CN112114257A - 电压电流转换电路及充放电控制装置 - Google Patents

电压电流转换电路及充放电控制装置 Download PDF

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CN112114257A
CN112114257A CN202010553312.0A CN202010553312A CN112114257A CN 112114257 A CN112114257 A CN 112114257A CN 202010553312 A CN202010553312 A CN 202010553312A CN 112114257 A CN112114257 A CN 112114257A
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resistor
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金泽雄亮
周藤曜一
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    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
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Abstract

本发明提供电压电流转换电路及充放电控制装置。电压电流转换电路的特征在于，具备：电压电流转换电阻，其与输入端子连接；和电流镜电路，其对电压电流转换电阻输出的电流进行镜像，电流镜电路由源极的电压被偏置得比衬底的电压高的耗尽型晶体管构成。

Description

电压电流转换电路及充放电控制装置
技术领域
本发明涉及电压电流转换电路及充放电控制装置。
背景技术
公开了在控制二次电池的充放电的充放电控制装置中与故障部位、故障模式无关地自行检测电路故障的电路及其故障诊断方法相关的发明(例如，参照专利文献1)。
图2是示出具备故障诊断电路的充放电控制装置的框图。
充放电控制装置100具备电压电流转换电路11、开关12、15、16、电阻电路13、基准电压电路14、38、比较器17、18、电流电压转换电路31、运算放大器32、35、MOS晶体管33、36、电阻34、37以及电流镜电路39。
比较器17根据电阻电路13输出的电压和基准电压电路14的电压来检测二次电池B1的过放电。比较器18同样地检测二次电池B1的过充电。并且，虽然未图示，还具备控制电路等，该控制电路利用这些比较器的信号来控制二次电池的充放电。
充放电控制装置100在对检测二次电池B1的电压的电路的故障进行诊断的情况下，通过电压电流转换电路11和电流电压转换电路31将二次电池B1的电压转换成以接地电压为基准的电压，并利用开关15、16使基于该电压的电流流过电阻电路13，由此来检测电路的故障。运算放大器32、MOS晶体管33、电阻34构成电压电流转换电路。同样地，运算放大器35、增强型的MOS晶体管36、电阻37构成电压电流转换电路。
在先技术文献
专利文献
专利文献1：日本特开2018-099020号公报
在充放电控制装置100中，电压电流转换电路11通常由使用如上所述的运算放大器和Nch(N沟道)增强型MOS晶体管的电路构成。
然而，在如上所述的电压电流转换电路中，当二次电池B1的电压降低时，Nch增强型MOS晶体管的栅极电压变低，无法将电压高精度地转换成电流，因此故障检测的精度降低。
发明内容
本发明提供一种电压电流转换电路，即使输入电压较低，也能够高精度地将输入电压转换成电流而输出。
此外，提供一种具备故障诊断功能的充放电控制装置，即使二次电池的电压较低、检测精度也不会降低。
为了解决上述课题，本发明的实施方式的电压电流转换电路的特征在于，具备：电压电流转换电阻，其与输入端子连接；和电流镜电路，其对电压电流转换电阻输出的电流进行镜像，电流镜电路由源极的电压被偏置得比衬底的电压高的耗尽型晶体管构成。
此外，本发明的实施方式的充放电控制装置的特征在于，具备故障诊断电路，该故障诊断电路具有：上述电压电流转换电路；和电流电压转换电路，其将电压电流转换电路的电流转换成以接地端子为基准的电压。
根据本发明，能够提供能够将较低的电压高精度地转换成电流的电压电流转换电路。
此外，根据本发明，能够提供一种具备故障诊断功能的充放电控制装置，即使是较低的电池电压，检测精度也不会降低。
附图说明
图1是示出本发明的实施方式的电压电流转换电路的电路图。
图2是示出具备故障诊断电路的充放电控制装置的框图。
图3是示出在图2的充放电控制装置中使用的本发明的实施方式的电压电流转换电路及电流电压转换电路的电路图。
标号说明
M1、M2、M3：耗尽型MOSFET；
R1、R2、R3、R4、R5、R6：电阻；
11、21：电压电流转换电路；
31：电流电压转换电路；
17、18、27、28：比较器；
