyurethane.
當矽片W需要利用真空吸附作用從如圖1中示出的兩個靜壓板10和20之間移出時，首先需要靜壓板10或20通過形成於其中的真空吸附通孔產生的吸附作用使矽片W被吸附在靜壓板上，在取出裝置也完成對矽片W的吸附後，產生吸附作用的靜壓板的吸附作用才可以解除，而正是由於矽片W被靜壓板吸附而導致了上述的矽片W壓靠靜壓板。對此，可以使矽片W被根據本發明的實施例的靜壓板10吸附以避免受到污染物的損傷。另外，參見圖2，嵌入件12可以呈環狀，示例性的示出的兩個通孔11A位於嵌入件12內側或者說是由嵌入件12圍繞的，通孔11A還用於通過真空抽吸在嵌入件12圍繞的空間中產生負壓，使得圖2中未示出的矽片W在負壓的作用下壓靠靜壓板10。其中圖2中示出了板體11整體上是呈月牙狀的，這是為了在矽片雙面研磨裝置中將磨輪設置在圓形的缺口處，下文中將會對此進行詳細描述。When the silicon wafer W needs to be removed from between the two static pressure plates 10 and 20 as shown in FIG. 1 using vacuum adsorption, the static pressure plate 10 or 20 first needs to be adsorbed through the vacuum adsorption through holes formed therein. The silicon wafer W is adsorbed on the static pressure plate. After the removal device completes the adsorption of the silicon wafer W, the adsorption effect of the static pressure plate that produces the adsorption effect can be released. It is precisely because the silicon wafer W is statically pressed The plate adsorption causes the above-mentioned silicon chip W to press against the static pressure plate. In this regard, the silicon wafer W can be adsorbed by the static pressure plate 10 according to the embodiment of the present invention to avoid being damaged by contaminants. In addition, referring to FIG. 2 , the insert 12 may be annular. The two through holes 11A shown in the example are located inside the insert 12 or are surrounded by the insert 12 . The through holes 11A are also used for vacuum suction. Negative pressure is generated in the space surrounded by the insert 12, so that the silicon chip W (not shown in FIG. 2) is pressed against the static pressure plate 10 under the action of the negative pressure. Figure 2 shows that the plate body 11 is crescent-shaped as a whole. This is to arrange the grinding wheel at the circular notch in the silicon wafer double-sided grinding device, which will be described in detail below.
容易理解的是，在矽片W被研磨完成後，其自身也會附著有矽渣等污染物，而當矽片壓靠靜壓板10更具體的壓靠嵌入件12時，這樣的污染物也會對矽片W造成損傷。對此，在本發明的可選實施例中，參見圖3，靜壓板10還可以包括設置在板體11上的清潔噴頭13，其中，圖3中示例性的示出了兩個清潔噴頭13，清潔噴頭13用於朝向矽片W噴射清潔液以對矽片W進行清潔。這樣，在矽片W壓靠嵌入件12前，可以先對矽片W進行清潔，避免自身附著的污染物造成的損傷。It is easy to understand that after the silicon wafer W is ground, there will be contaminants such as silicon slag attached to it. When the silicon wafer W is pressed against the static pressure plate 10 , more specifically against the insert 12 , such contaminants will It will also cause damage to the silicon wafer W. In this regard, in an optional embodiment of the present invention, referring to FIG. 3 , the static pressure plate 10 may also include a cleaning nozzle 13 disposed on the plate body 11 , where two cleaning nozzles are exemplarily shown in FIG. 3 13. The cleaning nozzle 13 is used to spray cleaning liquid toward the silicon wafer W to clean the silicon wafer W. In this way, before the silicon chip W is pressed against the insert 12, the silicon chip W can be cleaned first to avoid damage caused by contaminants attached to itself.
可選的，仍然參見圖3，靜壓板10還可以包括設置在板體11上的距離感測器14，其中圖3中示例性的示出了三個距離感測器14，距離感測器14用於感測清潔噴頭13與矽片W之間的距離。這樣，在清潔噴頭13例如以散射的方式噴射清洗液的情況下，可以使矽片W相對於清潔噴頭13處於所需要的位置處，以便能夠以更有效的方式實現對矽片W的清潔。Optionally, still referring to FIG. 3 , the static pressure plate 10 may also include a distance sensor 14 disposed on the plate body 11 , where three distance sensors 14 are shown as an example in FIG. 3 . The sensor 14 is used to sense the distance between the cleaning nozzle 13 and the silicon chip W. In this way, when the cleaning nozzle 13 sprays the cleaning liquid in a scattering manner, the silicon wafer W can be positioned at a required position relative to the cleaning nozzle 13 , so that the silicon wafer W can be cleaned in a more effective manner.