32、35：运算放大器。
具体实施方式
以下，参照附图，对用于实施本发明的方式详细地进行说明。
图1是示出本发明的实施方式的电压电流转换电路11的电路图。
电压电流转换电路11具备电阻R1、R2、R4、作为负载电阻的电阻R3、Nch耗尽型的晶体管M1、M2、高电位侧的第一电压输入端子、低电位侧的第二电压输入端子以及电流输出端子。
电阻R1的一端与第一电压输入端子连接，另一端与晶体管M1的漏极和栅极连接。晶体管M1的衬底与第二电压输入端子连接，源极与电阻R2的一端连接。电阻R2的另一端与第二电压输入端子连接。
电阻R3的一端与电流输出端子连接，另一端与晶体管M2的漏极连接。晶体管M2的栅极与晶体管M1的栅极和漏极连接，源极与电阻R4的一端连接，衬底与第二电压输入端子连接。电阻R4的另一端与第二电压输入端子连接。
接下来，对电压电流转换电路11的动作进行说明。
电阻R1是电压电流转换用的电阻，将第一电压输入端子与第二电压输入端子之间的电压转换成电流。晶体管M1及电阻R2和晶体管M2及电阻R4构成电流镜电路，对流过电阻R1的电流进行镜像。
在由Nch耗尽型晶体管构成电流镜电路时，由于阈值为负，因此，即使输入端子间的电压降低，也进行镜像动作，但是当电流较少时，则无法进行镜像动作。图1的电流镜电路中，晶体管M1和晶体管M2各自具备作为偏置电阻的电阻R2和电阻R4。利用电阻R2、R4将晶体管M1、M2的源极的电位偏置得比衬底的电位高，因此，由于衬底偏置效应，晶体管的阈值变高。
这里，晶体管M1、M2的阈值设定得比0V高、且比增强型的晶体管低。通过那样设定阈值，图1的电流镜电路中，即使输入端子间的电压变低、并且即使在较小电流下，也能够进行镜像动作。
作为负载电阻的电阻R3被设置成，使得晶体管M1和晶体管M2的漏极电压大致相等。流过电阻R3的电流成为输出电流。
如以上进行了说明那样，电压电流转换电路11中，由Nch耗尽型的晶体管M1、M2和电阻R2、R4构成电流镜电路，其中，所述电阻R2、R4将该晶体管M1、M2的源极电压偏置得比衬底的电压高，因此，能够将阈值设定得比0V高、且比增强型的晶体管低。因此，即使输入端子间的电压变低，也能够将该电压高精度地转换成电流。
图2是示出具备故障诊断电路的充放电控制装置100的框图。
充放电控制装置100具备电压电流转换电路11、21、开关12、15、16、22、25、26、电阻电路13、23、基准电压电路14、24、38、比较器17、18、27、28、电流电压转换电路31、运算放大器32、35、MOS晶体管33、36、电阻34、37以及电流镜电路39。
比较器17根据电阻电路13输出的电压和基准电压电路14的电压来检测二次电池B1的过放电。比较器18同样地检测二次电池B1的过充电。比较器27根据电阻电路23输出的电压和基准电压电路24的电压来检测二次电池B2的过放电。比较器28同样地检测二次电池B2的过充电。并且，虽然未图示，还具备控制电路等，该控制电路利用这些比较器的信号来控制二次电池的充放电。
充放电控制装置100在对检测二次电池B1的电压的电路的故障进行诊断的情况下，如下那样进行动作。
电压电流转换电路11和电流电压转换电路31将二次电池B1的电压转换成以接地电压为基准的电压。运算放大器32、35、MOS晶体管33、36、电阻34、37、电流镜电路39生成基于该电压的故障诊断用的电流，并利用开关15或开关16而使该故障诊断用的电流流过电阻电路13。比较器17、18根据此时的电阻电路13的电压来检测电路的故障。
图3是示出能够在图2的充放电控制装置中使用的本发明的实施方式的电压电流转换电路及电流电压转换电路的电路图。电压电流转换电路11和电流电压转换电路31在如图3那样通过电流镜电路连接起来时能够构成电压的基准电位转换电路。
电压电流转换电路11具有与图1中相同的结构，因此省略说明。
电流电压转换电路31具备电阻R5、R6和Nch耗尽型的晶体管M3。电阻R5的一端与电流镜电路的输出端子连接，另一端与晶体管M3的漏极和栅极连接。晶体管M3的源极与电阻R6的一端连接，衬底与接地端子连接。电阻R6的另一端与接地端子连接。电阻R5是电流电压转换用的电阻，其一端是电压的输出端子。
电压电流转换电路11的第一电压输入端子与二次电池B1的正极端子连接，第二电压输入端子与二次电池B1的负极端子连接，电流输出端子与电流镜电路的输入端子连接。
在图3的电压的基准电位转换电路中，电压电流转换电路11将二次电池B1的电压转换成电流，电流电压转换电路31将该电流转换成以接地端子的电位为基准的电压。
因此，通过将电流电压转换电路31设为与将电压电流转换电路11的电压转换成电流的电路相同的结构，由此能够将电压电流转换电路11的电流准确地再转换成电压。
以上，对本发明的实施方式进行了说明，但是，本发明不限于上述实施方式，能够在不脱离本发明的主旨的范围内进行各种变更。例如，由于电阻R2、R4、R6具有将晶体管M1、M2、M3的源极电压偏置得比衬底电压高的功能，因此也可以由恒流源来构成。

Claims (5)

1.一种电压电流转换电路，该电压电流转换电路将输入端子的电压转换成电流而从输出端子输出，其特征在于，
所述电压电流转换电路具备：
电压电流转换电阻，其与所述输入端子连接；和
电流镜电路，其对所述电压电流转换电阻输出的电流进行镜像，
所述电流镜电路由源极的电压被偏置得比衬底的电压高的耗尽型晶体管构成。
2.根据权利要求1所述的电压电流转换电路，其特征在于，
所述耗尽型晶体管的衬底接地，源极经由电阻接地。
3.根据权利要求1所述的电压电流转换电路，其特征在于，
所述耗尽型晶体管的衬底接地，源极经由电流源接地。
4.一种充放电控制装置，其特征在于，
所述充放电控制装置具备故障诊断电路，
该故障诊断电路具有：
权利要求1至3中任意一项所述的电压电流转换电路；和
电流电压转换电路，其将所述电压电流转换电路的电流转换成以接地端子为基准的电压。
5.根据权利要求4所述的充放电控制装置，其特征在于，
所述电流电压转换电路具备：
电流电压转换电阻，其将所述电压电流转换电路的电流转换成电压；和
耗尽型晶体管，其设置在所述电流电压转换电阻与接地端子之间，源极的电压被偏置得比衬底的电压高。
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Publication number Priority date Publication date Assignee Title
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006033197A (ja) * 2004-07-13 2006-02-02 Ricoh Co Ltd Ｐｌｌ回路
WO2007007765A1 (ja) * 2005-07-12 2007-01-18 Rohm Co., Ltd. 電流電圧変換回路、それを用いた消費電力検出回路および電子機器
US20090179650A1 (en) * 2007-09-14 2009-07-16 Texas Instruments Incorporated Cell voltage abnormality detector and cell voltage monitoring device for a multi-cell series battery
KR20130108174A (ko) * 2012-03-22 2013-10-02 세이코 인스트루 가부시키가이샤 기준 전압 회로
CN107968453A (zh) * 2017-11-22 2018-04-27 张国东 一种内置电池供电式消防栓仪表及电源管理方法与***
US10054974B1 (en) * 2017-04-06 2018-08-21 Globalfoundries Inc. Current mirror devices using cascode with back-gate bias

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300091A (en) * 1980-07-11 1981-11-10 Rca Corporation Current regulating circuitry
JPH06105865B2 (ja) * 1987-01-05 1994-12-21 日本電気株式会社 半導体集積回路
KR100304813B1 (ko) 1992-12-28 2001-11-22 사와무라 시코 부성저항회로와이를사용한슈미트트리거회로
US6570444B2 (en) * 2000-01-26 2003-05-27 Pmc-Sierra, Inc. Low noise wideband digital predistortion amplifier
JP7014565B2 (ja) 2016-12-15 2022-02-01 エイブリック株式会社 二次電池監視装置及び故障診断方法
US10288694B2 (en) 2016-12-15 2019-05-14 Ablic Inc. Secondary battery monitoring device and method for diagnosing failure
US10819331B1 (en) * 2019-05-07 2020-10-27 Nxp B.V. Self-regulating body-biasing techniques for process, voltage, and temperature (PVT) fluctuation compensation in fully-depleted silicon-on-insulator (FDSOI) semiconductors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006033197A (ja) * 2004-07-13 2006-02-02 Ricoh Co Ltd Ｐｌｌ回路
WO2007007765A1 (ja) * 2005-07-12 2007-01-18 Rohm Co., Ltd. 電流電圧変換回路、それを用いた消費電力検出回路および電子機器
US20090179650A1 (en) * 2007-09-14 2009-07-16 Texas Instruments Incorporated Cell voltage abnormality detector and cell voltage monitoring device for a multi-cell series battery
KR20130108174A (ko) * 2012-03-22 2013-10-02 세이코 인스트루 가부시키가이샤 기준 전압 회로
US10054974B1 (en) * 2017-04-06 2018-08-21 Globalfoundries Inc. Current mirror devices using cascode with back-gate bias
CN107968453A (zh) * 2017-11-22 2018-04-27 张国东 一种内置电池供电式消防栓仪表及电源管理方法与***

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KUMAR A 等: "A power -performance adaptive low voltage analog circuit design using independently controlled double gate CMOS technology", 2004 IEEE INTERNATIONAL SYMPOSIUM ON CORCUITS AND VANCOUVER WALL CENTRE HOTEL *

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