參見圖4，本發明實施例還提供了一種矽片雙面研磨裝置1，矽片雙面研磨裝置1可以包括根據本發明各實施例的靜壓板10以及另一靜壓板20，這兩個靜壓板10、20可以設置在矽片W的兩側以在矽片W的不同側為矽片W提供流體靜壓，如在圖4中通過橫向箭頭示意性的示出的。Referring to Figure 4, an embodiment of the present invention also provides a silicon wafer double-sided grinding device 1. The silicon wafer double-sided grinding device 1 may include a static pressure plate 10 according to various embodiments of the present invention and another static pressure plate 20. Two static pressure plates 10 and 20 may be disposed on both sides of the silicon sheet W to provide hydrostatic pressure to the silicon sheet W on different sides of the silicon sheet W, as schematically shown in FIG. 4 by transverse arrows.
參見圖4，矽片雙面研磨裝置1還可以包括設置在兩個靜壓板10、20之間的環形載體30，環形載體30用於以圍繞矽片W的周緣的方式承載矽片W，環形載體30能夠繞自身的縱向軸線轉動以使所承載的矽片W轉動，由此在矽片雙面研磨裝置1的研磨部件的研磨面的有效研磨面積小於矽片W的主表面的面積的情況下仍然能夠實現矽片W的兩個主表面的整體的研磨。Referring to FIG. 4 , the double-sided polishing device 1 for silicon wafers may further include an annular carrier 30 disposed between the two static pressure plates 10 and 20. The annular carrier 30 is used to support the silicon wafer W in a manner surrounding the circumference of the silicon wafer W. The annular carrier 30 can rotate around its own longitudinal axis to rotate the supported silicon wafer W, thereby achieving overall polishing of the two main surfaces of the silicon wafer W when the effective polishing area of the polishing surface of the polishing component of the double-sided polishing device for silicon wafers 1 is smaller than the area of the main surface of the silicon wafer W.
參見圖4，矽片雙面研磨裝置1還可以包括成對的磨輪40，成對的磨輪40通過繞公共旋轉軸線旋轉對被環形載體30承載並且通過流體靜壓支撐的矽片W的兩個主表面進行研磨。結合圖2或圖3可以理解的是，磨輪40可以在不對矽片W進行研磨時縮回到板體11的圓形的缺口中。Referring to Fig. 4, the double-sided grinding device 1 for silicon wafers may further include a pair of grinding wheels 40, which grind the two main surfaces of the silicon wafer W supported by the annular carrier 30 and by the hydrostatic pressure of the fluid by rotating around a common rotation axis. It can be understood from Fig. 2 or Fig. 3 that the grinding wheels 40 can be retracted into the circular notch of the plate 11 when the silicon wafer W is not being ground.
需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict.
以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以申請專利範圍的保護範圍為準。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field and having ordinary knowledge can easily think of changes or substitutions within the technical scope disclosed in the present invention. All are covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the patent application.
10:靜壓板 11:板體 11A:通孔 12:嵌入件 13:清潔噴頭 14:距離感測器 20:靜壓板 30:環形載體 40:磨輪 F:流體 W:矽片 10:Static pressure plate 11:Plate body 11A:Through hole 12:Inserts 13: Clean the nozzle 14: Distance sensor 20:Static pressure plate 30: Ring carrier 40:Grinder wheel F: fluid W: silicon chip
圖1結合通過流體靜壓對矽片進行支撐的實現方式示出了根據本發明的實施例的靜壓板的側視示意圖； 圖2為根據本發明的實施例的靜壓板的正視示意圖； 圖3為根據本發明的另一實施例的靜壓板的正視示意圖； 圖4為根據本發明的實施例的矽片雙面研磨裝置的結構示意圖。 FIG1 shows a schematic side view of a static pressure plate according to an embodiment of the present invention in combination with an implementation method of supporting a silicon wafer by fluid static pressure; FIG2 is a schematic front view of a static pressure plate according to an embodiment of the present invention; FIG3 is a schematic front view of a static pressure plate according to another embodiment of the present invention; FIG4 is a schematic structural diagram of a double-sided grinding device for silicon wafers according to an embodiment of the present invention.
10:靜壓板 10:Static pressure plate
11:板體 11: Board
11A:通孔 11A: Through hole
12:嵌入件 12:Inserts
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| CN115319639A (en) * | 2022-09-22 | 2022-11-11 | 西安奕斯伟材料科技有限公司 | Polishing apparatus, polishing method, and silicon wafer |
| CN115972078A (en) * | 2022-12-27 | 2023-04-18 | 西安奕斯伟材料科技股份有限公司 | Device and method for double-sided grinding of silicon wafer |
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